NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: Multi-Source 22 1 Q1 2N4401 2N4401 NPN Transistor SOT-23N 2N4401 2N4401 23 1 Q2 2N4403 2N4403 NPN Transistor SOT-23N 2N4403 2N4403 Multi-Source 24 1 Q3 Si9422DY Si9422DY N-Channel MOSFET ... | Original |
7 pages, |
capacitor cross reference dale load resistor Dale WSL 2N4401 surface mount LPE-7466 LPE-7466-A389 P5205 schematic liteon capacitor .05 uF Cross reference Capacitor 24 0.25 uF vishay SOT-23N resistor cross reference vishay liteon, transformer Si9118/9119DB Si9118/9119DB Si9118/9119DB abstract |
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| Abstract: VJ1812Y333MXEAT VJ1812Y333MXEAT Vishay Vitramon 22 1 Q1 2N4401 2N4401 NPN Transistor SOT-23N 2N4401 2N4401 Multi-Source 23 1 Q2 2N4403 2N4403 NPN Transistor SOT-23N 2N4403 2N4403 Multi-Source 24 1 Q3 ... | Original |
7 pages, |
ZMM5245BCT 0,047 MF CAPACITOR 10mH inductor 1545CT BYS10 diode PSM 14 P5205 Si9119DB VJ1206Y105 LPE-7466 0.5 MF CAPACITOR .1 mF capacitor 0.047 mF CAPACITOR Si9118/9119DB Si9118/9119DB Si9118/9 Si9118/9119DB abstract |
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| Abstract: MJE18004 TO-266AA MTP5P25 MGB20N40CLT4 SG388CH/D SG388CH/D 2000 4 2 SG388CH/D SG388CH/D 2000 3 2 © SCILLC,2000 © 1999 "" http://onsemi.com.cn (SCI LLC) ./012 @ABC SCILLC SCILLC > !"#$%&'()*+,%?./14*+=* )NO @ A L M N O lmno*+pdj} ' SCI LLC '$¡¢ ¯ SCILLC 3 1 4 5 6 ' 0 7 ' * + 0 8 9 : ; < * + = * L M N OP 5 Q 6 ' : R DEFG0HIFGJK=* 6's7'otum_ S T UVWXYZ[\]^6'_`&abcdef c,- SCILLC > g h Z i 0 j k i ?go_07 FG SCI LLC q r v ... | Original |
333 pages, |
ac din hfe nv IC TL431c opto LM393 TL 494 S016 sop23-5 dc dc sg3526 mpsa18 50v 47 16L xn lm2575 adj led tl4311 intel dg 41 crb SG388CH/D SG388CH/D abstract |
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| Abstract: plating product for SOT-23NS type number: TL431NSL TL431NSL ORDERING INFORMATION Order Number Pin Assignment , ) K: Lead Free Plating, Blank: Pb/Sn L : Lead Free Plating Only for SOT-23NS Type , (3)Lead ... | Original |
6 pages, |
TL431 TL431 application note TL431 SOT-23 TL431 sot89 TL431-AB3-R TL431-AE3-R TL431-T92-R TL431NS-AE3-R TL431NSL UTC7805 utc tl431k TL431 UTC TL431K TL431 abstract |
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| Abstract: 30.1k nc 19.1k 43.2k 3LED R-restart LM3431RMODE LM3431RMODE DIM SOT-23NMOSQ1THM SGND878 SGND878 4LED ... | Original |
8 pages, |
UUD1H100MCL Si4446DY LM3431MHX LM3431 GRM2195C1H103JA01D GRM2165C1H472JA01D C2012X7R1A475M SS24 VISHAY GRM32ER71H475KA88L LM34318V LEDLM3431 LM3431LED LED100 LED69 LM3431 abstract |
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| Abstract: DIAGRAMS AND PIN CONNECTIONS THIN SOT23�NTR SUFFIX CASE 483 Gnd Vin 1 xxxYW 2 3 (Top View) 5 N/C , ://onsemi.com 12 MC78LC00 MC78LC00 Series PACKAGE DIMENSIONS THIN SOT23�NTR SUFFIX PLASTIC PACKAGE CASE 483� ISSUE ... | Original |
