SSM6P36FE - Datasheet Archive

 

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM6P36FE Power Management Switches Ron = 3.60 (max) (@VGS = -1.5 V)

 

SSM6P36FE SSM6P36FE TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM6P36FE SSM6P36FE Power Management Switches Ron = 3.60 (max) (@VGS = -1.5 V) Ron = 2.70 (max) (@VGS = -1.8 V) Ron = 1.60 (max) (@VGS = -2.8 V) Ron = 1.31 (max) (@VGS = -4.5 V) Unit: mm 1.6±0.05 1.2±0.05 Symbol -20 V 2 5 4 V VGSS ±8 ID -330 Pulse IDP -660 PD (Note1) 150 mW Tch 150 °C 1.Source1 4.Source2 °C 2.Gate1 5.Gate2 3.Drain2 6.Drain1 Drain power dissipation Channel temperature Storage temperature range mA -55 to 150 Tstg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Total rating Mounted on an FR4 board (25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 0.135 mm2 × 6) Marking ES6 0.12±0.05 Drain current JEDEC JEITA TOSHIBA 2-2N1D Weight: 3.0 mg (typ.) Equivalent Circuit (top view) 5 4 6 PX 1 6 DC Gate-source voltage 6 1 3 Unit VDSS Drain-source voltage Rating 1.0±0.05 0.5 0.5 Characteristics 1.6±0.05 Absolute Maximum Ratings (Ta = 25 °C) (Common to the Q1, Q2) 0.2±0.05 1.5-V drive Low ON-resistance: 0.55±0.05 · · 2 5 4 Q1 Q2 3 1 2 3 Handling Precaution When handling individual devices (which are not yet mounted on a circuit board), ensure that the environment is protected against static electricity. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials. Usage Considerations Let Vth be the voltage applied between gate and source that causes the drain current (ID) to below (-1 mA for the SSM6P36FE SSM6P36FE). Then, for normal switching operation, VGS(on) must be higher than Vth, and VGS(off) must be lower than Vth. This relationship can be expressed as: VGS(off) < Vth < VGS(on). Take this into consideration when using the device. 1 2008-06-05 SSM6P36FE SSM6P36FE Electrical Characteristics (Ta = 25°C) (Q1, Q2 Common) Characteristics Symbol Drain-source breakdown voltage Test Conditions Min Typ. Max V (BR) DSS ID = -1 mA, VGS = 0 V -20 V (BR) DSX ID = -1 mA, VGS = 8 V -12 Unit V Drain cutoff current IDSS VDS = -16 V, VGS = 0 V -10 A Gate leakage current IGSS VGS = ±8 V, VDS = 0 V ±1 A Gate threshold voltage Vth VDS = -3 V, ID = -1 mA -0.3 -1.0 V Forward transfer admittance |Yfs| VDS = -3 V, ID = -100mA (Note2) 190 mS ID = -100mA, VGS = -4.5 V (Note2) 0.95 1.31 ID = -80mA, VGS = -2.8 V (Note2) 1.22 1.60 ID = -40mA, VGS = -1.8 V (Note2) 1.80 2.70 ID = -30mA, VGS = -1.5 V (Note2) 2.23 3.60 43 10.3 6.1 1.2 0.85 0.35 Drain-source ON-resistance RDS (ON) Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Switching time VDS = -10 V, VGS = 0 V, f = 1 MHz VDS = -10 V, IDS= -330mA VGS = -4 V Turn-on time ton VDD = -10 V, ID = -100mA 90 toff VGS = 0 to -2.5 V, RG = 50 