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STW9NB80 - Datasheet Archive
N-CHANNEL 800V - 0.85 - 9.3A TO-247 PowerMESHTM MOSFET TYPE s s s s RDS(on) ID STW9NB80 s VDSS 800V < 1 9A TYPICAL RDS(on) =
STW9NB80 STW9NB80 N-CHANNEL 800V - 0.85 - 9.3A TO-247 PowerMESHTM MOSFET TYPE s s s s RDS(on) ID STW9NB80 STW9NB80 s VDSS 800V < 1 9A TYPICAL RDS(on) = 0.85 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 3 2 1 DESCRIPTION Using the latest high voltage MESH OVERLAYTM process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprieraty edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics. TO-247 INTERNAL SCHEMATIC DIAGRAM APPLICATIONS s SWITCH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID Parameter Value Unit Drain-source Voltage (VGS = 0) 800 V Drain-gate Voltage (RGS = 20 k) 800 V Gate- source Voltage ±30 V Drain Current (continuos) at TC = 25°C 9.3 A PTOT dv/dt(1) Tstg Tj Drain Current (continuos) at TC = 100°C 5.8 A Drain Current (pulsed) 37 A Total Dissipation at TC = 25°C 190 W Derating Factor IDM (l ) 1.52 W/°C 4 V/ns 65 to 150 °C 150 °C Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature (·)Pulse width limited by safe operating area June 2002 (1)ISD 9.3A, di/dt 100A/µs, VDD V(BR)DSS, Tj TJMAX. 1/8 STW9NB80 STW9NB80 THERMAL DATA 0.66 °C/W Thermal Resistance Junction-ambient Max 30 °C/W Maximum Lead Temperature For Soldering Purpose 300 °C Rthj-case Thermal Resistance Junction-case Max Rthj-amb Tl AVALANCHE CHARACTERISTICS Symbol Parameter Max Value Unit IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) 9.3 A EAS Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) 600 mJ ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol Parameter Test Conditions Drain-source Breakdown Voltage ID = 250 µA, VGS = 0 IDSS Zero Gate Voltage Drain Current (V GS = 0) Gate-body Leakage Current (VDS = 0) Typ. VDS = Max Rating IGSS Min. VGS = ±30V V(BR)DSS Max. 800 Unit V 1 VDS = Max Rating, TC = 125 °C µA 50 µA ±100 nA Max. Unit ON (1) Symbol Parameter Test Conditions VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA R DS(on) Static Drain-source On Resistance Min. VGS = 10V, ID = 4.6A 3 Typ. 4 5 V 0.85 1 Typ. Max. Unit DYNAMIC Symbol Parameter Test Conditions Min. 9 S 2100 pF g fs VDS > ID(on) x RDS(on)max, ID = 4.6 A C iss Input Capacitance VDS = 25V, f = 1 MHz, VGS = 0 Coss Output Capacitance 250 pF Crss 2/8 Forward Transconductance Reverse Transfer Capacitance 27 pF STW9NB80 STW9NB80 ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON Symbol td(on) tr Parameter Turn-on Delay Time Rise Time Qg Total Gate Charge Qgs Gate-Source Charge Q gd Test Conditions Min. VDD = 400V, I D = 4.5 A RG = 4.7, VGS = 10V (see test circuit, Figure 3) Typ. Max. Unit 28 20 Gate-Drain Charge VDD = 640V, I D = 9 A, VGS = 10V, R G = 4.7 ns ns 53 74 nC 13 nC 25 nC SWITCHING OFF Symbol tr(Voff) Parameter Off-voltage Rise Time tf Fall Time tc Test Conditions Min. VDD = 640V, I D = 9 A, R G = 4.7, VGS = 10V (see test circuit, Figure 5) Typ. Max. Unit 22 22 ns 35 Cross-over Time ns ns SOURCE DRAIN DIODE Symbol ISD Parameter Test Conditions Min. Typ. Forward On Voltage ISD = 9 A, VGS = 0 trr Reverse Recovery Time Qrr Reverse Recovery Charge ISD = 9.3 A, di/dt = 100 A/µs, VDD = 100V, T j = 150°C (see test circuit, Figure 5) IRRM Reverse Recovery Current A 1.6 Source-drain Current (pulsed) VSD (1) A 36 ISDM (2) Unit 9 Source-drain Current Max. V 900 ns 9.2 µC 20 A Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. Safe Operating Area Thermal Impedance 3/8 STW9NB80 STW9NB80 Output Characteristics Transconductance Gate Charge vs Gate-source Voltage 4/8 Transfer Characteristics Static Drain-source On Resistance Capacitance Variations STW9NB80 STW9NB80 Normalized Gate Thereshold Voltage vs Temp. Normalized On Resistance vs Temperature Source-drain Diode Forward Characteristics 5/8 STW9NB80 STW9NB80 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/8 STW9NB80 STW9NB80 TO-247 MECHANICAL DATA DIM. mm. MIN. TYP inch MAX. MIN. A 4.85 5.15 0.19 TYP. 0.20 D 2.20 2.60 0.08 0.10 E 0.40 0.80 0.015 0.03 F 1 1.40 0.04 0.05 F1 3 0.11 F2 2 MAX. 0.07 F3 2 F4 3 G 2.40 0.07 3.40 0.11 10.90 0.09 0.13 0.43 H 15.45 15.75 0.60 0.62 L 19.85 20.15 0.78 0.79 L1 3.70 4.30 0.14 L2 L3 18.50 14.20 0.17 0.72 14.80 0.56 0.58 L4 34.60 1.36 L5 5.50 0.21 M 2 3 0.07 0.11 V 5º 5º V2 60º 60º Dia 3.55 3.65 0.14 0.143 7/8 STW9NB80 STW9NB80 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. © The ST logo is a registered trademark of STMicroelectronics © 2002 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. © http://www.st.com 8/8