NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
STGE50NB60HD STGY50NB60HD - Datasheet Archive
N-CHANNEL 50A - 600V - ISOTOP PowerMESHTM IGBT TYPE VCES IC 600 V STGY50NB60HD VCE(sat) < 2.8 V 50 A HIGH INPUT IMPEDANCE
STGE50NB60HD STGE50NB60HD N-CHANNEL 50A - 600V - ISOTOP PowerMESHTM IGBT TYPE VCES IC 600 V STGY50NB60HD STGY50NB60HD VCE(sat) < 2.8 V 50 A HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) LOW ON-VOLTAGE DROP (Vcesat) OFF LOSSES INCLUDE TAIL CURRENT LOW GATE CHARGE HIGH CURRENT CAPABILITY VERY HIGH FREQUENCY OPERATION CO-PACKAGED WITH TURBOSWITCHTM ANTIPARALLEL DIODE s s s s s s s DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESHTM IGBTs, with outstanding perfomances. The suffix "H" identifies a family optimized for high frequen-cy applications (up to 120kHz)in order to achieve very high switching performances (reduced tfall) mantaining a low voltage drop. (s) ct ISOTOP uc d s) t( ro P INTERNAL SCHEMATIC DIAGRAM te le so Ob - APPLICATIONS HIGH FREQUENCY MOTOR CONTROLS s SMPS AND PFC IN BOTH HARD SWITCH AND RESONANT TOPOLOGIES s du o Pr e let o ABSOLUTE MAXIMUM RATINGS Symbol Value Unit VCES Collector-Emitter Voltage (VGS = 0) 600 V VGE Gate-Emitter Voltage ± 20 V IC Collector Current (continuous) at TC = 25°C 100 A IC Collector Current (continuous) at TC = 100°C 50 A bs O ICM ( ) Parameter Tstg Tj Collector Current (pulsed) 400 A Total Dissipation at TC = 25°C 300 W Derating Factor PTOT 2.4 W/°C 65 to 150 °C 150 °C Storage Temperature Max. Operating Junction Temperature ( ) PULSE WIDTH LIMITED BY SAFE OPERATING AREA March 2003 1/8 STGE50NB60HD STGE50NB60HD THERMAL DATA Rthj-case Thermal Resistance Junction-case Max Rthj-amb Rthc-h 0.416 °C/W Thermal Resistance Junction-ambient Max 30 °C/W Thermal Resistance Case-heatsink Typ 0.1 °C/W ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol Parameter Test Conditions Min. Collectro-Emitter Breakdown Voltage IC = 250 µA, VGE = 0 ICES Collector cut-off (VGE = 0) Gate-Emitter Leakage Current (VCE = 0) Max. VCE = Max Rating, TC = 25 °C IGES Typ. VBR(CES) 600 V 250 1000 µA VGE = ± 20V , VCE = 0 ± 100 nA Parameter Test Conditions VGE(th) Gate Threshold Voltage VCE(sat) Collector-Emitter Saturation Voltage Min. VCE = VGE, IC = 250µA Typ. VGE = 15V, IC = 50 A od r Test Conditions so Forward Transconductance VCE = 25 V , IC = 50 A Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance Qg Qge Qgc Total Gate Charge Gate-Emitter Charge Gate-Collector Charge ICL Latching Current Min. VCE = 25V, f = 1 MHz, VGE = 0 Pr e let o (s) ct du o Typ. Max. 1.9 eP let Cies gfs 2.8 VGE = 15V, IC = 50 A, Tj =125°C Parameter Unit V V V Unit 22 S 4500 pF 450 Ob - pF 90 VCE = 480V, IC = 50 A, VGE = 15V Vclamp = 480 V Tj = 150°C , RG = 10 uc 5 2.3 s) t( Max. 3 DYNAMIC Symbol µA VCE = Max Rating, TC = 125 °C ON (1) Symbol Unit pF 260 28 15 nC nC nC 200 A SWITCHING ON Symbol bs td(on) O 2/8 tr (di/dt)on Eon Parameter Turn-on