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Part Manufacturer Description Datasheet BUY
6116LA120TDB Integrated Device Technology Inc Standard SRAM, 2KX8, 120ns, CMOS, CDIP24, 0.300 INCH, CERAMIC, DIP-24 visit Digikey Buy
6116LA90DB Integrated Device Technology Inc Standard SRAM, 2KX8, 90ns, CMOS, CDIP24, 0.600 INCH, CERAMIC, DIP-24 visit Digikey Buy
6116SA120TDB Integrated Device Technology Inc Standard SRAM, 2KX8, 120ns, CMOS, CDIP24, 0.300 INCH, CERAMIC, DIP-24 visit Digikey Buy
6116LA25TDB Integrated Device Technology Inc Standard SRAM, 2KX8, 25ns, CMOS, CDIP24, 0.300 INCH, CERAMIC, DIP-24 visit Digikey Buy
6116LA150DB Integrated Device Technology Inc Standard SRAM, 2KX8, 150ns, CMOS, CDIP24, 0.600 INCH, CERAMIC, DIP-24 visit Digikey Buy
6116SA90DB Integrated Device Technology Inc Standard SRAM, 2KX8, 90ns, CMOS, CDIP24, 0.600 INCH, CERAMIC, DIP-24 visit Digikey Buy

SRAM+6116

Catalog Datasheet MFG & Type PDF Document Tags

6116 RAM

Abstract: ic 6116 2016/6116/9128 2K x 8 SRAM Page 1 of 5 2016/6116/9128 - 2048x8 bit Static RAM Description The 2016/6116 series of Static RAMs are 16,384 bit memories organized as 2,048 words by 8 bits and , the 6116 and compatibles are built from CMOS technology. All provide three state outputs, are TTL , 9/14/2003 2016/6116/9128 2K x 8 SRAM , ://www.lami.pucpr.br/~afonso/Datasheet/2016.html 9/14/2003 2016/6116/9128 2K x 8 SRAM Page 3 of 5 Used In
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ss 9509

Abstract: 71B74 71B74 9418 B-3 SOJ-28 2 A 116/1 6116 9414 C-3 PDIP-24 2 D 116/0 6116 9426 C-3 PDIP-24 2 D 9428 C-3 PDIP-20 2 D 71589 9423 C , 1995 DYNAMIC HIGH TEMPERATURE LIFE (DHTL) Device Calendar 71B229 71B74 71B74 71B74 6116 6116 , B-4 71B74 9450 B-4 6116 9446 C-3 6116 9449 C-3 6116 9452 C-3 6167 9445 C-3 6167 , 6168 9427 C-6 PDIP-20 P 45/0 7188 9421 C-5 PDIP-22 P 45/0 6116
Integrated Device Technology
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SOJ-24 11V256 71V256 ss 9509 SRAM 6116 INTEGRATED DEVICE TECHNology 7164 A110 A106 61B98 SOJ-32 TQFP-80 PDIP-28 SOIC-28

power supply ic 9435

Abstract: 9435, ic M^E D â  58bö45b DG0131à 037 â MUHS MATRA MHS September 1990 DATA SHEET HM 6116 2 kx 8 GENERAL , DESCRIPTION The HM 6116 is a low power CMOS static RAM or-ganized as 2048 x 8 bits. It is manufactured using , available with a maximum power consumption of only 385 mW. The HM 6116 features fully static opération , HM 6116 are TTL compatible and operate from single 5 V supply thus simplifying system design. The HM 6116 is processed following the test methods of MIL STD 883C. PACKAGES LOGIC SYMBOL Plastic 600 mils
Integrated Device Technology
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power supply ic 9435 9435, ic ic 9435 9435 49C460 report on PLCC TSOP-28 VII-14

hm6116l -70

Abstract: 6116 RAM March 1994 HM 6116 DATA SHEET 2 Kx 8 GENERAL PURPOSE CMOS SRAM FEATURES . . , °C INTRODUCTION The HM 6116 is a very low power CMOS static RAM organized as 2048 x 8 bits. It is manufactured , . The HM 6116 are TTL compatible and operate from single 5 V supply thus simplifying system design. The HM 6116 is 100 % processed following the test methods of MIL STD 883C and/or ESA/SCC 9000 , and reliability. The HM 6116 features fully static operation requiring no external clocks or
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hm6116l -70 6116 RAM chip diagram of ram chip 6116 6116 6116 CMOS RAM memory 6116
Abstract: him MMS DATA SHEET March 1994 HM 6116 2 K x 8 GENERAL PURPOSE CMOS SRAM FEATURES ACCESS , HM 6116 is a very low power CMOS static RAM organized as 2048 x 8 bits. It is manufactured using the , with a maximum power consumption of only 385 mW. The HM 6116 features fully static operation requiring , HM 6116 are TTL compatible and operate from single 5 V supply thus simplifying system design. The HM 6116 Is 100 % processed following the test methods of MIL STD 883C and/or ESA/SCC 9000, making it -
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6116/R

