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Part : SPP07N60C3 Supplier : Infineon Technologies Manufacturer : Avnet Stock : - Best Price : $0.8569 Price Each : $0.9559
Part : SPP07N60C3 Supplier : Infineon Technologies Manufacturer : Avnet Stock : - Best Price : €1.0237 Price Each : €1.8810
Part : SPP07N60C3 Supplier : Infineon Technologies Manufacturer : Avnet Stock : - Best Price : €0.8249 Price Each : €1.4369
Part : SPP07N60C3HKSA1 Supplier : Infineon Technologies Manufacturer : Avnet Stock : - Best Price : - Price Each : -
Part : SPP07N60C3HKSA1 Supplier : Infineon Technologies Manufacturer : Avnet Stock : - Best Price : - Price Each : -
Part : SPP07N60C3XK Supplier : Infineon Technologies Manufacturer : Avnet Stock : 476 Best Price : $0.87 Price Each : $1.97
Part : SPP07N60C3XKSA1 Supplier : Infineon Technologies Manufacturer : Newark element14 Stock : 143 Best Price : $0.87 Price Each : $1.97
Part : SPP07N60C3XKSA1 Supplier : Infineon Technologies Manufacturer : Future Electronics Stock : - Best Price : $0.8750 Price Each : $0.91
Part : SPP07N60C3 Supplier : Infineon Technologies Manufacturer : ComSIT Stock : 264 Best Price : - Price Each : -
Part : SPP07N60C3 Supplier : Infineon Technologies Manufacturer : Chip One Exchange Stock : 20 Best Price : - Price Each : -
Part : SPP07N60C3XKSA1 Supplier : Infineon Technologies Manufacturer : Chip1Stop Stock : 3,016 Best Price : $1.06 Price Each : $2.45
Part : SPP07N60C3XKSA1 Supplier : Infineon Technologies Manufacturer : element14 Asia-Pacific Stock : 143 Best Price : $1.07 Price Each : $2.5120
Part : SPP07N60C3XKSA1 Supplier : Infineon Technologies Manufacturer : Farnell element14 Stock : 149 Best Price : £0.7820 Price Each : £1.47
Part : SPP07N60C3 Supplier : Infineon Technologies Manufacturer : Wuhan P&S Stock : 33 Best Price : $1.15 Price Each : $1.62
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SPP07N60C3 Datasheet

Part Manufacturer Description PDF Type
SPP07N60C3 Infineon Technologies Cool MOS Power Amp., 650V 7.3A 83W, MOS-FET N-Channel enhanced Original
SPP07N60C3 Infineon Technologies Cool MOS Power Transistor Original
SPP07N60C3 Infineon Technologies CoolMOS Power MOSFET, 600V, TO-220, RDSon=0.60 ?, 7.3A Original

SPP07N60C3

Catalog Datasheet MFG & Type PDF Document Tags

07N60C3

Abstract: Preliminary data SPP07N60C3, SPB07N60C3 SPI07N60C3 Cool MOSâ"¢=Power Transistor = C , Package Ordering Code Marking SPP07N60C3 P-TO220-3-1 Q67040-S4422 07N60C3 SPB07N60C3 , Preliminary data SPP07N60C3, SPB07N60C3 SPI07N60C3 Thermal Characteristics Parameter Symbol , 2001-11-16 Preliminary data SPP07N60C3, SPB07N60C3 SPI07N60C3 Electrical Characteristics , at Tj = , while VDS is rising from 0 to 80% VDSS . Page 3 2001-11-16 Preliminary data SPP07N60C3
Infineon Technologies
Original
P-TO262-3-1 P-TO263-3-2 Q67040-S4394 Q67042-S4402

07N60C3 equivalent

Abstract: 07N60C3 Preliminary data SPP07N60C3, SPB07N60C3 SPI07N60C3 Cool MOSTM=Power Transistor = C OLMOS , operating temperature Type Package Ordering Code Marking SPP07N60C3 P-TO220 , 2001-06-18 Preliminary data SPP07N60C3, SPB07N60C3 SPI07N60C3 Thermal Characteristics Parameter , 2001-06-18 Preliminary data SPP07N60C3, SPB07N60C3 SPI07N60C3 Electrical Characteristics , at Tj = , rising from 0 to 80% VDSS . Page 3 2001-06-18 Preliminary data SPP07N60C3, SPB07N60C3
Infineon Technologies
Original
07N60C3 equivalent

