SNA-600 SNA-676 84-1LMIT1 - Datasheet Archive

 

SNA-600 Stanford Microdevices' SNA-600 is a high-performance GaAs Heterojunction Bipolar Transistor (MMIC) in die form. A

 

Product Description SNA-600 SNA-600 Stanford Microdevices' SNA-600 SNA-600 is a high-performance GaAs Heterojunction Bipolar Transistor (MMIC) in die form. A Darlington configuration is utilized for broadband performance to 6.5 GHz. DC-6.5 GHz, Cascadable GaAs MMIC Amplifier These unconditionally stable amplifiers provide 11dB of gain and +18dBm of P1dB when biased at 5.7V and 70mA. P1dB and TOIP may be improved by 2dB by biasing @ 100mA. This MMIC requires only a single supply voltage. The use of an external resistor allows for bias flexibility and stability. Also available in packaged form (SNA-676 SNA-676, -686 & -687), its small size (0.4mm x 0.4mm) and gold metallization make it an ideal choice for use in hybrid circuits. The SNA-600 SNA-600 is available in gel paks at 100 devices per container. Output Power vs. Frequency 22 20 18 dBm 16 14 Applications · Narrow and Broadband Linear Amplifiers · Commercial and Industrial Applications 12 0.1 1 2 3 4 5 6 7 8 GHz Electrical Specifications at Ta = 25C Sym bol G P BW 3dB P 1dB NF VSW R IP T 3 D IS O L VD P a r a m e te r s : T e s t C o n d itio n s : U n its Id = 7 0 m A , Z 0 = 5 0 O h m s f = 0 .1 -4 .0 G H z f = 4 .0 -6 .5 G H z S m a ll S ig n a l G a in 3 d B B a n d w id th M in . Ty p . dB dB 9 .0 11 .0 9 .0 GHz 6 .5 O u tp u t P o w e r a t 1 d B C o m p re s s io n f = 0 .1 -2 .0 G H z f = 2 .0 -6 .5 G H z dBm 1 8 .0 1 6 .0 N o is e F ig u r e f = 0 .1 -4 .0 G H z f = 4 .0 -6 .5 G H z dB 7 .5 8 .5 In p u t / O u tp u t f = 0 .1 -6 .5 G H z T h i r d O r d e r I n t e r c e p t P o in t f = 0 .1 -2 .0 G H z f = 2 .0 -6 .5 G H z dBm dBm 3 6 .0 3 4 .0 G r o u p D e la y f = 2 .0 G H z psec 120 R e v e r s e Is o la tio n f = 0 .1 -6 .5 G H z M ax. D e v ic e V o lta g e 1 .5 :1 dB V 1 7 .0 4 .8 5 .7 d G /d T D e v i c e G a i n T e m p e r a t u r e C o e ff i c i e n t d B /d e g C d V /d T D e v i c e V o l t a g e T e m p e r a t u r e C o e ff i c i e n t m V /d e g C 6 .8 -0 .0 0 2 3 -5 .0 The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions. Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user's own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems. Copyright 1999 Stanford Microdevices, Inc. All worldwide rights reserved. 522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC 5-85 http://www.stanfordmicro.com 50 Ohm Gain Blocks Product Features · Cascadable 50 Ohm Gain Block · 11dB Gain, +18dBm P1dB · High Linearity, +36dBm TOIP Typ. · 1.5:1 Input and Output VSWR · Chip Back Is Ground SNA-600 SNA-600 DC-6.5 GHz Cascadable MMIC Amplifier Typical Performance at 25° C (Vds = 5.7V, Ids = 70mA) |S11| vs. Frequency |S21| vs. Frequency -5 12 -10 10 -15 dB dB 8 -20 6 -25 -30 4 0.1 1 2 3 4 5 6 7 8 0.1 1 2 3 6 7 8 -5 -5 -10 -10 -15 dB -15 -20 -20 -25 -25 -30 0.1 1 2 3 4 5 6 7 8 0.1 1 2 3 4 5 6 7 8 50 Ohm Gain Blocks GHz GHz TOIP vs. Frequency Noise Figure vs. Frequency 10 38 9 36 34 8 dB 5 |S22| vs. Frequency |S12| vs. Frequency 0 dB 4 GHz GHz dB 7 32 6 30 28 5 0.1 1 2 3 4 5 6 0.1 6.5 GHz 522 Almanor Ave., Sunnyvale, CA 94086 1 2 3 4 5 6 7 8 GHz Phone: (800) SMI-MMIC 5-86 http://www.stanfordmicro.com SNA-600 SNA-600 DC-6.5 GHz Cascadable MMIC Amplifier Part Number Ordering Information Absolute Maximum Ratings A b s o lu te M a xim u m P a r a m ete r Part Number Devices Per Pak SNA-600 SNA-600 100 D e vic e C urre nt 1 5 0m A Po w e r D issipa tion 1 0 00 m W R F In p ut Po w er 2 0 0m W Ju n ction Te m p e ra ture +2 0 0 C O p e ra tin g Te m p e ra tu re -4 5 C to +8 5 C Sto ra g e Te m pe ra tu re -6 5 C to +1 5 0 C Notes: 1. Operation of this device above any one of these parameters may cause permanent damage. MTTF vs. Temperature @ Id = 70mA Die Bottom Temperature Junction Temperature MTTF (hrs) +75C +155C 1000000 +110C +190C 100000 +140C +220C 10000 Die Attach Wire Bonding The die attach process mechanically attaches the die to the circuit substrate. In addition, it electrically connects the ground to the trace on which the die is mounted and establishes the thermal path by which heat can leave the die. Electrical connections to the die are through wire bonds. Stanford Microdevices recommends wedge bonding or ball bonding to the pads of these devices. Recommended Wedge Bonding Procedure Assembly Techniques Epoxy die attach is recommended. The top and bottom metallization is gold. Conductive silver-filled epoxies are recommended. This method involves the use of epoxy to form a joint between the backside gold of the chip and the metallized area of the substrate. A 150 C cure for 1 hour is necessary. Recommended epoxy is Ablebond 84-1LMIT1 84-1LMIT1 from Ablestik. 522 Almanor Ave., Sunnyvale, CA 94086 1. Set the heater block temperature to 260C +/- 10C. 2. Use pre-stressed (annealed) gold wire between 0.0005 to 0.001 inches in diameter. 3. Tip bonding pressure should be between 15 and 20 grams and should not exceed 20 grams. The footprint that the wedge leaves on the gold wire should be between 1.5 and 2.5 wire diameters across for a good bond. Phone: (800) SMI-MMIC 5-87 http://www.stanfordmicro.com 50 Ohm Gain Blocks Typical Biasing Configuration Thermal Resistance (Lead-Junction): 200° C/W