SSM2308 - Datasheet Archive

3A, 60V,RDS(ON) 160m Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product SOT-223

SSM2308 SSM2308 3A, 60V,RDS(ON) 160m Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product SOT-223 Description The SSM2308 SSM2308 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The SSM2308 SSM2308 is universally used for all commercialindustrial surface mount applications. Features * Simple Drive Requirement * Small Package Outline REF. D Date Code A C D E I H 2 3 0 8 G G D S Millimeter Min. Max. 6.70 7.30 2.90 3.10 0.02 0.10 0° 10° 0.60 0.80 0.25 0.35 REF. B J 1 2 3 4 5 Millimeter Min. Max. 13°TYP. 2.30 REF. 6.30 6.70 6.30 6.70 3.30 3.70 3.30 3.70 1.40 1.80 S Absolute Maximum Ratings Parameter Symbol Unit VDS V 3.0 A 2.3 A 10 A 2.7 W 0.02 Continuous Drain Current, VGS @4.5V ±20 IDM 3 V ID@TA=70 C Gate-Source Voltage 60 VGS Drain-Source Voltage W / oC ID@TA=25 oC 3 o Continuous Drain Current, VGS @4.5V Pulsed Drain Current Ratings 1,2 o PD@TA=25 C Total Power Dissipation Linear Derating Factor Tj, Tstg Operating Junction and Storage Temperature Range o C -55~+150 Thermal Data Parameter Thermal Resistance Junction-ambient http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Symbol 3 Max. Rthj-a Ratings 45 Unit o C/W Any changing of specification will not be informed individual Page 1 of 4 SSM2308 SSM2308 3A, 60V,RDS(ON) 160m Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FET o Electrical Characteristics( Tj=25 C Unless otherwise specified) Parameter Symbol BVDS/ Tj _ 1.0 _ 3.0 V _ _ ±100 nA VGS=±20V _ _ 10 uA VDS=60V,VGS=0 _ _ 25 uA VDS=48V,VGS=0 _ Gate-Source Leakage Current _ IGSS Gate Threshold Voltage 60 VGS(th) Breakdown Voltage Temp. Coefficient Typ. BVDSS Drain-Source Breakdown Voltage Min. _ o Drain-Source Leakage Current (Tj=25 C ) o Drain-Source Leakage Current(Tj=70 C ) Static Drain-Source On-Resistance IDSS RD S (O N ) _ Gate-Drain ("Miller") Charge Qgd _ Td(ON) _ Tr _ Td(Off) _ Tf _ Ciss 160 o m 10 Qgs Input Capacitance V/ C 6 Gate-Source Charge Fall Time _ 220 _ Turn-off Delay Time V _ Qg Rise Time Unit _ _ Total Gate Charge2 Turn-on Delay Time2 0.05 Max. _ _ 1.6 _ 3 _ 16 _ 3 nC _ 5 VGS=0V, ID=250uA o Reference to 25 C, ID=1mA VDS=VGS, ID=250uA VGS=10V, ID=2A VGS=4.5V, ID=1.7A _ 6 Test Condition ID=3A VDS=48V VGS= 4.5V _ 490 Output Capacitance Coss Reverse Transfer Capacitance Crss _ 40 Forward Transconductance Gfs _ 5 55 VDD=30V ID=1A nS VGS=10V RG=3.3 RD=30 780 _ pF VGS=0V VDS=25V S VDS=5V, ID=3A f=1.0MHz _ _ Source-Drain Diode Parameter Symbol Min. Typ. Max. Forward On Voltage 2 VSD _ _ Reverse Recovery Time Trr _ 25 _ 26 _ Reverse Recovery Change Q rr _ 1.2 Unit Test Condition V IS=1.2A, VGS=0V. nS IS=3A, VGS=0V. nC dl/dt=100A/us Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width300us, dutycycle2%. 2 o 3.Surface mounted on 1 in copper pad of FR4 board;120 C/W when mounted on min. copper pad. http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 2 of 4 SSM2308 SSM2308 Elektronische Bauelemente 3A, 60V,RDS(ON) 160m N-Channel Enhancement Mode Power Mos.FET Characteristics Curve Fig 1. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 5. Forward Characteristics of Reverse Diode http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Fig 2. Typical Output Characteristics Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 6. Gate Threshold Voltage v.s. Junction Temperature Any changing of specification will not be informed individual Page 3 of 4 SSM2308 SSM2308 Elektronische Bauelemente Fig 7. Gate Charge Characteristics 3A, 60V,RDS(ON) 160m N-Channel Enhancement Mode Power Mos.FET Fig 8. Typical Capacitance Characteristics 120 Fig 9. Maximum Safe Operating Area Fig 11. Switching Time Waveform http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A /W Fig 10. Effective Transient Thermal Impedance Fig 12. Gate Charge Waveform Any changing of specification will not be informed individual Page 4 of 4