07n60c3

Abstract: 07N60C3 equivalent SPP07N60C3 SPI07N60C3, SPA07N60C3 Cool MOSTM Power Transistor VDS @ Tjmax V RDS(on , SPP07N60C3 Package PG-TO220-3 Ordering Code Q67040-S4400 Marking 07N60C3 SPI07N60C3 , /dt Rev. 2.7 6) dv/dt Page 1 -55.+150 15 W °C V/ns 2005-09-14 SPP07N60C3 , =1MHz, open drain - 0.8 - Page 2 2005-09-14 SPP07N60C3 SPI07N60C3, SPA07N60C3 Electrical , switch. Rev. 2.7 Page 3 2005-09-14 SPP07N60C3 SPI07N60C3, SPA07N60C3 Electrical
Infineon Technologies
Original
PG-TO220-3-31 PG-TO220 to220 pcb footprint 07N60 TRANSISTOR SMD MARKING CODE G12 smd transistor marking br PG-TO262-3 P-TO220-3-31 PG-TO-220-3-31 Q67040-S4424

07N60C3

Abstract: PG-TO220-3-31 SPP07N60C3 SPI07N60C3, SPA07N60C3 Cool MOSTM Power Transistor Feature · New revolutionary high , isolated package (2500 VAC; 1 minute) Type SPP07N60C3 SPI07N60C3 SPA07N60C3 Package Ordering Code , Rev. 2.3 Page 1 T j , Tstg -55.+150 °C 2005-02-09 SPP07N60C3 SPI07N60C3, SPA07N60C3 , resistance RG f=1MHz, open drain Rev. 2.3 Page 2 2005-02-09 SPP07N60C3 SPI07N60C3 , 2005-02-09 SPP07N60C3 SPI07N60C3, SPA07N60C3 Electrical Characteristics Parameter Inverse diode
Infineon Technologies
Original
PG-TO262-3-1 PG-TO220-3-1 Q67040-S4409

07N60C3

Abstract: 07n60c Final data SPP07N60C3, SPB07N60C3 SPI07N60C3, SPA07N60C3 Cool MOSTM Power Transistor VDS , ) Type Package Ordering Code Marking SPP07N60C3 P-TO220-3-1 Q67040-S4422 07N60C3 , , di/dt=100A/µs, Tjmax =150°C Page 1 -55.+150 V W °C 2002-10-15 SPP07N60C3 , 2002-10-15 Final data SPP07N60C3, SPB07N60C3 SPI07N60C3, SPA07N60C3 Electrical Characteristics , SPP07N60C3, SPB07N60C3 SPI07N60C3, SPA07N60C3 Final data Electrical Characteristics Parameter Symbol
Infineon Technologies
Original
07n60c transistor 07n60c3 P-TO-220-3-31

07N60C3

Abstract: 07N60C3 equivalent SPP07N60C3 SPI07N60C3, SPA07N60C3 Cool MOSTM Power Transistor VDS @ Tjmax V RDS(on , ) Type SPP07N60C3 Package PG-TO220-3 Ordering Code Q67040-S4400 Marking 07N60C3 , /dt Rev. 3.1 6) dv/dt Page 1 -55.+150 15 W °C V/ns 2007-08-30 SPP07N60C3 , =1MHz, open drain - 0.8 - Page 2 2007-08-30 SPP07N60C3 SPI07N60C3, SPA07N60C3 Electrical , switch. Rev. 3.1 Page 3 2007-08-30 SPP07N60C3 SPI07N60C3, SPA07N60C3 Electrical
Infineon Technologies
Original
PG-TO220FP PG-TO262 SP000216303

