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STP3NB60 Datasheet

Part Manufacturer Description PDF Type
STP3NB60 STMicroelectronics Metal oxide N-channel FET, Enhancement Type Original
STP3NB60 STMicroelectronics N-CHANNEL ENHANCEMENT MODE POWERMESH MOSFET Original
STP3NB60 STMicroelectronics N - Channel Enhancement Mode PowerMESH MOSFET Original
STP3NB60 Toshiba Power MOSFETs Cross Reference Guide Original
STP3NB60FP STMicroelectronics N-CHANNEL ENHANCEMENT MODE POWERMESH MOSFET Original
STP3NB60FP STMicroelectronics Metal oxide N-channel FET, Enhancement Type Original
STP3NB60FP STMicroelectronics N - Channel Enhancement Mode PowerMESH MOSFET Original
STP3NB60FP Toshiba Power MOSFETs Cross Reference Guide Original
STP3NB60K STMicroelectronics N-CHANNEL 3A-600V-TO-220 SHORT CIRCUIT PROOF PowerMESH IGBT Original

STP3NB60

Catalog Datasheet MFG & Type PDF Document Tags

STP3NB60

Abstract: STP3NB60FP STP3NB60 STP3NB60FP N - CHANNEL ENHANCEMENT MODE PowerMESHTM MOSFET TYPE V DSS STP3NB60 STP3NB60FP s s s s s R DS(on) ID 600 V 600 V , Symbol Parameter Value STP3NB60 Uni t STP3NB60FP Drain-source Voltage (V GS = 0) 600 , Junction Temperature 2000 V -65 to 150 o C 150 o C 1/9 STP3NB60/FP THERMAL , STP3NB60/FP ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symb ol Typ . Max. Un it t d
STMicroelectronics
Original
STP3NB60/FP

P3NB60

Abstract: P3NB60FP STP3NB60 STP3NB60FP N-CHANNEL 600V - 3.3 - 3.3A TO-220/TO-220FP PowerMESHTM MOSFET Figure 1. Package Table 1. General Features Type VDSS RDS(on) ID STP3NB60 600 V < 3.6 3.3 A STP3NB60FP 600 V < 3.6 2.2 A FEATURES SUMMARY TYPICAL RDS(on) = 3.3 , STP3NB60FP P3NB60FP TO-220FP TUBE REV. 2 April 2004 1/11 STP3NB60/FP Table 3. Absolute Maximum Ratings Value Symbol Parameter Unit STP3NB60 VDS VDGR VGS STP3NB60FP
STMicroelectronics
Original
P3NB60 V1522 Part Marking TO-220 STMicroelectronics p3nb60fp datasheet

P3NB60

Abstract: P3NB60FP STP3NB60 STP3NB60FP N-CHANNEL 600V - 3.3 - 3.3A TO-220/TO-220FP PowerMESHTM MOSFET Figure 1. Package Table 1. General Features Type VDSS RDS(on) ID STP3NB60 600 V < 3.6 3.3 A STP3NB60FP 600 V < 3.6 2.2 A FEATURES SUMMARY TYPICAL RDS(on) = 3.3 , Table 2. Order Codes Part Number Marking Package Packaging STP3NB60 P3NB60 TO-220 TUBE STP3NB60FP P3NB60FP TO-220FP TUBE REV. 2 April 2004 1/11 STP3NB60/FP Table
STMicroelectronics
Original
transistor P3NB60FP p3nb DSASW003744

SC-751

Abstract: SGS-THOMSON M O eoe ilLieTri^O lDei STP3NB60 STP3NB60FP N - CHANNEL ENHANCEMENT MODE PowerMESHTM MOSFET TYPE STP3NB60 STP3NB60FP m Voss 600 V 600 V R D S(on) Id 3.3 A 2.2 A , DIAGRAM Parameter STP3NB60 Drain-source Voltage (V gs = 0) Drain- gate Voltage (R gs = 20 ki2 , 0.64 4.5 - Value STP3NB60FP 600 600 ± 30 2.2 1.4 13.2 35 0.28 4.5 2000 -65 to 150 150 Unit V V V A A A W W/°C V/ns V Plot d v /d t(i) V iso T stg Tj March 1998 °C °C 1/9 STP3NB60
-
OCR Scan
SC-751

