STTA112U -50A/ - Datasheet Archive

 

® TURBOSWITCH TM "A". ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS IF(AV) 1A VRRM 1200V trr (typ)

 

STTA112U STTA112U ® TURBOSWITCH TM "A". ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS IF(AV) 1A VRRM 1200V trr (typ) 65ns VF (max) 1.5V A K FEATURES AND BENEFITS SPECIFIC TO "FREEWHEEL MODE "OPERATIONS : FREEWHEEL OR BOOSTERDIODE ULTRA-FAST AND SOFT RECOVERY VERY LOW OVERALL POWER LOSSES IN BOTH THE DIODE AND THE COMPANION TRANSISTOR HIGH FREQUENCY OPERATIONS SURFACE MOUNT DEVICE SOD6 (Plastic) DESCRIPTION The TURBOSWITCH is a very high performance series of ultra-fast high voltage power diodes from 600V to 1200V. TURBOSWITCH 1200V drastically cuts losses in all high voltage operations which require extremely fast, soft and noise-free power diodes. Due to their optimized switching performances they also highly decrease power losses in any associated switching IGBT or MOSFET in all "Freewheel Mode" operations. They are particularly suitable in Motor Control circuitries, or in primary of SMPS as snubber, clamping or demagnetizing diodes, and also in at the secondary of SMPS as high voltage rectifier diodes. Packaged in SOD6 surface mount envelope, these 1200V devices are particularly intended for use on 3 phase 400V industrial mains. ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VRRM Repetitive Peak Reverse Voltage 1200 V VRSM Non Repetitive Peak Reverse Voltage 1200 V IF(RMS) RMS Forward Current 3.5 A Repetitive Peak Forward Current (tp = 5 µs, f = 5kHz) 22 A Max. Operating Junction Temperature 125 °C - 65 to + 150 °C IFRM Tj Tstg Storage Temperature range TM : TURBOSWITCH is a trademark of SGS-THOMSON Microelectronics July 1995 - Ed : 1C 1/8 STTA112U STTA112U THERMAL AND POWER DATA Symbol Rth(j-I) Parameter Conditions 23 °C/W Conduction Power Dissipation (see fig. 6) IF(AV) = 0.8A = 0.5 Tlead= 93°C 1.4 W Total Power Dissipation Pmax = P1 + P3 (P3 = 10% P1) Pmax Tlead= 90°C 1.5 W STATIC ELECTRICAL CHARACTERISTICS Symbol * IR Unit Junction to Lead Thermal Resistance P1 VF Value * (see Fig. 6) Parameter Test Conditions Forward Voltage Drop Reverse Leakage Current IF = 1A VR = 0.8 x VRRM Min Typ Max Unit Tj = 25°C Tj = 125°C 1.66 1.5 V 1.1 Tj = 25°C Tj = 125°C 10 300 µA 90 Typ Max Unit Test pulses widths : * tp = 380 µs, duty cycle < 2% * tp = 5 ms , duty cycle < 2% DYNAMIC ELECTRICAL CHARACTERISTICS TURN-OFF SWITCHING (see Fig. 7) Symbol Parameter Test Conditions trr Reverse Recovery Time Tj = 25°C Irr = 0.25A IF = 0.5 A IR = 1A IF = 1 A dIF/dt =-50A/ -50A/µs VR = 30V IRM S factor Maximum Recovery Current Tj = 125°C VR = 600V dIF/dt = -8 A/µs dIF/dt = -50 A/µs Softness factor Tj = 125°C VR = 600V dIF/dt = -50 A/µs Min ns 65 115 A IF = 1A 1.8 5 / IF =1A 0.7 TURN-ON SWITCHING (see Fig. 8) Symbol Parameter tfr Forward Recovery Time VFp Peak Forward Voltage Test Conditions Tj = 25°C IF = 1 A, dIF/dt = 8 A/µs measured at, 1.1 × VF max 2/8 ® Min Typ Max Unit 900 ns 35 V STTA112U STTA112U APPLICATION DATA The 1200V TURBOSWITCHTM series has been designed to provide the lowest overall power losses in all frequency or high pulsed current operations. In such application (fig. 1 to 5), the