ST1802HI ISOWATT218 P025C - Datasheet Archive

® HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR s s s s s s NEW SERIES, ENHANCHED PERFORMANCE FULLY INSULATED PACKAGE FOR

ST1802HI ST1802HI ® HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR s s s s s s NEW SERIES, ENHANCHED PERFORMANCE FULLY INSULATED PACKAGE FOR EASY MOUNTING HIGH VOLTAGE CAPABILITY HIGH SWITCHING SPEED TIGTHER hfe CONTROL IMPROVED RUGGEDNESS APPLICATIONS: s HORIZONTAL DEFLECTION FOR COLOR TV 3 2 1 ISOWATT218 ISOWATT218 DESCRIPTION The device is manufactured using Diffused Collector Technology for more stable operation Vs base drive circuit variations resulting in very low worst case dissipation. INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Value Uni t V CBO Collector-Base Voltage (I E = 0) 1500 V V CEO Collector-Emitter Voltage (IB = 0) 600 V V EBO Emitter-Base Voltage (IC = 0) 7 V Collector Current 8 A IC I CM IB Parameter Collector Peak Current (tp < 5 ms) Base Current P t ot Total Dissipation at Tc = 25 o C T stg St orage Temperature Tj May 1999 Max. Operating Junction Temperature 15 A 4 A 50 W -65 to 150 o C 150 o C 1/6 ST1802HI ST1802HI THERMAL DATA R t hj-ca se Thermal Resistance Junction-case Max o 2.5 C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol I CES Parameter Test Cond ition s Min. Typ . Max. Un it 1 2 mA mA 1 mA Collector Cut-off Current (V BE = 0) V CE = 1500 V V CE = 1500 V Emitter Cut-off Current (I C = 0) V EB = 7 V V CEO(sus) Collector-Emitter Sustaining Voltage I C = 100 mA L = 25 mH V CE(sat ) Collector-Emitter Saturation Voltage IC = 4 A IC = 4 A IB = 0.8 A IB = 1.2 A 5 1.5 V V BE(s at) Base-Emitt er Saturation Voltage I C = 4.5 A IB = 1 A 1.2 V DC Current Gain IC = 1 A IC = 5 A V CE = 5 V V CE = 5 V IC = 4 A L B = 5 µH f = 16 KHz IBON(END) =1 A V BB = -2.5 V I EBO h F E ts tf INDUCTIVE LO AD Storage Time Fall Time o T j = 125 C 600 Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % Safe Operating Areas 2/6 Thermal Impedance V 25 4 9 5 0.3 6 0.5 µs µs ST1802HI ST1802HI Derating Curve Base Emitter Saturation Voltage Collector Emitter Saturation Voltage DC Current Gain Power Losses At 16 KHz Switching Time Inductive Load 3/6 ST1802HI ST1802HI Reverse Biased SOA Inductive Load Switching Test Circuits. 4/6 ST1802HI ST1802HI ISOWATT218 ISOWATT218 MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 5.35 5.65 0.210 0.222 C 3.3 3.8 0.130 0.149 D 2.9 3.1 0.114 0.122 D1 1.88 2.08 0.074 0.081 E 0.75 1 0.029 0.039 F 1.05 1.25 0.041 0.049 G 10.8 11.2 0.425 0.441 H 15.8 16.2 0.622 0.637 L1 20.8 21.2 0.818 0.834 L2 19.1 19.9 0.752 0.783 L3 22.8 23.6 0.897 0.929 L4 40.5 42.5 1.594 1.673 L5 4.85 5.25 0.190 0.206 L6 20.25 20.75 0.797 0.817 M 3.5 3.7 0.137 0.145 N 2.1 2.3 0.082 0.090 U 4.6 0.181 L3 C D1 D A E N L2 L6 F L5 H G U M 1 2 3 L1 L4 P025C P025C 5/6 ST1802HI ST1802HI Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics © 1999 STMicroelectronics Printed in Italy All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. http://www.st.com . 6/6