NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Part | Manufacturer | Description | Samples | Ordering |
| TDA20137/1,557 | NXP Semiconductors | 8PSK RF system for single input, dual output applications, SOT684-8 Package, Standard Marking, Tray Dry Pack,Bakeable,Multiple | 
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| TDA20137/1,518 | NXP Semiconductors | 8PSK RF system for single input, dual output applications, SOT684-8 Package, Standard Markigg, Reel Dry Pack, SMD, 13" |
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| Catalog Datasheet Results | Type | Document Tags |
| Abstract: BANGLADESH Prosoft Ltd 108 Profsoyuznaya str., Moscow 117437 Trinity Touch PVT Ltd D-10, Defence , Email: office@lico.at Web-Site: www.lico.at BELARUS Prosoft Ltd 108 Profsoyuznaya str., Moscow , Fax: +55 11 3225-0892 Web-Site: www.rsbrazil.com AZERBAIJAN Prosoft Ltd 108 Profsoyuznaya str , : www.ascotkk.co.jp KAZAKHSTAN Prosoft Ltd 108 Profsoyuznaya str., Moscow 117437 Tel: + 7 095 234 0636 Fax: + 7 , Profsoyuznaya str., Moscow 117437 Tel: + 7 095 234 0636 Fax: + 7 095 234 0640 Email: info@prosoft.ru Web ... | Original |
16 pages, |
k d998 o 225 LT 7224 Radionics CH-8320 BZV 850 STR 2013 application p590 amid Powertronic k d998 str 6352 D1116 p733 D1092 datasheet abstract |
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| Abstract: DD 1 1 + - DD TT 2 2 + - D D 2 + -3- STR D V D D V D D MM MMM D D DT T s DD1 , through PCRS. The output bits are stream synchronized to X1 clock. STR 31 O Network Port Carrier Sense Strobe: The serial bit stream on PCRS can be latched by an external latch using the STR signal. The STR goes high for two X1 clock cycles after the nine carrier sense bits are output through , can drive LEDs to indicate the status of the AUI/TP ports sequentially; the application circuit for ... | Original |
28 pages, |
W89C982AF mau aui 10BASE5 10BASE2 STR 2013 application DTX390 dtx 390 W89C982AF abstract |
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| Abstract: DD DD 1 1 + - DD TT 2 2 + - D D 2 + -3- STR D V D D V D D MM MMM D D DT T s , through PCRS. The output bits are stream synchronized to X1 clock. STR 31 O Network Port Carrier Sense Strobe: The serial bit stream on PCRS can be latched by an external latch using the STR signal. The STR goes high for two X1 clock cycles after the nine carrier sense bits are output through , can drive LEDs to indicate the status of the AUI/TP ports sequentially; the application circuit for ... | Original |
28 pages, |
W89C982AF VU METER 32 led DTX390 10BASE5 10BASE2 LED VU METER TP 41 WITH PIN CONFIGURATION DIAGRAM W89C982AF abstract |
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| Abstract: Example: To connect 4/0 str cable run to B38-4051-00 B38-4051-00 ground plate, use mold B-241 B-241. Illustration at , 1 = #4 STR 5 = 4/0 STR A = 6" D = 24" 2 = #2 STR 6 = 250 MCM B = 12" E = 36" 3 = 1/0 STR 7 = 350 MCM C = 18" F = 48" 4 = 2/0 STR 8 = 500 MCM Example: B38-4532-5C B38-4532-5C would be a BCR-27 BCR-27 type with a B38-4051-00 B38-4051-00 ground plate and a 4/0 str pigtail, 18" 54 , application. See Page 62 for information on these molds and frames. Track Connector Track Connector Kits ... | Original |