way of calculating the power losses is given below : TOTAL LOSSES due to the diode P = P1+ P2+ P3+ P4+ P5 Watts CONDUCTION LOSSES in the diode REVERSE LOSSES in the diode SWITCHING LOSSES in the diode P1 Watts (Fig. 6) P2 Watts (Fig. 6) OFF : P3 Watts ON : P4 Watts (Fig. 7 & 8) SWITCHING LOSSES in the diode due to the diode P5 Watts (Fig. 7) Fig. 1 : "FREEWHEEL MODE". SWITCHING TRANSISTOR DIODE: TURBOSWITCH "A" IL VR t T F = 1/T = t/T LOAD 3/8 ® STTA112U STTA112U APPLICATION DATA (Cont'd) Fig. 2 : SNUBBER DIODE. Fig. 3 : CLAMPING DIODE. PWM t PWM t T F = 1/T = t/T T F = 1/T Fig. 4 : DEMAGNETIZING DIODE. = t/T Fig. 5 : RECTIFIER DIODE. Fig. 6 : STATIC CHARACTERISTICS. Conduction losses : I P1 = Vt0 x IF(AV) + Rd x IF2(RMS) IF with Rd Vt0 = 1.15 V Rd = 0.350 Ohm (Max values at 125°C) VR V IR V tO VF Reverse losses : P2 = VR x IR x (1 - ) 4/8 ® STTA112U STTA112U APPLICATION DATA (Cont'd) Fig. 7 : TURN-OFF CHARACTERISTICS. Turn-on losses : (in the transistor, due to the diode) V IL VR × IRM 2 × (3+2 × S) F 6 x dIF / dt VR × IRM × IL ×(S + 2) × F + 2 × dIF / dt P5 = TRANSISTOR I t Turn-off losses : I dI F /dt DIODE P3 = ta tb V VR × IRM 2 × × S × F 6 x dIF / dt t dI R /dt I RM VR trr = ta + tb I dIF /dt = VR /L S = tb / ta Turn-off losses : with non negligible serial inductance RECTIFIER OPERATION P3' = ta tb V t IRM dI R /dt VR × IRM 2 × S × F L × IRM 2 × F + 6 x dIF / dt 2 P3, P3' and P5 are suitable for power MOSFET and IGBT VR trr = ta + tb S = tb/ta Fig. 8 : TURN-ON CHARACTERISTICS. IF I Fmax dI F /dt 0 Turn-on losses : P4 = 0.4 (VFP - VF) x IFmax x tfr x F t VF V Fp VF 1.1V F 0 tfr t Ratings and characteristics curves are ON GOING. 5/8 ® STTA112U STTA112U Fig. 9 : Conductionlosses versus average current. Fig. 10 : Switching OFF losses versus dIF/dt. P1(W) P3(W) 1.50 1.25 = 0.1 = 0.2 0.30 = 0.5 1.00 VR =600V Tj=125°C 0.20 =1 0.75 I F=2*IF (av) 0.10 0.50 0.25 dIF/dt(A/us) IF(av) (A) 0.00 0.0 0.1 0.2 0.3 0.4 0.5 0.00 0.6 0.7 0.8 0.9 1.0 Fig. 11 : Switching ON losses versus dIF/dt. 0 20 40 60 80 180 200 Fig. 12 : Switching losses in transistor due to the diode. P5(W) P4(W) 3 0.06 Tj=125 °C F=5KHz VR =600V VR=600V Tj=125°C 0.05 100 120 140 160 IF =2*IF(av) 0.04 IL=2A 2 IL=1A 0.03 IL=0.5A 0.02 1 0.01 0.00 dIF/dt(A/us) 0 10 20 30 40 50 60 dIF/dt(A/us) 70 80 90 100 Fig. 13 : Forward voltage drop versus forward current (Maximum values). VFM (V) 8.0 7.0 6.0 5.0 4.0 3.0 Tj=125°C 2.0 1.0 0.0 0.1 I FM(A) 1.0 10.0 50.0 6/8 ® 0 0 20 40 60 80 100 120 140 160 180 200 Fig. 14 : Relative variation of thermal transient impedance junction to lead versus pulse duration. STTA112U STTA112U Fig. 15 : Peak reverse recovery current versus dIF/dt (90% confidence). Fig. 16 : Reverse recovery time versus dIF/dt (90% confidence). IRM(A) trr(ns) 15.0 300 12.5 VR =600V Tj=125°C I F=2*IF(av) V R=600V Tj=125°C IF=2*IF(av) 250 10.0 200 7.5 150 5.0 100 2.5 50 d IF/dt(A/us) 0.0 0 20 40 60 80 100 120 140 160 180 200 Fig. 17 : Softness factor (tb/ta) versus dIF/dt (Typical values). S factor 0 dIF/dt(A/us) 0 20 40 60 80 100 120 140 160 180 200 Fig. 18 : Relative variation of dynamic parameters versus junction temperature (Reference Tj=125°C). 1.1 1.00 S factor V R=600V Tj=125°C IF