ST2304 S04YA - Datasheet Archive

 

ST2304 2.5A DESCRIPTION The ST2304 is the N-Channel logic enhancement mode power field effect transistor are produced using high

 

N Channel Enchancement Mode MOSFET ST2304 ST2304 2.5A DESCRIPTION The ST2304 ST2304 is the N-Channel logic enhancement mode power field effect transistor are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other batter powered circuits, and low in-line power loss are needed in a very small outine surface mount package. PIN CONFIGURATION SOT-23-3L FEATURE 30V/2.5A, RDS(ON) = 70m-ohm @VGS = 10V 30V/2.0A, RDS(ON) = 105m-ohm @VGS = 4.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOT-23-3L package design 3 D G S 1 1.Gate 2 2.Source 3.Drain 3 S04YA S04YA 1 S: Subcontractor 2 Y: Year Code W: Process Code STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA TEL: (650) 9389294 FAX: (650) 9389295 Page 1 N Channel Enchancement Mode MOSFET ST2304 ST2304 2.5A ABSOULTE MAXIMUM RATINGS (Ta = 25 Unless otherwise noted ) Parameter Symbol Typical Unit Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS 20 V ID A IDM 2.5 2.0 10 A Continuous Source Current (Diode Conduction) IS 1.25 A Power Dissipation PD W TJ 1.25 0.8 150 Storgae Temperature Range TSTG -55/150 Thermal Resistance-Junction to Ambient RJA 100 Continuous Drain Current (TJ=150) TA=25 TA=70 Pulsed Drain Current TA=25 TA=70 Operation Junction Temperature /W STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA TEL: (650) 9389294 FAX: (650) 9389295 Page2 N Channel Enchancement Mode MOSFET ST2304 ST2304 2.5A ELECTRICAL CHARACTERISTICS ( Ta = 25 Unless otherwise noted ) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current Symbol Condition Min Typ Max Unit V(BR)DSS VGS=0V,ID=250uA 30 VGS(th) VDS=VGS,ID=250uA 1.0 IGSS VDS=0V,VGS=20V V 3.0 V 100 nA Drain-source On-Resistance RDS(on) Forward Transconductance gfs VDS=30V,VGS=1.0V VDS=30V,VGS=0V TJ=55 VDS4.5V,VGS=10V VDS4.5V,VGS=4.5V VGS=10V,ID=2.5A VGS=4.5V,ID=2.0A VDS=4.5V,ID=2.5V Diode Forward Voltage VSD IS=-1.25A,VGS=0V 0.77 1.2 Qg Qgs Qgd Ciss Coss Crss VDS=15V,VGS=4.5V ID2.5A 4.5 0.8 1.0 240 110 17 8 12 10 20 30 nS 17 8 35 20 Zero Gate Voltage Drain Current IDSS On-State Drain Current ID(on) 1 10 uA 6 4 A 0.055 0.07 0.08 0.105 4.6 S V Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time Turn-Off Time td(on) tr td(off) tf VDS=10V,VGS=0V F=1MHz VDD=15V,RL=15 ID=1.0A,VGEN=10V RG=6 nC pF STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA TEL: (650) 9389294 FAX: (650) 9389295 Page3 N Channel Enchancement Mode MOSFET ST2304 ST2304 2.5A SOT-23-3L PACKAGE OUTLINE STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA TEL: (650) 9389294 FAX: (650) 9389295 Page4 N Channel Enchancement Mode MOSFET ST2304 ST2304 2.5A TYPICAL CHARACTERICTICS (25 Unless noted) Page 5 N Channel Enchancement Mode MOSFET ST2304 ST2304 2.5A TYPICAL CHARACTERICTICS (25 Unless noted) Page 6