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SPP02N80C3XKSA1 Infineon Technologies AG Power Field-Effect Transistor, 2A I(D), 800V, 2.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, PLASTIC, TO-220, 3 PIN visit Digikey Buy

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Part : SPP02N80C3 Supplier : Infineon Technologies Manufacturer : Avnet Stock : 500 Best Price : €0.4105 Price Each : €0.6903
Part : SPP02N80C3 Supplier : Infineon Technologies Manufacturer : Avnet Stock : 2,500 Best Price : $0.3792 Price Each : $0.4226
Part : SPP02N80C3 Supplier : Infineon Technologies Manufacturer : Avnet Stock : - Best Price : €0.3975 Price Each : €0.6951
Part : SPP02N80C3XK Supplier : Infineon Technologies Manufacturer : Avnet Stock : - Best Price : $0.3759 Price Each : $0.4287
Part : SPP02N80C3XKSA1 Supplier : Infineon Technologies Manufacturer : Newark element14 Stock : 184 Best Price : $0.30 Price Each : $0.98
Part : SPP02N80C3 Supplier : Infineon Technologies Manufacturer : Rochester Electronics Stock : 19,229 Best Price : $0.44 Price Each : $0.54
Part : SPP02N80C3 Supplier : Infineon Technologies Manufacturer : RS Components Stock : 190 Best Price : £0.4120 Price Each : £0.5950
Part : SPP02N80C3 Supplier : Infineon Technologies Manufacturer : TME Electronic Components Stock : 179 Best Price : $0.5831 Price Each : $0.9393
Part : SPP02N80C3XKSA1 Supplier : Infineon Technologies Manufacturer : element14 Asia-Pacific Stock : 184 Best Price : $0.50 Price Each : $1.2720
Part : SPP02N80C3XKSA1 Supplier : Infineon Technologies Manufacturer : Farnell element14 Stock : 372 Best Price : £0.3880 Price Each : £0.7690
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SPP02N80C3 Datasheet

Part Manufacturer Description PDF Type
SPP02N80C3 Infineon Technologies N-Channel MOSFETs (>500V - 900V); Package: PG-TO220-3; V<sub>DS</sub> (max): 800.0 V; Package: TO-220; R<sub>DS(ON)</sub> @ T<sub>J</sub>=25°C V<sub>GS</sub>=10: 2,700.0 mOhm; I<sub>D(max)</sub> @ T<sub>C</sub>=25°C: 2.0 A; I<sub>Dpuls</sub> (max): 6.0 A; Original
SPP02N80C3 Infineon Technologies Cool MOS Power Transistor Original
SPP02N80C3 Infineon Technologies Cool MOS Power Transistor Original

SPP02N80C3

Catalog Datasheet MFG & Type PDF Document Tags

02N80C3

Abstract: Q67040-S4432 SPP02N80C3 SPA02N80C3 Final data Cool MOSTM Power Transistor VDS 2.7 ID · , Ordering Code Marking SPP02N80C3 P-TO220-3-1 Q67040-S4432 02N80C3 SPA02N80C3 P-TO220 , W °C 2003-10-14 SPP02N80C3 SPA02N80C3 Final data Maximum Ratings Parameter Symbol , =1MHz, open drain - 0.7 - Page 2 2003-10-14 SPP02N80C3 SPA02N80C3 Final data , 2003-10-14 SPP02N80C3 SPA02N80C3 Final data Electrical Characteristics Parameter Symbol
Infineon Technologies
Original
02N8 P-TO220-3-31 P-TO-220-3-31 Q67040S4634

MAX7523

Abstract: 02N80C3 Preliminary data SPP02N80C3 Cool MOSTM Power Transistor Feature · New revolutionary high , Summary VDS RDS(on) ID 800 2.7 2 P-TO220-3-1 V A Type SPP02N80C3 Package P-TO220 , breakdown voltage VGS =0V, ID =0.25mA SPP02N80C3 Symbol min. RthJC RthJA Tsold - Values typ. 0.3 , to 10V VDD =640V, ID =2A SPP02N80C3 Symbol Conditions min. Values typ. 1.5 290 130 6 11.2 , =100A/µs SPP02N80C3 Symbol Conditions min. Values typ. 1 520 2 6 200 max. 2 6 1.2 - Unit
Infineon Technologies
Original
MAX7523