16 pages, |
MC78LC00 MC78LC00 abstract |
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| Abstract: Calogic, LLC 237 Whitney Place Fremont, CA 94539 Tel: 510-656-2900 Fax: 510-651-1076 JFET Am plifie r Applica t ion s ( Low Le a k a ge ) P/ N ldss lgss gfs eN Pa ck a ge Ch a n n e l ( m A( m in ) ) ( pA( m a x ) ) ( m S( m in) ) ( n V / r oot H z ( t yp) ) PN4117A PN4117A .02 -1 .07 25 TO- 92 N PN4118A PN4118A .08 -1 .08 25 TO- 92 N PN4119A PN4119A .2 -1 .1 25 TO- 92 N SST4117 SST4117 .02 -1 .07 25 SOT- 23 N SST4118 SST4118 .08 ... | Original |
1 pages, |
SST4119 SST4118 SST4117 PN4119A PN4118A PN4117A PN4117A abstract |
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| Abstract: ACTIVE COMPONENTS FOR HYBRID CIRCUITS COMPOSANTS ACTIFS POUR CIRCUITS HYBRIDES s CB-166 CB-166 (SOT-23) N channel field effect transistors Transistors à effet de champ. canal N Type Type Mark Marq n ing uage r il « g •si! Q. QQ ♦ vds (v) vgd (v) vgs (v) 'g (mAI 'dss / (mAI j min max vds (v) Equivalent Equivalence bfr 30 m1 d 25 -25 -25 5 4- 10 10 esm 4303 bfr 31 m2 d 25 -25 -25 5 1 â- 5 10 esm 4302 so 3966 f 29 f 09 d(h> 30 -30 -30 10 2 20 2n 3966 so 4091 f22 f 02 d(h) 40 -40 -40 1CI 30 ... | OCR Scan |
1 pages, |
transistor ESM 30 Transistor BFR 30 transistor 4393 MARKING S04 4392 CB-166 CB-166 abstract |
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| Abstract: SOT23 N CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET VN10LF VN10LF FEATURES * PARTMARKING DETAIL - VN10LF VN10LF - MY ABSOLUTE MAXIMUM RATINGS PARAMETER , SYMBOL VALUE UNIT Drain-Source Voltage Vos 60 V Continuous Drain Current @ Tamb=25'C Id 0.15 A Pulsed Drain Current Idm 3.0 A Gate-Source Voltage Vgs ±20 V Max Power Dissipation @ Tamb=25'C Ptot 33Ã' mW Operating And Storage Temperature Range tj:tstg -55 TO+150 'ó ELECTRICAL CHARACTERISTICS (at Tamb=25'C unless otherwise stated) PARAMETER SYMBOL MIN. TYP. MAX. ... | OCR Scan |
2 pages, |
VN10LF VN10LF abstract |
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| Abstract: SOT23 N CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVN4106F ZVN4106F PARTMARKING DETAIL -ZVN4106F-MZ -ZVN4106F-MZ ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage Vds 60 V Continuous Drain Current @ Tamb=25"C Id 0.2 A Pulsed Drain Current Idm 3 A Gate-Source Voltage Vgs ±20 V Max Power Dissipation @ Tamb=25"C Ptot 330 mW Operating And Storage Temperature Range tj:tstg -55 TO+150 •c ELECTRICAL CHARACTERISTICS (at Tamb=25'C unless otherwise stated) PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITION ... | OCR Scan |
2 pages, |
ZVN4106F -ZVN4106F-MZ ZVN4106F abstract |
