NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Part | Manufacturer | Description | Type | Ordering |
| STB50NE10 | STMicroelectronics | N-CHANNEL 100V - 0.021 ? - 50A - D2PAK STRIPFET |
9 pages, |
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| STB50NE10 | STMicroelectronics | N - CHANNEL 100V - 0.021Ohm - 50A - D 2 PAK STripFET POWER MOSFET |
8 pages, |
Original | |
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| STB50NE10 | STMicroelectronics | N-CHANNEL 100V - 0.021 ? - 50A - D2PAK STRIPFET POWER MOSFET |
9 pages, |
Original | |
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| STB50NE10 | STMicroelectronics | N-channel 100V - 0.021 Ohm - 50A - D2PAK STripFET Power MOSFET |
13 pages, |
Original | |
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| STB50NE10 | Toshiba | Power MOSFETs Cross Reference Guide |
67 pages, |
Original | |
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| STB50NE10L | STMicroelectronics | N - CHANNEL 100V - 0.020Ohm - 50A - D 2 PAK STripFET POWER MOSFET |
5 pages, |
Original | |
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| STB50NE10L | STMicroelectronics | N-Channel 100 V - 0.020 ohm - 50 A D2PAK STripFET Power MOSFET |
9 pages, |
Original | |
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| STB50NE10L | Toshiba | Power MOSFETs Cross Reference Guide |
67 pages, |
Original | |
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| STB50NE10LT4 | STMicroelectronics | N-Channel 100 V - 0.020 ohm - 50 A D2PAK STripFET Power MOSFET |
9 pages, |
Original | |
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| STB50NE10T4 | STMicroelectronics | N-CHANNEL 100V - 0.021 ? - 50A - D2PAK STRIPFET POWER MOSFET |
9 pages, |
Original | |
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| Catalog Datasheet Results | Type | Document Tags |
| Abstract: STB50NE10 N-CHANNEL 100V - 0.021 - 50A D2PAK STripFETTM POWER MOSFET TYPE s s s s s RDS(on) ID STB50NE10 s VDSS 100 V , 300A/us, VDD V(BR)DSS, T j TJMAX 1/9 STB50NE10 THERMAL DATA Rthj-case Rthj-amb Rthc-sink , VDS = 25V f = 1 MHz VGS = 0 4350 500 175 S 6000 675 238 pF pF pF STB50NE10 , width limited by safe operating area. Safe Operating Area Thermal Impedance 3/9 STB50NE10 ... | Original |
9 pages, |
STB50NE10 STB50NE10 abstract |
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| Abstract: STB50NE10 N-CHANNEL 100V - 0.021 - 50A D2PAK STripFETTM POWER MOSFET TYPE s s s s s RDS(on) ID STB50NE10 s VDSS 100 V , /dt 300A/us, VDD V(BR)DSS, Tj TJMAX 1/9 STB50NE10 THERMAL DATA Rthj-case Rthj-amb , Capacitance VDS = 25V f = 1 MHz VGS = 0 4350 500 175 S 6000 675 238 pF pF pF STB50NE10 , width limited by safe operating area. Safe Operating Area Thermal Impedance 3/9 STB50NE10 ... | Original |
9 pages, |
STB50NE10 STB50NE10 abstract |
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| Abstract: STB50NE10 ® N - CHANNEL 100V - 0.021 - 50A - D2PAK STripFETTM POWER MOSFET TYPE STB50NE10 , STB50NE10 THERMAL DATA R thj -case Rthj -amb R thc-sink Tl Thermal Resistance Junction-case Max , 35 4350 500 175 Max. Unit S 6000 675 238 pF pF pF STB50NE10 ELECTRICAL , Thermal Impedance 3/8 STB50NE10 Output Characteristics Transfer Characteristics , Variations 4/8 STB50NE10 Normalized Gate Threshold Voltage vs Temperature Normalized On ... | Original |
8 pages, |
STB50NE10 STB50NE10 abstract |
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| Abstract: STB50NE10 N-channel 100V - 0.021 - 50A - D2PAK STripFETTM Power MOSFET General features Type VDSS RDS(on) ID STB50NE10 100V , e let o Order codes bs O Part number STB50NE10T4 June 2006 Marking Package , STB50NE10 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . , ( STB50NE10 1 Electrical ratings Electrical ratings Table 1. Absolute maximum ratings Symbol ... | Original |
