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STHV102FI Datasheet

Part Manufacturer Description PDF Type
STHV102FI Toshiba Power MOSFETs Cross Reference Guide Original

STHV102FI

Catalog Datasheet MFG & Type PDF Document Tags

STHV102

Abstract: STHV102FI STHV102 STHV102FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V DSS STHV102 STHV102FI s s s s s s s R DS( on) ID 1000 V 1000 V < 3.5 < 3.5 4.2 A 2.6 A TYPICAL RDS(on) = 3.1 AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW INPUT CAPACITANCE LOW GATE CHARGE APPLICATION ORIENTED CHARACTERIZATION 3 3 2 , Symbol Parameter Value STHV102 VD S V DG R V GS Unit STHV102FI Drain-source Voltage (V
STMicroelectronics
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transistor STHV102 ISOWATT218 STHV10 P025C STHV102/FI

STHV102

Abstract: STHV102 STHV102FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STHV102 STHV102FI s s s s s s s V DSS 1000 V 1000 V R DS( on) < 3.5 < 3.5 ID 4.2 A 2.6 A TYPICAL RDS(on) = 3.1 AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW INPUT CAPACITANCE LOW GATE CHARGE APPLICATION ORIENTED CHARACTERIZATION 3 2 1 3 2 1 TO-218 ISOWATT218 , Temperature Max. Operating Junction Temperature o o Value STHV102FI 1000 1000 ± 20 4.2 2.6 16 150 1.2 -65
STMicroelectronics
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sthv102

Abstract: transistor STHV102 *57 TYPE SGS-THOMSON iLiOM)iQ(£I STHV102 STHV102FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR V dss R DS(on) Id STHV102 STHV102FI 1000 V 1000 V < 3.5 a < 3.5 a 4.2 A 2.6 A . . . TYPICAL Ros(on) = 3.1 AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C LOW INPUT CAPACITANCE LOW GATE CHARGE APPLICATION ORIENTED CHARACTERIZATION , Symbol MAXIMUM RATINGS Parameter STHV102 Value STHV102FI Unit V ds V dgr V gs Id Id Id m (*) P
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OCR Scan
02/FI
Abstract: ¿57 SGS-THOMSON ¡m era©«® STHV102 STHV102FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYP E V dss STHV102 STHV102FI RDS(on) Id 1000 V 1000 V < 3 .5 Q. < 3 .5 Q. 4.2 A 2.6 A â  TYPICAL RDS(on) = 3.1 Q. . â  . . . . AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C LOW INPUT CAPACITANCE LOW GATE CHARGE APPLICATION ORIENTED CHARACTERIZATION APPLICATIONS . HIGH CURRENT, HIGH SPEED SWITCHING . SWITCH MODE -
OCR Scan
102FI

Schottky diode TO220 15A 1000V

Abstract: smd transistor c011 TEA2018A UC3842/3/4/5A-B L4990/D BUF405A BUF410A SGSF463 SGSIF463 STHV102FI SGSIF444 BYT12PI
STMicroelectronics
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ST90R50 Schottky diode TO220 15A 1000V smd transistor c011 diode matrix rom LM317 DIP PACK transistor SMD 5kw smd L272 ULN2003A ULN2064B ULN2068B ULN2074B L702N/A L6221AS

ste30na50

Abstract: STP3N60FI 4.3 2.9 STH6N100FI STHV102FI q D 2PAK I 2PAK q VDSS RDS(on) max (V) () 30
STMicroelectronics
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STN3NE06L STP15N25 STP4NB90 ste30na50 STP3N60FI STE45N50 STHV82 ste24n90 stk2n50 STN4NE03L STN4NE03 STN3NE06 STN2N10 STN2NE10L

STP3N60FI

Abstract: IRF540 complementary STHV82FI STHV102FI TM TM Max220 TM I-Max220 TM VDSS RDS(on) max (V) () 200 500 0.065
STMicroelectronics
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STP3020L STP4NB90FP STP6NA80FP IRF540 complementary IRF640 complementary ste38na50 IRF630 complementary STD1NB60 STP80NF03L-04 STP80NE03L-06 STP60NE03L-10 STP60NE03L-12 STP3015L STP40NE03L-20

ste30na50-DK

Abstract: ste30na50 STHV102FI STHV102 STP4N100FI STP3N100FI STP3N100 STE26NA90 STY16NA90 STU7NA90 STH7NA90FI STW7NA90
STMicroelectronics
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MAX247TM ISOWATT220 STE24NA100 STE15NA100 STU6NA100 STW7NA100 ste30na50-DK STE30NA50-DA stp20n10l STW26N25 stp45n10l stw75n06-14 220TM MAX220TM 218TM

STE30NA50-DK

Abstract: ISOWATT-220 -247 ISOWATT220 TO-220 Sales Type STE24NA100 STY15NA100 STE15NA100 STU6NA100 STW7NA100 STP4N100 STHV102FI
STMicroelectronics
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STP5NA90FI MTP3055EFI STD8N06L ISOWATT-220 to220 transistors irf640 STB30N10 STP2NA50FI STU6NA90 STW6NA90 STH5NA90FI STW5NA90 STP5NA90

std2n52

Abstract: stp3n60 STH5NA100FI STHV102 STHV102FI STP4N100 STP4NA100 STW5NA100 STP3N100 STP3N100FI STP3NA100 STP3NA100FI
STMicroelectronics
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STB80NE03L-06 STP60NE06-16 std2n52 stp3n60 STD12NE06 FTP5021-0 TO220 STB60NE03L-10 STB40NE03L-20 STD20NE03L STP22NE03L IRFZ40

