SSD9973A - Datasheet Archive

 

N-Ch Enhancement Mode Power MOSFET 14A, 60V, RDS(ON) 115 m m Elektronische Bauelemente RoHS Compliant Product A suffix of

 

SSD9973A SSD9973A N-Ch Enhancement Mode Power MOSFET 14A, 60V, RDS(ON) 115 m m Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen free DESCRIPTION The SSD9973A SSD9973A utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The TO-252 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. TO-252(D-Pack) FEATURES Simple Drive Requirement Super High Density Cell Design for Extremely Low RDS(ON) A B MARKING CODE : C D D GE D K Data Code 9973A M HF N O P J G G D S S REF. A B C D E F G H Millimeter Min. Max. 6.4 6.8 5.20 5.50 2.20 2.40 0.45 0.55 6.8 7.2 2.40 3.00 5.40 5.80 0.8 1.20 REF. J K M N O P Millimeter Min. Max. 2.30 REF. 0.70 0.90 0.50 0.70 0.9 1.5 0 0.15 0.43 0.58 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ±20 V Continuous Drain Current, VGS=10V ID @TC=25 14 A Continuous Drain Current, VGS=10V ID @TC=100 9 A IDM 40 A PD @TC=25 27 W 0.22 W/° C -55 ~ +150 ° C 1 Pulsed Drain Current Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range TJ, TSTG THERMAL DATA Thermal Resistance Junction-Case Max. RJC 4.5 ° /W C Thermal Resistance Junction-Ambient Max. RJA 110 ° /W C 09-Nov-2009 Rev. A Page 1 of 4 SSD9973A SSD9973A N-Ch Enhancement Mode Power MOSFET 14A, 60V, RDS(ON) 115 m m Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) SYMBOL MIN. TYP. Drain-Source Breakdown Voltage BVDSS 60 - Gate Threshold Voltage VGS(th) 0.5 Forward Transconductance gfs - Gate-Source Leakage Current IGSS PARAMETER MAX. UNIT TEST CONDITIONS VGS=0, ID= 250µA 1.5 V VDS=VGS, ID= 250µA 15 - S VDS= 15V, ID= 9A - - ±100 - - 1 uA - - 25 uA VDS= 48V, VGS= 0 - 115 RDS(ON) m - 2 nA VGS= ±20V IDSS Drain-Source Leakage Current (TJ=150° C) Static Drain-Source On-Resistance V - Drain-Source Leakage Current (TJ=25°C) - - Qg - 15 - Gate-Source Charge Qgs - 2.5 - Gate-Drain ("Miller") Change Qgd - 2.6 - Td(on) - 10 - Tr - 15 - Td(off) - 25 - Tf - 12 - Input Capacitance Ciss - 675 - Output Capacitance Coss - 80 - Reverse Transfer Capacitance Crss - 40 VGS= 10V, ID= 9A VGS= 4.5V, ID= 6A 125 Total Gate Charge VDS= 60V, VGS= 0 - 2 Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time ID= 9 A nC VDS= 30 V VGS= 10 V VDD=30 V ID= 9 A ns VGS= 10 V R G= 1 RL=8.8 VGS=0 V pF VDS=15 V f=1.0 MHz SOURCE-DRAIN DIODE 2 Forward On Voltage VSD - - 1.3 V IS=14 A, VGS=0 V, Notes: 1. Pulse width limited by maximum junction temperature. 2. Pulse width 300µs, duty cycle 2%. 09-Nov-2009 Rev. A Page 2 of 4 SSD9973A SSD9973A Elektronische Bauelemente N-Ch Enhancement Mode Power MOSFET 14A, 60V, RDS(ON) 115 m m CHARACTERISTIC CURVES 09-Nov-2009 Rev. A Page 3 of 4 SSD9973A SSD9973A Elektronische Bauelemente N-Ch Enhancement Mode Power MOSFET 14A, 60V, RDS(ON) 115 m m CHARACTERISTIC CURVES 09-Nov-2009 Rev. A Page 4 of 4