45 pages, |
B-2589 STR S 6307 ic str 6307 ic 7905 str 6309 str f 6552 str w 5667 BA 6318 of str 6309 str w 6251 str s 6309 STR 6251 data sheet str 6307 FCI 8609 464 datasheet abstract |
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| Abstract: capacity. Forecast analysts expect the annual newly-installed capacity to treble between 2008 and 2013 , efficiencies of up to 99%. A number of examples illustrating the application of Infineon products in this , PrimeSTACK deliver outstanding features and benefits for your application: Best-in-class IGBT and , Str. 76 , 53123 Bonn 14 Biomass Energy Technologies PrimePACKTM Depending on system and , solutions. This page outlines a number of examples illustrating the application of Infineon products in ... | Original |
20 pages, |
wind plant solar power plant energy efficient transformer designs solar converter 200W solar inverter ORGANIC PHOTOVOLTAICS pv inverter INVERTER TRANSFORMER solar wind energy IGBT inverter wind turbine Electric Bike using wind energy Electric Bike microcontroller datasheet abstract |
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| Abstract: in-lb Min. Tap With Max. Run KS90 12 - 10 str. 16 str. KS15* 10 - 8 str. 14 str. KS17* 8 str. - 6 sol. 14 str. KS17-3 KS17-3* 8 str. - 6 sol. 16 str. KS20* 8 str. - 4 sol. 14 str. KS20-3 KS20-3* 8 str. - 4 sol. 14 str. KS22* 6 str. - 2 sol. 14 str. KS22-3 KS22-3* 6 str. - 2 sol. 80 14 str. 165 275 KS23* 6 - 2 str. 14 str. KS25* 4 - 1/0 str. 14 str. KS26* 2 - 2/0 str. 14 str. KS27* 1 - 3/0 str. 8 sol. ... | Original |
79 pages, |
Penetrox A-13 qa1c-b K22A36U-2 transistor b527 transistor b228 AL9CU astm b298 MS25036 SERIES B589 burndy connector BIT4 UNITAP CONNECTOR UL 486 tables MS25036 Boss White pipe jointing compound datasheet abstract |
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| Abstract: Output Current Io (A) STR2005 STR2005 2012 2013 2015 2024 20005 Operating Temperature (Tc) Top , Off-state Voltage IT (RMS) (A) ITSM (A) STR 80145A 81145A 81159A STR 82145 83145 83159 5.0 , 1.0±0.1 a. Type b. Lot No. 5 b ±0.15 12±0.5 10 2.0±0.1 7.0±0.2 28.0±0.3 STR , 28.0±0.3 STR a ±1.5 36.01.0 3.2±0.1 3.75±0.1 a. Type No. b. Lot No. 4 5 11 , /83000 Example of application circuit Overvoltage protection circuit + R2 R1 D1 C1 ... | Original |
14 pages, |
se 115n SI-8021 SK 8022 SLA7027MU semiconductor STR 20005 datasheet se 110n sk 3052v sk a 3050c SE005 sk 3120c SE005N sk 8120S STR20005 sk 3090c datasheet abstract |
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| Abstract: the receive FIFO to memory. At the same time, the application on the device side finishes and figures , transfer prior to the device re-configuring the DMA parameters. The application on the device side , When using TRANSPARENT mode, the application will be receiving more interrupts, i.e., interrupt will , . Advisory 2.0.13 - EMIFA: Asynchronous Memory Timeout Error Persistence , commands to the SDRAM memory. Therefore, it is not possible for the user/application code to schedule EMIF ... | Original |
28 pages, |
usb1.1 functional diagram SPRZ291B OMAP-L137 EMIFA OMAP ARM926EJ-S ARM926 OMAP-L137 abstract |
