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LP395Z/LFT4 Texas Instruments Ultra Reliable Power Transistor 3-TO-92 ri Buy
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TIP117 Texas Instruments PnP Darlington - Connected Silicon Power Transistors 3-TO-220 ri Buy

ST Microelectronics Transistors

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Abstract: PLANAR NPN TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS , Cut- off Current (I E = 0) V EB = 3 V for ST ZT2222 ZT2222 for ST ZT2222A ZT2222A 30 15 nA nA Collector-Base Breakdown Voltage (IE = 0) I C = 10 µA for ST ZT2222 ZT2222 for ST ZT2222A ZT2222A 60 75 V V V (BR)CEO Collector-Emitter Breakdown Voltage (I B = 0) I C = 10 mA for ST ZT2222 ZT2222 for ST ZT2222A ZT2222A 30 40 V V Emitter-Base Breakdown Voltage (I C = 0) I E = 10 µA for ST ZT2222 ZT2222 for ST ... Original
datasheet

5 pages,
46.75 Kb

STZT2907A STZT2907 STZT2222A STZT2222 T2222A ZT2222 ST Microelectronics Transistors T2222 ZT2222A STZT2222 abstract
datasheet frame
Abstract: PLANAR NPN TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS GENERAL , Temperature 160 140 6 0.6 1.5 -65 to 150 150 Value ST ZT5551 ZT5551 180 160 V V V A W o o Un it C C 1/4 , 4 V I C = 100 µ A for ST ZT5550 ZT5550 for ST ZT5551 ZT5551 I C = 1 mA for ST ZT5550 ZT5550 for ST ZT5551 ZT5551 I C = 10 µA for , mA for ST ZT5550 ZT5550 for ST ZT5551 ZT5551 I C = 10 mA I B = 1 mA I C = 50 mA I B = 5 mA for ST ZT5550 ZT5550 for ST ZT5551 ZT5551 for ST ZT5550 ZT5550 I C = 1 mA V CE I C = 10 mA V CE I C = 50 mA V CE for ST ZT5551 ZT5551 V CE I C = 1 mA I C ... Original
datasheet

4 pages,
38.45 Kb

ZT5551 ZT5550 STZT5550 STZT5551 STZT5550 abstract
datasheet frame
Abstract: PLANAR PNP TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS GENERAL , Temperature -130 -120 -5 -0.6 -1.5 -65 to 150 150 Value ST ZT5401 ZT5401 -180 -160 V V V A W o o Un it C C 1/4 , = -3 V I C = -100 µ A for ST ZT5400 ZT5400 for ST ZT5401 ZT5401 I C = -1 mA for ST ZT5400 ZT5400 for ST ZT5401 ZT5401 I C = -10 µ A for ST ZT5400 ZT5400 for ST ZT5401 ZT5401 Min . T yp. Max. -100 -50 -50 Unit nA nA nA -130 -160 -120 -150 , Gain V CE(sat) V BE(sat ) h FE I C = -10 mA I C = -50 mA I C = -10 mA I C = -50 mA for ST ZT5400 ZT5400 ... Original
datasheet

4 pages,
38.01 Kb

T5400 STZT5400 STZT5401 STZT5400 abstract
datasheet frame
Abstract: PLANAR NPN TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS , -10 mA for ST ZT2907 ZT2907 for ST ZT2907A ZT2907A -40 -60 V V -5 V V ( BR)CBO V (BR)CEO , Current Gain I C = -0.1 mA V CE for ST ZT2907 ZT2907 for ST ZT2907A ZT2907A V CE I C = -1 mA for ST ZT2907 ZT2907 for ST ZT2907A ZT2907A V CE I C = -10 mA for ST ZT2907 ZT2907 for ST ZT2907A ZT2907A I C = -150 mA VCE I C = -500 mA VCE for ST ZT2907 ZT2907 for ST ZT2907A ZT2907A h FE = -10 V 35 75 = -10 V 50 100 = -10 V 75 100 100 = ... Original
datasheet

4 pages,
40.11 Kb

STZT2907A ST Microelectronics Transistors STZT2222 STZT2907 STZT2222A ZT2907 T2907 st 2222A ZT2907A T2907A STZT2907 abstract
datasheet frame
Abstract: BCW31/32 BCW31/32 SMALL SIGNAL NPN TRANSISTORS Type BCW 31 BCW 32 s Marking D1 D2 s s SILICON EPITAXIAL PLANAR NPN TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS LOW , Collector Peak Current Total Dissipation at T c = 25 C St orage Temperature Max. Operating Junction , furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no , under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this ... Original
datasheet