200 0.88 nC pF Turn-off time 1.2 Drain-source forward voltage VDSF ID =330mA, VGS = 0 V (Note2) ns V Note2: Pulse test Switching Time Test Circuit (a) Test circuit 0 OUT (b) VIN 0V 10% IN RG -2.5V 10 s VDD 90% -2.5 V RL (c) VOUT VDD = -10 V Duty 1% VIN: tr, tf < 5 ns (Zout = 50 ) Common Source Ta = 25°C VDS (ON) 90% 10% VDD tr ton 2 tf toff 2008-06-05 SSM6P36FE SSM6P36FE ID ­ VDS -8V -2.8V -4.5V -2.5V (mA) Common Source Ta = 25 °C -500 Common Source VDS = -3 V -100 -10 Ta = 100 °C -1.8 V -400 -300 Drain current Drain current ID (mA) -600 ID ­ VGS -1000 ID -700 -1.5 V -200 VGS=-1.2 V -100 0 0 -0.5 -1.0 Drain-source voltage 25 °C - 25 °C -0.1 -0.01 0 -1.5 VDS -1 -1.0 (V) Gate-source voltage RDS (ON) ­ VGS VGS (V) RDS (ON) ­ ID 5 5 ID =-100mA Common Source Ta = 25°C Common Source Ta = 25°C 4 Drain-source ON-resistance RDS (ON) () Drain-source ON-resistance RDS (ON) () -2.0 3 2 25 °C Ta = 100 °C 1 4 3 -1.5 V -1.8 V 2 -2.8 V 1 VGS = -4.5 V - 25 °C 0 0 -2 -4 -6 Gate-source voltage VGS 0 -8 0 (V) -100 -200 RDS (ON) ­ Ta -500 ID -600 -700 (mA) Vth ­ Ta -1.0 4 -40mA / -1.8 V -30mA / -1.5V 3 -80mA / -2.8 V 2 1 ID = -100mA / VGS = -4.5 V 0 Common Source Vth (V) Common Source Gate threshold voltage Drain-source ON-resistance RDS (ON) () -400 Drain current 5 0 -50 -300 50 Ambient temperature 100 Ta VDS = -3 V ID = -1 mA -0.5 0 -50 150 (°C) 0 50 Ambient temperature 3 100 Ta 150 (°C) 2008-06-05 IDR ­ VDS |Yfs| ­ ID 1000 1000 Common Source VGS = 0 V (mA) Common Source VDS = -3 V Ta = 25°C Yfs Forward transfer admittance 100 30 10 -100 -10 -1 Drain current ID S Ta =100 °C 25 °C 1 -25 °C 0.1 0 -1000 0.4 0.2 (mA) 0.8 0.6 Drain-source voltage VDS (V) VDD = -10 V VGS = 0 to -2.5 V Ta = 25 °C RG = 50 (ns) C 1.2 Common Source Ciss 30 1.0 t ­ ID 10000 50 (pF) IDR G 10 C ­ VDS 100 1000 toff t Capacitance 100 IDR 300 D Drain reverse current (mS) SSM6P36FE SSM6P36FE Coss Crss 5 Common Source Ta = 25°C f = 1 MHz VGS = 0 V 3 1 -0.1 -1 -10 Drain-source voltage tf Switching time 10 100 ton tr 10 -100 VDS -1 (mW) (V) Mounted on FR4 board. (25.4mm × 25.4mm × 1.6mm , Cu Pad : 0.135 mm2 × 6) P D* VDD =-10V VDD = - 16 V -2 0 (mA) 200 Ta = 25°C -6 Drain power dissipation VGS Gate-source voltage ID = -0.33 A 0 ID -1000 PD* ­ Ta 250 Common Source -4 -100 Drain current Dynamic Input Characteristic -8 -10 (V) 1 Total Gate Charge 2 Qg 150 100 150 0 -40 3 -20 *:Total Rating (nC) 4 0 20 40 60 80 Ambient temperature 100 120 Ta 140 160 (°C) 2008-06-05 SSM6P36FE SSM6P36FE RESTRICTIONS ON PRODUCT USE · Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively "Product") without notice. · This document and any information herein may not be reproduced without prior written permission from TOSHIBA. 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