NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Part | Manufacturer | Description | Type | Ordering |
| SSM3J304T | Toshiba | Field-Effect Transistor Silicon P-Channel MOS Type Power Management Switch Applications High-Speed Switching Applications |
6 pages, |
Original |  |
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| Catalog Datasheet Results | Type | Document Tags |
| Abstract: SSM3J304T TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM3J304T Power , (Note 2) m pF ns V Note 2: Pulse test 1 2006-10-12 SSM3J304T Switching Time Test , devices should be made of antistatic materials. 2 2006-10-12 SSM3J304T ID - VGS ID - VDS , Temperature Ta ( ) Drain Current ID (A) 3 2006-10-12 SSM3J304T |Yfs| - ID IDR - VDS 10 , Total Gate Charge 12 Qg 14 16 (nC) 4 2006-10-12 SSM3J304T rth PD Ta ... | Original |
6 pages, |
SSM3J304T 16t marking SSM3J304T abstract |
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| Abstract: SSM3J304T PMOS SSM3J304T : mm · · 1.8V Ron = 297m (max) (@VGS = -1.8 V , VDSF ID = 2.3 A, VGS = 0 ( 2) m pF nC ns V 2: 1 2007-11-01 SSM3J304T , 2007-11-01 SSM3J304T ID - VGS ID - VDS -5 -10 -4 VDS = -3V ID (A) Ta = 25 , Ta ( ) ID(A) 3 2007-11-01 SSM3J304T |Yfs| - ID IDR - VDS 10 10 VDS = -3V Ta , 2 4 6 8 10 12 Qg (nC) 14 16 4 2007-11-01 SSM3J304T rth ... | Original |
6 pages, |
SSM3J304T SSM3J304T abstract |
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| Abstract: SSM3J304T TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM3J304T Power , ) m pF ns V Note 2: Pulse test 1 2007-11-01 SSM3J304T Switching Time Test Circuit , with devices should be made of antistatic materials. 2 2007-11-01 SSM3J304T ID - VGS ID , 150 Ambient Temperature Ta ( ) Drain Current ID (A) 3 2007-11-01 SSM3J304T |Yfs| - , 10 Total Gate Charge 12 Qg 14 16 (nC) 4 2007-11-01 SSM3J304T rth PD ... | Original |
6 pages, |
SSM3J304T SSM3J304T abstract |
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| Abstract: SSM3J304T TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM3J304T Power , 1 2010-01-26 SSM3J304T Electrical Characteristics (Ta = 25°C) Characteristic Symbol , made of antistatic materials. 2 2010-01-26 SSM3J304T ID - VGS ID - VDS -5 -10 -10 , 2010-01-26 SSM3J304T |Yfs| - ID IDR - VDS 10 10 Common Source Common Source VDS = -3 V , 12 Qg 14 16 (nC) 4 2010-01-26 SSM3J304T rth PD Ta tw 1000 b ... | Original |
6 pages, |
SSM3J304T SSM3J304T abstract |
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| Abstract: SSM3J304T TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM3J304T Power , ) m pF ns V Note 2: Pulse test 1 2007-11-01 SSM3J304T Switching Time Test Circuit , with devices should be made of antistatic materials. 2 2007-11-01 SSM3J304T ID - VGS ID , 150 Ambient Temperature Ta ( ) Drain Current ID (A) 3 2007-11-01 SSM3J304T |Yfs| - , 10 Total Gate Charge 12 Qg 14 16 (nC) 4 2007-11-01 SSM3J304T rth PD ... | Original |
6 pages, |
SSM3J304T SSM3J304T abstract |
