NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
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SM2G150US60 -300A/ - Datasheet Archive
SM2G150US60 IGBT MODULE FEATURES ' High Speed Switching ' Low Conduction Loss : VCE(sat) = 2.1 V (typ) ' Fast & Soft
Preliminary SM2G150US60 SM2G150US60 IGBT MODULE FEATURES ' High Speed Switching ' Low Conduction Loss : VCE(sat) = 2.1 V (typ) ' Fast & Soft Anti-Parallel FWD ' Short circuit rated : Min 10uS at Tc=100 & APPLICATIONS ' ' ' ' ' Package code : 7-PM-BA General Purpose Inverters Welding Machine Induction Heating UPS , CVCF Robotics , Servo Controls G2 E2 C2E1 E2 C1 E1 G1 Internal Circuit Diagram ABSOLUTE MAXIMUM RATINGS Symbol Characteristics VCES Collector-Emitter Voltage VGES Gate-Emitter Voltage IC Collector Current @ Tc = 25 150 A ICM (1) Pulsed Collector Current 300 A IF Diode Continuous Forward Current @ Tc = 25 150 A IFM Diode Maximum Forward Current 300 A PC Maximum Power Dissipation @Tc = 25 625 W Tj Operating Junction Temperature -40 ~ 150 Tstg Storage Temperature Range -40 ~ 125 Viso Isolation Voltage @ AC 1 min 2500 V 2.0 N.m 2.5 N.m Rating Units 600 V 20 & & & Mounting Torque @Power terminals screw :M5 Mounting screw :M6 V & & Notes: (1) Repetitive Rating : Pulse width Limited by Max.Junction Temperature Rev.B ©1999 Fairchild Semiconductor Corporation Preliminary SM2G150US60 SM2G150US60 IGBT MODULE ELECTRICAL CHARACTERISTICS (IGBT PART) (Tc=25 ,Unless Otherwise Specified) Symbol Characteristics Test Conditions Min BVCES C - E Breakdown Voltage VGE = 0V , IC = 250 600 - - CES/ Temperature Coeff. of VGE = 0V , IC = 1mA - 0.6 - J Breakdown Voltage ZV ZT Typ Max Units V V/ VGE(th) G - E threshold voltage IC =150mA , VCE = VGE 5 6 8.5 V ICES Collector cutoff Current VCE = VCES , VGE = 0V - - 250 uA IGES G - E leakage Current VGE = VGES , VCE = 0V - - 100 nA VCE(sat) Collector to Emitter Ic=150A, VGE=15V @Tc= 25 - 2.1 2.7 V - 2.7 - V - 14000 - pF - 1200 - pF - 250 - pF Cies Input capacitance Ic=150A, V =15V @Tc=100 V = 0V , f = 1( Coes Output capacitance VCE = 30V Cres Reverse transfer capacitance td(on) Turn on delay time VCC = 300V , IC = 150A - 130 - ns tr Turn on rise time VGE = 15V - 65 - ns td(off) Turn off delay time RG = 4.2 - 370 - ns tf Turn off fall time Inductive Load - 90 250 ns Eon Turn on Switching Loss - 1.4 - mJ Eoff Turn off Switching Loss - 4.0 - mJ Ets Total Switching Loss - 5.4 10 mJ Tsc Short Circuit withstand Time 10 - - uS saturation voltage GE GE n Vcc = 300V, VGE = 15V @Tc = 100 Qg Total Gate Charge Vcc = 300V - 660 990 nC Qge Gate-Emitter Charge VGE = 15V - 120 - nC Qgc Gate-Collector Charge Ic = 150A - 280 - nC Preliminary SM2G150US60 SM2G150US60 IGBT MODULE ELECTRICAL CHARACTERISTICS (DIODE PART) (Tc=25 ,Unless Otherwise Specified) Symbol VFM Characteristics Diode Forward Voltage Test Conditions IF=150A Irr Diode Reverse IF=150A, VR=200V Recovery Time Trr di/dt= -300A/uS Diode Peak Reverse Recovery Current Qrr Diode Reverse Recovery Charge Min Min Typ Tc =100 Tc =25 Tc =100 Tc =25 Tc =100 Tc =25 Tc =100 Tc =25 Max Units - 1.9 2.8 - 1.8 - - 90 130 - 130 - - 15 20 - 22 - - 675 1270 - 1430 V - nS A nC THERMAL RESISTANCE Symbol Characteristics R~JC Typ Max Units Junction-to-Case(IGBT Part, Per 1/2 Module) - 0.20 R~JC Junction-to-Case(DIODE Part, Per 1/2 Module) - 0.47 R~CS Case-to-Sink ( Conductive grease applied) - 0.13 /W /W /W Weight Weight of Module - 270 g Preliminary SM2G150US60 SM2G150US60 IGBT MODULE 400 400 15V 20V 20 15 13V 13 12V COLLECTOR CURRENT IC [A] COLLECTOR CURRENT Ic [A] 300 11V 200 V GE = 10V 300 12 11 200 