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| Abstract: Cable Element "A" Element "B" #6 Sol. (.162) #2 Str. (.292) {59500} {59500} #6 Sol. (.162) #2 Str. (.292) #1 Str. (.332) 250 kcmil (.575) {59500} {59500} {98500} {131500} #2 Str. (.292) 250 kcmil (.575) #2 Str. (.292) 250 kcmil (.575) {65500} {131500} {65500} {131500} #6 Sol. (.162) #2 Str. (.292) 250 kcmil (.575) 500 kcmil (.813) #2 Str. (.292) 250 kcmil (.575) 250 , "A" #6 Sol. (.162) #2 Str. (.292) 3/8 1/2 #2 Str. (.292) 250 kcmil (.575) #3 4 ... | Original |
96 pages, |
ci an 7591 Burndy penetrox UL467 UL-96 str 6552 STR 2013 application burndy Y35 DIE SET u1011 penetrox A burndy compression die index csa 26 str f 6552 yg 2025 STR 5634 burndy Y39 datasheet abstract |
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| Abstract: 1.362 1.288 1.221 1.158 2.332 2.251 2.194 2.137 2.083 2.013 1.950 1.869 1.831 1.728 1.648 , ACSR ASC/AAC 6 Str. - 266.8 C 1 2 3 1 2 3 1 2 3 2 4 4 2 4 4 2 4 4 1-1/4 3 3 1-3/4 3 3 1-3/4 3-1/2 3-1/2 336.4 - 636 605 - 1033.5 Holes in Pad 6 Str. - , for the POWERLUGTM only. MULTIPLE CONDUCTOR TAP APPLICATION Connector WCY 64 PB WCY 65 PB WCY ... | Original |
14 pages, |
WSM6 J-10 J-12 J-13 Burndy REP KIT A WCB19 WCR32 burndy connectors WCY63 WCY72 burndy connector burndy WCY89 C119 WCAY49R-4N datasheet abstract |
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| Abstract | Saved from | Date Saved | File Size | Type | Download |
| Over 1.1 million files (1986-2013): html articles, reference designs, gerber files, chemical content, spice models, programs, code, pricing, images, circuits, parametric data, RoHS data, cross references, pcns, military data, and more. Please note that due to their age, these files do not always format correctly in modern browsers. Disclaimer. |
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| figure • Integrated temperature compensated biasing • Supply and RF output pin combined. APPLICATIONS • RF front end • Wideband applications, e.g. analog and digital cellular telephones, cordless transistor with integrated biasing for low voltage applications in a plastic, 4-pin dual-emitter SOT343R CHARACTERISTICS RF input AC coupled; Tj = 25 °C; unless otherwise specified. Note 1. See application note: RNR-T45 RNR-T45 RNR-T45 RNR-T45 MGS605 MGS605 MGS605 MGS605 100 pF R1 C C RF in RF out VS GND VS-OUTGND IN BGA2001 BGA2001 BGA2001 BGA2001 L1 Fig.2 Typical application circuit www.datasheetarchive.com/download/15609277-597103ZC/microwave_office_design_kit_rf_smal_signal_products.zip (BGA2001_6.pdf) |
NXP | 23/10/2012 | 16125.31 Kb | ZIP | microwave_office_design_kit_rf_smal_signal_products.zip |
| pin combined. APPLICATIONS • RF front end • Wideband applications, e.g. analog and digital cellular transistor with integrated biasing for low voltage applications in a plastic, 4-pin SOT343R package. PINNING specified. Note 1. See application note RNR-T45-99-B-0514 RNR-T45-99-B-0514 RNR-T45-99-B-0514 RNR-T45-99-B-0514. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VS 2003 L1 Fig.2 Typical application circuit. handbook, halfpage 0 50 100 200 200 150 50 0 100 MGS537 MGS537 MGS537 MGS537 150 -05-21 bp UNIT A1 max bp c D Eb1 HE Lp Q wv mm 0.11.10.8 0.4 0.3 0.25 0.10 0.7 0.5 2.2 1.8 1.35 1.15 e 2.2 2.01.3 www.datasheetarchive.com/download/15609277-597103ZC/microwave_office_design_kit_rf_smal_signal_products.zip (BGA2003_4.pdf) |
