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SUD50N02-06 Datasheet

Part Manufacturer Description PDF Type
SUD50N02-06 Vishay Intertechnology N-Channel 2.5-V (G-S), 175oC MOSFET Original
SUD50N02-06 Vishay Siliconix MOSFETs Original
SUD50N02-06-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 20V 30A TO252 Original
SUD50N02-06P Vishay Siliconix MOSFETs Original
SUD50N02-06P Vishay Siliconix P-Channel MOSFET Original
SUD50N02-06P-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 20V 50A TO252 Original
SUD50N02-06P SPICE Device Model Vishay N-Channel 20-V (D-S) 175 Degrees MOSFET Original
SUD50N02-06 SPICE Device Model Vishay N-Channel 2.5-V (G-S), 175°C MOSFET Original

SUD50N02-06

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: SUD50N02-06 New Product Vishay Siliconix N-Channel 20-V (D-S), 175_C MOSFET PRODUCT SUMMARY , D TO-252 G Drain Connected to Tab G D S Top View Order Number: SUD50N02-06 S , SUD50N02-06 New Product Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED , -Jul-00 SUD50N02-06 New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output , ­ Total Gate Charge (nC) www.vishay.com 2-3 SUD50N02-06 New Product Vishay Siliconix Vishay Siliconix
Original
S-01665--R
Abstract: SUD50N02-06 Vishay Siliconix N-Channel 20-V (D-S), 175_C MOSFET PRODUCT SUMMARY VDS (V) 20 , S G Top View Order Number: SUD50N02-06 S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 , 1 SUD50N02-06 Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter , -31724-Rev. C, 18-Aug-03 SUD50N02-06 Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output , ) www.vishay.com Document Number: 71136 S-31724-Rev. C, 18-Aug-03 3 SUD50N02-06 Vishay Siliconix Vishay Siliconix
Original
S-31724--R

SUD50N02-06

Abstract: SUD50N02-06 Vishay Siliconix N-Channel 20-V (D-S), 175_C MOSFET FEATURES PRODUCT SUMMARY , -252 Drain Connected to Tab G D G S Top View Order Number: SUD50N02-06 S N-Channel MOSFET , sec. Document Number: 71136 S-31724-Rev. C, 18-Aug-03 www.vishay.com 1 SUD50N02-06 , 2 Document Number: 71136 S-31724-Rev. C, 18-Aug-03 SUD50N02-06 Vishay Siliconix TYPICAL , ) www.vishay.com 3 SUD50N02-06 Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance
Vishay Siliconix
Original

vv6600

Abstract: SUD50N02-06 SPICE Device Model SUD50N02-06 N-Channel 2.5-V (G-S), 175ºC MOSFET Characteristics · N-channel Vertical DMOS · Macro-Model (Sub-circuit) · Level 3 MOS · Applicable for Both Linear and Switch Mode · Applicable Over a -55 to 125°C Temperature Range · Models Gate Charge, Transient, and Diode , : 71543 1 SPICE Device Model SUD50N02-06 Model Evaluation N-Channel Device (TJ=25°C Unless , temperature Siliconix 8/3/2000 Document: 71543 2 SPICE Device Model SUD50N02-06 Comparison of
Vishay Intertechnology
Original
vv6600 n-channel mosfet vgs 3v

SUD50N02-06

Abstract: SUD50N02-06 Vishay Siliconix N-Channel 20-V (D-S), 175_C MOSFET FEATURES PRODUCT SUMMARY , -252 Drain Connected to Tab G D G S Top View Order Number: SUD50N02-06 S N-Channel MOSFET , sec. Document Number: 71136 S-31724-Rev. C, 18-Aug-03 www.vishay.com 1 SUD50N02-06 , 2 Document Number: 71136 S-31724-Rev. C, 18-Aug-03 SUD50N02-06 Vishay Siliconix TYPICAL , ) www.vishay.com 3 SUD50N02-06 Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance
Vishay Siliconix
Original
Abstract: SUD50N02-06 New Product Vishay Siliconix N-Channel 2.5-V (G-S), 175_C MOSFET PRODUCT , TO-252 G Drain Connected to Tab G D S Top View Order Number: SUD50N02-06 S N-Channel MOSFET , /W 1 SUD50N02-06 Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE , 408-970-5600 2 Document Number: 71136 S-00142-Rev. A, 07-Feb-00 SUD50N02-06 New Product TYPICAL , Charge (nC) www.Vishay Siliconix.com S FaxBack 408-970-5600 3 SUD50N02-06 Vishay Siliconix New Vishay Intertechnology
Original
S-00142--R

