500 MILLION PARTS FROM 12000 MANUFACTURERS

DATASHEET SEARCH ENGINE

Top Results

Part Manufacturer Description Datasheet BUY
ATH006A0X4 GE Critical Power Austin Microlynx II SIP Non-isolated Power Modules visit GE Critical Power
AXA003A0X4Z GE Critical Power Austin Minilynx 12V SIP Non-isolated Power Module visit GE Critical Power
AXH005A0X GE Critical Power Austin Microlynx SIP Non-isolated Power Module visit GE Critical Power
AXA003A0X GE Critical Power Austin Minilynx 12V SIP Non-isolated Power Module visit GE Critical Power
AXH003A0X4-Z GE Critical Power Austin Minilynx SIP Non-isolated Power Module visit GE Critical Power
AXH010A0X3Z GE Critical Power Austin Lynx SIP Non-isolated Power Module, Programmable visit GE Critical Power

SMD-10 Package Datasheet

Part Manufacturer Description PDF Type
SMD-10 Package International Rectifier Case Outline and Dimensions Original

SMD-10 Package

Catalog Datasheet MFG & Type PDF Document Tags

LM2608

Abstract: SMD-10 PACKAGE Small Ceramic Capacitors · Sub-miniature micro SMD-10 Package Older generation cell phones powered , , LM2614, and LM2618. All of these products are offered in a micro SMD-10 package, measuring only 2.25 mm , ' products offered only in the SOT-23 package. National's micro SMD package, the industry's smallest, is a revolution in packaging technology, allowing the die to act as the package. This provides a thermal , the package allow the parts to run cooler, making them more efficient. Smaller footprints combined
National Semiconductor
Original
LM2612 LM2608 national semiconductor, application brief, 119 smd pwm controller LM2608-1 LM2612/18
Abstract: Gate Charge â'¢ Low profile low inductance SMD-10 Package â'¢ Separated control & Power-connections , Rees Wt Min. Junction-to-Case - IGBT Junction-to-Case - Diode SMD-10 Case-to-Heatsink (typical , '" 6.0 â'" -13 â'" 30 â'" 46 â'" â'" 250 â'" VGEith) â'" 10 Diode , 160 10 16 680 1400 250 320 â'" â'" â'" â'" â'" â'" â'" â'" â'" â'" â'" â'" â , 6000 0 3 \ O o Voes 4000 â J. 2000 's s \ 's 1 \ 10 100 VCE, C -
OCR Scan
IRG4ZH70UD

TRANSISTOR SMD 9bb

Abstract: TI 42A · Low Gate Charge · Low profile low inductance SMD-10 Package · Separated control & , Absolute Maximum Ratings Parameter VcES lC @ T c = 2 5 °C |C @ T C = 10 0 °C Icm l|_M lF @ T c = 100 °C , Parameter R&jc R&jc R«cs Wt Junction-to-Case - IGBT Junction-to-Case - Diode SMD-10 Case-to-Heats ink , e , lc = 2 5 0 |iA See Fig. 2, 5 - VGE(lh) AVGE(1h)/ATj 9le Ic e s - 6 0 - - 250 10 , 420 56 107 160 10 16 680 250 320 590 71 180 - - 400 280 - - 9.8 - - - - - - - - - 160 240
-
OCR Scan
TRANSISTOR SMD 9bb TI 42A
Abstract: Gate Charge â'¢ Low profile low inductance SMD-10 Package â'¢ Separated control & Power-connections , Rees Wt Min. Junction-to-Case - IGBT Junction-to-Case - Diode SMD-10 Case-to-Heatsink (typical , Losses vs. Gate Resistance Fig. 10 - Typical Switching Losses vs. Junction Temperature , 80 100 1 I 0 , Collector-to-emitter Current (A) 10 100 1000 V c e - C , ww.lrf.com / Data and specifications subject to change without notice. 10 12/97 www.irf.com -
OCR Scan
IRG4ZC70UD

lt 39 diode smd

Abstract: smd diode 78a low conduction losses with high switching speed · Low profile low inductance SMD-10 Package · , 156 42 156 10 ± 20 350 140 -55 to +150 Collector-to-Emitter Voltage Continuous Collector , IGBT Junction-to-Case - Diode SMD-10 Case-to-Heatsink (typical), * Weight Min. Typ. Max , Transconductance 23 34 - S Zero Gate Voltage Collector Current - - 500 µA - - 10 mA Diode , Min. - - - - - - - - - - 10 Typ. 380 48 120 80 45 215 220 3.64 3.17
International Rectifier
Original
IRG4ZH71KD lt 39 diode smd smd diode 78a