13 pages, |
STB50NE10T4 STB50NE10 JESD97 B50NE10 STB50NE10 abstract |
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| Abstract: STB50NE10 N-channel 100V - 0.021 - 50A - D2PAK STripFETTM Power MOSFET General features Type VDSS RDS(on) ID STB50NE10 100V , Switching application Order codes Part number STB50NE10T4 June 2006 Marking Package B50NE10 B50NE10 D Rev 5 2PAK Packaging Tape & reel 1/13 www.st.com 13 Contents STB50NE10 , . 8 STB50NE10 1 Electrical ratings Electrical ratings Table 1. Absolute maximum ... | Original |
13 pages, |
STB50NE10T4 STB50NE10 JESD97 B50N b50ne10 STB50NE10 abstract |
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| Abstract: HIGH INTENSITY DISCHARGE (H.I.D.) LAMPS 100V Power MOSFET: STB50NE10 4 High voltage (breakdown at 500V) power transistor. Switch selection: IGBT: STGD3NB60SD STGD3NB60SD Power MOSFET: STB9NB50 STB9NB50 DC/DC Converter 12V 70V 12V B.C.C. 450 Hz / 50% duty cicle Transformer + Clamping device B.B.D. I LAMP V LAMP Ballast Control Chip Ballast Bridge Driver System Architecture Twice the efficiency Longer life EPAS: ELECTRIC POWER ASSISTED STEERING EMC Filter CAN V Batt ... | Original |
7 pages, |
3 phase pwm generator motor power window dc rain sensor electronic application HID ELECTRONIC BALLAST 12v motor power window hall sensor dpak mosfet motor control DC 12v 3 phase MOSFET INVERTER motor gear box motor 12v inverter 12v 36v high power 12v dc motor igbt control inverter 3phase 220 volt STB50NE10 STGD3NB60SD STB50NE10 abstract |
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| Abstract: STB55NE06 STB55NE06 STB55NE06L STB55NE06L STB75NE75 STB75NE75 STB50NE08 STB50NE08 STB50NE10L STB50NE10 STB80NF10 STB80NF10 STB30N10 STB30N10 STB40NF10 STB40NF10 , MOSFET: STB50NE10 4 High voltage (breakdown at 500V) power transistor. Switch selection: IGBT ... | Original |
14 pages, |
12v hid ballast ic 12v dc soft start motor fan 12v dc motor igbt control motor electric cars hybrid VBG15NB37 vbg15n VBG10NB20 smart ignition igbt VBG15NB37 STB80NE03L-06 stw60ne10 STN2NE10L PWM generator for IGBT STP12PF06 STP80NF03L-04 STP12PF06 abstract |
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| Abstract: STB55NE06 STB55NE06 STB55NE06L STB55NE06L STB75NE75 STB75NE75 STB50NE08 STB50NE08 STB50NE10L STB50NE10 STB80NF10 STB80NF10 STB30N10 STB30N10 STB40NF10 STB40NF10 ... | Original |
7 pages, |
STN2NE10L STB80NF03L-04 N stp55ne06 STP60NE03L-10 STP60NE03L-12 vbg15nb VBG10NB20 stw60ne10 STS4DNF60L STP80NF03L-04 STP80NE03L-06 BUZ11 STP60NF03L std29nf03l STP12PF06 STP80NF03L-04 STP12PF06 abstract |
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| Abstract: 50.0 STB53N08 STB53N08 100 0.025 0.028 STB50NE10L © STB50NE10 © 50.0 50.0 STB45N10L STB45N10L ... | Original |
6 pages, |
STN2N10L STP55NE06FP STP5NA90 STP4NB90 stp4na40fi STP60NE08 STP15N25 STN4NE03L STN4NE03 STN3NE06L STN3NE06 STP5N80FI STN2NE10L STE45N50 datasheet abstract |
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| Abstract: STB55NE06L STB55NE06L STB75NE75 STB75NE75 © STB50NE08 STB50NE08 STB50NE10L STB50NE10 STB30N10 STB30N10 STB40NS15 STB40NS15 © STB19NB20 STB19NB20 STB10NB20 STB10NB20 ... | Original |
8 pages, |
IRF740FI STP3NB80FP stp60n06fi STD2NB80 STK2NA60 STP3020L IRFP350FI equivalent transistor STW9NA60 irf740 mosfet STP4NB90FP STE38N60 ste24n90 STP53N06 IRF630 complementary datasheet abstract |