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| Abstract: Discrete POWER & Signal Technologies MOSFET Cross Reference Guide Industry Recommended Part Number Fairchild Device Package Industry Recommended Part Number Fairchild Device 2N7000 2N7000 2N7000 2N7000 TO-92, N IRF7203 IRF7203 FDS9435A FDS9435A 2N7002 2N7002 2N7002 2N7002 SOT-23, N IRF7204 IRF7204 NDS8434A NDS8434A SO-8, P BS170 BS170 BS170 BS170 TO-92, N IRF7205 IRF7205 FDS9435A FDS9435A SO-8, P Package SO-8, P BS270 BS270 BS270 BS270 TO-92, N IRF7206 IRF7206 FDS9435A FDS9435A SO-8, P BSS100 BSS100 BSS100 BSS100 TO-92, N IR ... | Original |
7 pages, |
TO-220 2N7002 SMP60N06 IRL3402 BSS100 TO-92 SMP50N06 SMP75N06-08 SUP40N06-25L NDS9943 IRFZ48N IRF7303 NDT3055L SMP40N06 SMP50N06-25 IRLL014N 2N7000 2N7002 2N7000 abstract |
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| Abstract: SOT23 N CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET PARTMARKING DETAIL - ZVN3306F ZVN3306F - MC ZVN3306F ZVN3306F ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage Vds 60 V Continuous Drain Current @Tamb=25"C Id 0.15 A Pulsed Drain Current Idm 3.0 A Gate-Source Voltage Vgs ±20 V Max Power Dissipation @ Tamb=25'C Ptot 330 mW Operating And Storage Temperature Range tj:tstg -55 TO+150 •c ELECTRICAL CHARACTERISTICS (at Tamb=25'C unless otherwise stated) PARAMETER SYMBOL MIN. TYP. MAX. UNIT CON ... | OCR Scan |
3 pages, |
ZVN3306F ZVN3306F abstract |
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| Abstract: BC817-16 BC817-16 BC817-25 BC817-25 NPN Transistor BC817-40 BC817-40 Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free FEATURES SOT-23 n Power dissipation PCM: 300 mW (Tamb=25 C) Collector current ICM: 500 mA Collector-base voltage V(BR)CBO: 30 V Operating and junction temperature range TJ, Tstg: -55 C to +150 C For general AF applications High collector current High current gain Low collector-emitter saturation voltage n n n o n ... | Original |
2 pages, |
transistor marking 6c marking 6A SOT 23 BC817-40 BC817-25 BC817-16 BC817 6B sot-23 transistor 6c x BC817-16 abstract |
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| Abstract: BST82 BST82 SOT23 N CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET I BST82 BST82 I Issue 2 - October 1997 PARTMARKING DETAIL  O2 E C B SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain Source Voltage V DS VALUE 80 UNIT V Drain Source Voltage (non repetitive peak tp 2ms) V DS(sm) 100 V Continuous Drain Current at T amb=25°C ID 175 mA Drain Current Peak I DM 600 mA Gate-Source Voltage V GS ± 20 V Max Power Dissi ... | Original |
1 pages, |
BST82 FET SOT23 60V BST82 abstract |
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| Abstract: SOT23 N CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET PARTMARKING DETAIL - ZVN3310F ZVN3310F - MF ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage Vds 100 V â- Continuous Drain Current @ Tamb=25'C Id 0.1 _ A Pulsed Drain Current Idm 2.0 A Gate-Source Voltage Vgs ±20 V Max Power Dissipation @ Tomb=25"C Ptot 330 mW Operating And Storage Temperature Range tj:tstg -55 TO+150 'ô ELECTRICAL CHARACTERISTICS (at Tamb=25'C unless otherwise stated) PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIO ... | OCR Scan |
