SSM8958 - Datasheet Archive

Dual Enhancement Mode MOSFET Product Summary (N-Channel) VDS (V) ID (A) 30V 6A 8 RDS(ON) (m) Max SO-8 7 6 5 30 @VGS = 10V 1 2 60

SSM8958 SSM8958 Dual Enhancement Mode MOSFET Product Summary (N-Channel) VDS (V) ID (A) 30V 6A 8 RDS(ON) (m) Max SO-8 7 6 5 30 @VGS = 10V 1 2 60 @VGS = 4.5V 3 4 D1 (7,8) D2 (5,6) Product Summary (P-Channel) VDS (V) ID (A) RDS(ON) (m) Max G1 (2) G2 (4) 60 @VGS = - 10V - 30V - 4.5A S2 (3) S1 (1) 100 @VGS = - 4.5V o ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise noted) Parameter Symbol N-Channel P-Channel Limited Limited Drain-Source Voltage VDS 30 -30 Gate-Source Voltage VGS + 25 - + 20 - ID 6 -4.5 IDM 25 -23 IS 1.7 Unit -1.7 o Drain Current-Continuous @ TJ = 25 C -Pulsed b Drain-Source Diode Forward Current Maximum Power Dissipation a a PD A W 2.0 TJ, TSTG Operating Junction and Storage Temperature Range V -55 to 150 o C THERMAL CHARACTERISTICS THERMAL CHRACTERISTICS Thermal Resistance, Junction-to-Ambient a R JA 62.5 o C/W South Sea Semiconductor reserves the right to make changes to improve reliability or manufacturability without advance notice. South Sea Semiconductor, January 2008 (Rev 1.0) 1 SSM8958 SSM8958 o N-Channel Electrical Characteristics (TA = 25 C unless otherwise noted) -Channel c Typ Parameter Symbol Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS VDS=24V, VGS=0V 1 Gate-Body Leakage IGSS VGS= 100 nA 2.5 V Gate Threshold Voltage Drain-Source On-State Resistance VGS(th) Min Condition VGS=0V, ID=250 A 30 A 1 1.7 VGS=10V, ID=6A 30 VGS=4.5V, ID=5A RDS(ON) Unit V 20V, VDS=0V VDS=VGS ID=250 Max 60 15 On-State Drain Current ID(ON) VDS=5V, VGS=10V Forward Transconductance gFS VDS=5V, ID=6A Input Capacitance CISS VDS=15V COSS VGS=0V 120 Reverse Transfer Capacitance CRSS f=1.0MHz 80 Turn-On Delay Time tD(ON) VDD=15V, 16 ID=1A, 7 tD(OFF) VGS=10V, 22 tf RGEN=10 m 750 Output Capacitance A Rise Time Turn-Off Delay Time Fall Time tr Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Diode Forward Voltage , A S 9 PF ns 10 VDS=15V, ID=1A, VGS=10V 12 VDS=15V, ID=1A, VGS=4.5V 6.5 VSD VGS=0V, ID=1.7A 0.7 nC 2.5 Qgd VDS=15V, ID=1A, VGS=10V 2 1.2 Notes a. Surface Mounted on FR4 Board, t