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| Abstract | Saved from | Date Saved | File Size | Type | Download |
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| ST | N-CHANNEL 100V - 0.021 OHM - 50A - D2PAK STRIPFET POWER MOSFET STB50NE10 N Document Format and Raw Text Format STB50NE10 N - CHANNEL 100V - 0.021 W - 50A - D 2 PAK STrip (BR)DSS , T j 3 T JMAX TYPE V DSS R DS(on) I D STB50NE10 100 V f = 1 MHz V GS = 0 4350 500 175 6000 675 238 pF pF pF STB50NE10 2/8 ELECTRICAL CHARACTERISTICS Operating Area Thermal Impedance STB50NE10 3/8 Output Characteristics Transconductance Gate Charge vs Gate www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/6034-v2.htm |
STMicroelectronics | 14/06/1999 | 7.42 Kb | HTM | 6034-v2.htm |
| STB50NE10 N - CHANNEL 100V - 0.021 W - 50A - D 2 PAK STripFET ] POWER MOSFET n TYPICAL R DS R DS(on) I D STB50NE10 100 V 175 6000 675 238 pF pF pF STB50NE10 2/8 ELECTRICAL CHARACTERISTICS (continued ) Pulse width limited by safe operating area Safe Operating Area Thermal Impedance STB50NE10 3 Static Drain-source On Resistance Capacitance Variations STB50NE10 4/8 Normalized Gate Threshold www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/6034.htm |
STMicroelectronics | 20/10/2000 | 9.88 Kb | HTM | 6034.htm |
| ST | N-CHANNEL 100V - 0.021 OHM - 50A - D2PAK STRIPFET POWER MOSFET STB50NE10 N Document Format and Raw Text Format STB50NE10 N - CHANNEL 100V - 0.021 W - 50A - D 2 PAK STrip (BR)DSS , T j 3 T JMAX TYPE V DSS R DS(on) I D STB50NE10 100 V f = 1 MHz V GS = 0 4350 500 175 6000 675 238 pF pF pF STB50NE10 2/8 ELECTRICAL CHARACTERISTICS Operating Area Thermal Impedance STB50NE10 3/8 Output Characteristics Transconductance Gate Charge vs Gate www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/6034-v1.htm |
STMicroelectronics | 02/04/1999 | 7.45 Kb | HTM | 6034-v1.htm |
| STB50NE10 Document Format Size Document Number Date Update /12/1998 8 Raw Text Format STB50NE10 N - CHANNEL 100V - 0 TYPE V DSS R DS(on) I D STB50NE10 100 V = 25 V f = 1 MHz V GS = 0 4350 500 175 6000 675 238 pF pF pF STB50NE10 2 area Safe Operating Area Thermal Impedance STB50NE10 3/8 Output Characteristics www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/6034-v3.htm |
STMicroelectronics | 25/05/2000 | 9.28 Kb | HTM | 6034-v3.htm |
| ST | N-CHANNEL 100V - 0.020 OHM - 50A - D2PAK STRIPFET POWER MOSFET STB50NE10L N Document Format and Raw Text Format STB50NE10L N - CHANNEL 100V - 0.020 W - 50A - D 2 PAK STrip (BR)DSS , T j 3 T JMAX TYPE V DSS R DS(on) I D STB50NE10L 100 V Capacitance Reverse Transfer Capacitance V DS = 25 V f = 1 MHz V GS = 0 TBD TBD pF pF pF STB50NE10L 2 STB50NE10L 4/5 Information furnished is believed to be accurate and reliable. However www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/6036-v2.htm |
STMicroelectronics | 14/06/1999 | 6.74 Kb | HTM | 6036-v2.htm |
| ST | N-CHANNEL 100V - 0.020 OHM - 50A - D2PAK STRIPFET POWER MOSFET STB50NE10L N Document Format and Raw Text Format STB50NE10L N - CHANNEL 100V - 0.020 W - 50A - D 2 PAK STrip (BR)DSS , T j 3 T JMAX TYPE V DSS R DS(on) I D STB50NE10L 100 V Capacitance Reverse Transfer Capacitance V DS = 25 V f = 1 MHz V GS = 0 TBD TBD pF pF pF STB50NE10L 2 STB50NE10L 4/5 Information furnished is believed to be accurate and reliable. However www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/6036-v1.htm |
STMicroelectronics | 02/04/1999 | 6.77 Kb | HTM | 6036-v1.htm |