SPI07N60C3 SMD

Abstract: SPP07N60C3 SPI07N60C3, SPA07N60C3 Cool MOSTM Power Transistor Feature · New revolutionary high , -220-3-31: Fully isolated package (2500 VAC; 1 minute) Type SPP07N60C3 Package PG-TO220 Ordering Code , SPP07N60C3 SPI07N60C3, SPA07N60C3 Maximum Ratings Parameter Symbol Value Unit Drain Source voltage slope , 2005-09-14 SPP07N60C3 SPI07N60C3, SPA07N60C3 Electrical Characteristics, at Tj = 25 °C, unless otherwise , high-side switch. Rev. 2.7 Page 3 2005-09-14 SPP07N60C3 SPI07N60C3, SPA07N60C3 Electrical
Infineon Technologies
Original
SPI07N60C3 SMD
Abstract: SPP07N60C3 SPI07N60C3, SPA07N60C3 Cool MOSâ"¢ Power Transistor VDS @ Tjmax 650 V RDS , VAC; 1 minute) Type SPP07N60C3 Package PG-TO220-3 Ordering Code Q67040-S4400 Marking , 2009-11-27 SPP07N60C3 SPI07N60C3, SPA07N60C3 Maximum Ratings Parameter Symbol Drain Source , 2009-11-27 SPP07N60C3 SPI07N60C3, SPA07N60C3 Electrical Characteristics, at Tj = 25 °C, unless , Page 3 2009-11-27 SPP07N60C3 SPI07N60C3, SPA07N60C3 Electrical Characteristics Symbol Infineon Technologies
Original
PG-TO220-3-21 PG-TO220-3-31/3-111 2500VAC PG-TO-262-3-1/PG-TO262-3-21 SPA07N60C

07n60c3

Abstract: SPP07N60C3 SPI07N60C3, SPA07N60C3 Cool MOSâ"¢ Power Transistor VDS @ Tjmax V RDS(on , VAC; 1 minute) Type SPP07N60C3 Package PG-TO220-3 Ordering Code Q67040-S4400 Marking , 2007-01-18 SPP07N60C3 SPI07N60C3, SPA07N60C3 Maximum Ratings Parameter Symbol Drain Source , 2007-01-18 SPP07N60C3 SPI07N60C3, SPA07N60C3 Electrical Characteristics, at Tj = 25 °C, unless , Page 3 2007-01-18 SPP07N60C3 SPI07N60C3, SPA07N60C3 Electrical Characteristics Symbol
Infineon Technologies
Original

smd diode marking G12

Abstract: SPA07N60C3 SPP07N60C3 SPI07N60C3, SPA07N60C3 Cool MOSTM Power Transistor Feature · New revolutionary high , -220-3-31: Fully isolated package (2500 VAC; 1 minute) Type SPP07N60C3 Package PG-TO220 Ordering Code , . 2.7 6) T j , Tstg dv/dt Page 1 -55.+150 15 °C V/ns 2005-09-14 SPP07N60C3 , ) Gate input resistance RG f=1MHz, open drain Rev. 2.7 Page 2 2005-09-14 SPP07N60C3 , . Rev. 2.7 Page 3 2005-09-14 SPP07N60C3 SPI07N60C3, SPA07N60C3 Electrical Characteristics
Infineon Technologies
Original
smd diode marking G12

07n60c3

Abstract: transistor 07n60c3 SPP07N60C3 SPI07N60C3, SPA07N60C3 Cool MOSTM Power Transistor VDS @ Tjmax V RDS(on , ) Type SPP07N60C3 Package PG-TO220-3 Ordering Code Q67040-S4400 Marking 07N60C3 , /dt Rev. 3.2 6) dv/dt Page 1 -55.+150 15 W °C V/ns 2009-11-27 SPP07N60C3 , =1MHz, open drain - 0.8 - Page 2 2009-11-27 SPP07N60C3 SPI07N60C3, SPA07N60C3 Electrical , switch. Rev. 3.2 Page 3 2009-11-27 SPP07N60C3 SPI07N60C3, SPA07N60C3 Electrical
Infineon Technologies
Original
SMD marking code 55A

