NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS

Datasheet Archive - Datasheet Search Engine

 

SPW11N60S5 Datasheet

Part Manufacturer Description PDF Type Ordering
SPW11N60S5 Infineon Technologies Cool MOS Power Transistor
ri

11 pages,
234.53 Kb

Original Buy
datasheet frame
SPW11N60S5 Infineon Technologies CoolMOS Power MOSFET, 600V, TO-247, RDSon=0.38Ohm, 11.0A
ri

9 pages,
100.39 Kb

Original Buy
datasheet frame
SPW11N60S5 Infineon Technologies N-Channel MOSFETs (>500V - 900V); Package: PG-TO247-3; V<sub>DS</sub> (max): 600.0 V; Package: TO-247; R<sub>DS(ON)</sub> @ T<sub>J</sub>=25°C V<sub>GS</sub>=10: 380.0 mOhm; I<sub>D(max)</sub> @ T<sub>C</sub>=25°C: 11.0 A; I<sub>Dpuls</sub> (max): 22.0 A;
ri

12 pages,
913.66 Kb

Original Buy
datasheet frame
SPW11N60S5 Infineon Technologies Cool MOS Power Transistor
ri

11 pages,
246.74 Kb

Original Buy
datasheet frame

SPW11N60S5

Catalog Datasheet Results Type PDF Document Tags
Abstract: Final data SPW11N60S5 Cool MOSTM Power Transistor · New revolutionary high voltage , Type SPW11N60S5 Package P-TO247 P-TO247 Ordering Code Q67040-S4239 Q67040-S4239 Marking 11N60S5 11N60S5 G,1 D,2 S,3 , SPW11N60S5 Values typ. max. 1 62 Unit K/W 5.5 V µA 25 250 100 0.38 nA 1current limited , =0 to 10V VDD =350V, ID =11A SPW11N60S5 Symbol Conditions min. Values typ. 6 1460 610 21 , 1105 - A V ns µC 3 2002-07-26 Final data Power dissipation Ptot = f (TC ) SPW11N60S5 ... Original
datasheet

9 pages,
85.26 Kb

SPW11N60S5 SPW11N60S5 abstract
datasheet frame
Abstract: SPW11N60S5 Preliminary data Cool MOSTM=Power Transistor = C OLMOS O Power , designation: SPWx2N60S5 Type Package Ordering Code SPW11N60S5 P-TO247 P-TO247 Q67040-S4239 Q67040-S4239 D,2 , temperature Tj , Tstg 1 2001-07-25 SPW11N60S5 Preliminary data Electrical Characteristics, at , on-state resistance VGS = 10 V, ID = 7 A 1current limited by T jmax 2 2001-07-25 SPW11N60S5 , recovery charge Qrr diF /dt=100A/µs - 7.9 - µC 3 2001-07-25 SPW11N60S5 ... Original
datasheet

9 pages,
100.4 Kb

11N60S5 11N60S5 equivalent SPW11N60S5 SPW11N60S5 abstract
datasheet frame
Abstract: SPW11N60S5 D,2 Cool MOSTM Power-Transistor · New revolutionary high voltage technology · , Power Semiconductors SPWx2N60S5 Type V DS ID SPW11N60S5 600 V 11 A RDS(on) 0.38 W , storage temperature 1 2000-01-27 SPW11N60S5 Electrical Characteristics, at Tj = 25 °C, unless , SPW11N60S5 Electrical Characteristics, at T j = 25 °C, unless otherwise specified Parameter Symbol , rr diF/dt=100A/µs - 7.9 - µC 3 2000-01-27 SPW11N60S5 Power dissipation ... Original
datasheet

9 pages,
97.22 Kb

SPW11N60S5 Q67040-S4239 11N60S5 11N60 SPW11N60S5 abstract
datasheet frame
Abstract: SPW11N60S5 Preliminary data D,2 Cool MOSTM Power Transistor · New revolutionary high , Semiconductors · Former development designation: SPWx2N60S5 Type VDS ID SPW11N60S5 600 V 11 A , , Tstg 1 04 / 1999 SPW11N60S5 Preliminary data Electrical Characteristics Parameter , 1current limited by T jmax Semiconductor Group 2 04 / 1999 SPW11N60S5 Preliminary data , 350 V, VGS = 10 V, ID = 11 A, RG = 6.8 Semiconductor Group 3 04 / 1999 SPW11N60S5 ... Original
datasheet