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| Abstract: Si7820DN Si7820DN SN7002N SN7002N SSM3J304T SSM3J313T SSM3J313T SSM3K01T SSM3K01T SSM3K02T SSM3K02T SSM3K03FE SSM3K03FE SSM3K04FE SSM3K04FE SSM3K04FS SSM3K04FS SSM3K04FU SSM3K04FU ... | Original |
4 pages, |
BSH202 FDC796N PMGD280UN AO3400 NDS0605 2n7002 nxp NTR2101PT1G nxp Cross-reference pmn50xp FDT461N BSH108 PMV60EN BSS123 NXP BSH103 PMV65XP datasheet abstract |
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| Abstract: MARKING S3H SOT363 ) 2SK3658 2SK3658 (0.3) SSM6K407TU SSM6K407TU(0.44) SM6K32TU SM6K32TU(0.044) SSM3J110TU SSM3J110TU(0.094) SSM3J304T(0.127) 1.9 2SJ610 2SJ610 , product: SSM3J130TU SSM3J130TU Typical product: SSM3K15F SSM3K15F Typical product: SSM3J304T 1.6 Thickness: 2.9 0.7 ... | Original |
63 pages, |
tk6a65d TJ20A10M3 tk10a60d equivalent TPC8A04-H TK40A08K3 TPC8037 TPCA*8025 TPCA8019-H TPC8107 TPC8121 TPC8A03 TK18A50D TPC8037-H TK80A08K3 datasheet abstract |
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| Abstract: TPCS8007-H TPCS8007-H (0.45) SSM3J117TU SSM3J117TU (0.225) SSM3K127TU SSM3K127TU (0.123) SSM6J402TU SSM6J402TU (0.225) SSM3J304T (0.127) 1.9 , : SSM3J304T 1.6 : 2.9 0.7 typ. : SSM4K27CT SSM4K27CT : SSM5N15FE SSM5N15FE 1.5 1.6 1.2 1. 1. : 0.55 ... | Original |
67 pages, |
TPCA8077-H SSM3K7002BF TK13A65D TPCC8061-H TK12A50D TPC8A03 TPC8037 2SK3569 equivalent tk80A08K3 tk6a65d equivalent SSM6J501NU S2M -214AC toshiba TK50E06K3A TPCA8057-H datasheet abstract |
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| Abstract: (0.094) SSM3J304T (0.127) 1.9 2SJ610 2SJ610 (2.55) SSM3K116TU SSM3K116TU (0.1) SSM3J115TU SSM3J115TU (0.098) SSM3K101TU SSM3K101TU , Super-mini, 5-pin : SSM3J130TU SSM3J130TU : SSM3K15F SSM3K15F : SSM3J304T 1.6 : 2.9 0.7 typ. : SSM4K27CT SSM4K27CT , ) SSM3J313T SSM3J313T 2.0 0.7 U-MOSV SSM3J317T SSM3J317T 2.0 0.65 U-MOSII 22.1(@4.5V) 1100 SSM3J304T ... | Original |
63 pages, |
TK10A60D SSM6K208FE SSM3J132TU TPC8037 2SK2679 TPC8118 TPCA*8023 2sk3568 SSM3K02T SSM3J326T 2sj200 ssm3j16fs TPC8119 TPC8121 datasheet abstract |
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| Abstract: (0.3) 2SK3658 2SK3658 (0.3) SSM6K407TU SSM6K407TU (0.44) SSM6K32TU SSM6K32TU (0.44) SSM3J304T (0.127) 1.9 2SJ610 2SJ610 (2.55 , product: SSM3J130TU SSM3J130TU Typical product: SSM3K15F SSM3K15F Typical product: SSM3J304T 1.6 Thickness: 2.9 0.7 ... | Original |
67 pages, |
tk10a60d equivalent TK12A65D TK13A65D TK5A tk6a65d equivalent 2SK3911 equivalent SSM6J501NU TPCA8028 TPCA*8057 SSM3J132TU TK25E06K3 TPCA8057-H TJ9A10M3 TPCA*8030 datasheet abstract |
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| Fairchild Part | Orderable | Industry Part | Manufacturer | Type | Family | Description |
| FDN352AP | FDN352AP Buy | SSM3J304T Buy | Toshiba | Close | Power MOSFET | -30V Single P-Channel, Trench MOSFET |
| NDS332P | NDS332P Buy | SSM3J304T Buy | Toshiba | Close | Power MOSFET | P-Channel Logic Level Enhancement Mode Field Effect Transistor |
| On Semiconductor Part | Industry Part | Manufacturer | Type |
| NTR1P02T1G Buy | SSM3J304T Buy | Toshiba | Close |