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SPW11N60S5 Datasheet

Part Manufacturer Description PDF Type Ordering
SPW11N60S5 Infineon Technologies Cool MOS Power Transistor
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11 pages,
234.53 Kb

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SPW11N60S5 Infineon Technologies CoolMOS Power MOSFET, 600V, TO-247, RDSon=0.38Ohm, 11.0A
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9 pages,
100.39 Kb

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datasheet frame
SPW11N60S5 Infineon Technologies N-Channel MOSFETs (>500V - 900V); Package: PG-TO247-3; V<sub>DS</sub> (max): 600.0 V; Package: TO-247; R<sub>DS(ON)</sub> @ T<sub>J</sub>=25°C V<sub>GS</sub>=10: 380.0 mOhm; I<sub>D(max)</sub> @ T<sub>C</sub>=25°C: 11.0 A; I<sub>Dpuls</sub> (max): 22.0 A;
ri

12 pages,
913.66 Kb

Original Buy
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SPW11N60S5 Infineon Technologies Cool MOS Power Transistor
ri

11 pages,
246.74 Kb

Original Buy
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SPW11N60S5

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: SPW11N60S5 Preliminary data Cool MOSTM=Power Transistor = C OLMOS O Power , designation: SPWx2N60S5 Type Package Ordering Code SPW11N60S5 P-TO247 P-TO247 Q67040-S4239 Q67040-S4239 D,2 , temperature Tj , Tstg 1 2001-07-25 SPW11N60S5 Preliminary data Electrical Characteristics, at , on-state resistance VGS = 10 V, ID = 7 A 1current limited by T jmax 2 2001-07-25 SPW11N60S5 , recovery charge Qrr diF /dt=100A/us - 7.9 - uC 3 2001-07-25 SPW11N60S5 ... Infineon Technologies
Original
datasheet

9 pages,
100.4 Kb

11N60S5 11N60S5 equivalent SPW11N60S5 TEXT
datasheet frame
Abstract: SPW11N60S5 Final data Cool MOSTM Power Transistor VDS · Ultra low gate charge 0.38 , Improved transconductance Type SPW11N60S5 Package P-TO247 P-TO247 Ordering Code Q67040-S4239 Q67040-S4239 Marking , T j , T stg -55. +150 °C Page 1 2003-07-02 SPW11N60S5 Final data Maximum , Drain - 29 - Page 2 2003-07-02 SPW11N60S5 Final data Electrical Characteristics , SPW11N60S5 Final data Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Symbol ... Infineon Technologies
Original
datasheet

11 pages,
234.53 Kb

SPW11N60S5 11N60S5 TEXT
datasheet frame
Abstract: SPW11N60S5 Cool MOSTM Power Transistor VDS · Ultra low gate charge 0.38 ID · , transconductance Type SPW11N60S5 Package P-TO247 P-TO247 Ordering Code Q67040-S4239 Q67040-S4239 Marking 11N60S5 11N60S5 , , T stg -55. +150 °C Rev. 2.1 Page 1 2004-03-30 SPW11N60S5 Maximum Ratings , Page 2 2004-03-30 SPW11N60S5 Electrical Characteristics , at Tj = 25 °C, unless otherwise , 2004-03-30 SPW11N60S5 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Symbol ... Infineon Technologies
Original
datasheet

11 pages,
246.73 Kb

SPW11N60S5 11N60S5 TEXT
datasheet frame
Abstract: SPW11N60S5 D,2 Cool MOSTM Power-Transistor · New revolutionary high voltage technology · , Power Semiconductors SPWx2N60S5 Type V DS ID SPW11N60S5 600 V 11 A RDS(on) 0.38 W , storage temperature 1 2000-01-27 SPW11N60S5 Electrical Characteristics, at Tj = 25 °C, unless , SPW11N60S5 Electrical Characteristics, at T j = 25 °C, unless otherwise specified Parameter Symbol , charge Q rr diF/dt=100A/us - 7.9 - uC 3 2000-01-27 SPW11N60S5 Power ... Infineon Technologies
Original
datasheet

9 pages,
97.22 Kb

SPW11N60S5 Q67040-S4239 marking code 68W 70 11N60S5 11n6 11N60 TEXT
datasheet frame
Abstract: SIEMENS SPW11N60S5 Preliminary data Cool MOS™ Power Transistor • New revolutionary , 9 9 SIEMENS SPW11N60S5 Preliminary data Electrical Characteristics Parameter Symbol , 1current limited by Tjmax Semiconductor Group 2 0 4 /1 9 9 9 SIEMENS SPW11N60S5 , = 11 A, Rq = 6.8 Q Semiconductor Group 3 0 4 /1 9 9 9 SIEMENS SPW11N60S5 , SIEMENS Preliminary data Power Dissipation Drain current P m = f ( T C) SPW11N60S5 b = f ... OCR Scan
datasheet

9 pages,
102.18 Kb

SPW11N60S5 TEXT
datasheet frame
Abstract: SPW11N60S5 Preliminary data Cool MOS™ Power-Transistor · Ultra low gate charge  , SPW11N60S5 600 V 11 A RDS(on) 0.38 W Package Marking Ordering Code P-TO247 P-TO247 11N60S5 11N60S5 , , Tstg Operating and storage temperature 1 2000-03-31 SPW11N60S5 Preliminary data , limited by T jmax 2 2000-03-31 SPW11N60S5 Preliminary data Electrical Characteristics, at , =100A/Âus - 7.9 - ÂuC 3 2000-03-31 SPW11N60S5 Preliminary data Power dissipation ... Infineon Technologies
Original
datasheet