SUD50N02-06

Abstract: SPICE Device Model SUD50N02-06 Vishay Siliconix N-Channel 2.5-V (G-S), 175°C MOSFET CHARACTERISTICS · N-Channel Vertical DMOS · Macro Model (Subcircuit Model) · Level 3 MOS · Apply for both Linear and Switching Application · Accurate over the -55 to 125°C Temperature Range · Model the Gate , -60542Rev. B, 10-Apr-06 www.vishay.com 1 SPICE Device Model SUD50N02-06 Vishay Siliconix , Device Model SUD50N02-06 Vishay Siliconix COMPARISON OF MODEL WITH MEASURED DATA (TJ=25°C UNLESS
Vishay Siliconix
Original
S-60542R

SUD50N02-06

Abstract: SPICE Device Model SUD50N02-06 Vishay Siliconix N-Channel 2.5-V (G-S), 175°C MOSFET ° CHARACTERISTICS · N-Channel Vertical DMOS · Macro Model (Model Subcircuit Schematic) · Level 3 MOS · Apply for both Linear and Switching Application · Accurate over the -55 to 125°C Temperature Range · Model , Number: 71543 03-Aug-00 www.vishay.com 1 SPICE Device Model SUD50N02-06 Vishay Siliconix , -Aug-00 SPICE Device Model SUD50N02-06 Vishay Siliconix COMPARISON OF MODEL WITH MEASURED DATA (TJ=25°C UNLESS
Vishay Siliconix
Original

SUD50N02-06

Abstract: SPICE Device Model SUD50N02-06 Vishay Siliconix N-Channel 2.5-V (G-S), 175°C MOSFET CHARACTERISTICS · N-Channel Vertical DMOS · Macro Model (Subcircuit Model) · Level 3 MOS · Apply for both Linear and Switching Application · Accurate over the -55 to 125°C Temperature Range · Model the Gate , -60542Rev. B, 10-Apr-06 www.vishay.com 1 SPICE Device Model SUD50N02-06 Vishay Siliconix , Device Model SUD50N02-06 Vishay Siliconix COMPARISON OF MODEL WITH MEASURED DATA (TJ=25°C UNLESS
Vishay Siliconix
Original

HiNT 1210

Abstract: CRCW08052001F SUD50N02-06 -VIN -3V to -6V Figure 1. High Current Negative LDO Controller Output Voltage vs , CRCW08052001F Vishay Dale(3) 2Kohm 1% 0805 1 Q1 SUD50N02-06 Vishay Siliconix(4) N-Channel
Micrel Semiconductor
Original
MIC5162BMM CRCW08053011F CRCW08054991F HiNT 1210 micrel 12066D106MAT2 12106D476MAT2 0201ZD104MAT2

MIC5162

Abstract: MIC5162BMM VREF VCC EN SUD50N02-06 120pF EN COMP 220pF FB LD VTT = 1/2 VDDQ 0A Source 3A , Circuit VDDQ = 1.8V or 2.5V MIC5162BMM VDDQ SUD50N02-06 HD VTT VCC VCC = 5.0V EN , , HSTL, LV-TTL, Rambus, LV-PECL and other systems. Vishay SUD50N02-06 MIC5162BMM VDDQ 100µF Oscon HD VCC 1µF Ceramic 120pF Vishay SUD50N02-06 330µF Oscon LD VREF COMP GND
Micrel Semiconductor
Original
MIC5162 MSOP-10 M9999-051004
Abstract: 1.35V to 6.0V MIC5162BMM SUD50N02-06 120pF VTT = 1/2 VDDQ COUT = 330µF Sink 3A SOURCE (2A/div) 0A , EN 220µF 10µF 470pF EN LD 120pF HD SUD50N02-06 VTT COUT = 3 × 560µF COMP VREF FB GND 10k , SUD50N02-06 MIC5162BMM 100µF Oscon 1µF Ceramic 120pF VDDQ VCC LD VREF COMP GND FB 220pF 3k HD Vishay SUD50N02-06 330µF Oscon Figure 2. September 2008 7 M9999-091108 MIC5162 VDDQ VREF 120pF GND Micrel Semiconductor
Original

MIC29502

Abstract: MIC29502 ADJ R1 20k R2 20k R4 10k VTT 1.25V C7 1µF U2 AD8517 R3 100 Q1 SUD50N02-06 , C8 VJ0805121KxxAT CR1 LL4148 Q1 SUD50N02-06 N-channel MOSFET, 20V, 6m 1 R1 , SUD50N02-06 R3 100 R6 470 VSS VSS FIgure 2 R5 4.7k U1 MIC29502BU VDDQ 2.5V IN , Q1 SUD50N02-06 R3 100 R6 470 VSS VSS Figure 3 Application Note 35 4
Micrel Semiconductor
Original
MIC2182 MIC29502 MIC29502 ADJ SI4884 12 VOLT 2 AMP regulator Application Note 35 SD103BW5