VGE = 10V 100 100 Common Emitter Tc = 125 Common Emitter Tc = 25 0 0 2 4 6 8 0 0 2 4 6 8 10 COLLECTOR-EMITTER VOLTAGE VCE [V] 10 COLLECTOR- EMITTER VOLTAGE VCE [V] 400 400 Common Emitter Vce = 5V Common Emitter Vge = 15V 350 Tc = 25 125 300 COLLECTOR CURRENT Ic [A] COLECTOR CURRENT Ic [A] 300 200 100 Tc = 25 125 250 200 150 100 50 0 0 0 1 2 3 4 COLLECTOR-EMITTER VOLTAGE VCE [V] 5 0 4 8 12 16 GATE-EMITTER VOLTAGE VGE [V] 20 Preliminary SM2G150US60 SM2G150US60 IGBT MODULE 16 16 Common Emitter Tc = 125 Common Emitter Tc = 25 COLLECTOR-EMITTER VOLTAGE V CE [V] COLLECTOR-EMITTER VOLTAGE V CE [V] 12 8 300 4 150 IC = 60A 0 12 8 300 4 150 IC = 60 A 0 0 4 8 12 16 20 0 4 1 Tc = 25 8 12 16 20 GATE-EMITTER VOLTAGE VGE [V] GATE-EMITTER VOLTAGE VGE [V] Tc = 25 Thermal Response [Zthjc] [ /W] Thermal Response [Zthjc] [ 0.5 0.5 /W] 1 0.1 IGBT Stage 0.2 0.1 0.05 0.01 0.02 0.01 DIODE Stage 0.1 0.2 0.1 0.05 0.02 0.01 0.01 single pulse single pulse 1E-3 1E-3 10 -5 10 -4 10 -3 10 -2 10 -1 10 Rectangular Pulse Duration [sec] 0 10 1 10 -5 10 -4 10 -3 10 -2 10 -1 10 Rectangular Pulse Duration [sec] 0 10 1 Preliminary SM2G150US60 SM2G150US60 IGBT MODULE 400 30000 Common Cathode Vge = 0V Tc = 25 125 10000 CAPACITANCE C [pF] FORWARD CURRENT I F [A] 300 Cies 200 Coes 1000 100 Cres Common Emitter Vge = 0V f = 1Mhz Tc = 25 200 0 0 1 2 3 4 1 FORWARD VOLTAGE VF [V] 400 30 10 16 Common Emitter RL = 2 Tc =25 + Vcc = 300V Rg = 4.2 Tc = 125 + 14 Esw 300 12 10 200 8 6 100 4 ENERGY [mJ] 8 GATE-EMITTER VOLTAGE VGE [V] COLLECTOR-EMITTER VOLTAGE VCE [V) 10 COLLECTOR-EMITTER VOLTAGE VCE [V] 6 Eoff 4 Eon 2 2 0 0 0 200 400 CHARGE QG [nC] 600 0 0 25 50 75 100 125 COLLECTOR - EMITTER CURRENT IC [A] 150 Preliminary SM2G150US60 SM2G150US60 IGBT MODULE 20 12 Vcc = 300V Ic = 150A Vcc = 300V Rg = 4.2 Vge = 15V + 10 Esw IC = 150A 15 ENERGY [mJ] ENERGY [mJ] 8 10 Eon Eoff 6 100A 4 5 2 0 20A 0 0 10 20 30 40 GATE - EMITTER RESISTANCE Rg [ 50 +] 20 40 60 80 100 120 CASE TEMPERATURE Tc [ ] 30 COMMON EMITTER Vcc = 300V 15V Vge = Rg =4.2 Common Cathode di/dt = -300A/ -300A/ + 1 Irr ] 20 Trr 10 SWITCHING TIME td(off) , tf [ PEAK REVERSE RECOVERY CURRENT Irr [A] REVERSE RECOVERY TIME Trr [x10ns] t d(off) 0.1 tf : Tc = 25 : Tc = 125 5 0 50 100 FORWARD CURRENT IF [A] 150 : Tc = 25 : Tc = 125 0.05 10 100 COLLECTOR CURRENT Ic [A] Preliminary SM2G150US60 SM2G150US60 IGBT MODULE 0.5 Common Emitter Vcc = 300V Vge = 15V Rg =4.2 td(off) + 1 SWITCHING TIME toff , tf [ ] ] SWITCHING TIME td(on) , tr [ Common Emitter Vcc = 300V Vge = 15V Ic =150A td(on) 0.1 tr tf 0.1 & & : Tc = 25 : Tc = 125 0.01 10 & & : Tc = 25 : Tc = 125 0.05 100 3 10 GATE RESISTANCE RG [ COLLECTOR CURRENT IC (A) 1 50 +] 600 Common Emitter Vcc = 300V Vge = 15V Ic =150A Ic MAX. (Pulsed) 300 Ic MAX. (Continuous) 50 tr 0.1 & & : Tc = 25 : Tc = 125 0.05 3 10 GATE RESISTANCE RG [+ ] 50 COLLECTOR CURRENT Ic [A] SWITCHING TIME td(on) , tr [ ] td(on) 100 1ms 100 30 DC Operation 10 3 1 0.3 1 3 10 30 100 300 COLLECTOR-EMITTER VOLTAGE VCE [V] 1000 Preliminary SM2G150US60 SM2G150US60 400 IGBT MODULE & + Tj 125 Vge = 15V Rg = 4.2 300 Vcc Rg +/- 15V 200 90% 10% Vge 100 Vce 90% Ic 10% Td(off) Tf Td(on) Tr 0 0 100 200 300 400 500 600 700 COLLECTOR-EMITTER VOLTAGE VCE [V] Inductive Load Test Circuit and Waveforms 7-PM-BA = 02817,1* +2/( = 0 '3 7$3 7(50,1$/ W 1$0( 3/$7( 0$; COLLECTOR CURRENT I C [A] L Unit : mm Preliminary SM2G150US60 SM2G150US60 IGBT MODULE 7-PM-BB = 02817,1* +2/( = 0 '3 7$3 7(50,1$/ W 1$0( 3/$7( 0$; Unit : mm TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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