STP3NB60

Abstract: STP3NB60FP STP3NB60 STP3NB60FP N - CHANNEL ENHANCEMENT MODE PowerMESHTM MOSFET TYPE V DSS STP3NB60 STP3NB60FP s s s s s R DS(on) ID 600 V 600 V , Symbol Parameter Value STP3NB60 V DS V DGR V GS Drain-source Voltage (V GS = 0) V , STP3NB60FP 600 ID IDM (·) Unit 3.3 2.2 2.1 1.4 A 13.2 13.2 A 80 35 W , 150 o C 150 o C 1/9 STP3NB60/FP THERMAL DATA TO-220 R thj-case Thermal
STMicroelectronics
Original

std2n52

Abstract: stp2na60 STP20NE06LFP STP20NE06L STP20NE06LFP STP22NE03L STP30NE06 STP30NE06 STP3NB60 STP3NB60FP STP2N80 , STP3NA90 STP3NA90FI STP3NB60 STP3NB60FP STP40N03L-20 STP40N05 STP40N10 STP40NE03L-20 STP45N10 , SGS-THOMSON nearest preferred STP3NB60FP STP3NA80 STP3NA80FI STP3NA90 STP3NA90FI STP3NB60 STP3NB60FP , STP9NB50FP STP3NB60FP STW16NA60 STB19NB20 STB7NB60 STP6NB50FP STH18NB40FI STB16NB25 STP3NB60FP , preferred IRF520 IRF530FI IRF530FI STP10NB20FP STP10NB20FP STP5NB40FP STP4NB50FP STP3NB60FP
STMicroelectronics
Original
STU16NB50I YTA630 STP19NB20 std2n52 stp2na60 buz102 equivalent SSH6N80 rfp60n06 BUZ91 equivalent 2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154
Abstract: SGS-THOMSON R e !< )[l[L , â'™[K RD $ fflDiE s [ien Ì@D(S STP3NB60 STP3NB60FP N - CHANNEL , 150 °c 1/9 STP3NB60/FP THERMAL DATA TO -220 R e s is ta n c e J u n c tio n -c a s e , L L LL L L Q Q_ Q_ _ C iss Coss P aram eter STP3NB60/FP ELECTRICAL CHARACTERISTICS , Area for TO-220 Safe Operating Area for TO-22QFP 3/9 STP3NB60/FP Thermal Impedance for TO , 0 4/9 1 2 3 4 I d( A) 57 STP3NB60/FP Gate Charge vs Gate-source Voltage -
OCR Scan
B60FP

W0485

Abstract: STP3NB60 * MODELLING FOR STP3NB60 .SUBCKT STP3NB60 1 2 3 LG 2 4 7.5n LS 12 3 7.5n LD 6 1 4.5n RG 4 5 2.00636 RS 9 12 0.595822E-04 RD 7 6 2.54386 RJ 8 7 0.379139E-01 CGS 5 9 0.805062E-12 CGD 7 10 0.245128E-09 CK 11 7 0.116738E-10 DGD 11 7 DGD DBS 12 6 DBS DBD 9 7 DBD MOS 13 5 9 9 MOS L=0.320181E-05 W=0.485661 E1 10 5 101 0 1 E2 11 5 102 0 1 E3 8 13 POLY(2) 6 8 6 12 0 0 0 0 0.447770E-01 G1 0 100 7 5 1u D1 100 101 DID D2 102 100 DID R1 101 0 1MEG R2 102 0 1MEG .ENDS STP3NB60 .MODEL MOS NMOS + LEVEL =
STMicroelectronics
Original
W0485 1E-38 104645E-06 257331E 229038E-01 995921E-05 164368E-01 552726E-12

