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SPU23N05 Datasheet

Part Manufacturer Description PDF Type
SPU23N05 Infineon Technologies SIPMOS Power-Transistor Original
SPU23N05 Siemens Original
SPU23N05 Siemens SIPMOS Power Transistor Original
SPU23N05 Toshiba Power MOSFETs Cross Reference Guide Original
SPU23N05L Siemens N-channel SIPMOS power transistor Original

SPU23N05

Catalog Datasheet MFG & Type PDF Document Tags

P-TO252

Abstract: SPD23N05 SPD23N05 SPU23N05 SIPMOS ® Power Transistor · N channel · Enhancement mode · , Q67040 - S4138 - A2 SPU23N05 55 V 22 A 0.06 P-TO251 Q67040 - S4131 - A2 Maximum , Semiconductor Group V W 55 1 29/Jan/1998 SPD23N05 SPU23N05 Maximum Ratings Parameter , SPD23N05 SPU23N05 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter , SPU23N05 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol
Siemens
Original
P-TO252
Abstract: SIEMENS SIPMOS ® Power Transistor SPD23N05 SPU23N05 · N channel · Enhancement mode · , SPU23N05 VDS 55 V 55 V k> 22 A 22 A *DS(on) 0.06 Q 0.06 Q Package P-T0252 P-T0251 Ordering , category, DIN IEC 68-1 Symbol ri ^stg ^IhJC RthJA %iJA Values SPD23N05 SPU23N05 Unit °C -55 . + , Parameter Symbol min. Dynamic Characteristics Transconductance ^ D S - 2 * ;D 9fs b SPD23N05 SPU23N05 , SPU23N05 Values typ. max. Unit k A 22 'sm 88 ^SD . V 1.2 1.8 ns 55 85 fjC 0.12 0.18 -
OCR Scan
40//A 372//H

P-TO252

Abstract: SPD23N05 SPD23N05 SPU23N05 Preliminary data SIPMOS ® Power Transistor · N channel · Enhancement , P-TO252 Q67000-. . . . - . . SPU23N05 55 V 22 A 0.06 P-TO251 Q67000-. . . . - . . , Semiconductor Group V W 55 1 20/Nov/1997 SPD23N05 SPU23N05 Preliminary data Maximum , SPD23N05 SPU23N05 Preliminary data Electrical Characteristics, at Tj = 25°C, unless otherwise , , VGS =0 to 7 V Gate charge total nC V - 3 5.9 - 20/Nov/1997 SPD23N05 SPU23N05
Siemens
Original

23N05

Abstract: SPD 23N05 Infineon t« c h n o l o g ¡ o s i m p * o V e d R o ,°"â'™ SIPMOS® PowerTransistor Product Summary Features Drain source voltage â'¢ N channel â'¢ Enhancement mode â'¢ Avalanche rated ^DS Drain-Source on-state resistance Continuous drain current 55 V k> Q . 22 f í DSÃon) 0.05 A â'¢ dv/df rated â'¢ 175â'˜ C operating temperature Type Package Ordering Code SPD23N05 P-T0252 Q67040-S4152 Tape and Reel SPU23N05 P-T0251
-
OCR Scan
Q67040-S4132-A2 P-T0252-3-1 G13377 P-T0263-3-2/D2PAK Q133777 SQT-89

23N05

Abstract: transistor D.A.T.A. book SPD 23N05 SIPMOS Power Transistor Features · N channel · Product Summary Drain source voltage Drain-Source on-state resistance Continuous drain current VDS RDS(on) ID 55 0.05 22 V A Enhancement mode · Avalanche rated · dv/dt rated · 175°C operating temperature Type SPD23N05 SPU23N05 Package P-TO252 P-TO251 Ordering Code Packaging Pin 1 G Pin 2 D Pin 3 S Q67040-S4138-A2 Tape and Reel Q67040-S4132-A2 Tube Maximum Ratings, at Tj = 25 °C, unless otherwise specified
Infineon Technologies
Original
transistor D.A.T.A. book

BUZ MOSFET

Abstract: mosfet BUZ 326 SPU07N20 SPU08N05L SPU08N10 SPU08P05 SPU09N05 SPU10N10 SPU13N05L SPU14N05 SPU21N05L SPU23N05 , 2.00 Type SPU30N03 SPU28N03 SPU30N03L SPU28N03L SPU31N05 SPU23N05 SPU14N05 SPU09N05 , 10.00 8.40 7.00 2.00 Type SPU30N03 SPU28N03 SPU30N03L SPU28N03L SPU31N05 SPU23N05 SPU14N05
Siemens
Original
BUZ MOSFET mosfet BUZ 326 BUP 312 BSS 130 BUP 304 bup 313 615NV PL-03-821 B152-H6493-G5-X-7600

23N05

Abstract: P-TO252 SPD 23N05 SIPMOS® Power Transistor Features Product Summary · N channel Drain source voltage VDS · Drain-Source on-state resistance RDS(on) Continuous drain current ID Enhancement mode · Avalanche rated 55 V 0.05 22 A · dv/dt rated · 175°C operating temperature Type Package Ordering Code Packaging SPD23N05 P-TO252 Q67040-S4152 P-TO251 Pin 2 Pin 3 G D S Tape and Reel SPU23N05 Pin 1 Q67040-S4132-A2 Tube Maximum
Infineon Technologies
Original

BUZ MOSFET

Abstract: mosfet BUZ 326 SPU13N05L SPU14N05 SPU21N05L SPU23N05 SPU28N03 SPU28N03L SPU28N05L SPU30N03 SPU30N03L SPU31N05 30 30 30
-
OCR Scan
BUZ MOSFET 334 spd14n05 mosfet BUZ 349 BUZ 100 MOSFET mosfet buz 90a km 8560 BSP318S