STP4NC60A STP4NC60AFP STB4NC60A-1 4NC60A STP4NC60A/FP/STB4NC60A-1 P011C P011P5/E

STB4NC60A-1 N-CHANNEL 600V - 1.8 - 4.2A TO-220/TO-220FP/I2PAK PowerMeshTMII MOSFET TYPE VDSS ID 600V 600V 600V STP4NC60A

STP4NC60A STP4NC60A - STP4NC60AFP STP4NC60AFP STB4NC60A-1 STB4NC60A-1 N-CHANNEL 600V - 1.8 - 4.2A TO-220/TO-220FP/I2PAK PowerMeshTMII MOSFET TYPE VDSS ID 600V 600V 600V STP4NC60A STP4NC60A STP4NC60AFP STP4NC60AFP STB4NC60A-1 STB4NC60A-1 RDS(on) < 2 < 2 < 2 4.2A 4.2A 4.2A TYPICAL RDS(on) = 1.8 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED s s s s s 3 1 TO-220 DESCRIPTION The PowerMESHTMII is the evolution of the first generation of MESH OVERLAYTM. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVERS Symbol VGS bs 12 3 uc d (Tabless TO-220) s) t( ro P INTERNAL SCHEMATIC DIAGRAM te le Parameter Value STP(B)4NC60A 4NC60A(-1) Unit STP4NC60AFP STP4NC60AFP Drain-source Voltage (VGS = 0) 600 V Drain-gate Voltage (RGS = 20 k) 600 V let o VDGR ID Pr e TO-220FP so Ob - du o ABSOLUTE MAXIMUM RATINGS VDS (s) ct 2 Gate- source Voltage ±30 V IDM (q) PTOT dv/dt(1) 4.2 4.2(*) A Drain Current (continuos) at TC = 100°C 2.6 2.6(*) A Drain Current (pulsed) 16.8 16.8(*) A Total Dissipation at TC = 25°C 100 35 W Derating Factor O ID Drain Current (continuos) at TC = 25°C 0.8 0.28 W/°C Peak Diode Recovery voltage slope 3.5 3.5 V/ns - 2500 V VISO Insulation Withstand Voltage (DC) Tstg Storage Temperature Tj Max. Operating Junction Temperature (·)Pulse width limited by safe operating area (1)ISD 4.2A, di/dt 300A/µs, VDD V (BR)DSS, Tj T JMAX. July 2001 60 to 150 °C (*)Limited only by maximum Temperature allowed 1/10 STP4NC60A/FP/STB4NC60A-1 STP4NC60A/FP/STB4NC60A-1 THERMAL DATA TO-220/I2PAK TO-220FP 1.25 3.57 Rthj-case Thermal Resistance Junction-case Max Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W Maximum Lead Temperature For Soldering Purpose 300 °C Tl °C/W AVALANCHE CHARACTERISTICS Symbol Parameter Max Value Unit IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) 4.2 A EAS Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) 250 mJ ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol Parameter Test Conditions Drain-source Breakdown Voltage ID = 250 µA, VGS = 0 IDSS Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) VGS = ±30V Typ. Max. VDS = Max Rating IGSS Min. V(BR)DSS 600 ON (1) Pr te le Symbol VGS(th) RDS(on) Ob - Gate Threshold Voltage Static Drain-source On Resistance Min. VGS = 10V, ID =1.5 A Symbol Ciss Test Conditions VDS = VGS, ID = 250µA DYNAMIC gfs (1) so Parameter du Parameter ro P e (s) ct Forward Transconductance Input Capacitance let o Test Conditions VDS > ID(on) x RDS(on)max, ID = 2A VDS = 25V, f = 1 MHz, VGS = 0 2 s) t( V uc 1 VDS = Max Rating, TC = 125 °C Unit µA od 50 µA ±100 nA Typ. Max. Unit Min. 3 4 V 1.8 2 Typ. Max. Unit 3.7 S 475 pF Coss Output Capacitance 72 pF Crss Reverse Transfer Capacitance 10 pF bs O 2/10 STP4NC60A/FP/STB4NC60A-1 STP4NC60A/FP/STB4NC60A-1 ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON Symbol td(on) tr Parameter Test Conditions Rise Time Qgs Gate-Source Charge Max. Unit 14 Gate-Drain Charge ns 14 VDD = 480V, ID = 4A, VGS = 10V Total Gate Charge Qgd Typ. VDD = 300V, ID = 2A RG = 4.7 ,VGS = 10V (see test circuit, Figure 3) Turn-on Delay Time Qg Min. ns 16.5 21.1 nC 2.5 nC 9 nC SWITCHING OFF Symbol tr(Voff) Parameter Test Conditions tf Typ. VDD = 480V, ID = 4A, RG = 