4 pages,
35.95 Kb

BCW31/32 BCW31/32 abstract
datasheet frame
Abstract: BCW69 BCW69 BCW70 BCW70 SMALL SIGNAL PNP TRANSISTORS Type BCW 69 s s H1 BCW 70 s Marking H2 SILICON EPITAXIAL PLANAR PNP TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN , Total Dissipation at T c = 25 C 300 mW T stg St orage Temperature IC Tj March 1996 , believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for , any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this ... Original
datasheet

4 pages,
36.92 Kb

BCW70 BCW69 Marking H2 hj sot-23 transistors marking HJ ST Microelectronics Transistors BCW69 abstract
datasheet frame
Abstract: BC141 BC141 GENERAL PURPOSE TRANSISTORS DESCRIPTION The BC141 BC141 is a silicon planar epitaxial NPN transistors in Jedec TO-39 metal case. They are particularly designed for audio amplifiers and switching , Total Dissipation at T amb 45 C o at T case 45 C T stg St orage Temperature Tj Max. , reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of , SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without ... Original
datasheet

5 pages,
57.54 Kb

sgs bc141 BC161 BC141 equivalent BC141 BC141 abstract
datasheet frame
Abstract: BC161 BC161 GENERAL PURPOSE TRANSISTORS DESCRIPTION The BC161 BC161 is a silicon planar epitaxial PNP transistors in Jedec TO-39 metal case. They are particularly designed for audio amplifiers and switching , Total Dissipation at T amb 45 C o at T case 45 C T stg St orage Temperature Tj Max. , furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no , otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in ... Original
datasheet

5 pages,
58.6 Kb

BC141 BC161 BC161 abstract
datasheet frame
Abstract: TIP110/112 TIP110/112 TIP115/117 TIP115/117 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS s s s s , s 1 DESCRIPTION The TIP110 TIP110 and TIP112 TIP112 are silicon epitaxial-base NPN transistors in , T amb 25 o C 50 2 W W T st g Storage Temperature IC I CM IB Tj Max. , Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes , implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications ... Original
datasheet

6 pages,
82.96 Kb

TIP115 tip110 st TIP110 ST Microelectronics Transistors 117 IC TIP117 TIP112 TIP110/112 TIP115/117 TIP110/112 abstract
datasheet frame
Abstract: TIP31A/31C TIP31A/31C TIP32A/32B/32C TIP32A/32B/32C COMPLEMENTARY SILICON POWER TRANSISTORS s SGS-THOMSON PREFERRED , and TIP31C TIP31C are silicon epitaxial-base NPN transistors in Jedec TO-220 plastic package, intented , tot Total Dissipation at T case 25 o C T amb 25 o C 40 2 W W T st g Storage , and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of , of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change ... Original
datasheet

5 pages,
74.16 Kb

malaysia tip32c TIP32B SGS TIP 32 TIP31c PNP Transistor TIP32C TIP32A TIP-31A ST Microelectronics Transistors TIP31A morocco tip32c TIP31C morocco tip31c TIP31A/31C TIP32A/32B/32C TIP31A/31C abstract
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Datasheet Content (non pdf)

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Over 1.1 million files (1986-2014): html articles, reference designs, gerber files, chemical content, spice models, programs, code, pricing, images, circuits, parametric data, RoHS data, cross references, pcns, military data, and more. Please note that due to their age, these files do not always format correctly in modern browsers. Disclaimer.
 
