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Abstract: 60 .01 60 10 6 .01 100 500 .01 5 50 mA TE THC-4123 THC-4123 THC-4124 THC-4124 NPN Gen. Purpose 40 30 .01 .01 30 25 1 1 , .01 30 25 1 1 4 4 .01 .01 50 120 150 360 2 2 1 1 200 mA 200 mA SL SL THC-40D4 THC-40D4 THC-40D5 THC-40D5 NPN Silicon , THC-40D10 THC-40D10 ÏHC-40D11 HC-40D11 NPN Silicon Power 90t .1 90 f .1 75 75 10 10 5 5 .1 .1 50 120 150 360 100 100 2 2 1 A , 100 100 2 2 1A 1A SZ SZ THC-42C5 THC-42C5 THC-42C11 THC-42C11 NPN Silicon Power 55+ 90t .01 .01 45 80 100 100 5 5 .1 .1 , 100 300 .01 5 200 mA ST THC-3877 THC-3877 NPN Low Level 70 1.0 70 1 4 1.0 20 250 2 4.5 50 mA TE tBVcss ... OCR Scan
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1 pages,
58.75 Kb

Transistor BC212A TRANSISTOR TZ sl diode bc337 chip te 901 pnp Transistor Transistor BC307b TE 901 THC-4125 BC169 THC-40D5 BC328A bc327-40 Transistor BC413C THC-2484 THC-4123 THC-2484 abstract
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Abstract: e TRAN SYS EUCTRONICS LIMITED BULD25D BULD25D, BULD25DR BULD25DR, BULD25SL BULD25SL NPN SILICON TRANSISTOR WITH , -50 -25 0 25 50 75 100 125 150 Tc - Case Temperature - °C Figure 3. BULD125KC BULD125KC NPN SILICON , Tightly Controlled Transistor Storage Times Voltage Matched Integrated Transistor and Diode , VIEW) NC - No internal connection SL PACKAGE (TOP VIEW) PACKAGE PART # SUFFIX Small-outline D Small-outline taped and reeled DR Single-in-line SL device symbol 3 description The new BULDxx range of ... OCR Scan
datasheet

7 pages,
620.25 Kb

TRANSISTOR sl 100 BULD125KC BULD25D BULD25DR BULD25SL JLD125KC- NPN transistor Electronic ballast of transistor sl 100 sl 100 transistor T1 SL 100 NPN Transistor SL 100 NPN Transistor BULD25D abstract
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Abstract: BULD25D BULD25D, BULD25DR BULD25DR, BULD25SL BULD25SL NPN SILICON TRANSISTOR WITH INTEGRATED DIODE Copyright © 1997, Power , testing of all parameters. 1 BULD25D BULD25D, BULD25DR BULD25DR, BULD25SL BULD25SL NPN SILICON TRANSISTOR WITH INTEGRATED , us 0.25 0.35 us BULD25D BULD25D, BULD25DR BULD25DR, BULD25SL BULD25SL NPN SILICON TRANSISTOR WITH INTEGRATED , , BULD25SL BULD25SL NPN SILICON TRANSISTOR WITH INTEGRATED DIODE JULY 1994 - REVISED SEPTEMBER 1997 MAXIMUM SAFE , , BULD25DR BULD25DR, BULD25SL BULD25SL NPN SILICON TRANSISTOR WITH INTEGRATED DIODE JULY 1994 - REVISED SEPTEMBER 1997 ... Original
datasheet

12 pages,
275.88 Kb

BULD25SL BULD25DR BULD25D T1 SL 100 NPN Transistor SL 100 NPN Transistor BULD25D abstract
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Abstract: DISCRETE SEMICONDUCTORS DATA SHEET BLV99/SL UHF power transistor Product specification , Product specification UHF power transistor BLV99/SL LIMITING VALUES In accordance with the , Semiconductors Product specification UHF power transistor BLV99/SL CHARACTERISTICS Tj = 25 °C. , , typical values. Philips Semiconductors Product specification UHF power transistor BLV99/SL , Product specification UHF power transistor handbook, full pagewidth BLV99/SL ... Original
datasheet