9 pages,
98.51 Kb

SPW11N60S5 TEXT
datasheet frame
Abstract: SPW11N60S5 Preliminary data D,2 Cool MOSTM Power Transistor · New revolutionary high , Semiconductors · Former development designation: SPWx2N60S5 Type VDS ID SPW11N60S5 600 V 11 A , , Tstg 1 04 / 1999 SPW11N60S5 Preliminary data Electrical Characteristics Parameter , 1current limited by T jmax Semiconductor Group 2 04 / 1999 SPW11N60S5 Preliminary data , 350 V, VGS = 10 V, ID = 11 A, RG = 6.8 Semiconductor Group 3 04 / 1999 SPW11N60S5 ... Siemens
Original
datasheet

10 pages,
108.53 Kb

SPW11N60S5 11N60S5 siemens 350 98 TEXT
datasheet frame
Abstract: Final data SPW11N60S5 VDS RDS(on) ID 600 0.38 11 P-TO247 P-TO247 Cool MOSTM Power Transistor , SPW11N60S5 Package P-TO247 P-TO247 Ordering Code Q67040-S4239 Q67040-S4239 Marking 11N60S5 11N60S5 Maximum Ratings, at TC = 25 , specified Static Characteristics Drain-source breakdown voltage VGS =0V, ID =0.25mA SPW11N60S5 Symbol , =350V, ID =11A, VGS =0 to 10V VDD =350V, ID =11A SPW11N60S5 Symbol Conditions min. Values , =0V, I F=IS V R=350V, I F=I S , diF/dt=100A/us SPW11N60S5 Symbol Conditions min. Values typ ... Infineon Technologies
Original
datasheet

11 pages,
114.42 Kb

SPW11N60S5 P-TO247 TEXT
datasheet frame
Abstract: SPW11N60S5 Cool MOSTM Power Transistor VDS · Ultra low gate charge 0.38 ID · , transconductance Type SPW11N60S5 Package PG-TO247 PG-TO247 Ordering Code Q67040-S4239 Q67040-S4239 Marking 11N60S5 11N60S5 , , T stg -55. +150 °C Rev. 2.4 Page 1 2008-02-11 SPW11N60S5 Maximum Ratings , =1MHz, open Drain - 29 - Page 2 2008-02-11 SPW11N60S5 Electrical Characteristics , at Tj = , . Rev. 2.4 Page 3 2008-02-11 SPW11N60S5 Electrical Characteristics, at Tj = 25 °C, unless ... Infineon Technologies
Original
datasheet

11 pages,
680.87 Kb

SPW11N60S5 11N60S5 TEXT
datasheet frame
Abstract: Final data SPW11N60S5 Cool MOSTM Power Transistor · New revolutionary high voltage , Type SPW11N60S5 Package P-TO247 P-TO247 Ordering Code Q67040-S4239 Q67040-S4239 Marking 11N60S5 11N60S5 G,1 D,2 S,3 , IGSS VGS(th) IDSS 3.5 4.5 V(BR)DSS 600 RthJC RthJA Symbol min. SPW11N60S5 Values typ. max. 1 62 , SPW11N60S5 Symbol Conditions min. Values typ. 6 1460 610 21 130 35 150 20 max. 225 30 Unit gfs , Final data Power dissipation Ptot = f (TC ) SPW11N60S5 SPW11N60S5 Drain current ID = f (TC ... Infineon Technologies
Original
datasheet

9 pages,
85.26 Kb

SPW11N60S5 TEXT
datasheet frame

Archived Files

Abstract Saved from Date Saved File Size Type Download
Q67040-S4196 Q67040-S4196  SPW11N60S5  kB  SPW11N60S5
/datasheets/files/infineon/wwwinf~1.com/produc~1/pro~1764.htm
Infineon 28/10/2000 82.98 Kb HTM pro~1764.htm
Q67040-S4196 Q67040-S4196  SPW11N60S5  kB  SPW11N60S5
/datasheets/files/infineon/wwwinf~1.com/produc~1/pro~2130.htm
Infineon 28/10/2000 83.02 Kb HTM pro~2130.htm
No SPW11N60S5 N - 11 A - - - - P-TO-247 P-TO-247 125 W 0.38
/datasheets/files/infineon/wwwinf~1.com/produc~1/para~429.htm
Infineon 19/10/2000 84.19 Kb HTM para~429.htm
No SPW11N60S5 N - 11 A - - - - P-TO-247 P-TO-247 125 W 0.38
/datasheets/files/infineon/wwwinf~1.com/produc~1/param~59.htm
Infineon 19/10/2000 84.19 Kb HTM param~59.htm
* * SPW11N60S5 * * SPB20N60S5 SPB20N60S5 R_Rth7 6 7 15.8 .ENDS *$ .SUBCKT SPW11N60S5 drain gate source Tj Tcase PARAMS
/datasheets/files/spicemodels/misc/infineon_coolmos_600.lib
Spice Models 22/06/2007 223.5 Kb LIB infineon_coolmos_600.lib
No abstract text available
/download/95257431-169543ZC/powersip.zip ()
Infineon 07/09/2000 242.21 Kb ZIP powersip.zip
No abstract text available
/download/59567118-609117ZC/ncp1606 pspice model.zip ()
On Semiconductor 05/09/2007 244.11 Kb ZIP ncp1606 pspice model.zip
* * = SPI11N60S5 SPI11N60S5 * * = SPW11N60S5
/datasheets/files/spicemodels/misc/infineon.lib
Spice Models 04/09/2012 2432.1 Kb LIB infineon.lib

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Toshiba Part Industry Part Manufacturer Description Category
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