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HIP2100EIBT Intersil Corporation 2A HALF BRDG BASED MOSFET DRIVER, PDSO8, PLASTIC, EPSOIC-8 visit Intersil
HIP6601BCBZA-T Intersil Corporation Synchronous Rectified Buck MOSFET Drivers; SOIC8; Temp Range: 0° to 70° visit Intersil Buy
ISL6596CRZ-T Intersil Corporation Synchronous Rectified MOSFET Driver; DFN10; Temp Range: See Datasheet visit Intersil Buy
ISL6605CBZ-T Intersil Corporation Synchronous Rectified MOSFET Driver; QFN8, SOIC8; Temp Range: See Datasheet visit Intersil Buy
ISL6609AIBZ-T Intersil Corporation Synchronous Rectified MOSFET Driver; QFN8, SOIC8; Temp Range: See Datasheet visit Intersil Buy
ISL6609CRZ-T Intersil Corporation Synchronous Rectified MOSFET Driver; QFN8, SOIC8; Temp Range: See Datasheet visit Intersil Buy

SOT323 MOSFET P

Catalog Datasheet MFG & Type PDF Document Tags

MMBD2103

Abstract: ZENER DIODE t2d modamp mosfet n-ch npn o/p p-ch pin pkg pnp prot res s ser Si substr sw Vce Vcc junction field effect , Equivalent/Data varicap 3 pin diodes P-ch mosfet 60V 180mA 3 pin diodes pi atten n-ch jfet ultra low i/p Ig , devices with the same ID code. This compilation has been collected from R P Blackwell G4PMK, manufacturers , sometimes have a lower case 'p' (or sometimes 't') added to the code; Siemens devices usually have a lower , IR F n-ch mosfet 20V 0.9A This has been a problem in the past, however recently manufacturers have
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MMBD2104

Abstract: Transistor NEC 05F The Surface Mount Device Code Book © R P Blackwell G4PMK A marsport publication! Introduction , lower case 'p' (or sometimes 't')added to the code; Siemens devices usually have a lower case 's'. For , BC846A Phi ITT N BC546A FMMT3904 Zet N 2N3904 MMBT3904 Mot N 2N3904 IRLML2402 IR F n-ch mosfet 20V 0.9A , complete!! An 'L' suffix usually indicates a low-profile package, such as an SOT323 or SC70. Reverse joggle , for errors or omissions. The SMD Codebook is © R P Blackwell. http://www.marsport.demon.co.uk/smd
SMD Code Book
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MMBD2104 Transistor NEC 05F hp2835 diode what is the equivalent of ZTX 458 transistor ZENER DIODE t2d T2D DIODE 3w BZV49 BZV55 BAS32 BAS45 BAV105 LL4148

SMD Codes

Abstract: TRANSISTOR SMD T1P effect transistor maximum available gain maximum min mmic modamp mosfet n-ch npn o/p p-ch pin pkg pnp , devices with the same ID code. This compilation has been collected from R P Blackwell G4PMK, manufacturers , sometimes have a lower case 'p' (or sometimes 't') added to the code; Siemens devices usually have a lower , IR F n-ch mosfet 20V 0.9A This has been a problem in the past, however recently manufacturers have , after the code letter. An 'L' suffix usually indicates a low-profile package, such as an SOT323 or SC70
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SMD Codes TRANSISTOR SMD T1P BAW92 schottky diode s6 81A smd transistor A6a a4s smd transistor LL4448 BB241 BB249 LL914 LL4150 BB219

smd code book

Abstract: transistor SMD P1f SOT143 3 pin diodes SOT23 P-ch mosfet 60V 180mA n-ch jfet ultra low i/p Ig n-ch jfet ultra low i/p Ig , Codebook © R P Blackwell, GM4PMK To look up a coded device, click on the first character of the device , Resistors Package Equivalents Date coding Package dimensions SOT-23, SOT346 SOT-323, SOT-416 SOT , PAD-10 10pA leakage diode 2N2369 n-ch mosfet 80V 175mA npn RF MRF571 zener 200mW 2.0V 50V 100mA npn sw + 10k base res SOT89 SOT23 SOT23 SOT89 EMT3 SC70 SC59 SOT23 EMT3 SC70 SC59 SOT143 SOT89 SOT323 SOT23
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smd code book transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg Transistor SMD a7s smd transistor WW1 2SC3603 PDTA143ET SSTPAD10 SO2369R BST82 MRF5711L

