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Part Manufacturer Description Datasheet BUY
ISL73096RHVX Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73096RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73127RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73128RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
TIL604HR2 Texas Instruments Photo Transistor, PHOTO TRANSISTOR DETECTOR visit Texas Instruments
HS0-6254RH-Q Intersil Corporation 5 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, DIE-16 visit Intersil

SMD transistor A24

Catalog Datasheet MFG & Type PDF Document Tags

transistor A143

Abstract: transistor A144 LM7900 - 220M SERIES LM7900 - SMD SERIES MECHANICAL DATA Dimensions in mm NEGATIVE VOLTAGE , â'¢ THERMAL OVERLOAD PROTECTION â'¢ SHORT CIRCUIT PROTECTION â'¢ OUTPUT TRANSISTOR SOA PROTECTION , SMD SERIES ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless stated) OUTPUT VOLTAGE â'"5 â'"12 â'"15 â'"24 INPUT VOLTAGE â'"10 â'"19 â'"23 â'"33 (unless otherwise specified , '"12.6 â'"14.3 â'"15 â'"15.7 â'"22.8 â'"24 â'"25.2 Line C DV O Regulation Tj = 25° â'"5 â
Semelab
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transistor A143 transistor A144

A19 SMD transistor

Abstract: Product FET Input Electrically Isolated Case 800mA Typical Output Current Available as SMD , eliminates the safe operating area restrictions associated with secondary breakdown of bipolar transistor , any voltage level limited only by transistor junction temperature. 115 dB of open loop gain gives the , - - - 3x10 12 - - - ±22 ±24 - F=10KHz VCM=±22V 4 90 100 , ±8.0 - - V pA - nA 3x10 12 - â"¦ ±22 ±24 - V - 90 100 -
MS Kennedy
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A19 SMD transistor MIL-PRF-38534 1461B MSK1461 MSK1461E MSK1461B

Diode zener smd 152 sot-23

Abstract: SMD DIODE zener SOT89 CENTRAL SEMICONDUCTOR SOE D â  DDODSl? Ã24 â  CEN T U-O SMD zener Diode melf case tow U.S , CLL4764A 100 2.5 350 3000 0.25 5.0 76 45 SMD Zener Diode SOT-89 Case 1 .ow Proelectron Specification TYPE , CATHODE ANODE SOT-23 TRANSISTOR EMITTER BASE COLLECTOR SOT-23 ZENER (SINGLE) NO CONNECTION ANODE CATHODE , SOT-89 TRANSISTOR EMITTER COLLECTOR BASE SOT-89 TRIAC GATE MT2 MT1 SOT-89 ZENER DIODE ANODE CATHODE , -223 TRANSISTOR BASE COLLECTOR EMITTER PIN 4 CATHODE #1 COLLECTOR 'SOURCE AND DRAIN ARE INTERCHANGEABLE ON
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Diode zener smd 152 sot-23 SMD DIODE zener SOT89 TRANSISTOR SMD CODE PACKAGE SOT89 transistor smd xb smd transistor marking 327 Transistor smd code SOT-89 CLL4728A CLL4729A CLL4730A CLL4731A CLL4732A CLL4733A
Abstract: Transistors SMD Type High-gain Amplifier Transistor 2SB852 SOT-23 â  Features Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 ● Darlington connection for high DC current gain. 0.4 3 1 0.55 C +0.1 1.3-0.1 +0.1 2.4-0.1 ● Built-in 4kΩ resistor between base and emitter , Transistors SMD Type 2SB852 â  Typlacl Characteristics â'500 VCE= â'6V 25 COLLECTOR CURRENT , â'1.2 â'1.6 â'2.0 â'2.4 â'20 5000 VCE= â'3V 2000 1000 500 â'4 â Kexin
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100MH
Abstract: (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. NPN , PBSS4032PT 30 V, 2.4 A PNP low VCEsat (BISS) transistor Rev. 01 â'" 18 December 2009 Product , open base - - â'30 V IC collector current - - â'2.4 A ICM peak , ) transistor 2. Pinning information Table 2. Pinning Pin Description 1 base 2 emitter , â'5 V IC collector current - â'2.4 A ICM peak collector current - â NXP Semiconductors
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PBSS4032NT AEC-Q101
Abstract: (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. NPN , PBSS4032PT 30 V, 2.4 A PNP low VCEsat (BISS) transistor Rev. 01 â'" 18 December 2009 Product , collector current - - â'2.4 A ICM peak collector current single pulse; tp ≤ 1 ms , NXP Semiconductors 30 V, 2.4 A PNP low VCEsat (BISS) transistor 2. Pinning information Table 2 , current - â'2.4 A ICM peak collector current - â'5 A IB base current - NXP Semiconductors
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smd transistor WF