IRG4ZC70UD

Abstract: smd diode T3 configurations Low gate charge G Low profile low inductance SMD-10 package E(k) Separated control & , conditions; high input impedance requires low gate drive power Low noise and interference SMD-10 , Thermal Resistance Parameter RJC RJC RCS Wt Junction-to-Case - IGBT Junction-to-Case - Diode SMD-10 , figures 9, 10, 18 4.7 - TJ = 150°C, see figures 11, 18 - ns IC = 50A, VCC = 480V - VGE = 15V , : 20 60% of rated voltage 15 I 10 Id e a l d io d es 5 0 0.1 1 10 100 f
International Rectifier
Original
smd diode T3 transistor 5c smd package SMD diode 18b 5c P channel 50A IGBT smd transistor 18E smd transistor 5c

smd transistor 18E

Abstract: gFE smd diode configurations Low Gate Charge Low profile low inductance SMD-10 Package Separated control & Power-connections , application conditions High input impedance requires low gate drive power Less noise and interference SMD-10 , Thermal Resistance Parameter RJC RJC RCS Wt Junction-to-Case - IGBT Junction-to-Case - Diode SMD-10 , mV/°C 46 - S - 250 µA - 10 mA 2.45 3.7 V 2.40 - - ±100 nA Conditions VGE = 0V , 189 3.0 3.67 6.67 37 124 200 435 12.36 2.0 7090 420 56 107 160 10 16 680 1400 250
International Rectifier
Original
gFE smd diode diode smd 312

lt 332 diode

Abstract: transistor smd MJ 145 profile low inductance SMD-10 Package Separated control & Power-connections for easy paralleling Good , power Less noise and interference SMD-10 Absolute Maximum Ratings Parameter VCES IC @ TC = 25 , Max. Units 1200 54 29 108 108 16 108 10 ± 20 210 83 -55 to +150 , Parameter RJC RJC RCS Wt Junction-to-Case - IGBT Junction-to-Case - Diode SMD-10 Case-to-Heatsink , - - - - - Typ. - 0.91 2.79 3.32 2.66 - -10 21 - - 2.5 2.1 - Max
International Rectifier
Original
IRG4ZH50KD lt 332 diode transistor smd MJ 145 GC 72 smd diode T4 diode smd Diode smd 2f