02N80C3

Abstract: Preliminary data SPP02N80C3 Cool MOSTM=Power Transistor Feature ·=New revolutionary high , Power Semiconductors Product Summary VDS RDS(on) ID 800 2.7 2 P-TO220-3-1 V A Type SPP02N80C3 , specified Static Characteristics Drain-source breakdown voltage VGS =0V, ID =0.25mA SPP02N80C3 Symbol , =640V, ID =2A, VGS =0 to 10V VDD =640V, ID =2A SPP02N80C3 Symbol Conditions min. Values typ , F=I S , diF/dt=100A/µs SPP02N80C3 Symbol Conditions min. Values typ. 1 520 2 6 200 max. 2
Infineon Technologies
Original

C2625

Abstract: 02N80C3 SPP02N80C3 CoolMOSTM Power Transistor Features · New revolutionary high voltage technology · , clamp forward ) Type SPP02N80C3 Package PG-TO220-3 Marking 02N80C3 Maximum ratings, at T j , Unit A page 1 SPP02N80C3 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter , Rev. 2.91 page 2 2011-09-28 SPP02N80C3 Parameter Symbol Conditions min. Dynamic , page 3 2011-09-28 SPP02N80C3 1 Power dissipation P tot=f(T C) 2 Safe operating area I D=f(V DS
Infineon Technologies
Original
C2625

02N80C3

Abstract: 02N8 SPP02N80C3 CoolMOSTM Power Transistor Product Summary Features V DS 2.7 Q g , · Switching Application ( i.e. active clamp forward ) Type Package Marking SPP02N80C3 , 2008-10-15 SPP02N80C3 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous , Gate resistance Rev. 2.9 RG page 2 2008-10-15 SPP02N80C3 Parameter Values , DS is rising from 0 to 80% V DSS. Rev. 2.9 page 3 2008-10-15 SPP02N80C3 1 Power
Infineon Technologies
Original
JESD22
Abstract: Final data SPP02N80C3 Cool MOSTM Power Transistor Feature · New revolutionary high voltage , (on) ID 800 2.7 2 P-TO220-3-1 V A Type SPP02N80C3 Package P-TO220-3-1 Ordering Code , breakdown voltage VGS =0V, ID =0.25mA SPP02N80C3 Symbol min. RthJC RthJA Tsold - Values typ. 0.3 , =2A SPP02N80C3 Symbol Conditions min. Values typ. 1.5 290 130 6 11.2 20.6 25 15 65 18 max , trr Qrr Irrm dirr /dt V GS=0V, I F=IS V R=640V, I F=I S , diF/dt=100A/µs SPP02N80C3 Symbol Infineon Technologies
Original

02N80C3

Abstract: SPP02N80C3 SPP02N80C3 Final data Cool MOSTM Power Transistor VDS · Ultra low gate charge 2.7 , Marking SPP02N80C3 P-TO220-3-1 Q67040-S4432 02N80C3 Maximum Ratings, at TC = 25°C, unless , =50V Avalanche energy, repetitive tAR limited by Tjmax1) ID=2A, V DD=50V Page 1 2003-07-02 SPP02N80C3 , SPP02N80C3 Final data Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter , SPP02N80C3 Final data Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter
Infineon Technologies
Original

STR-G6551

Abstract: STR-F6654 6.2 1.2 D2-PAK SPB03N60C3 IRFBE20 800 1.8 6.5 TO-220 SPP02N80C3 IRFBE30 800 4.1 3 TO-220 SPP02N80C3 IRFD420 500 0.46 3 HEXDIP SPP02N60C3 , 1.4 6.5 TO-220FP SPP02N80C3 IRFIBE30G 800 2.1 3 TO-220FP SPP02N80C3 , -247 SPP02N80C3 IRFPE40 800 5.4 2 TO-247 SPP04N80C3 IRFPE50 800 7.8 1.2 TO , SPB03N60C3 STB6NC60 600 6.2 1.2 D2-PAK 2 SPB20N60C3 SPP02N80C3 SPB03N60C3
Infineon Technologies
Original
STR-G6551 STR-F6654 g6551 TDA16822 STR-F6653 strg6551 2002-S P-DSO14/16 P-TO-220