10 pages,
108.53 Kb

SPW11N60S5 11N60S5 siemens 350 98 SPW11N60S5 abstract
datasheet frame
Abstract: SPW11N60S5 Cool MOSTM Power Transistor VDS · Ultra low gate charge 0.38 ID · , transconductance Type SPW11N60S5 Package PG-TO247 PG-TO247 Ordering Code Q67040-S4239 Q67040-S4239 Marking 11N60S5 11N60S5 , , T stg -55. +150 °C Rev. 2.4 Page 1 2008-02-11 SPW11N60S5 Maximum Ratings , f=1MHz, open Drain - 29 - Page 2 2008-02-11 SPW11N60S5 Electrical Characteristics , Rev. 2.4 Page 3 2008-02-11 SPW11N60S5 Electrical Characteristics, at Tj = 25 °C, unless ... Original
datasheet

11 pages,
680.87 Kb

SPW11N60S5 11N60S5 SPW11N60S5 abstract
datasheet frame
Abstract: Final data SPW11N60S5 VDS RDS(on) ID 600 0.38 11 P-TO247 P-TO247 Cool MOSTM Power Transistor , SPW11N60S5 Package P-TO247 P-TO247 Ordering Code Q67040-S4239 Q67040-S4239 Marking 11N60S5 11N60S5 Maximum Ratings, at TC = , slope VDS = 480 V, ID = 11 A, Tj = 125 °C SPW11N60S5 Symbol dv/dt Value 20 Unit V/ns , VDD=350V, ID=11A SPW11N60S5 Symbol gfs Ciss Coss Crss Conditions min. VDS2*ID*R DS(on)max, ID=7A , SPW11N60S5 Symbol IS I SM Conditions min. TC=25°C Values typ. 1 650 7.9 max. 11 22 1.2 1105 - ... Original
datasheet

11 pages,
228.57 Kb

SPW11N60S5 P-TO247 SPW11N60S5 abstract
datasheet frame
Abstract: Final data SPW11N60S5 VDS RDS(on) ID 600 0.38 11 P-TO247 P-TO247 Cool MOSTM Power Transistor , SPW11N60S5 Package P-TO247 P-TO247 Ordering Code Q67040-S4239 Q67040-S4239 Marking 11N60S5 11N60S5 Maximum Ratings, at TC = , specified Static Characteristics Drain-source breakdown voltage VGS =0V, ID =0.25mA SPW11N60S5 Symbol , =350V, ID =11A, VGS =0 to 10V VDD =350V, ID =11A SPW11N60S5 Symbol Conditions min. Values , , I F=IS V R=350V, I F=I S , diF/dt=100A/µs SPW11N60S5 Symbol Conditions min. Values typ. ... Original
datasheet

11 pages,
114.42 Kb

SPW11N60S5 P-TO247 SPW11N60S5 abstract
datasheet frame
Abstract: SPW11N60S5 Cool MOSTM Power Transistor Feature · New revolutionary high voltage technology · Ultra , Improved transconductance VDS RDS(on) ID 600 0.38 11 PG-TO247 PG-TO247 V A Type SPW11N60S5 Package , temperature Rev. 2.1 Page 1 2005-02-10 SPW11N60S5 Maximum Ratings Parameter Drain Source voltage , SPW11N60S5 Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Characteristics , Rev. 2.1 Page 3 2005-02-10 SPW11N60S5 Electrical Characteristics , at Tj = 25 °C, unless ... Original
datasheet

11 pages,
282.49 Kb

SPW11N60S5 SPW11N60S5 abstract
datasheet frame
Abstract: SPW11N60S5 Cool MOSTM Power Transistor VDS · Ultra low gate charge 0.38 ID · , transconductance Type SPW11N60S5 Package P-TO247 P-TO247 Ordering Code Q67040-S4239 Q67040-S4239 Marking 11N60S5 11N60S5 , , T stg -55. +150 °C Rev. 2.1 Page 1 2004-03-30 SPW11N60S5 Maximum Ratings , Page 2 2004-03-30 SPW11N60S5 Electrical Characteristics , at Tj = 25 °C, unless otherwise , 2004-03-30 SPW11N60S5 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Symbol ... Original
datasheet

11 pages,
246.73 Kb

SPW11N60S5 11N60S5 SPW11N60S5 abstract
datasheet frame
Abstract: SPW11N60S5 Final data Cool MOSTM Power Transistor VDS · Ultra low gate charge 0.38 , Improved transconductance Type SPW11N60S5 Package P-TO247 P-TO247 Ordering Code Q67040-S4239 Q67040-S4239 Marking , T j , T stg -55. +150 °C Page 1 2003-07-02 SPW11N60S5 Final data Maximum , Drain - 29 - Page 2 2003-07-02 SPW11N60S5 Final data Electrical Characteristics , 2003-07-02 SPW11N60S5 Final data Electrical Characteristics, at Tj = 25 °C, unless otherwise ... Original
datasheet

11 pages,
234.53 Kb

SPW11N60S5 11N60S5 P-TO247 SPW11N60S5 abstract
datasheet frame

Datasheet Content (non pdf)

Abstract Saved from Date Saved File Size Type Download
Over 1.1 million files (1986-2014): html articles, reference designs, gerber files, chemical content, spice models, programs, code, pricing, images, circuits, parametric data, RoHS data, cross references, pcns, military data, and more. Please note that due to their age, these files do not always format correctly in modern browsers. Disclaimer.
 
