SPD07N60C3 SPU07N60C3 P-TO251-3-1 P-TO252-3-1 Q67040-S4423 07N60C3 0/13V

SPU07N60C3 Preliminary data Cool MOSTM=Power Transistor = C OLMOS O Power Semiconductors Feature ·=New revolutionary high

SPD07N60C3 SPD07N60C3 SPU07N60C3 SPU07N60C3 Preliminary data Cool MOSTM=Power Transistor = C OLMOS O Power Semiconductors Feature ·=New revolutionary high voltage technology Product Summary · Worldwide best R DS(on) in TO 220 · Ultra low gate charge VDS @ Tjmax 650 V RDS(on) 0.6 ·=Periodic avalanche rated ID 7.3 A · Extreme dv/dt rated P-TO251-3-1 P-TO251-3-1 P-TO252-3-1 P-TO252-3-1 ·=High peak current capability ·=Improved transconductance ·=150 °C operating temperature Type Package Ordering Code Marking SPD07N60C3 SPD07N60C3 P-TO252-3-1 P-TO252-3-1 Q67040-S4423 Q67040-S4423 07N60C3 07N60C3 SPU07N60C3 SPU07N60C3 P-TO251-3-1 P-TO251-3-1 - 07N60C3 07N60C3 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current Value Unit ID A TC = 25 °C 7.3 TC = 100 °C 4.6 Pulsed drain current, tp limited by Tjmax ID puls 21.9 Avalanche energy, single pulse EAS 230 EAR 0.5 Avalanche current, repetitive tAR limited by Tjmax IAR 7.3 Reverse diode dv/dt dv/dt 6 Gate source voltage static VGS ±20 Gate source voltage dynamic VGS ±30 Power dissipation, TC = 25°C Ptot 83 W Operating and storage temperature Tj , Tstg -55. +150 °C mJ ID =5.5A, VDD =50V Avalanche energy, repetitive tAR limited by Tjmax 1) ID =7.3A, VDD =50V A V/ns IS =7.3A, VDS