SUB75N03-07

Abstract: Amp. mosfet 1000 watt 1.35V to 6.0V Sink 3A VDDQ VREF VCC EN SUD50N02-06 120pF EN COMP 220pF FB LD , . Test Circuit VDDQ = 1.8V or 2.5V MIC5162BMM VDDQ SUD50N02-06 HD VTT VCC VCC = 5.0V , terminations for SCSI, GTL, HSTL, LV-TTL, Rambus, LV-PECL and other systems. Vishay SUD50N02-06 MIC5162BMM VDDQ 100µF Oscon HD VCC 1µF Ceramic 120pF Vishay SUD50N02-06 330µF Oscon
Micrel Semiconductor
Original
SUB75N03-07 Amp. mosfet 1000 watt MIC5162YMM M9999-092004

SUB75N03

Abstract: 1.35V to 6.0V MIC5162BMM SUD50N02-06 120pF VTT = 1/2 VDDQ COUT = 330µF Sink 3A SOURCE (2A/div) 0A , EN 220µF 10µF 470pF EN LD 120pF HD SUD50N02-06 VTT COUT = 3 × 560µF COMP VREF FB GND 10k , SUD50N02-06 MIC5162BMM 100µF Oscon 1µF Ceramic 120pF VDDQ VCC LD VREF COMP GND FB 220pF 3k HD Vishay SUD50N02-06 330µF Oscon Figure 2. September 2008 7 M9999-091108 MIC5162 VDDQ VREF 120pF GND
Micrel Semiconductor
Original
SUB75N03

MIC5162

Abstract: MIC5162BMM HD EN SUD50N02-06 120pF EN COMP 220pF FB LD VTT = 1/2 VDDQ 0A Source 3A , SUD50N02-06 HD VTT VCC VCC = 5.0V EN 220µF 10µF EN COMP VREF 470pF COUT = 3 × 560µF , systems. Vishay SUD50N02-06 MIC5162BMM VDDQ 100µF Oscon HD VCC 1µF Ceramic 120pF Vishay SUD50N02-06 330µF Oscon LD VREF COMP GND FB 220pF 3k Figure 2. October 2003
Micrel Semiconductor
Original

2N2007

Abstract: ddr3 termination 100µF 6.3V EN HSD EN VREF 1µF 10V 120pF LSD COMP SUD50N02-06P VTT = 0.6V SUD50N02-06P 220pF 100µF 6.3V GND FB 100µF 6.3V GND GND MIC5163 as a DDR3 Memory , from EN = VCC to HSD = 90% of VCC Test Circuit MIC5163 VDDQ = 0.75-2.5V VDDQ SUD50N02-06P , GND SUD50N02-06P VDDQ VCC = 5V VTT = 0.6V HSD LSD COMP 220pF GND FB 100µF , Q22 SUD50N02-06 1 8 3 1 TP3 C10 47µF 6.3V 3 1 C9 47µF 6.3V TP23 TP24
Micrel Semiconductor
Original
2N2007 ddr3 termination 2N2007E 18126D107MAT ddr3 SSN SOT-23 M9999-042209-A

AN819

Abstract: SI4686 Si7336ADP 1.014 Si7880ADP 1.022 SUD50N02-06 1.080 SUD50N25-06P 1.083 SUM110N04
Vishay Siliconix
Original
AN819 SI4686 Si4800BDY PowerPAK 1212 die PowerPAK 1212 PowerPAK SO-8 4800BDY

2N2007E

Abstract: 2N2007 GND HD SUD50N02-06P 120pF VTT = 1/2 VDDQ COUT = 330µF VCC = 5.0V 3k Typical SSTL , LD 120pF HD SUD50N02-06P VTT COUT = 3 x 560µF VCC = 5.0V COMP VREF FB GND 10k June , reference voltage's ability to track VDDQ during high speed load transients. Vishay SUD50N02-06 , 1µF Ceramic 120pF VDDQ VCC HD Vishay SUD50N02-06 330µF Oscon Figure 1. SSTL , MIC5162BMM SUD50N02-06P VTT = 0.6V @ ±7A VCC = 5V 150µF/10V Oscon EN 1µF 10V 120pF VDDQ VCC EN VREF
Micrel Semiconductor
Original
597D108X06 CAP 10nF 50V 0603 M9999-061509
Abstract: 100µF 6.3V EN EN VREF 1µF 10V SUD50N02-06P LSD COMP SUD50N02-06P 220pF 120pF , VDDQ SUD50N02-06P VTT = 0.5*VDDQ HD VCC VCC = 5V EN 220µF EN LD COMP VREF , SUD50N02-06P VDDQ VCC = 5V VCC 100µF 6.3V 100µF 6.3V EN LSD COMP 220pF 120pF , 6.3V TP4 1 4 21 20 1 1 2 2 1 3 9 Q22 SUD50N02-06 1 8 EN + C26 , , 6.3V C21 100µF 6.3V C30 100µF 6.3V C31 2700µF 2.5V VDDQ 1 SUD50N02-06 2 3 Micrel Semiconductor
Original
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