NXP | 23/10/2012 | 16125.31 Kb | ZIP | microwave_office_design_kit_rf_smal_signal_products.zip |
| . APPLICATIONS • RF front end • Wideband applications, e.g. analog and digital cellular telephones, cordless applications in a plastic, 4-pin dual-emitter SOT343R package. PINNING PIN DESCRIPTION 1 emitter 2 base 3 HE Lp Q wv mm 0.11.10.8 0.4 0.3 0.25 0.10 0.7 0.5 2.2 1.8 1.35 1.15 e 2.2 2.01.3 e1 0.2 y 0 Semiconductors Product specification NPN 25 GHz wideband transistor BFG425W BFG425W BFG425W BFG425W DEFINITIONS LIFE SUPPORT APPLICATIONS or selling these products for use in such applications do so at their own risk and agree to fully www.datasheetarchive.com/download/15609277-597103ZC/microwave_office_design_kit_rf_smal_signal_products.zip (BFG425W_4.pdf) |
NXP | 23/10/2012 | 16125.31 Kb | ZIP | microwave_office_design_kit_rf_smal_signal_products.zip |
| operating area • Linear and non-linear operation. APPLICATIONS • Common emitter class-AB output stage in applications encapsulated in a plastic, 4-pin dual-emitter SOT343R package. PINNING PIN DESCRIPTION 1, 3 CHARACTERISTICS Tj = 25 °C unless otherwise specified. APPLICATION INFORMATION RF performance at Ts ≤ 60 °C in a .10 0.7 0.5 2.2 1.8 1.35 1.15 e 2.2 2.01.3 e1 0.2 y 0.10.21.15 DIMENSIONS (mm are the original power transistor BFG21W BFG21W BFG21W BFG21W DEFINITIONS LIFE SUPPORT APPLICATIONS These products are not designed for use in www.datasheetarchive.com/download/15609277-597103ZC/microwave_office_design_kit_rf_smal_signal_products.zip (BFG21W_3.pdf) |
NXP | 23/10/2012 | 16125.31 Kb | ZIP | microwave_office_design_kit_rf_smal_signal_products.zip |
| power gain • Low noise figure • High transition frequency • Very low feedback capacitance. APPLICATIONS • Pager front ends • RF front end • Wideband applications, e.g. analog and digital cellular telephones transistor with buried layer for low voltage applications in a plastic, 4-pin dual-emitter SOT343R package -05-21 bp UNIT A1 max bp c D Eb1 HE Lp Q wv mm 0.11.10.8 0.4 0.3 0.25 0.10 0.7 0.5 2.2 1.8 1.35 1.15 e 2.2 2.01.3 DEFINITIONS LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances www.datasheetarchive.com/download/15609277-597103ZC/microwave_office_design_kit_rf_smal_signal_products.zip (BFG403W_4.pdf) |
NXP | 23/10/2012 | 16125.31 Kb | ZIP | microwave_office_design_kit_rf_smal_signal_products.zip |
| . APPLICATIONS • RF front end • Wideband applications, e.g. analog and digital cellular telephones, cordless applications in a plastic, 4-pin dual-emitter SOT343R package. PINNING PIN DESCRIPTION 1 emitter 2 base 3 -05-21 bp UNIT A1 max bp c D Eb1 HE Lp Q wv mm 0.11.10.8 0.4 0.3 0.25 0.10 0.7 0.5 2.2 1.8 1.35 1.15 e 2.2 2.01.3 DEFINITIONS LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances injury. Philips customers using or selling these products for use in such applications do so at their own www.datasheetarchive.com/download/15609277-597103ZC/microwave_office_design_kit_rf_smal_signal_products.zip (BFG410W_4.pdf) |