07N60C3

Abstract: SPP07N60C3, SPB07N60C3 SPI07N60C3, SPA07N60C3 Cool MOSTM Power Transistor Feature · New , · P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute) Type SPP07N60C3 SPB07N60C3 , -55.+150 °C Rev. 2.2 Page 1 2004-09-07 SPP07N60C3, SPB07N60C3 SPI07N60C3, SPA07N60C3 , f=1MHz, open drain Rev. 2.2 Page 2 2004-09-07 SPP07N60C3, SPB07N60C3 SPI07N60C3 , 2004-09-07 SPP07N60C3, SPB07N60C3 SPI07N60C3, SPA07N60C3 Electrical Characteristics Parameter Inverse
Infineon Technologies
Original

07N60C3

Abstract: AN-TO220-3-31-01 Final data SPP07N60C3, SPB07N60C3 SPI07N60C3, SPA07N60C3 VDS @ Tjmax RDS(on) ID 650 0.6 7.3 V , -220-3-31: Fully isolated package (2500 VAC; 1 minute) Type SPP07N60C3 SPB07N60C3 SPI07N60C3 SPA07N60C3 Maximum , Maximum Ratings Parameter Drain Source voltage slope V DS = 480 V, I D = 7.3 A, Tj = 125 °C SPP07N60C3 , DS=0V to 480V SPP07N60C3, SPB07N60C3 SPI07N60C3, SPA07N60C3 Conditions min. V DS2*I D*RDS(on , 0.317 0.112 Tj P tot (t) C th1 C th2 C th,n SPP07N60C3, SPB07N60C3 SPI07N60C3, SPA07N60C3 Symbol
Infineon Technologies
Original
AN-TO220-3-31-01

07N60C3

Abstract: 07n60c Preliminary data SPP07N60C3, SPB07N60C3 SPI07N60C3 Cool MOSTM=Power Transistor Feature ·=New , 7.3 V A P-TO220-3-1 Type SPP07N60C3 SPB07N60C3 SPI07N60C3 Package P-TO220-3-1 P-TO263 , RthJA SPP07N60C3, SPB07N60C3 SPI07N60C3 Symbol min. - Values typ. 35 max. 1.5 62 62 0.66 260 , vertical without blown air. Page 2 2001-11-21 Preliminary data SPP07N60C3, SPB07N60C3 SPI07N60C3 , Page 3 2001-11-21 Preliminary data SPP07N60C3, SPB07N60C3 SPI07N60C3 Values min. typ. 1 400
Infineon Technologies
Original

07n60c3

Abstract: 07n60c SPP07N60C3, SPB07N60C3 SPI07N60C3, SPA07N60C3 Final data Cool MOSTM Power Transistor VDS , ) Type Package Ordering Code Marking SPP07N60C3 P-TO220-3-1 Q67040-S4422 07N60C3 , data SPP07N60C3, SPB07N60C3 SPI07N60C3, SPA07N60C3 Maximum Ratings Parameter Symbol Drain , =1MHz, open drain - 0.8 - Page 2 2003-09-16 Final data SPP07N60C3, SPB07N60C3 , is rising from 0 to 80% V DSS. Page 3 2003-09-16 SPP07N60C3, SPB07N60C3 SPI07N60C3
Infineon Technologies
Original
smd transistor marking G12

07n60c3

Abstract: 07N60C3 equivalent SPP07N60C3, SPB07N60C3 SPI07N60C3, SPA07N60C3 Cool MOSTM Power Transistor VDS @ Tjmax V , (2500 VAC; 1 minute) Type SPP07N60C3 Package P-TO220-3-1 Ordering Code Q67040-S4400 , 2004-04-07 SPP07N60C3, SPB07N60C3 SPI07N60C3, SPA07N60C3 Maximum Ratings Parameter Symbol Drain , - f=1MHz, open drain - 0.8 - Page 2 2004-04-07 SPP07N60C3, SPB07N60C3 , to 80% V DSS. Rev. 2.1 Page 3 2004-04-07 SPP07N60C3, SPB07N60C3 SPI07N60C3, SPA07N60C3
Infineon Technologies
Original
s4409

