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LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ISW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy

SMD 8A TRANSISTOR

Catalog Datasheet MFG & Type PDF Document Tags

JST SOT-23

Abstract: smd transistor l6 ZENER DIODE BZV55C22 SOD-80 88 ZENER DIODE BZV55C75 SOD-80 89 TRANSISTOR SMD BC857B SOT23 90 TRANSISTOR SMD BC846B SOT23 91 TRANSISTOR Z RESISTOR PDTC114ET SOT23 92 WASHER , BOM STEVAL-ISS001V1 PART TYPE 1 DIODE SMD BAS16 SOT23 2 RESISTOR SMD 1K 1% 0.125W 100PPM PACK. 0805 3 RESISTOR SMD 2K2 1% 0.125W 100PPM PACK. 0805 4 RESISTOR SMD 3K3 1% 0.125W 100PPM PACK. 0805 5 RESISTOR SMD 4K7 1% 0.125W 100PPM PACK. 0805 6 RESISTOR SMD 10K 1% 0.125W
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JST SOT-23 smd transistor l6 smd transistor 2y R135 VARISTOR diode zener c55 103 resistor pack 175VAC 470UF RAD11 RAD12 RAD10A RAD13A

SMD TRANSISTOR L6

Abstract: transistor SMD Y1 SOD-80 2 QTY D36, D49 90 TRANSISTOR SMD BC857B SOT23 2 QTY Q12, Q14 91 TRANSISTOR SMD BC846B SOT23 1 QTY Q13 92 TRANSISTOR Z RESISTOR PDTC114ET SOT23 3 QTY U4, U6, U7 93 , , D11, D12, D13, D14, D15, D16, D17, D18, D19, D20, 22 QTY D21, D22, D23, D24 1 DIODE SMD BAS16 SOT23 2 RESISTOR SMD 1K 1% 0.125W 100PPM OBUD. 0805 5 QTY R26, R37, R38, R154, R155 3 RESISTOR SMD 2K2 1% 0.125W 100PPM OBUD. 0805 6 QTY R118, R119, R120, R121, R144, R175 4 RESISTOR
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transistor SMD Y1 y1 smd transistor SMD TRANSISTOR Y1 1P smd transistor y2 smd transistor resistor smd 103 STEVAL-ISS001V2 300VAC TI50/30 TI700/24/1 PC817C SFH620A-2

68w Transistor smd

Abstract: bbc 127 324 DIODE Hermetic SMD PCB 85ºC Hermetic PCB 12.5 x 7.5 x 10 16.0 x 11.0 x 11.5 20.2 x 10 x 10.6 , , Alternate Pin Out Transistor Driver Willow Technologies Limited, Shawlands Court, Newchapel Rd , transient suppresion Transistor Driver, Metal Housing, Custom, Diode for coil mercury wetted , 1C/O 1N/O 1C/O 1N/O 1C/O 1N/O 1N/C 1C/O Switching Current 8A 8A 10A Switching , 1.1kVA 300W 150W 4kVA 1.25kVA 1C/O 8A 250VAC 1.2kVA / 240W 2.5kVA / 300W 2kVA 3
Willow Technologies
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HG4100 68w Transistor smd bbc 127 324 DIODE TRANSISTOR SMD 13W smd transistor yb lamp indicator 115vac 400hz 18w smd transistor HG4516 HG4507 HG4078B SGR46G 125VAC

Diode SMD ED 7ca

Abstract: alps 502 RD CHARACTERISTICS If(av) 8A Vrrm 600V trr (typ) 25ns Vf (max) 1.5 V FEATURESAND BENEFITS â  SPECIFIC TO , OVERALL POWER LOSSES IN BOTH THE DIODE AND THE COMPANION TRANSISTOR. . HIGH FREQUENCY OPERATIONS. . HIGH , isolated SMD with copper tab DESCRIPTION The TURBOSWITCH is a very high performance series of ultra-fast , power dissipation (see fig. 2) lF(AV) = 8A S = 0.5 Tc = 118*C 14.5 w Pmax Total power dissipation Pmax , Parameter Test Conditions Min Typ Max Unit Vf - Forward voltage drop If = 8A Tj = 25°C 1.75 V Tj
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STTA806M Diode SMD ED 7ca alps 502 RD SMD 8A TRANSISTOR transistor smd 1FT alps 502 C PSO-10 SO-10