STHV102

Abstract: SGS-THOMSON STHV102 STHV102FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STHV102 S TH V102FI V dss 1 00 0 V 1 00 0 V , R ds ( oh) 3 .5 Q 3 .5 n Id 4 .2 A 2 .6 A AVALANCHE RUGGEDNESS TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C LOW INPUT CAPACITANCE LOW GATE CHARGE LOW LEAKAGE CURRENT SPECIFIED AT MAXIMUM VOLTAGE . "DIPS" EDGE TERMINATION TO SUSTAIN HIGH VOLTAGE . APPLICATION ORIENTED CHARACTERIZATION . ISOLATED PACKAGE UL RECOGNIZED, ISOLATION TO 4000V DC
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OCR Scan
STHV102/F

IRF540 complementary

Abstract: IRFZ44N complementary STH7NA90FI STH7N90FI STH7N90 STH5N90 STH5NA90FI STH6N100 STH5NA100FI STHV102FI STHV102 STP80NE03L
STMicroelectronics
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IRFZ44N complementary TOSHIBA IRFZ44A datasheet STP2NA60 SSH6N80 rfp60n06 IRF3205 IR RFP6N50 RFD16N03LSM RFP15N05L RFP50N05 RFP15N05 RFP50N05L

TSD45N50V

Abstract: TSD200N05V STH75N06FI STH80N05 STH80N05FI STHV82 STHV82FI STHV102 STHV102FI STK2N50 STK2N60 STK2N80 STK3N50 STK4N40
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OCR Scan
TSD4M450V TSD33N50V TSD40N55V TSD45N50V TSD135N10V TSD150N10V TSD200N05V TSD180N10V IRF540 BUZ10 BUZ11 BUZ11A STP45N05LFI STP50N06 STP50N06FI

std2n52

Abstract: stp2na60 STH8N80 STH8N80FI STH8NA60 STH8NA80FI STH9N80 STH9N80FI STH9NA80FI STHV102 STHV102FI STHV82
STMicroelectronics
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STU16NB50I YTA630 STP19NB20 buz102 equivalent BUZ91 equivalent replacement for IRL2203N buz91a equivalent IRFP460 cross reference RFP60N06LE 2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154

TSD45N50V

Abstract: TSD40N55V 60 50 50 STH6N100FI STHV102FI STH7N90FI STH5N90FI STH4N90FI STH9N80FI STH8N80FI STHV82FI STH4N80FI
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OCR Scan
TSD14N100V TSD22N80V TSD18N80V TSD30N60V TSD40N50V TSD40N50DV TSD23N50V TSD160N05V TSD17N100V TSD17N95V

SSH6N80

Abstract: IRF640 equivalent STH9N80FI STH9NA80FI STHV102 STHV102FI STHV82 STHV82FI STK12N05L STK12N06L STK14N10 STK18N05L
STMicroelectronics
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YTAF630 IRF640 equivalent buz100 equivalent irf540 equivalent buz10 equivalent BUK444 equivalent 2SK2700 equivalent 2SK1155 2SK1156 2SK1157 2SK1158 2SK1159 2SK1160

TRANSISTOR BSP 0835

Abstract: C00100B COMP BT2 12V C1 47uF 16V Q1 2 x STHV102FI in parallel R1 SOURCE 5 4 47
STMicroelectronics
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TRANSISTOR BSP 0835 C00100B ST VIPER 22 sthv 100BSP 100B/BSP 200KHZ SO-10 100B/100BSP P013P

SSH6N80

Abstract: rfp60n06 STH7NA90FI STH8N80 STH8N80FI STH8NA80FI STH9N80 STH9N80FI STH9NA80FI STHV102 STHV102FI STHV82
STMicroelectronics
Original
2SK2717 BUK417-500AE SFP70N03 BUZ91A STMicroelectronics BUZ22 BUZ71 BUZ71A BUZ72A BUZ80A IRF520 IRF530

schematic diagram smps VIPer 50A

Abstract: sc1019 DRAIN OSC 13V BT1 0 to 20V + COMP BT2 12V C1 47uF 16V Q1 2 x STHV102FI in
STMicroelectronics
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schematic diagram smps VIPer 50A sc1019 VIPer 50A viper-50 smps viper50A VIPer50 50/SP 50A/ASP SO-10TM 50TM/50A

p023h

Abstract: PENTAWATT-HV STHV102FI in parallel R1 SOURCE 5 4 47 GENERATOR INPUT 500us PULSE U1 VIPer50B R2 1k
STMicroelectronics
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p023h PENTAWATT-HV ac bridg specification FC00040 FC-002 FC00150 50BSP 50B/BSP P095A VIPER50B/BSP

40mhz remote control transmitter circuit

Abstract: STV2102B TEA2018A UC3842/3/4/5A-B L4990/D BUF405A BUF410A SGSF463 SGSIF463 STHV102FI SGSIF444 BYT12PI
STMicroelectronics
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STV7778 STV2102B STV2116 STV2118A TDA8170 TDA9302H 40mhz remote control transmitter circuit SG3525 current mode control 40mhz remote control receiver circuit sg3525 circuit TDA820 TEA2130 TDA9102C TDA9103 STV2110B
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