500 MILLION PARTS FROM 12000 MANUFACTURERS

DATASHEET SEARCH ENGINE

Search Stock

Shift+Click on the column header for multi-column sorting 
Part
Manufacturer
Supplier
Stock
Best Price
Price Each
Ordering
Part : SPW11N60S5 Supplier : Infineon Technologies Manufacturer : Rochester Electronics Stock : 16,791 Best Price : $2.22 Price Each : $2.73
Part : SPW11N60S5 Supplier : Infineon Technologies Manufacturer : RS Components Stock : 273 Best Price : £1.36 Price Each : £1.52
Part : SPW11N60S5 Supplier : Infineon Technologies Manufacturer : RS Components Stock : 12 Best Price : £1.36 Price Each : £1.74
Shipping cost not included. Currency conversions are estimated. 

SPW11N60S5 Datasheet

Part Manufacturer Description PDF Type
SPW11N60S5 Infineon Technologies Cool MOS Power Transistor Original
SPW11N60S5 Infineon Technologies CoolMOS Power MOSFET, 600V, TO-247, RDSon=0.38Ohm, 11.0A Original
SPW11N60S5 Infineon Technologies N-Channel MOSFETs (>500V - 900V); Package: PG-TO247-3; V<sub>DS</sub> (max): 600.0 V; Package: TO-247; R<sub>DS(ON)</sub> @ T<sub>J</sub>=25°C V<sub>GS</sub>=10: 380.0 mOhm; I<sub>D(max)</sub> @ T<sub>C</sub>=25°C: 11.0 A; I<sub>Dpuls</sub> (max): 22.0 A; Original
SPW11N60S5 Infineon Technologies Cool MOS Power Transistor Original

SPW11N60S5

Catalog Datasheet MFG & Type PDF Document Tags

SPW11N60S5

Abstract: 06161L SPW11N60S5 Preliminary data Cool MOSTM=Power Transistor = C OLMOS O Power , designation: SPWx2N60S5 Type Package Ordering Code SPW11N60S5 P-TO247 Q67040-S4239 D,2 , temperature Tj , Tstg 1 2001-07-25 SPW11N60S5 Preliminary data Electrical Characteristics, at , on-state resistance VGS = 10 V, ID = 7 A 1current limited by T jmax 2 2001-07-25 SPW11N60S5 , recovery charge Qrr diF /dt=100A/µs - 7.9 - µC 3 2001-07-25 SPW11N60S5
Infineon Technologies
Original
11N60S5 06161L 11N60S5 equivalent 2N60S5

11N60S5

Abstract: SPW11N60S5 SPW11N60S5 Final data Cool MOSTM Power Transistor VDS · Ultra low gate charge 0.38 , Improved transconductance Type SPW11N60S5 Package P-TO247 Ordering Code Q67040-S4239 Marking , T j , T stg -55. +150 °C Page 1 2003-07-02 SPW11N60S5 Final data Maximum , Drain - 29 - Page 2 2003-07-02 SPW11N60S5 Final data Electrical Characteristics , SPW11N60S5 Final data Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Symbol
Infineon Technologies
Original

20TP

Abstract: 11N60S5 SPW11N60S5 Cool MOSTM Power Transistor VDS · Ultra low gate charge 0.38 ID · , transconductance Type SPW11N60S5 Package P-TO247 Ordering Code Q67040-S4239 Marking 11N60S5 , , T stg -55. +150 °C Rev. 2.1 Page 1 2004-03-30 SPW11N60S5 Maximum Ratings , Page 2 2004-03-30 SPW11N60S5 Electrical Characteristics , at Tj = 25 °C, unless otherwise , 2004-03-30 SPW11N60S5 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Symbol
Infineon Technologies
Original
20TP

11N60

Abstract: 11n6 SPW11N60S5 D,2 Cool MOSTM Power-Transistor · New revolutionary high voltage technology · , Power Semiconductors SPWx2N60S5 Type V DS ID SPW11N60S5 600 V 11 A RDS(on) 0.38 W , storage temperature 1 2000-01-27 SPW11N60S5 Electrical Characteristics, at Tj = 25 °C, unless , SPW11N60S5 Electrical Characteristics, at T j = 25 °C, unless otherwise specified Parameter Symbol , charge Q rr diF/dt=100A/µs - 7.9 - µC 3 2000-01-27 SPW11N60S5 Power
Infineon Technologies
Original
11N60 11n6 marking code 68W 70
Abstract: SIEMENS SPW11N60S5 Preliminary data Cool MOSâ"¢ Power Transistor â'¢ New revolutionary , 9 9 SIEMENS SPW11N60S5 Preliminary data Electrical Characteristics Parameter Symbol , 1current limited by Tjmax Semiconductor Group 2 0 4 /1 9 9 9 SIEMENS SPW11N60S5 , = 11 A, Rq = 6.8 Q Semiconductor Group 3 0 4 /1 9 9 9 SIEMENS SPW11N60S5 , SIEMENS Preliminary data Power Dissipation Drain current P m = f ( T C) SPW11N60S5 b = f -
OCR Scan
P-T0247
Abstract: SPW11N60S5 Preliminary data Cool MOSâ"¢ Power-Transistor · Ultra low gate charge  , SPW11N60S5 600 V 11 A RDS(on) 0.38 W Package Marking Ordering Code P-TO247 11N60S5 , , Tstg Operating and storage temperature 1 2000-03-31 SPW11N60S5 Preliminary data , limited by T jmax 2 2000-03-31 SPW11N60S5 Preliminary data Electrical Characteristics, at , =100A/µs - 7.9 - µC 3 2000-03-31 SPW11N60S5 Preliminary data Power dissipation Infineon Technologies
Original