smd transistor 2f

Abstract: SMD-10 PACKAGE low conduction losses with high switching speed · Low profile low inductance SMD-10 Package · , 200 50 200 10 ± 20 350 140 -55 to +150 Collector-to-Emitter Voltage Continuous Collector , IGBT Junction-to-Case - Diode SMD-10 Case-to-Heatsink (typical), * Weight Min. Typ. Max , Threshold Voltage 3.0 - 6.0 Temperature Coeff. of Threshold Voltage - -10 - mV/°C Forward , Min. - - - - - - - - - - 10 Typ. 343 44 161 140 63 475 133 1.49 3.11
International Rectifier
Original
IRG4ZC71KD smd transistor 2f bridge diode 60a
Abstract: speed â'¢ Low profile low inductance SMD-10 Package â'¢ Separated control & Power-connections for easy , DIODE Features â'¢ High short circuit rating optimized for motor control, tsc =10(as, VCc = 7 2 0 V , ollector-to-Em itter Voltage 42 G ate-to-Em itter Voltage 156 10 US V ± 20 P d @ T c = 2 5 °C Maximum Power Dissipation 350 PD @ T c = 10 0 °C M aximum Power Dissipation 140 , . â'" Units 0.36 Junction-to-C ase - Diode â'" â'" 0.69 SM D-10 Case-to-Heatsink -
OCR Scan
IRG4ZH71
Abstract: speed â'¢ Low profile low inductance SMD-10 Package â'¢ Separated control & Power-connections for easy , Maximum Power Dissipation 350 PD @ T c = 10 0 °C M aximum Power Dissipation 140 Tj O , Forward Current 50 200 10 US V ± 20 W -55 t o +150 °C Thermal Resistance Parameter Min. Junction-to-C ase - IGBT â'" Junction-to-C ase - Diode SM D-10 Case-to-Heatsink , '" -10 â'" m V /°C 9fe Forward Transconductance© 31 46 â'" S Ices Zero -
OCR Scan
IRG4ZC71
Abstract: SMD miniQFN-10 ESD Protection Product Name Status Description Features Package , , Surface-Mount Chip Features Curve 2, 6.8 K - 12 K Tol. = 3%, 5%, 10% Alt. Curves Available Package , . 9 COMMUNICATION, class="hl">10 , DG2032 Status NEW Description Features Package High-Bandwidth, Low-Voltage, Dual SPDT , Multiplexers Low Volt Oper. 1.8 - 5.5V Low rDS(on): 4 â"¦ Fast Switch - 25-ns tON SMD QFN-12 3x3 MSOP-10 Vishay Intertechnology
Original
LLP1006-2L VESD05A1B-HD1 VLMW3200 VLMW3201 GMF05LC-HSF VESD09A4A-HS4

SMD resistors 1806

Abstract: SMD zener diode 202 Diodes page 10 Product Name Status Description Features Package 1N4148WS Small , : 1.6 V to 5.5 V; 1500 kHz; Package Q-Level SMD MSOP-10 Inductors, Wirewound Magnetics , . 10 DISPLAYS, Camera , , Audio Control Analog Switches Product Name Status Description Features Package DG2002 , ; Max. supply voltage=4.3V; rON = 0.3 ohms SMD DFN-10-MSOP-10 DG2799 Dual double-pole
Vishay Intertechnology
Original
SMD resistors 1806 SMD zener diode 202 CZA04S CZA06S IFCB-0402 ILC-0402 IMC-0402 HPC0201A

Si4830

Abstract: Fast Switching mosfet Profile; Small Outline Package; Fully Shielded; Profile height ≤ 4mm 0.19 µH to 10 µH IDC up to , ; High power /small package VRRM = 40 V; IF = 10 A;VF = 0.384 V SMD TO-277A (SMPC) 6.65x4.75x1.2mm , ; Small Outline Package; Fully Shielded; Miniature Power Profile height ≤ 3 mm 0.1 µH to 10 µH , ; Small Outline Package; Fully Shielded; Profile height ≤ 4mm 0.19 µH to 10 µH IDC up to 90 A , NEW Description Features Package P-Channel 30-V (D-S) MOSFET VDS = -30V; VGS = ± 20V
Vishay Intertechnology
Original
Si4830 Fast Switching mosfet SI3433B B25/85T B25/85 Q-101 BZX384

sq3300

Abstract: LV7720DEV . 12.7 x 20.5 mm (0.5 x 0.807 inch) metal thru-hole package for CMOS oscillators 10. 8.9 X 9.1 mm SMD , each of the Pletronics crystal model numbers with the correct package description , SM10T SM45 SM30 1. 2. 3. 4. 5. 6. 7. 8. 9. 5.0 x 7.0 mm ceramic SMD package 3.2 x 5.0 mm ceramic SMD package HC-49/US thru-hole crystal package 2.5 x 3.2 mm ceramic SMD package 3.5 x 6.0 mm ceramic SMD package HC-49/SMD with 4 pads and 5.0 mm Maximum height HC-49/SMD package, 2 pads
Pletronics
Original
sq3300 LV7720DEV SM10T-18 SQ3344-10 p1100 p1100-hc SM13T SM12T SM11T HC-49 PE7744DV-156 SM5545TEW-50

