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SPA11N60C3XKSA1 Infineon Technologies AG Power Field-Effect Transistor, 11A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220FP, 3 PIN visit Digikey Buy

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Part : SPA11N60C3 Supplier : Infineon Technologies Manufacturer : Avnet Stock : 1,000 Best Price : €1.1742 Price Each : €2.0455
Part : SPA11N60C3 Supplier : Infineon Technologies Manufacturer : Avnet Stock : - Best Price : $1.2208 Price Each : $1.3603
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Part : SPA11N60C3XKSA1 Supplier : Infineon Technologies Manufacturer : Avnet Stock : 15,463 Best Price : $1.20 Price Each : $2.80
Part : SPA11N60C3XKSA1 Supplier : Infineon Technologies Manufacturer : Newark element14 Stock : 138 Best Price : $1.20 Price Each : $2.80
Part : SPA11N60C3XKSA1 Supplier : Infineon Technologies Manufacturer : Future Electronics Stock : 500 Best Price : $1.73 Price Each : $1.73
Part : SPA11N60C3 Supplier : Infineon Technologies Manufacturer : Rochester Electronics Stock : 98 Best Price : $1.40 Price Each : $1.72
Part : SPA11N60C3 Supplier : Infineon Technologies Manufacturer : RS Components Stock : 122 Best Price : £1.58 Price Each : £2.5250
Part : SPA11N60C3 Supplier : Infineon Technologies Manufacturer : RS Components Stock : 396 Best Price : £1.58 Price Each : £2.1550
Part : SPA11N60C3 Supplier : Infineon Technologies Manufacturer : Chip One Exchange Stock : 15,000 Best Price : - Price Each : -
Part : SPA11N60C3 Supplier : Infineon Technologies Manufacturer : Chip1Stop Stock : 500 Best Price : $0.98 Price Each : $2.02
Part : SPA11N60C3XK Supplier : Infineon Technologies Manufacturer : Chip1Stop Stock : 2,500 Best Price : $4.38 Price Each : $4.38
Part : SPA11N60C3XKSA1 Supplier : Infineon Technologies Manufacturer : Chip1Stop Stock : 500 Best Price : $1.4920 Price Each : $2.8280
Part : SPA11N60C3XKSA1 Supplier : Infineon Technologies Manufacturer : element14 Asia-Pacific Stock : 75 Best Price : $1.53 Price Each : $3.5920
Part : SPA11N60C3XKSA1 Supplier : Infineon Technologies Manufacturer : Farnell element14 Stock : 97 Best Price : £1.11 Price Each : £2.43
Part : SPA11N60C3 Supplier : Infineon Technologies Manufacturer : Wuhan P&S Stock : 100 Best Price : $1.64 Price Each : $2.30
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SPA11N60C3 Datasheet

Part Manufacturer Description PDF Type
SPA11N60C3 Infineon Technologies N-Channel MOSFETs (>500V - 900V); Package: PG-TO220-3; V<sub>DS</sub> (max): 600.0 V; Package: TO-220 FullPAK; R<sub>DS(ON)</sub> @ T<sub>J</sub>=25°C V<sub>GS</sub>=10: 380.0 mOhm; I<sub>D(max)</sub> @ T<sub>C</sub>=25°C: 11.0 A; I<sub>Dpuls</sub> (max): 33.0 A; Original
SPA11N60C3 Infineon Technologies Cool MOS Power Amp., 650V 11A 33W, MOS-FET N-Channel enhanced Original
SPA11N60C3 Infineon Technologies CoolMOS Power MOSFET, 600V, TO-220FP, RDSon=0.38 ?, 5.5A Original
SPA11N60C3 Infineon Technologies Cool MOS Power Transistor Original
SPA11N60C3E8152 Infineon Technologies Transistor Mosfet N-CH 600V 0.021A 3 pin SOT-23 T/R Original

SPA11N60C3

Catalog Datasheet MFG & Type PDF Document Tags

11n60c3

Abstract: 11N60C Q67042-S4403 11N60C3 Q67040-S4408 11N60C3 SPA11N60C3 PG-TO220FP 11N60C3 SPA11N60C3E8185 , SPP11N60C3 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 Cool MOSTM Power Transistor VDS @ Tjmax , SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 Maximum Ratings Parameter Symbol Drain Source voltage slope , f=1MHz, open drain - 0.86 - Page 2 2007-08-30 SPP11N60C3 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 Electrical Characteristics Parameter Symbol Conditions Values Unit min
Infineon Technologies
Original
Q67040-S4395 11N60C SPA11N60C3 equivalent 11N60 SPD06S60 transistor 11n60c3 PG-TO-220-3-1 PG-TO262 PG-TO220 P-TO220-3-31 PG-TO-220-3-31