07N60C3

Abstract: 07n60c Final data SPP07N60C3, SPB07N60C3 SPI07N60C3, SPA07N60C3 VDS @ Tjmax RDS(on) ID 650 0.6 7.3 V , -220-3-31: Fully isolated package (2500 VAC; 1 minute) Type SPP07N60C3 SPB07N60C3 SPI07N60C3 SPA07N60C3 Maximum , Maximum Ratings Parameter Drain Source voltage slope VDS = 480 V, ID = 7.3 A, Tj = 125 °C SPP07N60C3 , 480V SPP07N60C3, SPB07N60C3 SPI07N60C3, SPA07N60C3 Conditions min. VDS2*ID*R DS(on)max, ID , SPP07N60C3, SPB07N60C3 SPI07N60C3, SPA07N60C3 Symbol IS I SM VSD t rr Q rr I rrm dirr /dt Conditions
Infineon Technologies
Original

07N60

Abstract: 07N60C3 Final data SPP07N60C3, SPB07N60C3 SPI07N60C3, SPA07N60C3 Cool MOSâ"¢ Power Transistor , -3-31 Type Package Ordering Code Marking SPP07N60C3 P-TO220-3-1 Q67040-S4422 07N60C3 , , di/dt=100A/µs, Tjmax =150°C Page 1 -55.+150 V W °C 2002-08-09 SPP07N60C3 , Page 2 2002-08-09 Final data SPP07N60C3, SPB07N60C3 SPI07N60C3, SPA07N60C3 Electrical , 2002-08-09 SPP07N60C3, SPB07N60C3 SPI07N60C3, SPA07N60C3 Final data Electrical Characteristics
Infineon Technologies
Original

07n60c3

Abstract: 07N60C3 SMD Preliminary data SPP07N60C3, SPB07N60C3 SPI07N60C3, SPA07N60C3 Cool MOSTM Power Transistor , -3-31 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 Type SPP07N60C3 SPB07N60C3 SPI07N60C3 SPA07N60C3 Maximum , dissipation Ptot = f (TC ) 100 SPP07N60C3 2 Power dissiaption FullPAK Ptot = f (TC ) 35 W W 80 70 , RDS(on) = f (Tj ) parameter : ID = 4.6 A, VGS = 10 V 3.4 SPP07N60C3 8 4V 4.5V 2.8 , 7.3 A pulsed 16 SPP07N60C3 A V 20 18 25°C 12 VGS ID 16 14 12 10 150°C 10 0
Infineon Technologies
Original
07N60C3 SMD
Abstract: Preliminary data SPP07N60C3, SPB07N60C3 SPI07N60C3, SPA07N60C3 Cool MOSâ"¢=Power Transistor , 3 P-TO220-3-31 Type SPP07N60C3 Package P-TO220-3-1 Ordering Code Q67040-S4422 , SPP07N60C3 35 W W 80 25 P tot Ptot 70 60 20 50 15 40 30 10 20 5 10 0 , V 10 â"¦ 3.4 4.5V 2.8 RDS(on) RDS(on) â"¦ 4V 8 SPP07N60C3 7 5V , f (VSD ) parameter: ID = 7.3 A pulsed parameter: Tj , tp = 10 µs 16 10 2 SPP07N60C3 Infineon Technologies
Original

SPN04N60C2

Abstract: smps* ZVT SPP07N60C3 SPP07N60C2 SPP07N60S5 SPA07N60C3 SPA07N60C2 SPI07N60C3 SPI07N60S5 0.38 11 A , 5 and Step 6. Step 3 (second iteration): We choose SPP07N60C3. Step 4 (second iteration): Our , SPP07N60C3 selected in Step 3 has approximately 1.2 on state resistance at junction temperature of 110 , RthCA = 40 K/W. The thermal resistance junction to case of the SPP07N60C3 is: RthJC = 1.5 K/W. The , maximum allowable power dissipation (Step 5). The SPP07N60C3 is still not the right choice
Infineon Technologies
Original
SPN04N60C2 smps* ZVT spp20n60 spp20n60c3 infineon mtbf SPD01N60S5 MOS-03 2002-S
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