SSFP8N25 - Datasheet Archive

 

StarMOST Power MOSFET Extremely high dv/dt capability Low Gate Charge Qg results in VDSS = 250V Simple Drive Requirement ID25 =

 

SSFP8N25 SSFP8N25 StarMOST Power MOSFET Extremely high dv/dt capability Low Gate Charge Qg results in VDSS = 250V Simple Drive Requirement ID25 = 8.1A 100% avalanche tested Gate charge minimized Very low intrinsic capacitances Very good manufacturing repeatability RDS(ON) = 0.45 Description StarMOS is a new generation of high voltage N­Channel enhancement mode power MOSFETs. This new technology minimises the JFET effect, increases packing density and reduces the on-resistance. StarMOS also achieves faster switching speeds through optimised gate layout Pin1­Gate with planar stripe DMOS technology. Pin2­Drain Pin1­Source Application Switching application Absolute Maximum Ratings Parameter Max. ID@Tc=25 C Continuous Drain Current,VGS@10V 8.1 ID@Tc=100C Continuous Drain Current,VGS@10V 5.1 IDM Pulsed Drain Current 32 PD@TC=25C Power Dissipation Units A 74 W Linear Derating Factor 0.59 W/ C VGS Gate-to-Source Voltage ±30 V EAS Single Pulse Avalanche Energy 205 mJ IAR Avalanche Current 8.1 A EAR Repetitive Avalanche Energy 7.4 mJ dv/dt Peak Diode Recovery dv/dt 4.8 V/ns TJ TSTG Operating Junction and Storage Temperature Range ­55 to +150 C 300(1.6mm from case) Soldering Temperature, for 10 seconds 10 Ibf in(1.1N m) Mounting Torque,6-32 or M3 screw Thermal Resistance Parameter Min. Typ. Max. RJC Junction-to-case - - 1.69 RCS Case-to-Sink,Flat,Greased Surface - 0.50 - RJA Junction-to-Ambient - - Units 62.5 C/W 1 SSFP8N25 SSFP8N25 StarMOST Power MOSFET Electrical Characteristics @TJ=25 C(unless otherwise specified) Parameter Min. Typ. 250 - - V(BR)DSS/TJ Breakdown Voltage Temp.Coefficient - 0.29 - RDS(on) Static Drain-to-Source On-resistance - - 0.45 VGS=10V,ID=4.05A VGS(th) Gate Threshold Voltage 2.0 - 4.0 V VDS=VGS,ID=250A gfs Forward Transconductance - 6.1 - S VDS=40V,ID=4.05A IDSS Drain-to-Source Leakage current - - 10 - - 100 Gate-to-Source Forward leakage - - 100 Gate-to-Source Reverse leakage - - -100 Qg Total Gate Charge - 30 40 Qgs Gate-to-Source charge - 5.8 - Qgd Gate-to-Drain("Miller") charge - 13.5 - td(on) Turn-on Delay Time - 13 40 tr Rise Time - 14 40 td(off) Turn-Off Delay Time - 53 120 tf Fall Time - 21 50 V(BR)DSS IGSS Drain-to-Source Breakdown Voltage Max. Units LD Internal Drain Inductance - 4.5 - LS Internal Source Inductance - 7.5 - Ciss Input Capacitance - 335 430 Coss Output Capacitance - 55 65 Crss Reverse Transfer Capacitance - 23 28 V Test Conditions VGS=0V,ID=250A V/C Reference to 25C,ID=250A A nA VDS=250V,VGS=0V VDS=200V,VGS=0V,TJ=150C VGS=30V VGS=-30V ID=8.1A nC VDS=200V VGS=10V VDD=125V ID=8.1A nS RG=12 Between lead, 6mm(0.25in.) nH from package and center of die contact VGS=0V pF VDS=25V f=1.0MHZ Source-Drain Ratings and Characteristics Parameter Min. IS Continuous Source Current (Body Diode) ISM - 8.1 Units Test Conditions A . VSD Max. - . Pulsed Source Current (Body Diode) Typ. MOSFET symbol showing the integral reverse p-n junction diode. - - 32 Diode Forward Voltage - - 1.5 V TJ=25C,IS=8.1A,VGS=0V trr Reverse Recovery Time - 190 - nS Qrr Reverse Recovery Charge - 1.28 - C TJ=25C,IF=8.1A di/dt=100A/s ton Forward Turn-on Time Intrinsic turn-on time is negligible (turn-on is dominated by Ls + LD) Notes: Repetitive rating;pulse width limited by max.junction temperature(see figure 11) L = 5mH, IAS = 8.1 A, VDD = 50V, ISD8.1A,di/dt210A/S,VDDV(BR)DSS, TJ25 C Pulse width300S; duty cycle2% RG = 27, Starting TJ = 25°C 2