SMD 8A TRANSISTOR

Abstract: smd transistor 8A IC MOSFET SMD Type MOS Field Effect Transistor 2SK3484 TO-252 Features Super low , +0.28 1.50-0.1 +0.1 0.80-0.1 +0.15 5.55-0.15 MAX. (VGS = 4.5 V, ID = 8A) Low Ciss: Ciss = , = 8A) +0.2 9.70-0.2 RDS(on)1 = 125m +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 , admittance Max Unit 10 A 10 2.0 2.5 V Yfs VDS=10V,ID=8A RDS(on)1 VGS=10V,ID=8A 100 125 m RDS(on)2 Drain to source on-state resistance VGS=4.5V,ID=8A 110 148
Kexin
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smd transistor 8A transistor SMD 8A

T250AC-16-4C

Abstract: transistor c323 inductor is required to completely decay to zero during the `off' period of the transistor switch before , this case a simple NPN bipolar transistor is used to ground the SS pin whenever the CONV_OFF control , combination of both through-hole (T/H) and surface mount devices (SMD) were used. T/H components are mounted on the top side of the PCB and SMD parts on the underside. The layout detailed in Fig. 22 & Fig. 23 , & 8-A Load Fig. 12 V & I Input AC Waveforms; 220 V AC-Line & 8-A Load Fig. 13 PFC Inductor
Texas Instruments
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T250AC-16-4C transistor c323 Payton T250AC 1N5711 SMD D304 diode 1003 smd resistor SLUU341B PR883 24-VDC

smd transistor xf

Abstract: Diode SMD ED 8A CHARACTERISTICS I f (a v ) ULTRA-FAST HIGH VOLTAGE DIODE PRELIMINAY DATASHEET 8A 1200V 50ns 2.0V a- V , . VERY LOW OVERALL POWER LOSSES IN BOTH THE DIODE AND THE COMPANION TRANSISTOR. HIGH FREQUENCY AND/OR HIGH PULSED CURRENT OPERATION. SMD PACKAGE NC d 2p a k (Plastic) DESCRIPTION TURBOSWITCH , fig. 2) Total power dissipation Pmax = P1 + P3 (P3=10% P1) I f (A V ) = 8A 5 = 0 .5 Tc = 105 , CHARACTERISTICS Symbol VF Parameter Forward voltage drop (see Fig.2) Test Conditions If =8A Tj = 25°C Tj = 125
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smd transistor xf Diode SMD ED 8A smd transistor 2p data diode ed 8a transistor smd z a smd diode ED 08 STTA812G

SMD 8A TRANSISTOR

Abstract: smd transistor 8A MOSFET SMD Type Mos Field Effect Power Transistor 2SJ302 TO-263 +0.1 1.27-0.1 Features , 2.54 +0.2 2.54-0.2 RDS(on) 0.24 +0.1 1.27-0.1 (VGS=-10V,ID=-8A) +0.2 8.7-0.2 RDS(on , =-1mA Yfs Max -10 VDS=-60V,VGS=0 Gate leakage current Min -1.0 VDS=-10V,ID=-8A -2.0 , =-6A Drain to source on-state resistance VGS=-10V,ID=-8A Rise time Turn-off delay time Fall time , ) VDS=-10V,VGS=0,f=1MHZ VGS(on)=-10V,VDD=-30V,ID=-8A RL=3.75 ,RG=10 tf 130 ns Total
Kexin
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diode 60V 8A 1200PF

SMD 8A TRANSISTOR

Abstract: Diode SMD ED 8A PRODUCT CHARACTERISTICS IF(AV) 8A VRRM 1200V trr (typ) 50ns VF (max) 2.0V A K , BOTH THE DIODE AND THE COMPANION TRANSISTOR. HIGH FREQUENCY AND/OR HIGH PULSED CURRENT OPERATION. SMD PACKAGE A NC D2PAK (Plastic) DESCRIPTION TURBOSWITCH 1200V drastically cuts losses in , (see fig. 2) Pmax IF(AV) = 8A = 0.5 Tc = 105°C 19.5 W Total power dissipation Pmax = , IF = 8A VR = 0.8 x VRRM Max Unit Tj = 25°C 2.2 V Tj = 125°C VF Parameter
STMicroelectronics
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TRANSISTOR 935 SMD fast recovery diode 1200v SMD smd transistor ed

SMD 8A TRANSISTOR

Abstract: transistor SMD 8A MOSFET SMD Type P-Channel 2.5V Specified Enhancement Mode Field Effect Transistor KDB4020P(FDB4020P) TO-263 +0.1 1.27-0.1 Features -16 A, -20 V. RDS(on) = 0.08 Ù @ VGS = -4.5 V Unit: mm , -55 to +175 www.kexin.com.cn 1 MOSFET SMD Type KDB4020P(FDB4020P) Electrical , threshold voltage VGS(th) VDS = VGS, ID = -250ìA VGS=-4.5V,ID=-8A 0.068 0.08 Drain to source on-state resistance RDS(on) VGS=-4.5V,ID=-8A,TJ=125 0.098 0.13 VGS=-2.5V,ID=-7A A
Kexin
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smd transistor 2p data