11n60c3

Abstract: SPA11N60C3 SPP11N60C3 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 Cool MOSTM Power Transistor Feature · New , VAC; 1 minute) Type SPP11N60C3 SPI11N60C3 SPA11N60C3 Package PG-TO220 PG-TO262 PG-TO220FP Ordering Code Q67040-S4395 Q67042-S4403 Q67040-S4408 Marking 11N60C3 11N60C3 11N60C3 SPA11N60C3E8185 , temperature Reverse diode dv/dt 7) Rev. 2.9 -55.+150 2007-01-17 SPP11N60C3 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 Maximum Ratings Parameter Drain Source voltage slope VDS = 480 V, ID = 11 A, Tj = 125 °C
Infineon Technologies
Original

SP000216312

Abstract: 11N6 SPP11N60C3 SPI11N60C3, SPA11N60C3 Cool MOSTM Power Transistor Feature · New revolutionary high , ) Type SPP11N60C3 SPI11N60C3 SPA11N60C3 Package PG-TO220 PG-TO262-3 Ordering Code Q67040-S4395 , -55.+150 2005-09-21 SPP11N60C3 SPI11N60C3, SPA11N60C3 Maximum Ratings Parameter Drain Source , SPI11N60C3, SPA11N60C3 Electrical Characteristics Parameter Transconductance Input capacitance Output , SPP11N60C3 SPI11N60C3, SPA11N60C3 Electrical Characteristics Parameter Inverse diode continuous forward
Infineon Technologies
Original
SP000216312 11N6 PG-TO220-3-31

11n60c3

Abstract: transistor 11n60c3 SPP11N60C3, SPB11N60C3 SPI11N60C3, SPA11N60C3 Final data Cool MOSTM Power Transistor VDS , SPA11N60C3 P-TO220-3-31 Q67040-S4408 11N60C3 Maximum Ratings Parameter Symbol Value SPP_B , SPP11N60C3, SPB11N60C3 SPI11N60C3, SPA11N60C3 Maximum Ratings Parameter Symbol Drain Source , , SPB11N60C3 SPI11N60C3, SPA11N60C3 Electrical Characteristics Parameter Symbol Conditions Values , rising from 0 to 80% VDSS. Page 3 2003-07-01 SPP11N60C3, SPB11N60C3 SPI11N60C3, SPA11N60C3
Infineon Technologies
Original
P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 P-TO-220-3-31 Q67040-S4396

11n60c3

Abstract: SPP11N60C3 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 Cool MOSâ"¢ Power Transistor VDS @ Tjmax , PG-TO262 Q67042-S4403 11N60C3 Q67040-S4408 11N60C3 SPA11N60C3 PG-TO220FP 11N60C3 SPA11N60C3E8185 PG-TO220 Maximum Ratings Parameter Symbol Value SPA SPP_I Continuous drain , 2012-10-16 SPP11N60C3 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 Maximum Ratings Parameter Symbol , 2012-10-16 SPP11N60C3 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 Electrical Characteristics Parameter
Infineon Technologies
Original
PG-TO-220-3-21 PG-TO-220-3-31/3-111 2500VAC

11N60C

Abstract: Q67040-S4408 Preliminary data SPA11N60C3 Cool MOSTM=Power Transistor Feature ·=New revolutionary high , -3-31 2 3 Type SPA11N60C3 Package Ordering Code Marking 11N60C3 P-TO220 , Characteristics Drain-source breakdown voltage VGS =0V, ID =0.25mA SPA11N60C3 Symbol min. RthJC RthJA Tsold , , ID =5.5A SPA11N60C3 Symbol Conditions min. Values typ. 8.3 1460 610 21 45 85 10 5 44 5 , =100A/µs SPA11N60C3 Symbol Conditions min. Values typ. 1 400 6 41 1200 max. 5.5 33 1.2 600 -
Infineon Technologies
Original
AR1010

SPA11N60C3

Abstract: SPA11N60C3 application note SPA11N60C3 Preliminary data Cool MOSTM=Power Transistor = C OLMOS O Power , -3-31 Type Package Ordering Code SPA11N60C3 P-TO220-3-31 Q67040-S4408 Marking 11N60C3 , SPA11N60C3 Preliminary data Thermal Characteristics Parameter Symbol Values Unit min. typ , Page 2 2001-07-05 SPA11N60C3 Preliminary data Electrical Characteristics , at Tj = 25 °C , 80% VDSS . Page 3 2001-07-05 SPA11N60C3 Preliminary data Electrical Characteristics, at
Infineon Technologies
Original
SPA11N60C3 application note AN-TO220-3-31-01 GPT09301 SDP06S60