IRF540 complementary

Abstract: IRFZ44N complementary STP7NB60 STP5NB60FP STP5NB60 STP3NB60 STP3NB60FP STW8NB80 STW8NB80 STP4NA80 STP4NA80FI STP4NA90FI , STP5NB60FP STP5NB60 STP3NB60FP STP3NB60FP STD2NB60 STW8NB80 STH8NA80FI STW6NB80 STW8NB90 STW8NB90 , STP6NB50FP STP9NB50FP STP9NB50FP STP3NB60FP STP5NB60FP STP7NB60FP STP7NB60FP STP2N80FI STP4NB80FP , STP19NB20 IRF540 STP2NA50 STP3NB60 STP16NE06 STP16NE06FP STP16NE06L STP16NE06 STP16NE06L STP30NE06L , STP3NB60FP STD2NA60 STD2NA60-1 STW9NA80 STW9NA80 STW8NA80 STP7NB80 STP6NA80 STW7NA80 STP5N80
STMicroelectronics
Original
STP3N60FI IRF540 complementary IRFZ44N complementary TOSHIBA IRFZ44A datasheet ste38na50 IRF630 complementary IRF3205 IR RFP6N50 RFD16N03LSM RFP15N05L RFP50N05 RFP15N05 RFP50N05L

SSH6N80

Abstract: rfp60n06 STP3NA60 STP3NA60FI STP3NB60 STP3NB60FP STP3NB80 STP3NB80FP STP3NB90 STP3NB90FP STP40N03L , STP30NE06 STP30NE06 STP3NB60 STP3NB60FP STP4NB50 STP30NE06 STP30NE06L STP36NE06 STP36NE06FP , STP4NB50FP STP3NB60 STP3NB60FP STP40NE03L-20 STP36NE06 STP50NE10 STP4NA100 STP3NB90 STP3NB90FP , STD12NE06 STD12NE06L STP3NB90FP STP3NB90FP STP4NB60FP STP3NB60FP STP4NB80FP STP3NB90FP STP55NE06FP , STP9NB50FP STP9NB50FP STP3NB60FP STW16NA60 STB19NB20 STB7NB60 STP6NB50FP STH18NB40FI Supplier
STMicroelectronics
Original
2SK2717 BUK417-500AE SFP70N03 BUZ91A STMicroelectronics BUZ22 BUZ10 BUZ11 BUZ11A BUZ71 BUZ71A BUZ72A

scr battery charger

Abstract: IGNITION WITH SCR Type BU801 BU900TP STP4NA100 STD4N25 STP3NB60 ICC03/ICC01 Function Power Darlington in SOT
STMicroelectronics
Original
ICC01 SO402DH SO402MH VB020-4 VB027 TYN425 scr battery charger IGNITION WITH SCR Battery Charger with SCR SO402 TIP50 TIP54 BUT11A FLC02 ICC03

ste30na50

Abstract: STP3N60FI STP9NB60FP 5.2 1.20 STP7NB60FP 4.1 2.00 STP5NB60FP 3.0 3.60 STP3NB60FP 2.1 , STP3NB60 800 1.600 1.900 2.200 2.200 3.3 © STP7NB80 STP6NB80 STP5NA80 STP5NB80 © 6.5
STMicroelectronics
Original
STN3NE06L STP15N25 STP4NB90 ste30na50 STE45N50 STHV82 ste24n90 stk2n50 STB55N06 STN4NE03L STN4NE03 STN3NE06 STN2N10 STN2NE10L

P12NB30

Abstract: P12NB30FP STP12NB30 STP12NB30FP N - CHANNEL ENHANCEMENT MODE PowerMESHTM MOSFET PRELIMINARY DATA TYPE V DSS R DS(on) ID STP3NB60 STP12NB30F P 300 V 300 V < 0.40 < 0.40 12A 6.5 A s s s s s TYPICAL RDS(on) = 0.34 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED DESCRIPTION Using the latest high voltage MESH OVERLAYTM process, SGS-Thomson has designed an advanced family of power MOSFETs with
STMicroelectronics
Original
P12NB30 P12NB30FP P12NB STP12N A12535 STP12NB30/FP

dc-dc converter with irfp460

Abstract: IRFP450 full bridge STP5NB60/FP IRFBC30 STP4NC60/FP STP3NB60/FP TO-247 TO-220 TO-220 TO-220 TO-220 TO-220 / FP
STMicroelectronics
Original
STW20NB50 IRFP460 STW18NB40 dc-dc converter with irfp460 IRFP450 full bridge IRFP460 full bridge IRFP450 bridge STP90NF03L STW14NM50 STW15NB50 IRFP450 STP12NM50/FP