| STB50NE10L N - CHANNEL 100V - 0.020 W - 50A - D 2 PAK STripFET ] POWER MOSFET PRELIMINARY R DS(on) I D STB50NE10L 100 V Capacitance V DS = 25 V f = 1 MHz V GS = 0 TBD TBD pF pF pF STB50NE10L 2/5 ELECTRICAL STB50NE10L 3/5 DIM. mm inch MIN. TYP. MAX. MIN. TYP. MAX. A 4.3 4.6 0.169 0.181 A1 2.49 2.69 0 -263 (D 2 PAK) MECHANICAL DATA STB50NE10L 4/5 Information furnished is believed to be accurate www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/6036.htm |
STMicroelectronics | 20/10/2000 | 9.16 Kb | HTM | 6036.htm |
| Datasheet N-CHANNEL 100V - 0.020 OHM - 50A D2PAK STRIPFET POWER MOSFET STB50NE10L subject to change without notice. STB50NE10L N-CHANNEL 100V - 0.020 W - 50A D 2 PAK STrip -DC & DC-AC CONVERTERS n AUTOMOTIVE ENVIRONMENT TYPE V DSS R DS(on) I D STB50NE10L 100 V 175 5C INTERNAL SCHEMATIC DIAGRAM STB50NE10L 2/6 THERMAL DATA AVALANCHE CHARACTERISTICS test circuit, Figure 5) TBD ns nC A ELECTRICAL CHARACTERISTICS (continued) STB50NE10L 4 www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/6036-v3.htm |
STMicroelectronics | 30/11/2000 | 8.82 Kb | HTM | 6036-v3.htm |
| ST | N-CHANNEL 100V - 0.021 OHM - 50A - D2PAK STRIPFET POWER MOSFET Datasheet N-CHANNEL 100V - 0.021 OHM - 50A - D2PAK STRIPFET POWER MOSFET STB50NE10 Document Format Size Document Number Date Update Pages Portable Document Format 6034 11/12/1998 8 Raw Text Format www.datasheetarchive.com/files/stmicroelectronics/books/all/6034.htm |
STMicroelectronics | 25/05/2000 | 2.89 Kb | HTM | 6034.htm |
| ST | N-CHANNEL 100V - 0.020 OHM - 50A - D2PAK STRIPFET POWER MOSFET Datasheet N-CHANNEL 100V - 0.020 OHM - 50A - D2PAK STRIPFET POWER MOSFET STB50NE10L Document Format Size Document Number Date Update Pages Portable Document Format 6036 30/06/1998 5 Raw Text Format www.datasheetarchive.com/files/stmicroelectronics/books/all/6036.htm |
STMicroelectronics | 25/05/2000 | 2.9 Kb | HTM | 6036.htm |
| Fairchild Part | Orderable | Industry Part | Manufacturer | Type | Family | Description |
| FDB2532 | FDB2532 Buy | STB50NE10LT4 Buy | SGS-Thomson Microelectronics | Close | Power MOSFET | 150V N-Channel UltraFET Trench MOSFET |
| FDB2532 | FDB2532 Buy | STB50NE10T4 Buy | SGS-Thomson Microelectronics | Close | Power MOSFET | 150V N-Channel UltraFET Trench MOSFET |
| FDB3632 | FDB3632 Buy | STB50NE10LT4 Buy | SGS-Thomson Microelectronics | Close | Power MOSFET | 100V N-Channel PowerTrench MOSFET |
| FDB3632 | FDB3632 Buy | STB50NE10T4 Buy | SGS-Thomson Microelectronics | Close | Power MOSFET | 100V N-Channel PowerTrench MOSFET |
| FQB33N10 | FQB33N10 Buy | STB50NE10 Buy | STMicroelectronics | Close | Power MOSFET | 100V N-Channel QFET |
| FQB33N10 | FQB33N10TM Buy | STB50NE10LT4 Buy | SGS-Thomson Microelectronics | Close | Power MOSFET | 100V N-Channel QFET |
| FQB33N10 | FQB33N10TM Buy | STB50NE10T4 Buy | SGS-Thomson Microelectronics | Close | Power MOSFET | 100V N-Channel QFET |
| FQB33N10L | FQB33N10L Buy | STB50NE10LT4 Buy | SGS-Thomson Microelectronics | Close | Power MOSFET | 100V N-Channel Logic Level QFET |
| Infineon (Siemens) Part | Status | Industry Part | Manufacturer | Description |
| IPD25CN10NG Buy | STB50NE10 Buy | STMicroelectronics | N-Channel MOSFETs (20V...250V) |
| NXP Semiconductor / Philips Part | Industry Part | Manufacturer | Type | Comments |
| BUK9628-100A Buy | STB50NE10L Buy | STMicroelectronics | Close | |
| BUK9629-100B Buy | STB50NE10L Buy | STMicroelectronics | Close | |
| PHB45NQ10T Buy | STB50NE10L Buy | STMicroelectronics | Close |
| On Semiconductor Part | Industry Part | Manufacturer | Type |
| NTB6413ANG Buy | STB50NE10 Buy | STMicroelectronics | Close |
| NTB6413ANG Buy | STB50NE10L Buy | STMicroelectronics | Close |
| NTB6413ANT4G Buy | STB50NE10 Buy | STMicroelectronics | Close |
| NTB6413ANT4G Buy | STB50NE10L Buy | STMicroelectronics | Close |