Abstract: smd transistor JJ CHARACTERISTICS I f (a v ) ULTRA-FAST HIGH VOLTAGE DIODE PRELIMINAY DATASHEET 8A 1200V 50ns 2.0V a V , . VERY LOW OVERALL POWER LOSSES IN BOTH THE DIODE AND THE COMPANION TRANSISTOR. HIGH FREQUENCY AND/OR HIGH PULSED CURRENT OPERATION. SMD PACKAGE NC d 2p a k (Plastic) DESCRIPTION TURBOSW ITCH , fig. 2) Total power dissipation Pmax = P1 + P3 (P3=10% P1) I f (AV) = 8A 5 = 0 .5 Tc = 105 , d lF /d t = -500 A/|is If = 8A 12 25 If= 8 A 1.2 / Min Typ Max Unit ns 50 100 A Irm Maximum
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smd transistor JJ diode 500A 1200v

IC 7805

Abstract: 7812 voltage regulator 5A 1N5408 (3A, 50V-1000V) S6A05 - S6A10 (BA, 50V-1000V) BRIDGE RECTIFIERS 1A, 1.5A, 2A, 3A, 4A, 5A, 6A, 8A , BRIDGE RECTIFIERS 1A, 1.5A, 2A, 3A, 4A, 6A 8A, 10A, 15A, 25A, 35A HIGH EFFICIENCY RECTIFIERS SHER101 - , 1.5A, 2A, 3Ã' (50V-400V, 150ns) 4A, 6A, 8A (600V, 250ns) 10A (800V-1000V, 500ns) FAST RECOVERY GLASS , (SMD DIODE SERIES) SEÃi&SSSg^^ » HìjffiÌJ1SJiÌSÌ+ » WJHHHrtHH (S) (N) (D) @ 9\ ©  , CLIP: 5 X 20mm © FUSE HOLDER: © REGULATOR IC: 7805 7812 7824 7905 7912 7915 ® TRANSISTOR: © S.C.R
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IC 7805 7812 voltage regulator 5A REGULATOR IC 7805 REGULATOR IC 7824 1n1001 6a smd transistor 1N4001 1N4007 1N5391 1N5399 1N5400 1N1001G

ts 4141 TRANSISTOR smd

Abstract: SILICON PLANAR EPITAXIAL TRANSISTOR BCX41 PI N CONFIGURATI ON ( NPN) SOT-23 Formed SMD Package 1 = BASE 2 = EM ITTER 3 = COLLECTOR 3 1 2 MARKING BCX41=EK Medium Power Transistor , BCX41 CMBD120554, CMBD1205 CMBD1204, CMBD1205 SOT-23 Formed SMD Package L SOT-23 D DIM , 2 J SMD Plastic Package 3 E S O R F G M P G 3º Min Max 7º R â'" H â'" 1.30 S 2° ° J 2.10 2.64 T 2° 10° N G
Continental Device India
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ts 4141 TRANSISTOR smd C-120 240310E

MARKING SMD PNP TRANSISTOR 2a

Abstract: SMD 8A TRANSISTOR Transistors SMD Type PNP Silicon Power Switching Transistor FCX789A Features 2W power dissipation. 8A peak pulse current. Excellent HFE characteristics up to 10 Amps. Extremely low saturation voltage E.g. 10mv Typ. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -25 V Collector-emitter voltage VCEO -25 V Emitter-base , temperature range www.kexin.com.cn 1 Transistors SMD Type FCX789A Electrical Characteristics Ta
Kexin
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MARKING SMD PNP TRANSISTOR 2a SMD TRANSISTOR MARKING 2A TRANSISTOR SMD PNP 1A SMD BR TRANSISTOR SMD 1a 9 MARKING SMD PNP TRANSISTOR 1a

MARKING SMD PNP TRANSISTOR 2a

Abstract: FCX717 Transistors SMD Type PNP Silicon Power Switching Transistor FCX717 Features 2W power dissipation. 10A peak pulse current. Excellent HFE characteristics up to 10 Amps. Extremely low saturation voltage E.g. 12mv Typ. Extremely low equivalent on-resistance. RCE(sat) 77mÙ at 3A. Absolute Maximum , www.kexin.com.cn 1 Transistors SMD Type FCX717 Electrical Characteristics Ta = 25 Parameter Symbol , frequency hFE fT IC=-10mA,VCE=-2V IC=-0.1A,VCE=-2V IC=-3A,VCE=-2V IC=-8A,VCE=-2V IC=-10A,VCE
Kexin
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MARKING SMD PNP TRANSISTOR SMD BR 12 100MH