2sc3052ef

Abstract: 2n2222a SOT23 RF MMICs 7 RF Diodes 8 RF MOSFET 16 Schottky Diodes 18 ESD and EMI Protection , N = NPN P = PNP BF517 BF770A BF771 BF775 BF799 BF799W BFG135A BFG193 BFG196 BFG19S , 900 Package Family SOT23 SOT23 SOT23 SOT23 SOT23 SOT323 SOT223 SOT223 SOT223 SOT223 , SOT23 SOT23 SOT323 SOT23 SOT323 SOT23 SOT323 SOT23 SOT323 TSFP-3 SOT23 TSFP-3 TSFP-3 SOT23 SOT323 SOT23 SOT323 SOT23 SOT363 SOT323 SOT363 SOT363 [www.infineon.com/rf] Type/Polarity
Infineon Technologies
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2sc3052ef 2n2222a SOT23 TRANSISTOR SMD MARKING CODE s2a 1N4148 SMD LL-34 TRANSISTOR SMD CODE PACKAGE SOT23 2n2222 sot23 BFG235 BFP181 BFP181R BFP182 BFP182R BFP182W

SOT323 MOSFET P

Abstract: ST7401S32RG ://www.stansontech.com STP7401 2005. V1 STP7401 P Channel Enhancement Mode MOSFET -2.8A SOT-323 PACKAGE , STP7401 P Channel Enhancement Mode MOSFET -2.8A DESCRIPTION STP7401 is the P-Channel logic , http://www.stansontech.com STP7401 2005. V1 STP7401 P Channel Enhancement Mode MOSFET , STP7401 2005. V1 STP7401 P Channel Enhancement Mode MOSFET -2.8A ELECTRICAL CHARACTERISTICS , STP7401 P Channel Enhancement Mode MOSFET -2.8A TYPICAL CHARACTERICTICS (25 unless otherwise noted
Stanson Technology
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STP7401S32RG ST7401S32RG SOT323 MOSFET P S 170 MOSFET TRANSISTOR ST7401 S32 SOT SC-70

XM0830SJ

Abstract: smd code marking 162 sot23-5 RF MMICs 7 RF Diodes 8 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI , < 24GHz Type/Polarity N = NPN P = PNP BF517 BF770A BF771 BF775 BF799 BF799W BFP181 BFP181R , SOT23 SOT23 SOT23 SOT23 SOT23 SOT323 SOT143 SOT143R SOT143 SOT143R SOT343 SOT143 SOT343 SOT143 SOT343 SOT143 SOT343 SOT89 SOT23 SOT23 SOT323 SOT23 SOT323 SOT23 SOT323 SOT23 SOT323 TSFP-3 SOT23 TSFP-3 TSFP-3 SOT23 SOT323 SOT23 SOT323 SOT23 SOT363 SOT323 SOT363 SOT363
Infineon Technologies
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XM0830SJ smd code marking 162 sot23-5 MARKING V14 SOT23-5 RF Transistor Selection smd code marking rf ft sot23 sot-363 inf BFP183 BFP183W BFP193 BFP193W BFP196 BFP196W

transistor marking 44 sot23

Abstract: marking code diode 04 MOSFET 20V, 0.2A rDS(ON) = 8.0 DPAK Marking Code: Full P/N SOT-23 Marking Code: C802A SOT , , 1.0A VF=0.55V PD=0.5W TLM563 Marking Code: CJB CMPDM7002A N-Channel MOSFET 60V, 0.28A rDS(ON) = 2.0 CMUDM7001 N-Channel MOSFET 20V, 0.2A rDS(ON) = 3.0 SOT-23 Marking Code: C702A , Marking Code: CHA1 CMMSH2-40 Schottky Rectifier 40V, 2.0A VF=0.5V CMPDM7120G N-Channel MOSFET 20V, 1.0A rDS(ON) = 0.1 CMPDM8120 P-Channel MOSFET 20V, 0.86A rDS(ON) = 0.15 SOD
Central Semiconductor
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transistor marking 44 sot23 marking code diode 04 Diode SMA marking code PD schottky diode 40a MARKING CODE 028a sot 23 marking 1PC CMSH1-20ML CMSH2-20M CMSH2-20L CMSH3-20MA CMSH3-20L CMSH5-20

