STP5NK100Z STF5NK100Z STW5NK100Z F5NK100Z P5NK100Z W15NK100Z - Datasheet Archive

 

STW5NK100Z N-CHANNEL 1000V - 2.7 - 3.5A TO-220/TO-220FP/TO-247 Zener-Protected SuperMESHTMMOSFET Figure 1: Package Table 1:

 

STP5NK100Z STP5NK100Z - STF5NK100Z STF5NK100Z STW5NK100Z STW5NK100Z N-CHANNEL 1000V - 2.7 - 3.5A TO-220/TO-220FP/TO-247 Zener-Protected SuperMESHTMMOSFET Figure 1: Package Table 1: General Features TYPE VDSS RDS(on) ID Pw STF5NK100Z STF5NK100Z STP5NK100Z STP5NK100Z STW5NK100Z STW5NK100Z 1000 V 1000 V 1000 V < 3.7 < 3.7 < 3.7 3.5 A (*) 3.5 A 3.5 A 30 W 125 W 125 W s s s s s s s TYPICAL RDS(on) = 2.7 EXTREMELY HIGH dv/dt CAPABILITY IMPROVED ESD CAPABILITY 100% AVALANCHE RATED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING REPEATIBILITY 3 1 TO-220 2 TO-220FP 3 2 1 DESCRIPTION The SuperMESHTM series is obtained through an extreme optimization of ST's well established stripbased PowerMESHTM layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmeshTM products. TO-247 Figure 2: Internal Schematic Diagram APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s IDEAL FOR OFF-LINE POWER SUPPLIES Table 2: Order Codes SALES TYPE MARKING PACKAGE PACKAGING STF5NK100Z STF5NK100Z F5NK100Z F5NK100Z TO-220FP TUBE STP5NK100Z STP5NK100Z P5NK100Z P5NK100Z TO-220 TUBE STW5NK100Z STW5NK100Z W15NK100Z W15NK100Z TO-247 TUBE Rev. 2 October 2004 1/12 STP5NK100Z STP5NK100Z - STF5NK100Z STF5NK100Z - STW5NK100Z STW5NK100Z Table 3: Absolute Maximum ratings Symbol Parameter Value STP5NK100Z STP5NK100Z STW5NK100Z STW5NK100Z VDS VDGR VGS Unit STF5NK100Z STF5NK100Z Drain-source Voltage (VGS = 0) 1000 V Drain-gate Voltage (RGS = 20 k) 1000 V Gate- source Voltage ± 30 V ID Drain Current (continuous) at TC = 25°C 3.5 3.5 (*) A ID Drain Current (continuous) at TC = 100°C 2.2 2.2 (*) A Drain Current (pulsed) 14 14 (*) A Total Dissipation at TC = 25°C 125 30 W 0.24 W/°C IDM ( ) PTOT Derating Factor VESD(G-S) dv/dt (1) 1 Gate source ESD(HBM-C=100pF, R=1.5K) 4000 4.5 Peak Diode Recovery voltage slope VISO Insulation Withstand Voltage (DC) Tj Tstg Operating Junction Temperature Storage Temperature V V/ns - 2500 -55 to 150 -55 to 150 V °C °C ( ) Pulse width limited by safe operating area (1) ISD 3.5A, di/dt 200A/µs, VDD V(BR)DSS, Tj TJMAX. (*) Limited only by maximum temperature allowed Table 4: Thermal Data TO-220 TO-247 TO-220FP 1 4.2 Rthj-case Thermal Resistance Junction-case Max Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W Maximum Lead Temperature For Soldering Purpose 300 °C Max Value Unit Tl °C/W Table 5: Avalanche Characteristics Symbol Parameter IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) 3.5 A EAS Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) 250 mJ Table 6: Gate-Source Zener Diode Symbol Parameter Test Conditions Min. BVGSO Gate-Source Breakdown Voltage Igs=± 1mA (Open Drain) 30 Typ. Max. Unit V PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device's ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device's integrity. These integrated Zener diodes thus avoid the usage of external components. 2/12 STP5NK100Z STP5NK100Z - STF5NK100Z STF5NK100Z - STW5NK100Z STW5NK100Z ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED) Table 7: On /Off Symbol Parameter Test Conditions V(BR)DSS Drain-source Breakdown Voltage ID = 1 mA, VGS = 0 IDSS Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) VGS = ± 20 V VGS(th) Gate Threshold Voltage VDS = VGS, ID = 100 µA RDS(on) Static Drain-source On Resistance VGS = 10 V, ID = 1.75 A Typ. VDS = Max Rating VDS = Max Rating, TC = 125°C IGSS Min. Max. 1000 Unit V 1 50 ± 10 3 µA µA µA 3.75 4.5 V 2.7 3.7 Typ. Max. Unit Table 8: Dynamic Symbol gfs (1) Parameter Test Conditions S 1154 106 21.3 pF pF pF Equivalent Output Capacitance VGS = 0 V, VDS = 0 to 800 V 46.8 pF td(on) tr td(off) tf Turn-on Delay Time Rise Time Turn-off-Delay Time Fall Time VDD = 500 V, ID = 1.75 A, RG = 4.7 , VGS = 10 V (see Figure 21) 22.5 7.7 51.5 19 ns ns ns ns Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 800 V, ID = 3.5 A, VGS = 10 V (see Figure 24) 42 7.3 21.7 Coss eq (3). VDS = 15 V , ID = 1.75 A Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. 