SSH7N80A - Datasheet Archive

 

Advanced Power MOSFET FEATURES BVDSS = 800 V Avalanche Rugged Technology RDS(on) = 1.8 Rugged Gate Oxide Technology Lower Input

 

SSH7N80A SSH7N80A Advanced Power MOSFET FEATURES BVDSS = 800 V Avalanche Rugged Technology RDS(on) = 1.8 Rugged Gate Oxide Technology Lower Input Capacitance ID = 7 A Improved Gate Charge Extended Safe Operating Area TO-3P Lower Leakage Current : 25 µA (Max.) @ VDS = 800V Low RDS(ON) : 1.472 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS Characteristic Value 800 Drain-to-Source Voltage ID 1 O Single Pulsed Avalanche Energy IAR Avalanche Current EAR Repetitive Avalanche Energy dv/dt Peak Diode Recovery dv/dt V mJ 7 O 1 O 1 O 3 O 2 A 523 Gate-to-Source Voltage EAS 28 + 30 _ VGS A 20 mJ 2.0 V/ns Total Power Dissipation (TC=25 C) 200 W Linear Derating Factor 1.59 W/ C TL A 4.4 Continuous Drain Current (TC=100 C) Drain Current-Pulsed TJ , TSTG V 7 Continuous Drain Current (TC=25 C) IDM PD Units Operating Junction and - 55 to +150 Storage Temperature Range Maximum Lead Temp. for Soldering C 300 Purposes, 1/8" from case for 5-seconds Thermal Resistance Symbol Characteristic Typ. Max. R JC Junction-to-Case - 0.63 R CS Case-to-Sink 0.24 - R JA Junction-to-Ambient - Units 40 C/W Rev. B ©1999 Fairchild Semiconductor Corporation N-CHANNEL POWER MOSFET SSH7N80A SSH7N80A Electrical Characteristics (TC=25 C unless otherwise specified) Symbol Characteristic BVDSS Drain-Source Breakdown Voltage BV/TJ Breakdown Voltage Temp. Coeff. VGS(th) IGSS IDSS RDS(on) Min. Typ. Max. Units - 800 - V 0.93 - 2.0 Gate Threshold Voltage - V/ C - 3.5 V Test Condition VGS=0V,ID=250µA ID=250µA VDS=5V,ID=250µA VGS=30V Gate-Source Leakage , Forward - - 100 Gate-Source Leakage , Reverse - - -100 - - 25 - - 250 - - 1.8 VGS=10V,ID=0.85A 4 O* - VDS=50V,ID=0.85A 4 O Drain-to-Source Leakage Current Static Drain-Source On-State Resistance gfs Forward Transconductance - 4.95 Ciss Input Capacitance - Coss Output Capacitance - 140 165 Crss Reverse Transfer Capacitance - 57 Turn-On Delay Time - 23 55 Rise Time - 40 90 Turn-Off Delay Time - 92 195 Fall Time - 34 80 Qg Total Gate Charge - 67 88 Qgs Gate-Source Charge - 11.2 - Qgd Gate-Drain("Miller") Charge - 29.6 µA - VGS=-30V VDS=800V VDS=640V,TC=125 C 66 td(on) nA 1500 1950 tr td(off) tf See Fig 7 pF VGS=0V,VDS=25V,f =1MHz See Fig 5 VDD=400V,ID=2A, ns RG=16 See Fig 13 4 5 OO VDS=640V,VGS=10V, nC ID=2A See Fig 6 & Fig 12 4 5 OO Source-Drain Diode Ratings and Characteristics Symbol Characteristic IS Continuous Source Current ISM Pulsed-Source Current VSD Diode Forward Voltage trr Qrr Min. Typ. Max. Units 7 Test Condition - - - - 28 - - 1.4 V TJ=25 C,IS=7A,VGS=0V Reverse Recovery Time - 520 - ns TJ=25 C,IF=7A Reverse Recovery Charge - 6.66 - µC diF/dt=100A/µs 1 O 4 O A Notes ; 1 O Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature 2 L=20mH, I =7A, V =50V, R =27, Starting T =25 C O AS DD G J 3 _ _ _ O ISD < 7A, di/dt