NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
STM2DPFS30L - Datasheet Archive
® P - CHANNEL 30V - 0.145 - 2A MiniS0-8 STripFET MOSFET PLUS SCHOTTKY RECTIFIER TM PRELIMINARY DATA MAIN PRODUCT
STM2DPFS30L STM2DPFS30L ® P - CHANNEL 30V - 0.145 - 2A MiniS0-8 STripFET MOSFET PLUS SCHOTTKY RECTIFIER TM PRELIMINARY DATA MAIN PRODUCT CHARACTERISTICS MOSFET V DSS R DS(on ) ID 30V ID(o n) x R DS(on )ma x V GS = 10 V A DYNAMIC Symbo l g f s () C iss C os s C rss 2/6 Parameter Forward Transconductance Test Con ditions V DS > ID(o n) x R DS(on )ma x Input Capacitance V DS = 25 V Output Capacitance Reverse T ransfer Capacitance f = 1 MHz I D =1 A V GS = 0 Min. Typ. Max. 2 510 170 55 Unit S 660 220 72 pF pF pF STM2DPFS30L STM2DPFS30L ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbo l Typ. Max. Unit t d(on) tr Turn-on Delay T ime Rise Time Parameter V DD = 15 V I D = 1.5 A R G = 4.7 V GS = 4.5 V (Resistive Load, see fig. 1) Test Con ditions 14.5 37 19 48 ns ns Qg Q gs Q gd Total G ate Charge Gate-Source Charge Gate-Drain Charge V DD = 24 V 5.5 1.7 1.8 ID = 3 A Min. V GS = 5 V nC nC nC SWITCHING OFF Symbo l t d(of f) tf Parameter Turn-off Delay T ime Fall T ime Test Con ditions Min. Typ. Max. 88 23 V DD = 15 V ID = 1.5 A V GS = 4.5 V R G = 4.7 (Resistive Load, see fig. 1) Unit ns ns SOURCE DRAIN DIODE Symbo l Parameter ISD I SDM (·) Source-drain Current Source-drain Current (pulsed) V SD () Forward On Voltage t rr Q rr I RRM Reverse Time Reverse Charge Reverse Current Test Con ditions Typ. Recovery I SD = 2 A V DD = 15V Recovery Unit A A 1.2 V GS = 0 Max. 2 8 I SD = 2 A Min. V ns di/dt = 100 A/µs T j = 150 o C tbd nC Recovery () Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % (·) Pulse width limited by safe operating area SCHOTTKY STATIC ELETTRICAL CHARACTERISTICS Symbo l I R () V F() Parameter Reversed Current Test Con ditions o Leakage T J= 25 C T J= 100 oC Forward Voltage drop T J= T J= T J= T J= 25 oC o 100 C o 25 C 100 oC Min. V R =40V V R=40V I F =1A I F =1A I F =2A I F =2A Typ. Max. Unit 1.5 40 5 µA mA 0.55 0.51 0.7 0.7 V V V V 0.45 3/6 STM2DPFS30L STM2DPFS30L Fig. 1: Switching Times Test Circuits For Resistive Load 4/6 Fig. 2: Gate Charge test Circuit STM2DPFS30L STM2DPFS30L MiniSO-8 MECHANICAL DATA A A1 A2 D D2 E E1 E2 E3 E4 mm TYP. 1.10 0.10 0.86 3.00 2.95 4.90 3.00 2.95 0.51 0.51 R R1 t1 t2 1 2 L L1 e S 0.15 0.15 0.31 0.41 3.0° 12.0° 0.55 0.95 0.65 0.525 DIM. MIN. MAX. MIN. inch TYP. MAX. 5/6 STM2DPFS30L STM2DPFS30L Information furnished is believed to be accurate and reliable. However, STMicroelect onics assumes no responsibil ity for the consequences r of use of such information nor for any infringement of patents or other rights of third partes which may result from its use. No license is i granted by implication or otherwise under any patent or patent rights of STMicroelectro nics. Specific ation mentioned in this publication are subjec t to change without notice. This publication supersedes and replaces all informaton previously supplied. STMicroelectronics products i are not authorized for use as critical components in life support devices or systems with express written approval of STMicroelectronics. out The ST logo is a trademark of STMicroelectronics © 1999 STMicroelectronics Printed in Italy All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japa - Malaysia - Malta - Morocco n Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. 6/6 http://www.st.com .