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SM8GZ47 SM8JZ47 SM8GZ47A SM8JZ47A 13-10H1A M8GZ47 M8JZ47 000707EAA - Datasheet Archive
TOSHIBA BI-DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE SM8GZ47,SM8JZ47,SM8GZ47A,SM8JZ47A AC POWER CONTROL APPLICATIONS Unit:
SM8GZ47 SM8GZ47,SM8JZ47 SM8JZ47,SM8GZ47A SM8GZ47A,SM8JZ47A SM8JZ47A TOSHIBA BI-DIRECTIONAL TRIODE THYRISTOR SILICON PLANAR TYPE SM8GZ47 SM8GZ47,SM8JZ47 SM8JZ47,SM8GZ47A SM8GZ47A,SM8JZ47A SM8JZ47A AC POWER CONTROL APPLICATIONS Unit: mm l Repetitive Peak Off-State Voltage : VDRM = 400, 600V l R.M.S ON-State Current : IT (RMS) = 8A l High Commutating (dv / dt) l Isolation Voltage : VISOL = 1500V AC MAXIMUM RATINGS CHARACTERISTIC Repetitive Peak Off-State Voltage SM8GZ47 SM8GZ47 SM8GZ47A SM8GZ47A SM8JZ47 SM8JZ47 SM8JZ47A SM8JZ47A SYMBOL V 600 IT (RMS) Peak One Cycle Surge On-State Current (Non-Repetitive) ITSM 2 UNIT 400 VDRM R.M.S On-State Current (Full Sine Waveform Tc = 83°C) I t Limit Value RATING 2 8 80 (50Hz) 88 (60Hz) A A 2 JEDEC JEITA TOSHIBA 13-10H1A 13-10H1A I t 32 A s Critical Rate of Rise of On-State Current (Note 1) di / dt 50 A / µs Peak Gate Power Dissipation PGM 5 W PG (AV) 0.5 W Peak Gate Voltage VGM 10 V Peak Gate Current IGM 2 A Tj -40~125 °C ITM 12A Tstg -40~125 °C tgw 10µs VISOL 1500 V tgr 250ns Average Gate Power Dissipation Junction Temperature Storage Temperature Range Isolation Voltage (AC, t = 1min.) 1 Weight: 1.7g Note 1: di / dt Test Condition VDRM = 0.5×Rated iGP = IGT×2.0 2001-07-13 SM8GZ47 SM8GZ47,SM8JZ47 SM8JZ47,SM8GZ47A SM8GZ47A,SM8JZ47A SM8JZ47A ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL MIN TYP. MAX UNIT 20 µA T2 (+), Gate (+) 1.5 T2 (+), Gate (-) 1.5 T2 (-), Gate (-) 1.5 IV T2 (-), Gate (+) I T2 (+), Gate (+) 30 II T2 (+), Gate (-) 30 III T2 (-), Gate (-) 30 IV T2 (-), Gate (+) T2 (+), Gate (+) 20 II T2 (+), Gate (-) 20 III T2 (-), Gate (-) 20 IV T2 (-), Gate (+) Repetitive Peak Off-State Current IDRM TEST CONDITION VDRM = Rated I II Gate Trigger Voltage III SM8GZ47 SM8GZ47 SM8JZ47 SM8JZ47 Gate Trigger Current I SM8GZ47A SM8GZ47A SM8JZ47A SM8JZ47A VGT IGT VD = 12V RL = 20 VD = 12V RL = 20 V mA Peak On-State Voltage VTM ITM = 12A 1.5 V Gate Non-Trigger Voltage VGD VD = Rated, Tc = 125°C 0.2 V VD = 12V, ITM = 1A 50 mA Junction to Case, AC 3.6 °C / W 300 200 10 Holding Current IH Thermal Resistance Critical Rate of Rise of Off-State Voltage Critical Rate of Rise of Off-State Voltage at Commutation Rth (j-c) SM8GZ47 SM8GZ47 SM8JZ47 SM8JZ47 SM8GZ47A SM8GZ47A SM8JZ47A SM8JZ47A SM8GZ47 SM8GZ47 SM8JZ47 SM8JZ47 SM8GZ47A SM8GZ47A SM8JZ47A SM8JZ47A dv / dt (dv / dt) c VDRM = Rated, Tj = 125°C Exponential Rise VDRM = 400V, Tj = 125°C (di /dt) c = -4.5A / ms V / µs V / µs 4 MARKING * NUMBER *1 *2 *3 SYMBOL MARK TOSHIBA PRODUCT MARK SM8GZ47 SM8GZ47, SM8GZ47A SM8GZ47A TYPE M8GZ47 M8GZ47 SM8JZ47 SM8JZ47, SM8JZ47A SM8JZ47A M8JZ47 M8JZ47 SM8GZ47A SM8GZ47A, SM8JZ47A SM8JZ47A A Example 8A : January 1998 *4 8B : Febrary 1998 8L : December 1998 2 2001-07-13 SM8GZ47 SM8GZ47,SM8JZ47 SM8JZ47,SM8GZ47A SM8GZ47A,SM8JZ47A SM8JZ47A 3 2001-07-13 SM8GZ47 SM8GZ47,SM8JZ47 SM8JZ47,SM8GZ47A SM8GZ47A,SM8JZ47A SM8JZ47A 4 2001-07-13 SM8GZ47 SM8GZ47,SM8JZ47 SM8JZ47,SM8GZ47A SM8GZ47A,SM8JZ47A SM8JZ47A RESTRICTIONS ON PRODUCT USE 000707EAA 000707EAA · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. · The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. · The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 5 2001-07-13