6116 RAM

Abstract: SRAM 6116 h im HM 6116 DATA SHEET 2 Kx 8 GENERAL PURPOSE CMOS SRAM FEATURES 600 MILS WIDTH , HM 6116 is a very low power CMOS static RAM organized as 2048 x 8 bits. It is manufactured using the , commercial temperature range is available with a maximum power consumption of only 385 mW. The HM 6116 are TTL compatible and operate from single 5 V supply thus simplifying system design. The HM 6116 is , . The HM 6116 features fully static operation requiring no external clocks or timing strobes. Thanks to
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6116 memory 6116 SRAM ram 6116 6116 memory chip HM6116 6ll6

ES 61162

Abstract: Mill IraKI March 1994 DATASHEET_HM 6116 2 K X 8 GENERAL PURPOSE CMOS SRAM FEATURES . ACCESS , INTRODUCTION The HM 6116 is a very low power CMOS static RAM organized as 2048 x 8 bits. It is manufactured , available with a maximum power consumption of only 385 mW. The HM 6116 features fully static operation , drivers. The HM 6116 are TTL compatible and operate from single 5 V supply thus simplifying system design. The HM 6116 is 100 % processed following the test methods of MIL STD 883C and/or ESA/SCC 9000, making
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ES 61162 HM6116/R

6116 RAM

Abstract: 6116 Irillll I V i l l l September 1989 HM 6116 DATA SHEET_ 2kx8 GENERAL , three state drivers. The HM 6116 are TTL compatible and operate from single 5 V supply thus simplifying system design. The HM 6116 is processed following the test methods of MIL STD 883C. The HM 6116 is a low power CMOS static RAM or­ ganized as 2048 x 8 bits. It is manufactured using the MHS , with a maximum power consumption of only 385 mW. The HM 6116 features fully static operation
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6116 static ram 6116 RAM expansion circuit HM6116L-5 hm6116 battery HM61 DESCRIPTION 6116

6116 block diagram

Abstract: 6116 6116 5117 6516 8K x 8(64K) 8464 76C88 6264 6264 5165 6264/6265
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6116 block diagram F12-H F0F11

NEC D2732

Abstract: 41C1000 Pin Assignment HM 6116 A7C A6C A5C A4C A3 C A2C A1C A0 C 1 2 3 4 5 6 7 8 l
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71C256 41C1000 27C32 27C32Q NEC D2732 81c4256 41256 6264 SRAM 44256 dram 53C256 81C1000 71C1000 4C1024 81C4256

6264 SRAM

Abstract: SRAM 6264 WICE-8MA EPROM/SRAM Emulaor WICE-8MA Capacity Quantity Device Low voltage Device 2K 8 2 2716 4K 8 2 2732 8K 8 2 2764 16K 8 2 27128 32K 8 2 27256 64K 8 2 27512 128K 8 2 27010 27LV010 256K 8 2 27020 27LV020 512K 8 2 27040 27LV040 1024K 8 1 27080 27LV080 64K 16 1 271024 27LV1024 128K 16 1 272048 27LV2048 256K 16 1 274096 27LV4096 2K 8 2 6116 8K 8 2 6264 32K 8 2 62256 128K 8 2 628128 512K 8 2 628512 WICE-8MA is a high performance
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SRAM 6264 6264/L HM6264 HM6264/L

49LF002A

Abstract: 2732 eprom A T C H ADDRESS/DATA 6116 A0-A7 S R A M SPAD0-SPAD7 COMMON CONTROL/RESPONSE , D6 D7 A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 A10 6116 18 20 CE 21 OE WE 8 7 6 5
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N82802AB 49LF002A 49LF004 49LF020 49LF008A 2732 eprom 49lf003a EPROM 271024 49lf004a 9X/2000/NT 28F002 M50FW020 M50FW040 M50FW080

CD6116

Abstract: SRAM 6116 G round SRAM The M C M 6116 is a 16,384-bit S ta tic Random A ccess M em o ry organized as , degradation. T he M C M 6116 is in a 24-pin dua l-in-line package w ith the in dustry standard JEDEC , % te s te d . RECOMMENDED OPERATING CHARACTERISTICS P aram eter M C M 61L16 M CM 6116 S ym
WaferScale Integration
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80C31 CD6116 intel 6116 AD10 AD11 AD12