STP3N60FI

Abstract: IRF540 complementary STP5NB60 IRFBC30 STP3NB60 STP7NB80 STP6NB80 STP5NB80 BUZ80A ID(cont) REPLACED 5.5 4.7 10 , 2.8 4.4 5 5.5 STP3NB60FP STP7NB80FP STP6NB80FP STP5NB80FP STP4NB80FP STP3NB80FP STP6NB90FP
STMicroelectronics
Original
STP3020L STP4NB90FP STP6NA80FP IRF640 complementary STD1NB60 IRF730 complementary STP53N06 STP80NF03L-04 STP80NE03L-06 STP60NE03L-10 STP60NE03L-12 STP3015L STP40NF03L

irf840 power supply

Abstract: STP3020L STP11NM60 STP9NC60 STP9NB60 STP7NB60 STP6NC60 IRFBC40 STP5NB60 STP4NC60 IRFBC30 STP3NB60 , STP5NB60FP STP3NB60FP STP8NC70FP STP5NC70ZFPx STB4NC70ZFPx STP6NC80ZFP x STP7NB80FP STP6NB80FP
STMicroelectronics
Original
STP50NF03L STP80NF55-08 STP38NF06L STP22NE10L STP5NB90FP irf840 power supply STN1NB80 IRF740 STP3NC90Z STP12PF06 STP70NF3LL STP70NF03L STP60NF03L STP55NF03L

std2n52

Abstract: stp3n60 STP4NA60 STP4NA60FI MTP3N60 STP2N60 STD2NB60 STP3NB60 STP3NB60FP STD2NA60 STP3NA60 STP3NA60FI
STMicroelectronics
Original
STB80NE03L-06 STP60NE06-16 stp3n60 FTP5021-0 TO220 TO-220 std3na50-1 220TM MAX220TM 218TM MAX247TM STB60NE03L-10

mosfet cross reference

Abstract: Power MOSFET Cross Reference Guide STP3NA50 STP3NA60 STP3NA80 STP3NB60 STP40N03L-20 Motorola Replacement Motorola Similar
Motorola
Original
mosfet cross reference Power MOSFET Cross Reference Guide 2SK2146 Cross Reference power MOSFET MOSFET TOSHIBA 2SK SUP60NO6-18 2SJ334 2SJ380 2SJ402 2SJ412 2SJ419 2SJ420

MTP6N60E equivalent

Abstract: buz91a equivalent Company VDS [V] ST ST ST ST ST ST ST ST ST ST ST ST ST STH13NB60FI STP3NB60
Infineon Technologies
Original
MTW7N80E MTP6N60E equivalent buz91a equivalent buz90 equivalent IRFBE30 equivalent IRFB11N50A equivalent irfp460a equivalent IRF820 IRF820A IRF820AS IRF820S IRF830A IRF830AS

BTA12 600V

Abstract: scr 600v 12a TO-220 STP5NB60/FP IRFBC30 STP4NC60/FP STD3NC60/-1 STD2NB60/-1 STD2NC60/-1 STP3NB60/FP STP3NC60/FP
STMicroelectronics
Original
BTA12 600V scr 600v 12a TO-220 triac 600v. 1a. to 92 diac 30v triac 1200V triac 10A STBV68 STBV45 STBV42 STBV32 STX13003 ST13003
Abstract: STP12NB30 STP12NB30FP N - CHANNEL ENHANCEMENT MODE PowerMESHTM MOSFET PRELIMINARY DATA TYPE V DSS R DS(on) ID STP3NB60 STP12NB30F P 300 V 300 V < 0.40 < 0.40 12A 6.5 A s s s s s TYPICAL RDS(on) = 0.34 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED DESCRIPTION Using the latest high voltage MESH OVERLAYTM process, SGS-Thomson has designed an advanced family of power MOSFETs with -
OCR Scan
B30FP
Abstract: STP5NB60 IRFBC30 STP3NB60 STP7NB80 STP6NB80 STP5NB80 BUZ80A ID(cont) REPLACED 5.5 4.7 10 -
OCR Scan
SC06UO TP12N STP12NB3Q/FP
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