Abstract: transistor smd wf -4 package. The bent terminal pins are suitable for surface mounting (SMD). The coupling device permits to , £8 0) lis Turn-Off Time t^ 18 (£34) 23 (£39) 25(£43) \1S Fall Time V 11 (£20) 14 (£24) 15 ( , in the base connection and additionally intensified by the transistor power gain (B typ. 400) is , 10* 10° IO1 10* mA - transistor capacitance (typ.) versus emitter voltage (T.=25°C, f=1 MHz) Permissible power dissipatlon for transistor and diode versus amblent temperature mW ZOO 150 100
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smd transistor WF transistor smd wf TRANSISTOR SMD a43 va5 smd 4E smd diode SMD transistor JD GGP7317 0G27350

A21 SMD transistor

Abstract: SMD transistor A24 .25 A.2.4 Bottom Layer , transistor controls whether transmission is allowed based on the output of the TXDISABLE pin Transmit and , A.2.4 26 Bottom Layer CY3275 Cypress Low Voltage Programmable PLC Development Kit Guide , PWR UNSHIELD 470UH SMD L2, L3 2 14-Pin header, Female LCD1 Red LED LED1, LED2 , MTG1, MTG2, MTG3, MTG4 4 Transistor NPN 45V 3A Q1 1 Zetex ZXT690BKTC
Cypress Semiconductor
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A21 SMD transistor SMD transistor A24 variable resistor 10w transistor SMD p02 SMD Transistor p37 transistor SMD p04 ERJ6GEYJ102V 1/10W MCR03EZPFX7 50KHCT MCR03EZPFX2 10KHCT
Abstract: standard output voltages, ±5 V, ±12 V, and ±24 V. The output voltages are adjustable by up to 5%. PT4311G PT4313G PT4314G = ±5 V/1.2 A = ±12 V/0.5 A = ±24 V/0.25 A Pin PT Series Suffix (PT1234 x ) Case/Pin Configuration Order Suffix A C Horizontal SMD Package Code (EGK , Area curves or contact the factory for the appropriate derating. (ii) During solder reflow of SMD , 0.6 0.25 0.125 1 0.45 0.125 A PT4311 ( ±5 V) PT4313 (±12 V) PT4314 (±24 V) 0.2 Texas Instruments
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PT4310 SLTS146B PT4300

transistor SMD p16

Abstract: transistor SMD b22 A8 A9 A10 A11 A12 A13 A14 A15 A16 A17 A18 A19 A20 A21 A22 A23 A24 A25 A26 A27 A28 , MANUFACTURER MANUFACTURER PART C11, C12 CAP, SMD, 0402, 0.1µF, 16V, 10%, X7R, ROHS VENKEL C0402X7R160-104KNE ea C9, C10 CAP, SMD, 0603, 100pF, 50V, 5%, C0G, ROHS PANASONIC ECJ-1VC1H101J 2 ea C15, C16 CAP, SMD, 0603, 10µF, 16V, 20%, X5R, ROHS TAIYO YUDEN EMK107BBJ106MA-T 4 ea C1-C4 CAP, SMD, 0805, 10µF, 25V, 10%, X5R, ROHS TDK C2012X5R1E106K 8 ea
Intersil
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transistor SMD p16 transistor SMD b22 CRCW06033162F smd TRANSISTOR code b6 ISL95901EVAL1Z ISL95901 AN1743
Abstract: BLD6G21L-50; BLD6G21LS-50 TD-SCDMA 2010 MHz to 2025 MHz fully integrated Doherty transistor Rev , proper input/output match and bias setting as with a normal class-AB transistor. Table 1. Typical , 28 8 14.5 43 â'24 53 [1] Test signal: 6-carrier TD-SCDMA; PAR = 10.8 dB at 0.01 , TD-SCDMA 2010 MHz to 2025 MHz fully integrated Doherty transistor Ì Ì Ì Ì Ì Ì Integrated , TD-SCDMA 2010 MHz to 2025 MHz fully integrated Doherty transistor 4. Block diagram RF-input/bias main NXP Semiconductors
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opamp 4009

Abstract: . 33 A.2.4 Bottom Layer , of the transmitted PLC signal. This transistor controls whether the transmit circuit is enabled or , PLC Development Kit Guide, Doc. # 001-53657 Rev. *C 33 A.2.4 34 Bottom Layer CY3275 , PWR UNSHIELD 470UH SMD L2, L3 2 470uH Pulse P0752.474NLT 14-Pin header, Female , Transistor NPN 45V 3A Q1 Value 1 Manufacturer Red Mfr. Part No. SML-LXT0805IW-TR Zetex
Cypress Semiconductor
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opamp 4009 RC0603FR-074R99L RC0603FR-074K7L MCR03EZPFX3300 3352T-1-103LF ERJ-6GEYJ102V MCR03EZPFX7501

