STGE50NB60HD STTA2006 - Datasheet Archive

 

® N-CHANNEL 50A - 600V ISOTOP PowerMESHTM IGBT PRELIMINARY DATA T YPE V CES V CE(sat) IC STGE50NB60HD 600 V < 2.8 V 50 A s

 

STGE50NB60HD STGE50NB60HD ® N-CHANNEL 50A - 600V ISOTOP PowerMESHTM IGBT PRELIMINARY DATA T YPE V CES V CE(sat) IC STGE50NB60HD STGE50NB60HD 600 V < 2.8 V 50 A s s s s s s s HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) LOW ON-VOLTAGE DROP (VCESAT) LOW GATE CHARGE HIGH CURRENT CAPABILITY VERY HIGH FREQUENCY OPERATION OFF LOSSES INCLUDE TAIL CURRENT CO-PACKAGED WITH TURBOSWITCHTM ANTIPARALLEL DIODE ISOTOP DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESHTM IGBTs, with outstanding perfomances. The suffix "H" identifies a family optimized to achieve very low switching times for high frequency applications (