siemens 350 98

Abstract: 11N60S5 SPW11N60S5 Preliminary data D,2 Cool MOSTM Power Transistor · New revolutionary high , Semiconductors · Former development designation: SPWx2N60S5 Type VDS ID SPW11N60S5 600 V 11 A , , Tstg 1 04 / 1999 SPW11N60S5 Preliminary data Electrical Characteristics Parameter , 1current limited by T jmax Semiconductor Group 2 04 / 1999 SPW11N60S5 Preliminary data , 350 V, VGS = 10 V, ID = 11 A, RG = 6.8 Semiconductor Group 3 04 / 1999 SPW11N60S5
Siemens
Original
siemens 350 98

AR1010

Abstract: Final data SPW11N60S5 VDS RDS(on) ID 600 0.38 11 P-TO247 Cool MOSTM Power Transistor , SPW11N60S5 Package P-TO247 Ordering Code Q67040-S4239 Marking 11N60S5 Maximum Ratings, at TC = 25 , specified Static Characteristics Drain-source breakdown voltage VGS =0V, ID =0.25mA SPW11N60S5 Symbol , =350V, ID =11A, VGS =0 to 10V VDD =350V, ID =11A SPW11N60S5 Symbol Conditions min. Values , =0V, I F=IS V R=350V, I F=I S , diF/dt=100A/µs SPW11N60S5 Symbol Conditions min. Values typ
Infineon Technologies
Original
AR1010

11N60S5

Abstract: SPW11N60S5 SPW11N60S5 Cool MOSTM Power Transistor VDS · Ultra low gate charge 0.38 ID · , transconductance Type SPW11N60S5 Package PG-TO247 Ordering Code Q67040-S4239 Marking 11N60S5 , , T stg -55. +150 °C Rev. 2.4 Page 1 2008-02-11 SPW11N60S5 Maximum Ratings , =1MHz, open Drain - 29 - Page 2 2008-02-11 SPW11N60S5 Electrical Characteristics , at Tj = , . Rev. 2.4 Page 3 2008-02-11 SPW11N60S5 Electrical Characteristics, at Tj = 25 °C, unless
Infineon Technologies
Original
Abstract: Final data SPW11N60S5 Cool MOSTM Power Transistor · New revolutionary high voltage , Type SPW11N60S5 Package P-TO247 Ordering Code Q67040-S4239 Marking 11N60S5 G,1 D,2 S,3 , IGSS VGS(th) IDSS 3.5 4.5 V(BR)DSS 600 RthJC RthJA Symbol min. SPW11N60S5 Values typ. max. 1 62 , SPW11N60S5 Symbol Conditions min. Values typ. 6 1460 610 21 130 35 150 20 max. 225 30 Unit gfs , Final data Power dissipation Ptot = f (TC ) SPW11N60S5 SPW11N60S5 Drain current ID = f (TC Infineon Technologies
Original
Abstract: SPW11N60S5 Cool MOSTM Power Transistor Feature · New revolutionary high voltage technology · Ultra , Improved transconductance VDS RDS(on) ID 600 0.38 11 PG-TO247 V A Type SPW11N60S5 Package , temperature Rev. 2.1 Page 1 2005-02-10 SPW11N60S5 Maximum Ratings Parameter Drain Source voltage , SPW11N60S5 Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Characteristics , to 80% V DSS. Rev. 2.1 Page 3 2005-02-10 SPW11N60S5 Electrical Characteristics , at Tj Infineon Technologies
Original
Abstract: Final data SPW11N60S5 VDS RDS(on) ID 600 0.38 11 P-TO247 Cool MOSTM Power Transistor , SPW11N60S5 Package P-TO247 Ordering Code Q67040-S4239 Marking 11N60S5 Maximum Ratings, at TC = 25 , , ID = 11 A, Tj = 125 °C SPW11N60S5 Symbol dv/dt Value 20 Unit V/ns Thermal , =11A SPW11N60S5 Symbol gfs Ciss Coss Crss Conditions min. VDS2*ID*R DS(on)max, ID=7A VGS=0V, VDS=25V, f , charge VSD t rr Q rr VGS =0V, IF=IS VR =350V, IF =IS , diF/dt=100A/µs SPW11N60S5 Symbol IS I SM Infineon Technologies
Original