without express written approval of ST Microelectonics. { 1994 SGS-THOMSON Microelectronics - All Rights SD1855 SD1855 SD1855 SD1855 GENERAL PURPOSE LINEAR APPLICATIONS RF & MICROWAVE TRANSISTORS Document PURPOSE LINEAR APPLICATIONS RF & MICROWAVE TRANSISTORS .230 2LFL (M151) hermetically sealed . 2.0 GHz . 20 and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/2854-v1.htm
STMicroelectronics 02/04/1999 3.65 Kb HTM 2854-v1.htm
without express written approval of ST Microelectonics. { 1994 SGS-THOMSON Microelectronics - All Rights SD1855 SD1855 SD1855 SD1855 GENERAL PURPOSE LINEAR APPLICATIONS RF & MICROWAVE TRANSISTORS Document PURPOSE LINEAR APPLICATIONS RF & MICROWAVE TRANSISTORS .230 2LFL (M151) hermetically sealed . 2.0 GHz . 20 and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/2854-v2.htm
STMicroelectronics 14/06/1999 3.61 Kb HTM 2854-v2.htm
: Maria Grazia Prestini SGS-THOMSON Microelectronics St. Genis Pouilly (France) Phone: +33 4 5040 New expansion inaugurated at Casablanca by SGS-THOMSON Microelectronics - The increased presence of SGS-THOMSON Microelectronics in Casablanca was formally recognized 10,000 Clean Room. This is used to produce SCRs, triacs, diodes, power transistors, voltage regulators, micromodules for smartcards and radio frequency transistors and modules. Welcoming all the
www.datasheetarchive.com/files/stmicroelectronics/stonline/press/news/year1997/c733h.htm
STMicroelectronics 20/10/2000 4.3 Kb HTM c733h.htm
SGS-THOMSON, please contact : Maria Grazia Prestini SGS-THOMSON Microelectronics St. Genis Pouilly New expansion inaugurated at Casablanca by SGS-THOMSON Microelectronics The increased presence of SGS-THOMSON Microelectronics in Casablanca was formally recognized today produce SCRs, triacs, diodes, power transistors, voltage regulators, micromodules for smartcards and radio frequency transistors and modules. Welcoming all the Guests to the inauguration ceremony, Mr. Pistorio said
www.datasheetarchive.com/files/stmicroelectronics/stonline/press/news/year1997/c733h-v1.htm
STMicroelectronics 31/05/2000 4.24 Kb HTM c733h-v1.htm
SGS-THOMSON, please contact : Maria Grazia Prestini SGS-THOMSON Microelectronics St. Genis Pouilly New expansion inaugurated at Casablanca by SGS-THOMSON Microelectronics The increased presence of SGS-THOMSON Microelectronics in Casablanca was formally recognized today produce SCRs, triacs, diodes, power transistors, voltage regulators, micromodules for smartcards and radio frequency transistors and modules. Welcoming all the Guests to the inauguration ceremony, Mr. Pistorio said
www.datasheetarchive.com/files/stmicroelectronics/stonline/press/news/c733h-v1.htm
STMicroelectronics 14/06/1999 4.21 Kb HTM c733h-v1.htm
implication or otherwise under any patent or patent rights of ST Microelectronics. Specifications and replaces all information previously supplied. ST Microelectronics products are not authorized SD2922 SD2922 SD2922 SD2922 RF AND MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETS Document Number signal applications up to 200 MHz. RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETS PRODUCT which is currently under development by ST. The design criteria and specifications of this item could
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/4847-v1.htm
STMicroelectronics 02/04/1999 3.95 Kb HTM 4847-v1.htm
Document Format and Raw Text Format 2N5681 2N5681 2N5681 2N5681 2N5682 2N5682 2N5682 2N5682 SILICON NPN TRANSISTORS n ST PREFERRED express written approval of ST Microelectonics. { 1997 SGS-THOMSON Microelectronics - Printed in Italy - 2N5681 2N5681 2N5681 2N5681 2N5682 2N5682 2N5682 2N5682 SILICON NPN TRANSISTORS Document Number: 4092 Date Update The 2N5681 2N5681 2N5681 2N5681, 2N5682 2N5682 2N5682 2N5682 are high voltage silicon epitaxial planar NPN transistors in Jedec TO-39 metal case intended for use as drivers for high power transistors in general purpose, amplifier
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/4092-v1.htm
STMicroelectronics 02/04/1999 4.78 Kb HTM 4092-v1.htm
Document Format and Raw Text Format 2N5681 2N5681 2N5681 2N5681 2N5682 2N5682 2N5682 2N5682 SILICON NPN TRANSISTORS n ST PREFERRED express written approval of ST Microelectonics. { 1997 SGS-THOMSON Microelectronics - Printed in Italy - 2N5681 2N5681 2N5681 2N5681 2N5682 2N5682 2N5682 2N5682 SILICON NPN TRANSISTORS Document Number: 4092 Date Update The 2N5681 2N5681 2N5681 2N5681, 2N5682 2N5682 2N5682 2N5682 are high voltage silicon epitaxial planar NPN transistors in Jedec TO-39 metal case intended for use as drivers for high power transistors in general purpose, amplifier
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/4092-v2.htm
STMicroelectronics 14/06/1999 4.75 Kb HTM 4092-v2.htm
CONCLUSION Use ST sensitive triacs driven by an ST microcontrollers and remove the buffer transistors. This show how to connect an ST triac and an ST microcontroller. I - CONVENTIONAL SOLUTION For many years the static dv/dt, and the commutation. II - NEW ST SOLUTION Two parameters have been improved : - The microcontroller is now able to drive one standard triac or several sensitive triacs, without buffer transistors furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3580-v1.htm
STMicroelectronics 02/04/1999 5.13 Kb HTM 3580-v1.htm
CONCLUSION Use ST sensitive triacs driven by an ST microcontrollers and remove the buffer transistors. This show how to connect an ST triac and an ST microcontroller. I - CONVENTIONAL SOLUTION For many years the static dv/dt, and the commutation. II - NEW ST SOLUTION Two parameters have been improved : - The microcontroller is now able to drive one standard triac or several sensitive triacs, without buffer transistors furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3580-v2.htm
STMicroelectronics 14/06/1999 5.09 Kb HTM 3580-v2.htm