4 Ciss Coss Crss Forward Transconductance VDS = 25 V, f = 1 MHz, VGS = 0 59 nC nC nC Max. Unit 3.5 14 A A 1.6 V Table 9: Source Drain Diode Symbol Parameter Test Conditions Min. Typ. ISD ISDM (2) Source-drain Current Source-drain Current (pulsed) VSD (1) Forward On Voltage ISD = 3.5 A, VGS = 0 Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 3.5 A, di/dt = 100 A/µs VDD = 35V (see Figure 22) 605 3.09 10.5 ns µC A Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 3.5 A, di/dt = 100 A/µs VDD = 35V, Tj = 150°C (see Figure 22) 742 4.2 11.2 ns µC A trr Qrr IRRM trr Qrr IRRM (1) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. (2) Pulse width limited by safe operating area. (3) Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS. 3/12 STP5NK100Z STP5NK100Z - STF5NK100Z STF5NK100Z - STW5NK100Z STW5NK100Z Figure 3: Safe Operating Area For TO-220 Figure 6: Thermal Impedance TO-220 Figure 4: Safe Operating Area For TO-220FP Figure 7: Thermal Impedance For TO-220FP Figure 5: Safe Operating Area For TO-247 Figure 8: Thermal Impedance For TO-247 4/12 STP5NK100Z STP5NK100Z - STF5NK100Z STF5NK100Z - STW5NK100Z STW5NK100Z Figure 9: Output Characteristics Figure 12: Transfer Characteristics Figure 10: Transconductance Figure 13: Static Drain-Source On Resistance Figure 11: Gate Charge vs Gate-source Voltage Figure 14: Capacitance Variations 5/12 STP5NK100Z STP5NK100Z - STF5NK100Z STF5NK100Z - STW5NK100Z STW5NK100Z Figure 15: Normalized Gate Threshold Voltage vs Temperature Figure 18: Normalized On Resistance vs Temperature Figure 16: Source-Drain Forward Characteristics Figure 19: Normalized BVDSS vs Temperature Figure 17: Maximum Avalanche Energy vs Temperature 6/12 STP5NK100Z STP5NK100Z - STF5NK100Z STF5NK100Z - STW5NK100Z STW5NK100Z Figure 20: Unclamped Inductive Load Test Circuit Figure 23: Unclamped Inductive Wafeform Figure 21: Switching Times Test Circuit For Resistive Load Figure 24: Gate Charge Test Circuit Figure 22: Test Circuit For Inductive Load Switching and Diode Recovery Times 7/12 STP5NK100Z STP5NK100Z - STF5NK100Z STF5NK100Z - STW5NK100Z STW5NK100Z TO-220 MECHANICAL DATA DIM. mm. MIN. TYP inch MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 b 0.61 0.88 0.024 0.034 b1 1.15 1.70 0.045 0.066 c 0.49 0.70 0.019 0.027 D 15.25 15.75 0.60 0.620 E 10 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 F 1.23 1.32 0.048 0.052 H1 6.20 6.60 0.244 0.256 J1 2.40 2.72 0.094 0.107 0.551 L 13 14 0.511 L1 3.50 3.93 0.137 L20 16.40 L30 0.154 0.645 28.90 1.137 øP 3.85 0.147 0.151 Q 8/12 3.75 2.65 2.95 0.104 0.116 STP5NK100Z STP5NK100Z - STF5NK100Z STF5NK100Z - STW5NK100Z STW5NK100Z TO-220FP MECHANICAL DATA mm. DIM. MIN. A inch TYP MAX. 4.6 4.4 MIN. TYP. 0.173 0.181 MAX. 0.106 B 2.5 2.7 0.098 D 2.5 2.75 0.098 0.108 E 0.45 0.7 0.017 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.7 0.045 0.067 F2 1.15 1.7 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 0.409 L2 16 0.630 L3 28.6 30.6 1.126 1.204 L4 9.8 10.6 .0385 0.417 L5 2.9 3.6 0.114 0.141 L6 15.9 16.4 0.626 0.645 9 9.3 0.354 0.366 Ø 3 3.2 0.118 0.126 B D A E L7 L3 L6 F2 H G G1 F F1 L7 L2 L5 1 2 3 L4 9/12 STP5NK100Z STP5NK100Z - STF5NK100Z STF5NK100Z - STW5NK100Z STW5NK100Z TO-247 MECHANICAL DATA DIM. mm. MIN. TYP inch MAX. MIN. TYP. MAX. A 4.85 5.15 0.19 0.20 A1 2.20 2.60 0.086 0.102 b 1.0 1.40 0.039 0.055 b1 2.0 2.40 0.079 0.094 b2 3.0 3.40 0.118 0.134 c 0.40 0.80 0.015 0.03 D 19.85 20.15 0.781 0.793 E 15.45 15.75 0.608 0.620 e 5.45 0.214 L 14.20 14.80 0.560 L1 3.70 4.30 0.14 L2 18.50 0.582 0.17 0.728 øP 3.55 3.65 0.140 0.143 øR 4.50 5.50 0.177 0.216 S 10/12 5.50 0.216 STP5NK100Z STP5NK100Z - STF5NK100Z STF5NK100Z - STW5NK100Z STW5NK100Z Table 10: Revision History Date Revision 27-Sep-2004 08-Oct-2004 1 2 Description of Changes First release. Final datasheet 11/12 STP5NK100Z STP5NK100Z - STF5NK100Z STF5NK100Z - STW5NK100Z STW5NK100Z Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics All other names are the property of their respective owners © 2004 STMicroelectronics - All Rights Reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 12/12