SMBJ5A

Abstract: irf640m SOT323-5L USBDF02W5 Parallel Port EMI Filter -25 500 SOT323-5L P/N Description , 3.3 Vdc CHANNEL 1 5 Vdc CPU Vcore I / P MOSFET DRIVER 12 Vdc PWM DRIVER DC-DC BUCK VRM CHANNEL 1 MOSFET DRIVER PWM DRIVER DC-DC CHANNEL 1 CPU Vcore I / P MOSFET , RS232 Interface ESDA PS/2 Port Termination KBMF Processor VRM MOSFET SCHOTTKY Voltage , DDR110 Various Standard Logic PROCESSOR MOSFET SCHOTTKY DALC DVI HDD CD/DVD IDE+ 1394
STMicroelectronics
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SMBJ5A irf640m LM358 laser driver sod ic ld1117 3.3v 4801 MOSFET circuit diagram adsl modem board ST1284 ESDA25W5 ESDA25B1 DALC208SC6 IEEE1394 DALC112S1

SOT-323

Abstract: JESD22-A108-C 2010/06/10 Revision C Page. 9 Page 1 DS-251109 SMD MOSFET 2N7002W 60V N-Channel Enhancement Mode MOSFET Package outline Formosa MS SOT-323 0.026 (0.65)Max Features · R DS(ON), V GS , SMD MOSFET 2N7002W List Formosa MS List , Epoxy:UL94-V0 rated flame retardant · Case : Molded plastic, SOT-323 · Terminals : Solder plated , MOSFET 2N7002W Electrical characteristics (AT T =25 C unless otherwise noted) o A Formosa MS
Formosa MS
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JESD22-A108-C SOT-323 JESD22-A108C Marking Code 72 JESD22-B102-D JESD22-A102-C JESD22-A104-B JESD22-A101-B JESD22-B103-B

SOT-323

Abstract: W P D2 D1 T C W1 D unit:mm Item Symbol Tolerance SOT-323 Carrier , Formosa MS N-Channel SMD MOSFET ESD Protection 2N7002KW List List , . DS-251127 2009/07/10 2012/02/02 B 8 Formosa MS N-Channel SMD MOSFET ESD Protection 2N7002KW 60V N-Channel Enhancement Mode MOSFET - ESD Protection Features Package outline â'¢ R , retardant â'¢ Case : Molded plastic, SOT-323 â'¢ Terminals : Solder plated, solderable per 0.040 (1.00
Formosa MS
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SMD MARKING QG 6 PIN

Abstract: smd diode 2n7002 marking code 2012/02/02 Revision B Page. 8 Page 1 DS-251127 SMD MOSFET 2N7002KW 60V N-Channel Enhancement Mode MOSFET - ESD Protection Package outline Formosa MS SOT-323 0.026 (0.65)Max Features , SMD MOSFET 2N7002KW List Formosa MS List , , SOT-323 · Terminals : Solder plated, solderable per MIL-STD-750, Method 2026 0.032 (0.80 , Page 2 DS-251127 SMD MOSFET 2N7002KW Electrical characteristics (AT T =25 C unless otherwise
Formosa MS
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SMD MARKING QG 6 PIN smd diode 2n7002 marking code 2n7002 marking code RK smd sot 323 diode code 14 RK sot-323 RS-481-A

TPCA*8030

Abstract: lm2804 2009-9 SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 . 4 2 MOSFET , . 11 2.3 MOSFET . 12 2.4 MOSFET
Toshiba
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TPCA*8030 lm2804 TPCA*8036 Sj 88a diode 2SK2033 TPCA8028 TC7SHU04FU SC-88A TC7SH08FU TC7SH14FU TC7SH32FU TC7SH86FU