11n60c3

Abstract: transistor 11n60c3 SPP11N60C3 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 Cool MOSTM Power Transistor Feature · New , VAC; 1 minute) Type SPP11N60C3 SPI11N60C3 SPA11N60C3 Package PG-TO220 PG-TO262 PG-TO220FP , SPA11N60C3E8185 PG-TO220 11N60C3 Maximum Ratings Parameter Continuous drain current TC = 25 °C TC = 100 °C , 2012-10-16 SPP11N60C3 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 Maximum Ratings Parameter Drain Source , SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 Electrical Characteristics Parameter Transconductance Input
Infineon Technologies
Original

11n60c3

Abstract: SPA11N60C3E8185 Q67042-S4403 11N60C3 Q67040-S4408 11N60C3 SPA11N60C3 PG-TO220FP 11N60C3 SPA11N60C3E8185 , SPP11N60C3 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 Cool MOSTM Power Transistor VDS @ Tjmax , SPP11N60C3 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 Maximum Ratings Parameter Symbol Drain Source , 2009-11-27 SPP11N60C3 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 Electrical Characteristics Parameter , SPP11N60C3 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 Electrical Characteristics Symbol Parameter
Infineon Technologies
Original

SPP11N60C3

Abstract: transistor 11n60c3 SPP11N60C3 SPI11N60C3, SPA11N60C3 Cool MOSTM Power Transistor Feature · New revolutionary high , ; 1 minute) Type SPP11N60C3 SPI11N60C3 SPA11N60C3 Package Ordering Code Marking 11N60C3 , SPP11N60C3 SPI11N60C3, SPA11N60C3 Maximum Ratings Parameter Drain Source voltage slope VDS = 480 V, ID = 11 , , SPA11N60C3 Electrical Characteristics Parameter Transconductance Input capacitance Output capacitance , , SPA11N60C3 Electrical Characteristics Parameter Inverse diode continuous forward current Inverse diode
Infineon Technologies
Original
PG-TO262-3-1 PG-TO220-3-1

11N60C3

Abstract: transistor 11n60c3 SPP11N60C3, SPB11N60C3 SPI11N60C3, SPA11N60C3 Cool MOSTM Power Transistor Feature · New , isolated package (2500 VAC; 1 minute) Type SPP11N60C3 SPB11N60C3 SPI11N60C3 SPA11N60C3 Maximum Ratings , , SPB11N60C3 SPI11N60C3, SPA11N60C3 Maximum Ratings Parameter Drain Source voltage slope VDS = 480 V, ID = 11 , drain Rev.2.1 Page 2 2004-09-07 SPP11N60C3, SPB11N60C3 SPI11N60C3, SPA11N60C3 Electrical , , SPA11N60C3 Electrical Characteristics Parameter Inverse diode continuous forward current Inverse diode
Infineon Technologies
Original

to220 pcb footprint

Abstract: 11n60c3 SPP11N60C3 SPI11N60C3, SPA11N60C3 Cool MOSTM Power Transistor VDS @ Tjmax 650 V RDS , 11N60C3 SPA11N60C3 PG-TO220-3-31 SP000216312 11N60C3 Maximum Ratings Parameter Symbol , W °C V/ns 2005-09-21 SPP11N60C3 SPI11N60C3, SPA11N60C3 Maximum Ratings Parameter , 2005-09-21 SPP11N60C3 SPI11N60C3, SPA11N60C3 Electrical Characteristics Parameter Symbol , SPP11N60C3 SPI11N60C3, SPA11N60C3 Electrical Characteristics Symbol Parameter Conditions Values
Infineon Technologies
Original
PG-TO220-3 to220 pcb footprint TRANSISTOR SMD MARKING CODE 7A TO220 HEATSINK DATASHEET to262 pcb footprint SMD TRANSISTOR MARKING code TC

11n60c3

Abstract: transistor 11n60c3 Final data SPP11N60C3, SPB11N60C3 SPI11N60C3, SPA11N60C3 Cool MOSTM Power Transistor VDS , SPA11N60C3 P-TO220-3-31 Q67040-S4408 11N60C3 Maximum Ratings Parameter Symbol Value SPP_B_I , SPI11N60C3, SPA11N60C3 Final data Thermal Characteristics Parameter Symbol Values Unit min , Final data SPP11N60C3, SPB11N60C3 SPI11N60C3, SPA11N60C3 Electrical Characteristics Parameter , , SPB11N60C3 SPI11N60C3, SPA11N60C3 Final data Electrical Characteristics Parameter Symbol
Infineon Technologies
Original