61L16

Abstract: s Hill /MATRA-HARRIS SEMICONDUCTOR HM 6116/6116 L 2K x 8 CMOS STATIC RAM Features â , '¢ GATED INPUTS â'¢ SINGLE 5V SUPPLY Description The HM 6116 is a 16384 bits static RAM organized as 2K , highest level of performance and reliability. The HM 6116(L) is housed in either plastic ceramic 24 pin on , Respective Manufacturer r HM 6116/6116L â'¢ ABSOLUTE MAXMUM RATINGS â'¢ OPERATING RANGE Operating , Paramater 6116 -5 6116L -5 6116 -2 6116L -2 6116 -9 6116L -9 Unit Value ICCSB (1) Standby supply current 3
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MCM6116

6116 RAM

Abstract: ci 6116 § 5 -= MHS IlM ll AIATRA-HARRIS SEMICONDUCTOR HM 6116/6116 L 2K x 8 CM OS STATIC RAM , 17 OQ0 £ 9 The H M 6116 is a 16384 bits static R A M organized as 2K x 8. It is manufactured , . The H M 6116(L) is housed in either plastic ceramic 24 pin on 32 pin leadJess chip carrier allowing , Functional Diagram 2-12 HM 6116/6116L â'¢ O P E R A T IN G R A N G E â'¢ A B S O L U T E M A X M , '¢ 5 ELECTRICAL CH ARACTERISTICS DC PARAM ETERS Symbol Paramater 6116 6116L 6116 6116L 6116
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ci 6116 Matra-Harris Semiconductor RAM type 6116 6116 ram 2k HM-6116 Matra-Harris 40 pin MIL-STD-883C 6116/6116L
Abstract: 6116 6116 . . 1. SED1520DOA SEIKO EPSON. 6116 . "1" , DB7 DB0; · DB7 DB0 (. . 3). .3. 1. (VLCD). + MT 6116 Vo Vcc VLCD Vcc + MT 6116 10.50 O GND Vo VLCD (.2). Vcc , ://www.melt.aha.ru 1 6116 2. . 4 1 DB4 2 3 DB5 DB6 4 5 DB7 7 , ( ) 2 Tacc Tdh Tdoh © 2003 http://www.melt.aha.ru 6116 3. . Display ON/OFF -
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SED1520DOA SEIKO EPSON

Abstract: 1602-H WM8759-6116-D14-EV1-REV1 Schematic and Layout DOC TYPE: Schematic and Layout BOARD REFERENCE: WM8759-6116-D14-EV1-REV1 BOARD TYPE: Customer Main Board / Customer Mini Board , 1 March 2008, Rev 1.1 WM8759-6116-D14-EV1-REV1 Schematic and Layout Schematic Sheet 1: Functional Diagram Customer Information 2 March 2008, Rev 1.1 WM8759-6116-D14-EV1-REV1 Schematic and Layout Sheet 2: Digital Input Customer Information 3 March 2008, Rev 1.1 WM8759-6116
MELT
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1602H SED1520DOA SEIKO EPSON 1602-H DB64

1x2 pin header 2.54mm pitch

Abstract: Phycomp 2238-586-15636 Standards Design and Test Criteria Telcordia GR-910 issue 2 performance requirements Part Number: ATN-61-16 Part Number: ATN-61-16 Product Specification ATN-61-16_NAFTA_AEN Page 1 | Revision date 2014-06-03 , substances according to RoHS 2002/95/ EG Ordering Information Part Number ATN-61-16 Product Description ST® Compatible UPC In-Line Optical Attenuator, Flat Wavelength Product Specification ATN-61-16 , Communications. All rights reserved. Product Specification ATN-61-16_NAFTA_AEN Page 3 | Revision date
Altera
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WM8759 1x2 pin header 2.54mm pitch Phycomp 2238-586-15636 5W zener diode Phycomp 2350 DIODE H5 SMD protech WM8759-6116-D14-EV1-REV1
Abstract: SG-BGA-6116 Drawing © 2009 IRONWOOD ELECTRONICS, INC. Tele: (952) 229-8200 www.ironwoodelectronics.com , : 4/24/04 File: SG-BGA-6116 Dwg Modified: 7/2/09, AE Nylon washer: 1.73mm ID; 4.78mm OD , mask. NOTE: Steel backing plate may be required based on end user's application SG-BGA-6116 Drawing , Drawing: H. Hansen Date: 4/24/04 File: SG-BGA-6116 Dwg Modified: 7/2/09, AE PAGE 2 of 3 , toleraces per ASME Y14.5M-1994. SG-BGA-6116 Drawing © 2009 IRONWOOD ELECTRONICS, INC. Tele: (952 Corning Cable Systems
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ATN-61-16
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