smd transistor 7k

Abstract: OF TRANSISTOR AT 30B to92 PH8230E Extended range of N-Channel MOSFETs in LFPAK Our N-channel MOSFET range of devices in the , Package identifier N = TSOP6 (SOT457) W = TSSOP8 V = SOT23 G = SC88 (SOT363) F = SC70 (SOT323) R = SC75 (SOT416) S = SC89 (SOT490) T = SOT666 Z = MCD N = N-channel P = P-channel Gate level U = , industry-standard packages ­ SOT346 (SC-59), SOT323 (SC-70) SOT23 and SOT54 (TO-92) ­ ensuring maximum design , -101 SOT346 / SC-59 SOT883 / SC-101 SOT54 / TO-92 SOT323 / SC-70 SOT346 / SC-59 SOT54 / TO-92 SOT323
Philips Semiconductors
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LPC2100 BUK1M200-50SDLD smd transistor 7k OF TRANSISTOR AT 30B to92 transistor AY PNP smd Transistor SMD SOT363 SC70 transistor digital 47k 22k PNP NPN LPC210 PH3230S NE57810 NE57811

DMG1012

Abstract: ZVN4206GV MOSFET portfolio encompasses N channel, P channel, and complementary devices with breakdown voltages , =4.5V DMS2220LFDB MOSFET plus SBR a P a Y a -20 a ±12 -2.9 1.4 a 95 120 a 150 a 627 DMS2120LFWB MOSFET plus SBR P Y -20 ±12 -3.5 1.5 95 120 150 DMS2220LFW MOSFET plus SBR P Y -20 ±12 -2.9 1.5 95 120 130 a SBR is a , DIO 1931 MOSFET brochure (Final Artwork extra amends) 13/1/10 11:51 Page 1 MOSFETs
Diodes
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DMG1012 ZVN4206GV DMP2066 zxmhc3f381n8 ZXMS6004FFTA DMN2075 D-81541 A1103-04

x8 sot323

Abstract: 2N7002PW very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology , MOSFET 8. Test information P t2 duty cycle = t1 t2 t1 t 006aaa812 Fig 17. Duty , 2N7002PW 60 V, 0.3 A N-channel Trench MOSFET Rev. 01 - 22 April 2010 Product data sheet 1 , MOSFET 2. Pinning information Table 2. Pinning Pin Symbol Description 1 G gate
NXP Semiconductors
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x8 sot323 AEC-Q101

SSM3J307T

Abstract: , Digital-Output Magnetic Sensors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p , Products: MOSFETs in a 2 x 2 mm LGA UDFN6 Package .6 Roadmap for Toshiba MOSFET Development , MOSFET Lineup .9 Standard MOSFET Series (ID , shorter battery charge cycles, the charge control MOSFET must have higher current and lower on-resistance , |VGS| = 1.8 V |VGS| = 2.5 V |VGS| = 4.5 V 43 60.5 89.6 242 ­ MOSFET RON(max)(m) |VGS| = 1.5 V |VGS| =
Toshiba
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SSM3J307T TC75S63TU BCE0030D
Abstract: very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Ì AEC-Q101 qualified Ì Trench MOSFET technology Ì Logic-level , NXP Semiconductors 60 V, 310 mA N-channel Trench MOSFET 8. Test information P duty cycle Î , 2N7002PW 60 V, 310 mA N-channel Trench MOSFET Rev. 02 â'" 29 July 2010 Product data sheet 1 , RDSon [1] drain-source on-state resistance VGS = 10 V; ID = 500 mA; Tj = 25 ° t p ≤ 300 NXP Semiconductors
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Abstract: SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits â'¢ â'¢ â'¢ â'¢ Very fast switching Trench MOSFET technology ESD protection , SO T3 23 NX3020NAKW 30 V, 180 mA N-channel Trench MOSFET 29 October 2013 Product data , 30 V, 180 mA N-channel Trench MOSFET 5. Pinning information Table 2. Pinning information , drain Graphic symbol D 3 1 2 G SC-70 (SOT323) S 017aaa255 6. Ordering NXP Semiconductors
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2N7002BKW

Abstract: 006-AA small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology ESD , N-channel Trench MOSFET 8. Test information t1 t2 P t2 t1 duty cycle = t 006aaa812 Fig 17 , 2N7002BKW 60 V, 310 mA N-channel Trench MOSFET Rev. 1 - 17 June 2010 Product data sheet 1 , mA N-channel Trench MOSFET 2. Pinning information Table 2. Pin 1 2 3 Pinning Symbol G S D
NXP Semiconductors
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006-AA TRANSISTOR SMD MARKING CODE 50 2n7002bk 771-2N7002BKW115
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