STB1277 STD1862 - Datasheet Archive

 

TO-92 Plastic-Encapsulate Transistors STB1277 TRANSISTOR (PNP) TO-92 FEATURES Audio power amplifier High current application High

 

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors STB1277 STB1277 TRANSISTOR (PNP) TO-92 FEATURES Audio power amplifier High current application High current : IC=-2A Complementary pair with STD1862 STD1862 1. EMITTER 2. COLLECTOR 3. BASE MAXIMUM RATINGS (TA=25 unless otherwise noted) 1 2 3 Symbol Parameter Value Units VCBO Collector-Base Voltage -30 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -2 A PC Collector Power Dissipation 625 mW TJ Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage VCBO IC= -100uA, IE=0 -30 V Collector-emitter breakdown voltage VCEO IC= -1mA , IB=0 -30 V Emitter-base breakdown voltage VEBO IE= -1mA, IC=0 -5 V Collector cut-off current ICBO VCB= -30 V, IE=0 -0.1 uA Emitter cut-off current IEBO VEB= -5V, IC=0 -0.1 uA DC current gain hFE VCE=-2V, IC= -500mA 100 320 Collector-emitter saturation voltage VCE(sat) IC=-2A, IB= -0.2A Base-emitter on voltage VBE(on) VCE=-2V, IC= -500mA fT VCE= -5V, IC= -50mA 170 MHz VCB=-10V,IE=0,f=1MHZ 48 pF Transition frequency Collector Output Capacitance Cob -0.8 -1 CLASSIFICATION hFE Rank Range O Y 100-200 160-320 V V Typical Characteristics STB1277 STB1277