PBHV9215Z,115

Abstract: Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD , PBHV9215Z 150 V, 2 A PNP high-voltage low VCEsat (BISS) transistor Rev. 01 â'" 11 December 2009 , gain (hFE) at high IC AEC-Q101 qualified Medium power SMD plastic package 1.3 Applications Ì Ì , ] PBHV9215Z NXP Semiconductors 150 V, 2 A PNP high-voltage low VCEsat (BISS) transistor 2. Pinning , PBHV9215Z NXP Semiconductors 150 V, 2 A PNP high-voltage low VCEsat (BISS) transistor 5. Limiting
NXP Semiconductors
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PBHV9215Z,115 PBHV8215Z
Abstract: PBSM5240PF 40 V, 2 A PNP low VCEsat (BISS) transistor with N-channel Trench MOSFET Rev. 2 â'" 20 , VCEsat Breakthrough In Small Signal (BISS) transistor and N-channel Trench MOSFET. The device is housed in a leadless medium power SOT1118 Surface-Mounted Device (SMD) plastic package. 1.2 Features and , low VCEsat (BISS) transistor VCEO collector-emitter voltage open base [1] - â'1.8 A , low VCEsat (BISS) transistor VCBO collector-base voltage open emitter - â'40 V NXP Semiconductors
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samsung s3c2440 user manual

Abstract: schematic LG lcd backlight inverter distribute the output of one gate in the electronic circuit. FET The Field Effect Transistor, being , ) x 1 (8M x 4 x 2B) x 4 A24 x16 (4M x 4 x 4B) x 4 A[24:23] x32 (4M x 8 x 2B) x 4 A24 x32 (2M x 8 x 4B) x 4 A[24:23] x16 64Mb 128Mb x32 x8 (2M x 16 x 4B) x 2 , A1 A2 A3 A4 A5 A6 A7 A8 A9 A10 A11 A12 A24 A25 DQM0 DQM1 BA0 BA1 LDQM UDQM , A2 A3 A4 A5 A6 A7 A8 A9 A10 A11 A12 A24 A25 DQM2 DQM3 BA0 BA1 LDQM UDQM SCKE
Samsung Electronics
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SMDK2440 samsung s3c2440 user manual schematic LG lcd backlight inverter samsung s3c2440 arm920t s3c2440 arm schematic lcd inverter samsung lg philips lcd ic scaler S3C2440A MS24L244 F/16V F/25V F/36V

transistor SMD PB28

Abstract: transistor SMD PB29 A7 A7 A7 A7 22 A23 A23 A23 A23 23 A8 A8 A8 A8 24 A24 A24 A24 A24 25 A9 A9 A9 A9 26 A25 A25 A25 A25 27 A10 A10
Motorola
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transistor SMD PB28 transistor SMD PB29 PC MOTHERBOARD SERVICE MANUAL SMD A18 Transistor A29 SMD A22 SMD CODE MPC860DB MPC860SARDB MPC860TDB MPC860FADSDBUM/D

transistor SMD PB28

Abstract: A29 SMD A7 A7 A7 A7 22 A23 A23 A23 A23 23 A8 A8 A8 A8 24 A24 A24 A24 A24 25 A9 A9 A9 A9 26 A25 A25 A25 A25 27 A10 A10
Motorola
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LXT970 Motorola diode SMD code B14 POE-A MPC860 equivalent MPC860SAR MPC860T LXT970QC TG-223506 TG-223506ND 74LCX08D S-8051HN-CD-X

LM6639

Abstract: . 33 A.2.4 Bottom Layer , transistors are used in the power amplification stage. Q1 This transistor controls whether transmission , ] Feedback A.2.4 34 Bottom Layer CY3273 Cypress Low Voltage Powerline Communication Evaluation , CAPACITOR, CERAMIC, .1UF, 25V, 5%, X7R, 0603, SMD C1, C5, C7, C9, C11 5 CAPACITOR, CERAMIC, 22PF, 100V, 5%, C0G, 0603, SMD C2, C3 CAPACITOR, CERAMIC, .01UF, 25V, 5%, N0G, 0603, SMD
Cypress Semiconductor
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LM6639 50KHCT-ND MCR03EZPFX1002 RHM10 MCR03EZPFX7150 RHM715HCT-ND MCR03EZPFX2400

HS3182-8

Abstract: D16.3 -55°C to +125°C HS4-3182-8 J28.A -55°C to +125°C SMD# D16.3 -55°C to +125°C CLCC HS1-3182-9+ -55°C to +125°C SMD# 3 1 8 2 Description Features , t 4 , â'ž 3 , â'ž 2 , ; 1 . â'ž24 â'ž27, ,26. 25 CLK NC y DATA (A) NC NC X L , m m end ed O p eratin g C o nd itio n s Transistor C o u n t. 133 Operating
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HS3182-8 HS1-3182-8 5962-8687901EA HS-3182 HS-3282 M302271 H30SS71
Abstract: ) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic , PBSS5612PA 12 V, 6 A PNP low VCEsat (BISS) transistor Rev. 01 â'" 7 May 2010 Product data , heat sink for excellent thermal and electrical conductivity Leadless small SMD plastic package with , 12 V, 6 A PNP low VCEsat (BISS) transistor 2. Pinning information Table 2. Pinning Pin , (BISS) transistor Table 5. Limiting values â'¦continued In accordance with the Absolute Maximum NXP Semiconductors
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PBSS4612PA
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