BUZ78

Abstract: SIPC69N60C3 SPI07N60C3 SPB11N60C3 SPA11N60C3 SPA20N60C3 SIPC06N60C3 SIPC69N60C3 SPP04N80C3 SPU06N80C3 SPP11N80C3
Infineon Technologies
Original
BTS443P SPNA2N80C2 SPP08N80C3 BTS840S2 BTS118D SIPC05N60C3 BUZ78 sipc01n80c2 P-Channel Depletion Mosfets buz22 SIPC26N60C3 BTS308 BTS409 BTS410-H2 BTS640S2 BTS650P

11N60C3

Abstract: transistor 11n60c3 Preliminary data SPP11N60C3, SPB11N60C3 SPI11N60C3, SPA11N60C3 Cool MOSTM Power Transistor Feature · New revolutionary high voltage technology · Ultra low gate charge · Periodic avalanche rated · Extreme dv/dt rated · High peak current capability · Improved transconductance · 150 °C operating temperature P-TO220-3-31 1 2 3 Product Summary VDS @ Tjmax 650 RDS(on) ID 0.38 11 V A P-TO220-3-31 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 Type SPP11N60C3 SPB11N60C3 SPI11N60C3 SPA11N60C3 Maximum
Infineon Technologies
Original

11N60C3

Abstract: transistor 11n60c3 Preliminary data SPP11N60C3, SPB11N60C3 SPI11N60C3, SPA11N60C3 Cool MOSTM Power Transistor Feature · New revolutionary high voltage technology Product Summary VDS @ Tjmax 650 V · Ultra low gate charge RDS(on) 0.38 11 A · Periodic avalanche rated ID · Extreme dv/dt rated · High peak current capability P-TO220-3-31 P-TO262-3-1 P-TO263-3-2 P-TO220 , SPA11N60C3 P-TO220-3-31 Q67040-S4408 11N60C3 Maximum Ratings Parameter Symbol Value SPP_B_I
Infineon Technologies
Original
diode marking 1200

SIPC69N60C3

Abstract: SPW20N60S5 equivalent SPD03N60C3 SPB04N60C3 SPN04N60C3 SPI07N60C3 SPB11N60C3 SPA11N60C3 SPA20N60C3 SIPC06N60C3 SIPC69N60C3
Infineon Technologies
Original
BTS555 SIPC30S2N08 BSP229 SKP15N60 BUP314 SPW20N60S5 equivalent BUZ78 equivalent SIPC26N80C3 SDP04S60 SDB10S30 BTS550P BTS114A BSP78
Abstract: Preliminary data SPP11N60C3, SPB11N60C3 SPI11N60C3, SPA11N60C3 Cool MOSâ"¢=Power Transistor = Feature â'¢=New revolutionary high voltage technology Product Summary VDS @ Tjmax 650 V â'¢ Ultra low gate charge R DS(on) 0.38 â"¦ â'¢=Periodic avalanche rated ID 11 A â'¢ Extreme dv/dt rated â'¢=High peak current capability P-TO220-3-31 P-TO262 , -3-1 Q67042-S4403 11N60C3 SPA11N60C3 P-TO220-3-31 Q67040-S4408 11N60C3 Maximum Ratings Parameter Infineon Technologies
Original

SIPC69N60C3

Abstract: sipc01n80c2 11 SPA11N60C3 SPB11N60C3 1 SPI11N60C3 SPP11N60C3 1 SPW11N60C3 1 SIPC14N60C3 20
Infineon Technologies
Original
SIPC10N60C3 SIPC07N80C3 SPB08N80C3 SIPC16N80C3 SPA03N60S5 SPP11N60S5 equivalent CoolMOS Power Transistor SPD01N60S5 N60C2 SIPC14N60C2 SPA20N60C2 SPB20N60C2 SPP20N60C2 SPW20N60C2

STR-G6551

Abstract: STR-F6654 -220FP SPA11N60C3 STP20NM50 500 20 0.23 TO-220 SPP20N60C3 STP20NM60 600 20 0.25 TO , MAX-220I SPA11N60C3 STU13NB60 600 12.6 0.45 MAX-220 SPP11N60C3 STU13NB60I 600 12.6 0.45 MAX-220I SPA11N60C3 STU13NC50 500 13 0.4 MAX , MAX-220I SPA11N60C3 STU16NC50 500 16 0.27 MAX-220 SPP20N60C3 STU26NM50 500 , -3PIS SPA11N60C3 2SK1721 500 3 3 TO-220FL/SM SPB02N60C3 2SK1722 500 5 1.5 TO-220FL/SM
Infineon Technologies
Original
STR-G6551 STR-F6654 g6551 TDA16822 STR-F6653 strg6551 2002-S P-DSO14/16 P-TO-220
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