3 pages, |
ZVN3310F SS50 DS371 ZVN3310F abstract |
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| Abstract | Saved from | Date Saved | File Size | Type | Download |
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| -effect transistors","30.0","DC, LF and HF amplifiers"," ","typ. 0.8","2.5","0.4","10","0.7 to 3", " junction field-effect transistors","20 ", " junction field-effect transistors","20.0","RF stages FM portables, car radios, main radios and mixer stages","typ. 2.2","6","0.4","10","6 to 12", "BF513 BF513 BF513 BF513","SOT23","N ","typ. 3","7","0.4","10","10 to 18", " junction field-effect transistors","30 www.datasheetarchive.com/download/31412882-648930ZC/15491_e.csv |
Philips | 13/06/2005 | 3.63 Kb | CSV | 15491_e.csv |
| ","mA","mA","ns","ns","ns","mA", "","","","","","","","","","","","","","","","", " junction field-effect transistors for switching","40.0","4 to ","", " junction field-effect transistors for switching","40.0","2 to 6","5","20.0","2.0","6","40.0","50","20 to 100","","","50","100", " junction field-effect transistors for switching ","2.0","0.5","3","100.0","50","2","typ. 13","35","","", " junction field-effect transistors for switching ","25.0","2.0","5","60.0","50","25 to 75","15","","35","75", " junction field-effect transistors for www.datasheetarchive.com/download/25230819-648936ZC/15528_e.csv |
Philips | 13/06/2005 | 3.3 Kb | CSV | 15528_e.csv |
| ","","","","","","","","","","","","","","","","","","","","","","","","", " , single gate MOSFETs for switching","3 .5","1.1","","","","","","","","","","","","","","","","","","", " junction field-effect transistors","20.0","0.7 to 3","","","10","typ. 0 .5","0.4","","","","","","","","","","","","","","","","","","", " junction field-effect transistors","20.0","2.5 to 7","","","10","typ. 1 ","0.4","","","","","","","","","","","","","","","","","","", " junction field-effect transistors","20.0","6 to 12","","","10","typ. 2 ","0.4","","","","","","","","","","","","","","","","","","", " junction field-effect transistors","20.0","10 to 18","","","10","typ. 3 www.datasheetarchive.com/download/12026650-648924ZC/15490_e.csv |
Philips | 13/06/2005 | 23.53 Kb | CSV | 15490_e.csv |
| * Discrete JFET Electrical Models * * Product: MMBFJ201 MMBFJ201 MMBFJ201 MMBFJ201 * Package: SOT-23 * N-Channel General Purpose Amplifier * .MODEL MMBFJ201 MMBFJ201 MMBFJ201 MMBFJ201 NJF + VTO=-3.95 + BETA=0.00198 + LAMBDA=0.0052 + IS=1.1937E-12 1937E-12 1937E-12 1937E-12 + ISR=3.7937E-13 7937E-13 7937E-13 7937E-13 + NR=1 + ALPHA=6.80E-6 80E-6 80E-6 80E-6 + VK=40 + RD=18.049 + RS=18.049 + CGD=1.998e-012 + CGS=1.258e-012 + M=0.280 + PB=0.515 + KF=5.622e-018 + AF=0.55664 + BETATCE=-0.46 + VTOTC=-2.1000E-3 1000E-3 1000E-3 1000E-3 www.datasheetarchive.com/files/fairchild/simulation-models/mmbfj201.lib |