NXP | 23/10/2012 | 16125.31 Kb | ZIP | microwave_office_design_kit_rf_smal_signal_products.zip |
| mA) • Low noise figure • Gold metallization ensures excellent reliability. APPLICATIONS Wideband applications in UHF low power amplifiers, such as pocket telephones and paging systems. DESCRIPTION NPN silicon PROJECTION ISSUE DATE IEC JEDEC EIAJ mm 0.11.10.8 0.4 0.3 0.25 0.10 0.7 0.5 2.2 1.8 1.35 1.15 e 2.2 2.01.3 wideband transistors BFG25AW BFG25AW BFG25AW BFG25AW; BFG25AW/X BFG25AW/X BFG25AW/X BFG25AW/X DEFINITIONS LIFE SUPPORT APPLICATIONS These products are not use in such applications do so at their own risk and agree to fully indemnify Philips for any damages www.datasheetarchive.com/download/15609277-597103ZC/microwave_office_design_kit_rf_smal_signal_products.zip (BFG25AW_X_3.pdf) |
NXP | 23/10/2012 | 16125.31 Kb | ZIP | microwave_office_design_kit_rf_smal_signal_products.zip |
| . APPLICATIONS RF front end wideband applications in the GHz range, such as analog and digital cellular .4 0.3 0.25 0.10 0.7 0.5 2.2 1.8 1.35 1.15 e 2.2 2.01.3 e1 0.2 y 0.10.21.15 DIMENSIONS (mm are the -05-21 bp UNIT A1 max bp c D Eb1 HE Lp Q wv mm 0.11.10.8 0.4 0.3 0.25 0.10 0.7 0.5 2.2 1.8 1.35 1.15 e 2.2 2.01.3 reliability. Application information Applications that are described herein for any of these products are applications will be suitable for the specified use without further testing or modification. DISCLAIMERS Life www.datasheetarchive.com/download/15609277-597103ZC/microwave_office_design_kit_rf_smal_signal_products.zip (BFG540W_WX_WXR_4.pdf) |
NXP | 23/10/2012 | 16125.31 Kb | ZIP | microwave_office_design_kit_rf_smal_signal_products.zip |
| . APPLICATIONS RF front end wideband applications in the GHz range, such as analog and digital cellular .4 0.3 0.25 0.10 0.7 0.5 2.2 1.8 1.35 1.15 e 2.2 2.01.3 e1 0.2 y 0.10.21.15 DIMENSIONS (mm are the -05-21 bp UNIT A1 max bp c D Eb1 HE Lp Q wv mm 0.11.10.8 0.4 0.3 0.25 0.10 0.7 0.5 2.2 1.8 1.35 1.15 e 2.2 2.01.3 reliability. Application information Applications that are described herein for any of these products are applications will be suitable for the specified use without further testing or modification. DISCLAIMERS Life www.datasheetarchive.com/download/15609277-597103ZC/microwave_office_design_kit_rf_smal_signal_products.zip (BFG540W_WX_WXR_4.pdf) |
NXP | 23/10/2012 | 16125.31 Kb | ZIP | microwave_office_design_kit_rf_smal_signal_products.zip |
| . APPLICATIONS RF front end wideband applications in the GHz range, such as analog and digital cellular .4 0.3 0.25 0.10 0.7 0.5 2.2 1.8 1.35 1.15 e 2.2 2.01.3 e1 0.2 y 0.10.21.15 DIMENSIONS (mm are the -05-21 bp UNIT A1 max bp c D Eb1 HE Lp Q wv mm 0.11.10.8 0.4 0.3 0.25 0.10 0.7 0.5 2.2 1.8 1.35 1.15 e 2.2 2.01.3 reliability. Application information Applications that are described herein for any of these products are applications will be suitable for the specified use without further testing or modification. DISCLAIMERS Life www.datasheetarchive.com/download/15609277-597103ZC/microwave_office_design_kit_rf_smal_signal_products.zip (BFG540W_WX_WXR_4.pdf) |
NXP | 23/10/2012 | 16125.31 Kb | ZIP | microwave_office_design_kit_rf_smal_signal_products.zip |