SPW11N60S5 Cool MOS Power Transistor SPW11N60S5
www.datasheetarchive.com/files/infineon/wwwinf~1.com/produc~1/pro~2130.htm
Infineon 28/10/2000 83.02 Kb HTM pro~2130.htm
SPW11N60S5 Cool MOS Power Transistor SPW11N60S5
www.datasheetarchive.com/files/infineon/wwwinf~1.com/produc~1/pro~1764.htm
Infineon 28/10/2000 82.98 Kb HTM pro~1764.htm
No abstract text available
www.datasheetarchive.com/download/59567118-609117ZC/ncp1606 pspice model.zip (CoolMOS_SPI_P_WxxN60S5_L3.slb)
On Semiconductor 05/09/2007 244.11 Kb ZIP ncp1606 pspice model.zip
V 3.5 V - - No SPW11N60S5 N - 11 A - - - - P-TO-247 P-TO-247 P-TO-247 P-TO-247 125 W 0.38 Ohm 1 K/W 600 V 5.5 V 3.5 V - -
www.datasheetarchive.com/files/infineon/wwwinf~1.com/produc~1/param~59.htm
Infineon 19/10/2000 84.19 Kb HTM param~59.htm
V 3.5 V - - No SPW11N60S5 N - 11 A - - - - P-TO-247 P-TO-247 P-TO-247 P-TO-247 125 W 0.38 Ohm 1 K/W 600 V 5.5 V 3.5 V - -
www.datasheetarchive.com/files/infineon/wwwinf~1.com/produc~1/para~429.htm
Infineon 19/10/2000 84.19 Kb HTM para~429.htm
* * SPW11N60S5 * * SPB20N60S5 SPB20N60S5 SPB20N60S5 SPB20N60S5 R_Rth7 6 7 15.8 .ENDS *$ .SUBCKT SPW11N60S5 drain gate source Tj Tcase PARAMS
www.datasheetarchive.com/files/spicemodels/misc/infineon_coolmos_600.lib
Spice Models 22/06/2007 223.5 Kb LIB infineon_coolmos_600.lib
No abstract text available
www.datasheetarchive.com/download/59567118-609117ZC/ncp1606 pspice model.zip (CoolMOS_standard_PSpice.lib)
On Semiconductor 05/09/2007 244.11 Kb ZIP ncp1606 pspice model.zip
No abstract text available
www.datasheetarchive.com/download/59567118-609117ZC/ncp1606 pspice model.zip (CoolMOS_simplified_Spice_models.lib)
On Semiconductor 05/09/2007 244.11 Kb ZIP ncp1606 pspice model.zip
No abstract text available
www.datasheetarchive.com/download/59567118-609117ZC/ncp1606 pspice model.zip (CoolMOS_simplified_Spice_models.lib)
On Semiconductor 05/09/2007 244.11 Kb ZIP ncp1606 pspice model.zip
No abstract text available
www.datasheetarchive.com/download/95257431-169543ZC/powersip.zip (powersip.xls)
Infineon 07/09/2000 242.21 Kb ZIP powersip.zip

Fairchild Cross Reference Results

Fairchild Part Orderable Industry Part Manufacturer Type Family Description
FCB11N60 FCB11N60 Buy SPW11N60S5 Buy Infineon (Siemens) Direct Power MOSFET 600V N-Channel SuperFET

Toshiba Cross Reference Results

Toshiba Part Industry Part Manufacturer Description Category
TK12J60U Buy SPW11N60S5 Buy Infineon Technologies Power MOSFET (Nch 500V < VDSS 700V) - TO-3P(N) - Transistors

Misc. Cross Reference Results

Part Similar Part Notes
SPW11N60S5 Buy IRFPC50 Buy
SPW11N60S5 Buy STW14NK60Z Buy
SPW11N60S5 Buy STW16NB60 Buy
SPW11N60S5 Buy STW16NK60Z Buy
SPW11N60S5 Buy STW18NK60Z Buy