y1 smd transistor

Abstract: transistor SMD Y1 â"¦ to 10 Mâ"¦; E24-, E96-series; excellent stability Package Q-Level SMD 0201 to 2512 , 1 â"¦ to 10 Mâ"¦; E24-, E96-series; excellent stability Package Q-Level SMD 0201 to 2512 , . 10 SECONDARY SIDE, Switching Circuit , /RFI Filter Filter Capacitors Product Name Status Description Features Package Q-Level , Status Description Features Package VDRH - - .E V1: leaded varistor Max. VRMS = 680 V
Vishay Intertechnology
Original
y1 smd transistor transistor SMD Y1 c3 smd transistor TRANSISTOR SMD x2 smd transistor diode ZENER C2 smd IRFB16N50K IRFR430AP IRFU420AP IRFU430AP BUD842 BUF644

3 watt 70v zener diode

Abstract: inkjet print head interface Package Q-Level SMD LLP1010-6L page 10 Inkjet Printer : MEDIA AND POSITION SENSORS, Pen , Plastic Rectifier Features IF(AV):1.0 A; Vrrm = 50V-1000V; IFSM = 30 A; VF = 1.1 V; Package , . 10 MEDIA AND POSITION SENSORS, Pen Alignment/Color Detection Sensor , Features Half Intensity Angle=±12° λp = 950 nm. 5V/0.1A, Vf = 1.2 V Package Q-Level Custom , Features Package Q-Level P+N Channel MOSFET, SMD Id up to 1.2 A, SC70-6 rDSon 0.165 â"¦@Vin =
Vishay Intertechnology
Original
3 watt 70v zener diode inkjet print head interface K784P 1N4007 DO-204AL DO-41 1N5408 DO-201AD BYV26EGP

p1100-hc

Abstract: SM10T-18 . 12.7 x 20.5 mm (0.5 x 0.807 inch) metal thru-hole package for CMOS oscillators 10. 8.9 X 9.1 mm SMD , crystal model numbers with the correct package description , 7.0 mm ceramic SMD package 3.2 x 5.0 mm ceramic SMD package HC-49/US thru-hole crystal package 2.5 x 3.2 mm ceramic SMD package 3.5 x 6.0 mm ceramic SMD package HC-49/SMD with 4 pads and 5.0 mm Maximum height HC-49/SMD package, 2 pads and 4.5 mm max. height HC-49/SMD crystal package, 2 pads and
Pletronics
Original
SMD FREQUENCY CRYSTAL SM5544 SM5545 crystal oscillator 11.0592 mhz smd VCXO Oscillators Crystals SC-Cut Crystals SM20S S3883-32

smd transistor Y1 sot-23

Abstract: resistor, SMD Features 1 â"¦ to 10 Mâ"¦; E24-, E96-series; excellent stability Package Q-Level , 10 Mâ"¦; E24-, E96-series; excellent stability Package Q-Level SMD 0201 to 2512 page , . 10 SECONDARY SIDE, Switching Circuit , /RFI Filter Filter Capacitors Product Name Status Description Features Package Q-Level , : 10 pF - 15 nF; 400 VAC rated; TH / Radial EN/IEC UL CSA 30LVS C2, C3: leaded X1/Y2
Vishay Intertechnology
Original
smd transistor Y1 sot-23 IRFR420AP BUF654 BUF742-S-069

smd diode UF

Abstract: Resistor SMD 310 . 10 POWER SUPPLY, energy buffering , detector; PIN photodiode Features 940 nm Package Q-Level TH / Radial D: 5 mm (T-1 3/4) IR emitter Product Name Status Description Features Package TSAL 4400 leaded IR , Description Features Package TLHx4200 leaded LED, green, orange, red green, orange, red tinted clear package TLHx4400 leaded LED, green, orange, red green, orange, red tinted diffused
Vishay Intertechnology
Original
smd diode UF Resistor SMD 310 UL94V-0 DO-220AA SMM0207
Showing first 20 results.