11N60S5 equivalent

Abstract: 11N60S5 SPW11N60S5 Cool MOSTM Power Transistor VDS · Ultra low gate charge 0.38 ID · , transconductance Type SPW11N60S5 Package PG-TO247 Ordering Code Q67040-S4239 Marking 11N60S5 , , T stg -55. +150 °C Rev. 2.3 Page 1 2005-06-28 SPW11N60S5 Maximum Ratings , =1MHz, open Drain - 29 - Page 2 2005-06-28 SPW11N60S5 Electrical Characteristics , at Tj = , . Rev. 2.3 Page 3 2005-06-28 SPW11N60S5 Electrical Characteristics, at Tj = 25 °C, unless
Infineon Technologies
Original

11N60S5

Abstract: SPW11N60S5 SPW11N60S5 Cool MOSTM Power Transistor VDS · Ultra low gate charge 0.38 ID · , transconductance Type SPW11N60S5 Package PG-TO247 Ordering Code Q67040-S4239 Marking 11N60S5 , dimensions arccording to PCN 2009-134-A SPW11N60S5 Maximum Ratings Parameter Symbol Drain Source , -A SPW11N60S5 Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Symbol , arccording to PCN 2009-134-A SPW11N60S5 Electrical Characteristics, at Tj = 25 °C, unless otherwise
Infineon Technologies
Original
PG-TO247-3

BUZ78

Abstract: SIPC69N60C3 SPP03N60S5 SPB04N60S5 SPN04N60S5 SPU07N60S5 SPW11N60S5 SPW47N60S5 SIPC06N60S5 SIPC61N60S5 SPP04N60C2
Infineon Technologies
Original
BTS443P SPNA2N80C2 SPP08N80C3 BTS840S2 BTS118D SIPC05N60C3 BUZ78 SIPC69N60C3 sipc01n80c2 P-Channel Depletion Mosfets buz22 BTS308 BTS409 BTS410-H2 BTS640S2 BTS650P

SIPC69N60C3

Abstract: SPW20N60S5 equivalent SPW11N60S5 SPW47N60S5 SIPC06N60S5 SIPC61N60S5 SPP04N60C2 SPB07N60C2 SPA07N60C2 SPA11N60C2 SPA20N60C2
Infineon Technologies
Original
BTS555 SIPC26N60C3 SIPC30S2N08 BSP229 SKP15N60 BUP314 SPW20N60S5 equivalent BUZ78 equivalent SDP06S60 SDP04S60 SDB10S30 BTS550P BTS114A

SIPC69N60C3

Abstract: sipc01n80c2 SPP11N60S5 1 SPW11N60S5 1 SIPC14N60S5 20 1 SPB20N60S5 1 1 SPP20N60S5 1 SPW20N60S5 1
Infineon Technologies
Original
SIPC10N60C3 SIPC14N60C3 SIPC07N80C3 SPB08N80C3 SIPC16N80C3 SIPC26N80C3 SPA11N60C3 equivalent SPA03N60S5 SPP11N60S5 equivalent N60C2 SIPC14N60C2 SPB20N60C2 SPP20N60C2 SPW20N60C2 SIPC26N60C2

UPS SIEMENS

Abstract: SPD01N60S5 * available in 4th quarter of 2000 0.9 6.0 A SPW11N60C2 SPW11N60S5 TO-220 SMD (D2-PAK
Infineon Technologies
Original
UPS SIEMENS SPD01N60S5 SPN01N60S5 SPN04N60C2 SPU01N60S5 A1040 to-252 RUS-125 B152-H7641-X-X-7600

TDA 16822

Abstract: 04N60C3 equivalent 3.5.5.5 2.1.3.9 11.0 11.0 41.5 45.0 SPW11N60S5 SPW11N60C3 0.6 3.5.5.5 7.3 , SPP20N60CFD SPW11N60CFD SPW11N60C3 SPW11N60S5 SPW11N80C3 SPW12N50C3 SPW15N60C3 SPW16N50C3 SPW17N80C3
Infineon Technologies
Original
TDA 16822 04N60C3 equivalent ICE1QS01 equivalent 07N60C3 mosfet transistor tda 3050 1QS01 B152-H8202-X-X-7600

irfp460 dc welding circuit diagram

Abstract: irfp450 mosfet full bridge SPI11N60S5 SPW11N60S5 SPB20N60C2 SPP20N60C2 SPW20N60C2 SPB20N60S5 SPP20N60S5 SPW20N60S5 , SPB20N60S5 SPP20N60S5 0.38 11 A 0.19 20 A SPI07N60S5 SPW11N60C2 SPI11N60S5 SPW11N60S5
Infineon Technologies
Original
irfp460 dc welding circuit diagram irfp450 mosfet full bridge ZVT Full bridge transformer IGBT IGBT ZVT Full bridge lossless passive clamp flyback converter ZVT full bridge for welding MOS-02 PL-03-821 S-164
Showing first 20 results.