SPA02N80C3

Abstract: 2007-08-30 Rev. 2.6 P 2007-08-30 SPP02N80C3 SPA02N80C3 PG-TO220-3-1, PG-TO220-3-21 Rev. 2.6 Page 11 2007-08-30 SPP02N80C3 SPA02N80C3 PG-TO220-3-31 (FullPAK) Rev. 2.6 Page
Infineon Technologies
Original
SP000216295
Abstract: P 2005-08-24 Rev. 2.4 P 2005-08-24 SPP02N80C3 SPA02N80C3 PG-TO220-3-1, PG-TO220-3-21 Rev. 2.3 Page 11 2005-06-09 SPP02N80C3 SPA02N80C3 PG-TO220-3-31 (FullPAK) Rev. 2.4 Infineon Technologies
Original
Abstract: SPP02N80C3 CoolMOSTM Power Transistor Product Summary Features V DS 2.7 â"¦ Q g,typ â'¢ Extreme dv/dt rated V R DS(on)max @ Tj = 25° C â'¢ New revolutionary high voltage technology 800 12 nC â'¢ High peak current capability â'¢ Qualified according to JEDEC1) for target applications PG-TO220-3 â'¢ Pb-free lead plating; RoHS compliant â'¢ Ultra low , Package Marking SPP02N80C3 PG-TO220-3 02N80C3 Maximum ratings, at T j=25 ° unless Infineon Technologies
Original

6331

Abstract: SPP02N80C3 SPA02N80C3 PG-TO-220-3-1 Rev. 2.3 Page 11 2005-06-09 SPP02N80C3 SPA02N80C3 PG-TO
Infineon Technologies
Original
6331 RRO026 3G721 PG-TO-220-3-31

TDA 16822

Abstract: 04N60C3 equivalent ] Type 1.3 2.1.3.9 4 20 SPP04N80C3 2.7 2.1.3.9 2 9 SPP02N80C3 0.29 , /B07N60C3 SPP/B07N60S5 SPP/B11N60C3 SPP/B11N60S5 SPP/B17N80C3 SPP/B20N60C3 SPP/B21N50C3 SPP02N80C3
Infineon Technologies
Original
TDA 16822 04N60C3 equivalent ICE1QS01 equivalent 07N60C3 mosfet transistor tda 3050 1QS01 B152-H8202-X-X-7600

transistor SMD 12W MOSFET

Abstract: transistor SMD 12W : "SPP02N80C3" 800V CoolMOSTM Transistor; Datasheet; Munich; Germany; 07/2003 http://www.infineon.com/cgi
Infineon Technologies
Original
ICE2B265 ICE1B265 transistor SMD 12W MOSFET transistor SMD 12W SMD Code 12W SOT23 ICE2B265 Application Note AN-EvalMF2-ICE2A0565Z-1 SPA02N80

transistor SMD 12W MOSFET

Abstract: SMD Code 12W SOT23 =26910&cat_oid=-8179 [2] Infineon Technologies AG: "SPP02N80C3" 800V CoolMOSTM Transistor; Datasheet; Munich; Germany
Infineon Technologies
Original
smd transistor code 12w HV cascode smps SPA02N60-C3 ICE2B265 equivalent smd transistor 12W 52 12W Sot23

Buck-Boost Converter advantages

Abstract: SPA11N80C3 2.1 . 3.9 4 20 SPP04N80C3 2.7 2.1 . 3.9 2 9 SPP02N80C3 0.29 2.1 . , SPN03N60S5 SPN04N60S5 SPP02N60C3 SPP02N60S5 SPP02N80C3 SPP03N60C3 SPP03N60S5 SPP04N50C3 SPP04N60C3
Infineon Technologies
Original
Buck-Boost Converter advantages SPA11N80C3 ice1qs02 CoolMOS Power Transistor tda16846 tda4605 application note B152-H8202-G4-X-7600

ICE3B0365J

Abstract: ICE2A765P2 1.3 4A 20nC SPP02N80C3 2.7 2A 9nC SPA02N80C3 2.7 2A 9nC IPW90R120C3 120m 36A 260nC
Infineon Technologies
Original
ICE3B0365J ICE2A765P2 ICE3BR4765J TDA16888 ICE1PCS02G ICE2PCS01G SPP21N50C3 SPA21N50C3 SPI21N50C3 SPP16N50C3 SPA16N50C3 SPI16N50C3

SSH6N80

Abstract: ptc6063 equivalent MBRS540T3 MSR1560 MUR160 MURA160T3 MJE172G SPP02N80C3 SPP11N80C3 STP20NM60 _ NTP65N02R MMBT2907A
-
Original
SSH6N80 ptc6063 equivalent MTW15N25E NTE2393 SPA08N80C3 NTE99 MTM8N55 MTM8N60 MTM8N40 MTP10N10 MTP10N25 SSH5N90

PS224

Abstract: ic PS224 SPP04n80c3 coolMoStMc3 2700 2.1 . 3.9 2 9 SPP02n80c3 coolMoStMc3 340 2.5 . 3.5
ON Semiconductor
Original
PS224 ic PS224 optocoupler atx power supply schematic ferrite transformer power for power supply atx PS224 ic datasheet EROS2CHF TND313/D
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