STTA812D/DI/G STTA812DI STTA812D 2500VRMS STTA812G -50A/ STTA812G-TR

® TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS IF(AV) 8A VRRM 1200V trr (typ) 50ns VF (max) 2.0V K

STTA812D/DI/G STTA812D/DI/G ® TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS IF(AV) 8A VRRM 1200V trr (typ) 50ns VF (max) 2.0V K A A K K TO-220AC Ins. STTA812DI STTA812DI TO-220AC STTA812D STTA812D FEATURES AND BENEFITS s s s s s ULTRA-FAST, SOFT RECOVERY. VERY LOW OVERALL POWER LOSSES IN BOTH THE DIODE AND THE COMPANION TRANSISTOR. HIGH FREQUENCY AND/OR HIGH PULSED CURRENT OPERATION. HIGH REVERSE VOLTAGE CAPABILITY INSULATED PACKAGE : TO-220AC Ins. Electrical insulation : 2500VRMS 2500VRMS Capacitance : 7pF. K A NC D2PAK STTA812G STTA812G DESCRIPTION TURBOSWITCH 1200V drastically cuts losses in all high voltage operations which require extremely fast, soft and noise-free power diodes. Due to their optimized switching performances they also highly decrease power losses in any associated switching IGBT or MOSFET in all "freewheel mode" operations. They are particularly suitable in motor control circuitries, or in the primary of SMPS as snubber, clamping or demagnetizing diodes. They are also suitable for secondary of SMPS as high voltage rectifier diodes. ABSOLUTE RATINGS (limiting values) Symbol Parameter VRRM VRSM Non repetitive peak reverse voltage RMS forward current Unit 1200 Repetitive peak reverse voltage IF(RMS) Value V 1200 V TO-220AC/ D2PAK 30 A TO-220AC Ins. 20 A IFRM Repetitive peak forward current tp = 5 µs F = 5kHz square 110 A IFSM Surge non repetitive forward current tp = 10ms sinusoidal 70 A Tstg Storage temperature range - 65 to + 150 °C 150 °C Tj Maximum operating junction temperature TURBOSWITCH is a trademark of STMicroelectronics. May 2002 - Ed: 5C 1/10 STTA812D/DI/G STTA812D/DI/G THERMAL AND POWER DATA Symbol Rth(j-c) Parameter Conditions Value Unit 2.3 3.3 2 °C/W Pmax TO-220AC/D PAK TO-220AC Ins. Conduction power dissipation IF(AV) = 8A =0.5 P1 Junction to case thermal resistance TO-220AC/D PAK TO-220AC Ins. Tc= 105°C Tc= 85°C 19.5 W Total power dissipation Pmax = P1 + P3 (P3 = 10% P1) TO-220AC/D2PAK TO-220AC Ins. Tc= 100°C Tc= 79°C 21.5 W 2 STATIC ELECTRICAL CHARACTERISTICS Symbol VF IR * * Vto rd Test pulses : Parameter Test conditions Threshold voltage Max Unit Tj = 25°C Tj = 125°C 1.35 2.2 2.0 V V VR =0.8 x VRRM Tj = 25°C Tj = 125°C 0.6 100 4 µA mA Tj = 125°C 1.57 V 54 Reverse leakage current Typ Ip < 3.IAV Forward voltage drop m Max Unit IF =8A Min Dynamic parameter * tp = 380 µs, < 2% * tp = 5 ms , < 2% To evaluate the maximum conduction losses use the following equation : P = Vto x IF(AV) + rd x IF2(RMS) DYNAMIC ELECTRICAL CHARACTERISTICS TURN-OFF SWITCHING Symbol Parameter trr Reverse recovery time IRM S factor Maximum reverse recovery current Softness factor Test conditions Min ns Tj = 25°C IF = 0.5 A IR = 1A Irr = 0.25A IF = 1 A dIF/dt =-50A/ -50A/µs VR =30V Tj = 125°C VR = 600V dIF/dt = -64 A/µs dIF/dt = -500 A/µs Tj = 125°C VR = 600V dIF/dt = -500 A/µs Typ 50 100 IF = 8A A 12 25 IF = 8A 1.2 TURN-ON SWITCHING Symbol tfr VFp 2/10 Parameter Forward recovery time Peak forward voltage Test conditions Min Typ Max Tj = 25°C IF =8 A, dIF/dt = 64 A/µs measured at 1.1 × VFmax 900 Tj = 25°C IF =8A, dIF/dt = 64 A/µs IF =40A, dIF/dt = 500 A/µs 35 Unit ns V 45 STTA812D/DI/G STTA812D/DI/G Fig. 1: Conduction losses versus average current. Fig. 2: Forward voltage drop versus forward current (maximum values). P1(W) 20 18 16 14 12 10 8 6 4 2 0 IFM(A) = 0.2 = 0.1 100.0 = 0.5 Tj=125°C =1 10.0 1.0 VFM(V) IF(av) (A) 0 2 4 6 8 10 Fig. 3: Relative variation of thermal impedance junction to case versus pulse duration. 0.1 0.0 1.0 2.0 3.0 4.0 5.0 Fig. 4: Peak reverse recovery current versus dI F/dt (90% confidence). Zth(j-c)/Rth(j-c) IRM(A) 1.0 50 0.8 40 0.6 30 VR=600V Tj=125°C IF=2*IF(av) IF=IF(av) = 0.5 20 0.4 IF=0.5*IF(av) = 0.2 0.2 10 = 0.1 tp(s) Single pulse 0.0 1E-4 1E-3 dIF/dt(A/µs) 1E-2 1E-1 1E+0 Fig. 5: Reverse recovery time versus dIF/dt (90% confidence). 0 0 200 300 400 500 Fig. 6: Softness factor (tb/ta) versus dIF/dt (typical values). trr(ns) 550 500 450 400 350 300 250 200 150 100 50 0 100 S factor 1.40 VR=600V Tj=125°C VR=600V IF