Delay Time Rise Time Turn-on Current Slope Turn-on Switching Losses Test Conditions VCC = 480 V, IC = 50 A RG = 10 , VGE = 15 V VCC= 480 V, IC = 50 A, RG=10 VGE = 15 V, Tj = 125°C Min. Typ. Max. Unit 20 ns 70 ns 350 950 A/µs µJ STGE50NB60HD STGE50NB60HD ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING OFF Symbol tc Parameter Test Conditions Min. Typ. Vcc = 480 V, IC = 50 A, RGE = 10 , VGE = 15 V Cross-over Time Max. Unit 166 ns 48 ns tr(Voff) Off Voltage Rise Time td(off) Delay Time 326 ns Fall Time 90 ns Turn-off Switching Loss 2.1 mJ 3 mJ 270 ns 75 ns ns tf Eoff(*) Ets tc Total Switching Loss Vcc = 480 V, IC = 50 A, RGE = 10 , VGE = 15 V Tj = 125 °C Cross-over Time tr(Voff) Off Voltage Rise Time td(off) Delay Time 340 Fall Time 200 ns Turn-off Switching Loss 2.9 mJ Total Switching Loss 3.85 tf Eoff(*) Ets uc d COLLECTOR-EMITTER DIODE Symbol Parameter Test Conditions eP let If Ifm Forward Current Forward Current pulsed Vf Forward On-Voltage If = 50 A If = 50 A , Tj = 125 °C Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current If = 50 A ,VR = 100 V, Tj =125°C, di/dt = 100A/µs trr Qrr Irrm Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by max. junction temperature. (*)Losses include Also the Tail (Jedec Standardization) (s) ct ro Min. so Ob - Typ. 1.65 2 135 500 7.5 s) t( mJ Max. Unit 50 400 A A 2 V V ns nC A du o Pr e let o bs O 3/8 STGE50NB60HD STGE50NB60HD Thermal Impedance Switching Off Safe Operating Area Output Characteristics Transfer Characteristics uc d te le (s) ct du o so Ob - Normalized Gate Threshold Voltage vs Temp. Pr e let o bs O 4/8 Transconductance ro P s) t( STGE50NB60HD STGE50NB60HD Collector-Emitter On Voltage vs Temperature Gate-Charge vs Gate-Emitter Voltage Capacitance Variations Normalized Break-down Voltage vs Temp. uc d te le (s) ct du o Total Switching losses vs Gate Resistance Pr e s) t( ro P so Ob - Total Switching losses vs Temperature let o bs O 5/8 STGE50NB60HD STGE50NB60HD Total Switching losses vs Ic Diode Forward Voltage uc d Fig. 1: Gate Charge test Circuit Fig. 2: Test Circuit For Inductive Load Switching te le (s) ct du o Pr e let o bs O 6/8 s) t( so Ob - ro P STGE50NB60HD STGE50NB60HD ISOTOP MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. A 11.8 12.2 0.466 0.480 B 8.9 9.1 0.350 0.358 C 1.95 2.05 0.076 0.080 D 0.75 0.85 0.029 0.033 E 12.6 12.8 0.496 0.503 F 25.15 25.5 0.990 1.003 G 31.5 31.7 1.240 1.248 H 4 J 4.1 4.3 0.161 K 14.9 15.1 0.586 L 30.1 30.3 1.185 M 37.8 38.2 1.488 N 4 O 7.8 1.503 0.322 D F B H Pr e 1.193 A du o N Pr od E (s) ct 0.307 so Ob - uc 0.594 te le 8.2 s) t( 0.169 0.157 O bs O MAX. 0.157 G let o TYP. J K C L M 7/8 STGE50NB60HD STGE50NB60HD uc d te le (s) ct s) t( ro P so Ob - du o Pr e let o Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. © The ST logo is a registered trademark of STMicroelectronics bs O © 2003 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. © http://www.st.com 8/8