4.7, VGS = 10V (see test circuit, Figure 5) Off-voltage Rise Time ns 19 ns s) t( ns uc d SOURCE DRAIN DIODE ISD Unit 15 Cross-over Time Symbol Max. 24 Fall Time tc Min. Parameter Test Conditions Min. Typ. ro Source-drain Current ISDM (2) Forward On Voltage ISD = 4.2A, VGS = 0 trr Reverse Recovery Time Qrr Reverse Recovery Charge ISD = 4A, di/dt = 100A/µs, VDD = 100V, Tj = 150°C (see test circuit, Figure 5) IRRM Reverse Recovery Current eP let Source-drain Current (pulsed) VSD (1) Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. (s) ct Safe Operating Area for TO-220/I2PAK so Ob - Max. Unit 4.2 A 16.8 A 1.6 V 600 ns 2.7 µC 9 A Safe Operating Area for TO-220FP du o Pr e let o bs O 3/10 STP4NC60A/FP/STB4NC60A-1 STP4NC60A/FP/STB4NC60A-1 Thermal Impedance for TO-220/I2PAK Thermal Impedance for TO-220FP Output Characteristics Transfer Characteristics uc d te le (s) ct Transconductance Pr e du o let o bs O 4/10 ro P so Ob - Static Drain-source On Resistance s) t( STP4NC60A/FP/STB4NC60A-1 STP4NC60A/FP/STB4NC60A-1 Gate Charge vs Gate-source Voltage Capacitance Variations Normalized Gate Thereshold Voltage vs Temp. Normalized On Resistance vs Temperature uc d te le (s) ct s) t( ro P so Ob - du o Source-drain Diode Forward Characteristics Pr e let o bs O 5/10 STP4NC60A/FP/STB4NC60A-1 STP4NC60A/FP/STB4NC60A-1 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge test Circuit uc d te le (s) ct du o so Ob - Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times Pr e let o bs O 6/10 ro P s) t( STP4NC60A/FP/STB4NC60A-1 STP4NC60A/FP/STB4NC60A-1 TO-220 MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 D1 0.107 1.27 0.050 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.203 s) t( G1 2.4 2.7 0.094 0.106 H2 10.0 10.40 0.393 0.409 L2 16.4 14.0 0.511 2.65 2.95 0.104 L6 15.25 15.75 0.600 L7 6.2 6.6 0.244 L9 3.5 3.93 0.137 DIA. 3.75 3.85 0.147 te le ro P 0.620 0.260 0.154 0.151 E so Ob - 0.551 0.116 C D A 13.0 L5 D1 (s) ct L2 Pr e G G1 let o H2 F1 du o F Dia. F2 bs O uc d 0.645 L4 L5 L9 L7 L6 L4 P011C P011C 7/10 STP4NC60A/FP/STB4NC60A-1 STP4NC60A/FP/STB4NC60A-1 TO-220FP MECHANICAL DATA mm DIM. MIN. inch MAX. MIN. A 4.4 TYP. 4.6 0.173 TYP. MAX. 0.181 B 2.5 2.7 0.098 0.106 D 2.5 2.75 0.098 0.108 E 0.45 0.7 0.017 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.7 0.045 0.067 F2 1.15 1.7 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 0.409 28.6 30.6 1.126 L4 9.8 10.6 0.385 L6 15.9 16.4 0.626 L7 9 9.3 0.354 Ø 3 3.2 0.118 16 0.645 0.366 E 0.126 L6 L7 G G1 ¯ 1 2 3 L2 8/10 0.417 L3 F2 bs O so Ob - H let o ro P 1.204 F Pr e te le F1 B (s) ct du o uc d 0.630 A L3 D L2 L4 s) t( STP4NC60A/FP/STB4NC60A-1 STP4NC60A/FP/STB4NC60A-1 TO-262 (I2PAK) MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 4.4 4.6 0.173 0.181 A1 2.49 2.69 0.098 0.106 B 0.7 0.93 0.027 0.036 B2 1.14 1.7 0.044 0.067 C 0.45 0.6 0.017 0.023 C2 1.23 1.36 0.048 0.053 D 8.95 9.35 0.352 0.368 e 2.4 2.7 0.094 E 10 10.4 0.393 L 13.1 13.6 0.515 L1 3.48 3.78 0.137 0.149 L2 1.27 1.4 0.050 0.055 C2 0.409 0.531 E e B2 A1 C so Ob - Pr e bs O ro eP let du o let o 0.106 B A (s) ct uc d s) t( L1 L2 D L P011P5/E P011P5/E 9/10 STP4NC60A/FP/STB4NC60A-1 STP4NC60A/FP/STB4NC60A-1 uc d te le (s) ct s) t( ro P so Ob - du o Pr e let o Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics bs O © 2000 STMicroelectronics Printed in Italy All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 10/10