TRANSISTOR SMD MARKING CODE 2x

Abstract: TRANSISTOR SMD MARKING CODE 2.T Reduced RFI and EMI · Reduced Power Loss in Diode and Switching Transistor · Higher Frequency Operation , IR = 100µA VF Forward Voltage - 1.4 1.7 V IF = 8A See Fig. 1 - 1.7 2.1 V IF = 16A - 1.4 1.7 V IF = 8A, TJ = 125°C Max. Reverse Leakage Current , - 124 240 - 210 - A IF = 1.0A, diF/dt = 200A/µA, VR = 30V IF = 8A VR = 200V , -20618 rev. B 07/02 20 80 If = 16A If = 8A If = 4A 70 Irr (A) trr (ns) 50 40 10
International Rectifier
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HFA08SD60S TRANSISTOR SMD MARKING CODE 2x TRANSISTOR SMD MARKING CODE 2.T TRANSISTOR SMD 2X K ULTRAFAST RECTIFIER 16A 600V vf 1.7 TRANSISTOR SMD 2x t smd code HF transistor PD-20618 SMD-220
Abstract: • Reduced RFI and EMI • Reduced Power Loss in Diode and Switching Transistor • Higher Frequency , 100µA VF Forward Voltage - 1.4 1.7 V IF = 8A See Fig. 1 - 1.7 2.1 V IF = 16A - 1.4 1.7 V IF = 8A, TJ = 125°C - 0.3 5.0 µA VR = VR Rated , Rate of Fall of recovery Current 55 TJ = 25°C IF = 8A 55 90 TJ = 125°C - 3.5 , 80 If = 16A If = 8A If = 4A 70 Irr (A) trr (ns) 50 40 30 20 10 5 Vr = 200V International Rectifier
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PD-96062 HFA08SD60SP P002X

Stepper driver board with L297 L6203 circuit

Abstract: PSO-36 CROWBAR PROTECTION SCR 450, 30A Transistor in TO218 450, 80A Transistor in Isotop 450, 24A Darlington , diode 8A. 35 ns 2x10A, 35 ns Diode 12A, 600V, 50 ns Diode Power Schottky Diode FRED diodes , . SMLVT3V3 400 W SMD Transil 600 W SMD Transil 1500 W SMD Transil 600 W SMD Transil TD230
STMicroelectronics
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GS-D250M GS-D350M GS-D550 Stepper driver board with L297 L6203 circuit PSO-36 Stepper driver board with L297 L6203 high power LED DRIVER MC34063 uc3842 motor driver circuit MC34063 driver led LM317 LM317MDT LM323 LM337 LM338K LM350K

TRANSISTOR SMD MARKING CODE 2x

Abstract: TRANSISTOR SMD MARKING CODE 210 Reduced RFI and EMI · Reduced Power Loss in Diode and Switching Transistor · Higher Frequency Operation , IR = 100µA VF Forward Voltage - 1.4 1.7 V IF = 8A See Fig. 1 - 1.7 2.1 V IF = 16A - 1.4 1.7 V IF = 8A, TJ = 125°C Max. Reverse Leakage Current , - 124 240 - 210 - A IF = 1.0A, diF/dt = 200A/µA, VR = 30V IF = 8A VR = 200V , -20618 rev. A 04/02 20 80 If = 16A If = 8A If = 4A 70 Irr (A) trr (ns) 50 40 10
International Rectifier
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TRANSISTOR SMD MARKING CODE 210 TRANSISTOR SMD MARKING CODE 8a marking code ff SMD Transistor smd 8a 046 TRANSISTOR SMD MARKING CODE 360 smd marking code 8A

TRANSISTOR SMD 2x t

Abstract: smd 8a 046 Power Loss in Diode and Switching Transistor Higher Frequency Operation Reduced Snubbing Reduced , Conditions 600 1.4 1.7 1.4 0.3 100 10 8.0 1.7 2.1 1.7 5.0 500 25 V V V V µA µA pF nH IR = 100µA IF = 8A IF = 16A IF = 8A, TJ = 125°C VR = VR Rated TJ = 125°C, VR = 0.8 x VR Rated VR = 200V Measured lead to lead , = 8A VR = 200V diF /dt = 200A/µs IRRM Peak Recovery Current - A TJ = 25°C TJ = 125 , ) Fig. 5 - Typical Reverse Recovery vs. di F /dt Vr = 200V Tj = 125°C Tj = 25°C 20 If = 16A If = 8A
International Rectifier
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