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STS3DPFS45 - Datasheet Archive
P-CHANNEL 45V - 0.080 - 3A SO-8 STripFETTM MOSFET PLUS SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS VDSS ID < 0.11 3A
STS3DPFS45 STS3DPFS45 P-CHANNEL 45V - 0.080 - 3A SO-8 STripFETTM MOSFET PLUS SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS VDSS ID < 0.11 3A IF(AV) VRRM V F(MAX) 3A SCHOTTKY RDS(on) 45 V MOSFET 45 V 0.51 V DESCRIPTION This product associates the latest low voltage StripFEToe in p-channel version to a low drop Schottky diode. Such configuration is extremely versatile in implementing, a large variety of DC-DC converters for printers, portable equipment, and cellular phones. SO-8 INTERNAL SCHEMATIC DIAGRAM MOSFET ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit Dain-source Voltage (VGS = 0) 45 V VDGR Drain-gate Voltage (RGS = 20 k) 45 V VGS Gate- source Voltage VDS ± 16 V ID Drain Current (continuos) at TC = 25°C 3 A ID Drain Current (continuos) at TC = 100°C 1.9 A Drain Current (pulsed) 12 A Total Dissipation at TC = 25°C 2 W Value Unit IDM(·) Ptot SCHOTTKY ABSOLUTE MAXIMUM RATINGS Symbol Parameter VRRM Repetitive Peak Reverse Voltage 45 V IF(RMS) RMS Forward Curren 20 A 3 A oC IF(AV) Average Forward Current TL=125 =0.5 IFSM Surge Non Repetitive Forward Current tp= 10 ms Sinusoidal 75 A IRRM Repetitive Peak Reverse Current tp=2 µs F=1 kHz 1 A IRSM Non Repetitive Peak Reverse Current tp=100 µs 1 A dv/dt Critical Rate Of Rise Of Reverse Voltage 10000 V/µs (·) Pulse width limited by safe operating area Note: For the P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed February 2002 . 1/8 STS3DPFS45 STS3DPFS45 TERMAL DATA Rthj-amb Rthj-amb Tstg Tj Thermal Resistance Junction-ambient MOSFET Thermal Resistance Junction-ambient SCHOTTKY Storage Temperature Range Maximum Lead Temperature For Soldering Purpose oC/W oC/W 62.5 100 -65 to 150 150 MAX oC oC (*) Mounted on Fr-4 board (Steady State) ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified) OFF Symbol Parameter Test Conditions Drain-source Breakdown Voltage ID = 250 µA, VGS = 0 IDSS Zero Gate Voltage Drain Current (V GS = 0) Gate-body Leakage Current (VDS = 0) Typ. VDS = Max Rating VDS = Max Rating TC = 125°C IGSS Min. VGS = ± 16 V V(BR)DSS Max. 45 Unit V 1 10 µA µA ±100 nA ON (1) Symbol Parameter Test Conditions VGS(th) Gate Threshold Voltage VDS = VGS R DS(on) Static Drain-source On Resistance VGS = 10 V ID(on) On State Drain Current ID = 250 µA VGS = 10 V Min. Typ. Max. Unit 2 3 4 V 0.080 0.11 I D = 1.5 A 3 A SCHOTTCKY STATIC ELECTRICAL CHARACTERISTICS Symbol Parameter Test Conditions Min. Typ. Max. Unit IR(*) Reversed Leakage Current TJ= 25 oC TJ= 125 oC VR= 45 V VR= 45 V 0.03 0.2 100 mA mA VF(*) Forward Voltage drop TJ= 25 oC TJ= 125 oC IF= 3 A IF= 3 A 0.42 0.51 0.46 mA mA Typ. Max. Unit DYNAMIC Symbol Parameter Test Conditions Min. gfs (*) VDS>ID(on)xRDS(on)max ID=1.5A 4 S C iss Coss Crss 2/8 Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25V, f = 1 MHz, VGS = 0 1190 200 56 pF pF pF STS3DPFS45 STS3DPFS45 ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol Parameter Test Conditions td(on) tr Turn-on Delay Time Rise Time VDD = 20 V ID = 1.5 A V GS = 10 V R G = 4.7 (Resistive Load, Figure 3) Qg Qgs Q gd Total Gate Charge Gate-Source Charge Gate-Drain Charge Min. VDD= 20V ID= 3A VGS=10V Typ. Max. 20 25 Unit ns ns 24.5 4 5.5 33 nC nC nC Typ. Max. Unit SWITCHING OFF Symbol Parameter Test Conditions Min. td(off) tf Turn-off Delay Time Fall Time VDD = 20 V ID = 1.5 A VGS = 10 V RG = 4.7, (Resistive Load, Figure 3) 100 22 ns ns td(off) tf tc Turn-off Delay Time Fall Time Cross-over Time Vclamp = 32 V RG = 4.7, 95 11 35 ns ns ns ID = 3 A VGS = 10 V SOURCE DRAIN DIODE Symbol Parameter ISD ISDM (·) Source-drain Current Source-drain Current (pulsed) VSD (*) Forward On Voltage ISD = 3 A Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 3 A di/dt = 100A/µs T j = 150°C VDD = 15 V (see test circuit, Figure 5) trr Qrr IRRM Test Conditions Min. Typ. A A 2 40 85 3.8 Unit 3 12 VGS = 0 Max. V ns nC A (*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. (·)Pulse width limited by safe operating area. Safe Operating Area Thermal Impedance 3/8 STS3DPFS45 STS3DPFS45 Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations 4/8 STS3DPFS45 STS3DPFS45 Normalized Gate Threshold Voltage vs Temperature Normalized on Resistance vs Temperature Source-drain Diode Forward Characteristics . . . 5/8 STS3DPFS45 STS3DPFS45 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/8 STS3DPFS45 STS3DPFS45 SO-8 MECHANICAL DATA mm DIM. MIN. TYP. A a1 MAX. MIN. TYP. 1.75 0.1 0.003 0.009 1.65 0.65 MAX. 0.068 0.25 a2 a3 inch 0.064 0.85 0.025 0.033 b 0.35 0.48 0.013 0.018 b1 0.19 0.25 0.007 0.010 C 0.25 0.5 0.010 0.019 c1 45 (typ.) D 4.8 5.0 0.188 0.196 E 5.8 6.2 0.228 0.244 e 1.27 0.050 e3 3.81 0.150 F 3.8 4.0 0.14 0.157 L 0.4 1.27 0.015 0.050 M S 0.6 0.023 8 (max.) 0016023 7/8 STS3DPFS45 STS3DPFS45 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in lif e support devices or systems without express written approval of STMicroelectronics. The ST logo is registered trademark of STMicroelectronics ® 2002 STMicroelectronics - All Rights Reserved All other names are the property of their respective owners. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://w ww.st.com 8/8