Fairchild | 22/10/2012 | 0.57 Kb | LIB | mmbfj201.lib |
| * Discrete JFET Electrical Models * * Product: MMBFJ202 MMBFJ202 MMBFJ202 MMBFJ202 * Package: SOT-23 * N-Channel General Purpose Amplifier * .MODEL MMBFJ202 MMBFJ202 MMBFJ202 MMBFJ202 NJF + VTO=-3.95 + BETA=0.00198 + LAMBDA=0.0052 + IS=1.1937E-12 1937E-12 1937E-12 1937E-12 + ISR=3.7937E-13 7937E-13 7937E-13 7937E-13 + NR=1 + ALPHA=6.80E-6 80E-6 80E-6 80E-6 + VK=40 + RD=18.049 + RS=18.049 + CGD=1.998e-012 + CGS=1.258e-012 + M=0.280 + PB=0.515 + KF=5.622e-018 + AF=0.55664 + BETATCE=-0.46 + VTOTC=-2.1000E-3 1000E-3 1000E-3 1000E-3 www.datasheetarchive.com/files/fairchild/simulation-models/mmbfj202.lib |
Fairchild | 22/10/2012 | 0.57 Kb | LIB | mmbfj202.lib |
| * Discrete JFET Electrical Parameters * * Product: MMBF4416 MMBF4416 MMBF4416 MMBF4416 * Package: SOT-23 * N-Channel RF Amplifiers *- .MODEL MMBF4416 MMBF4416 MMBF4416 MMBF4416 NJF + BETA=1.50e-6 BETATCE=-0.5 RD=1.0 RS=1.0 + LAMBDA=1.5e-3 VTO=-3.06 VTOTC=-2.5e-3 IS=2.37E-14 37E-14 37E-14 37E-14 + ISR=2.50e-10 N=1 NR=2 XTI=3 + ALPHA=1.00e-1 VK=200 CGD=1.2e-12 M=0.16 + PB=0.6 FC=0.5 CGS=2.4e www.datasheetarchive.com/files/fairchild/simulation-models/mmbf4416.lib |
Fairchild | 22/10/2012 | 0.65 Kb | LIB | mmbf4416.lib |
| ","dB","dB","","","pF","ns","V","V", "","","","","","","","","","","","","","","","","", " , single gate MOSFETs for switching","3.0","10","depl.","20 www.datasheetarchive.com/download/84126287-648948ZC/15565_e.csv |
Philips | 13/06/2005 | 1.14 Kb | CSV | 15565_e.csv |
| )GS MAX. (V) BF1107 BF1107 BF1107 BF1107 SOT23 N-channel, single gate MOSFETs for switching 3.0 10 depl www.datasheetarchive.com/files/philips/selectionguides/tables/15565-v2.html |
Philips | 13/06/2005 | 9.34 Kb | HTML | 15565-v2.html |
| * NDS331N NDS331N NDS331N NDS331N ELECTRICAL MODEL (SuperSOT-3 SOT-23 N-Ch DMOS) * - .SUBCKT NDS331N NDS331N NDS331N NDS331N 20 10 30 Rg 10 1 1 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS (VTO={0.8*{-0.0032*TEMP+1.08}} KP={-0.011*TEMP+6} + THETA=0.096 VMAX=4E5 LEVEL=3) Cgs 1 3 150p Rd 20 4 20m TC=0.0048 Dds 3 4 DDS .MODEL DDS D(BV={20*{0.0008*TEMP+0.98}} M=0.3 CJO=200p VJ=0.8) Dbody 3 20 DBODY .MODEL DBODY D www.datasheetarchive.com/files/fairchild/pdfs/models actual/nds331n.mod |
Fairchild | 22/08/2003 | 0.96 Kb | MOD | nds331n.mod |
| * NDS331N NDS331N NDS331N NDS331N ELECTRICAL MODEL (SuperSOT-3 SOT-23 N-Ch DMOS) * - .SUBCKT NDS331N NDS331N NDS331N NDS331N 20 10 30 Rg 10 1 1 M1 2 1 3 3 DMOS L=1u W=1u .MODEL DMOS NMOS (VTO={0.8*{-0.0032*TEMP+1.08}} KP={-0.011*TEMP+6} + THETA=0.096 VMAX=4E5 LEVEL=3) Cgs 1 3 150p Rd 20 4 20m TC=0.0048 Dds 3 4 DDS .MODEL DDS D(BV={20*{0.0008*TEMP+0.98}} M=0.3 CJO=200p VJ=0.8) Dbody 3 20 DBODY .MODEL DBODY D www.datasheetarchive.com/files/fairchild/pdfs/models/nds331n.txt |
Fairchild | 22/08/2003 | 0.96 Kb | TXT | nds331n.txt |