10 pages,
55.01 Kb

transistor sl 100 blv99 SL 100 NPN Transistor BLV99/SL BLV99/SL abstract
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Abstract: DISCRETE SEMICONDUCTORS DATA SHEET BLU11/SL UHF power transistor Product specification July 1986 Philips Semiconductors Product specification UHF power transistor BLU11/SL DESCRIPTION FEATURES N-P-N silicon planar epitaxial transistor primarily intended for use in mobile , transistor BLU11/SL RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134 , Product specification UHF power transistor BLU11/SL CHARACTERISTICS Tj = 25 °C unless otherwise ... Original
datasheet

9 pages,
46.69 Kb

122d SL 100 NPN Transistor 122d transistor BLU11/SL BLU11/SL abstract
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Abstract: DISCRETE SEMICONDUCTORS DATA SHEET BLT92/SL UHF power transistor Product specification May 1989 Philips Semiconductors Product specification UHF power transistor DESCRIPTION NPN , Philips Semiconductors Product specification UHF power transistor BLT92/SL RATINGS Limiting , Semiconductors Product specification UHF power transistor BLT92/SL CHARACTERISTICS Tj = 25 °C unless , transistor BLT92/SL APPLICATION INFORMATION RF performance in CW operation (common-emitter circuit ... Original
datasheet

10 pages,
53.32 Kb

SL 100 NPN Transistor MDA300 BLT92 mda301 BLT92/SL BLT92/SL abstract
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Abstract: PHILIPS INTERNATIONAL bSE D B 711G-5ti 00L2b71 0 4^1 - PHIN BLT91/SL _J\_ U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor primarily intended for use in handheld radio stations , transistor has a 4-lead studless envelope with a ceramic cap (SOT-172D). All leads are isolated from the , Copyrighted By Its Respective Manufacturer PHILIPS INTERNATIONAL BLT91/SL bSE D 711DflSb 00bEb72 70S «RHIN , Respective Manufacturer PHILIPS INTERNATIONAL U.H.F. power transistor bSE D m TllQ-Sb 00EJSb73 bll - PHIN ... OCR Scan
datasheet

7 pages,
408.43 Kb

Philips 4312 020 International Power Sources ferroxcube wideband hf choke blt91 BLT91/SL BLT91/SL abstract
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Abstract: N AMER PHILIPS/DISCRETE tiTE T> m bbS3T31 DDEB77M DDEB77M S6S - APX BLT91/SL U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor primarily intended for use in handheld radio stations in the , Manufacturer N AMER PHILIPS/DISCRETE bTE D U.U.!-. power transistor bbSB^ai 0023770 120 - APX BLT91/SL , on a printed wiring board. • gold metallization ensures excellent reliability. The transistor has a , BLT91/SL fc.1E D ^53131 002"775 Mil IAPX RATINGS Limiting values in accordance with the Absolute ... OCR Scan
datasheet

7 pages,
405.45 Kb

of transistor sl 100 ferroxcube wideband hf choke blt91 DDEB77M BLT91/SL DDEB77M abstract
datasheet frame
Abstract: PHILIPS INTF-h-! bSE D m 711002b 00b2fab4 bCH HPHIN BLT90/SL A U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor primarily intended for use in handheld radio stations in the 900 MHz , circuit board {see Fig. 4). • gold metallization ensures excellent reliability. The transistor has a , PHILIPS INTERNATIONAL BLT90/SL J ^ bSE D - TllOaSb - ObEbbS S4S - PHIN RATINGS Limiting values in , INTERNATIONAL U.H.F. power transistor bSE D 711002b DObSbbb 4-1 [ PHIN CHARACTERISTICS Tj = 25 °C unless ... OCR Scan
datasheet

7 pages,
428.03 Kb

International Power Sources ferroxcube wideband hf choke 43120203664 SL 100 NPN Transistor BLT90/SL BLT90/SL abstract
datasheet frame
Abstract: PHILIPS INTERNATIONAL bSE D m 711002b 00bSb7ö 1T3 - BLT92/SL iPHIN UHF POWER TRANSISTOR NPN silicon planar epitaxial transistor primarily intended for use in handheld radio stations in the 900 MHz , transistor bSE D ES 711002b OObEböO -51 BLT92/SL 1PHIN CHARACTERISTICS Tj = 25 °C unless otherwise , transistor bSE D - 7110ä , Manufacturer PHILIPS INTERNATIONAL UHF power transistor b5E D - 7110â2fc. D0b2Liß4 4T7 HPHIN BLT92/SL X ... OCR Scan
datasheet

7 pages,
419.92 Kb

SL 100 NPN Transistor philips choke ferrite of transistor sl 100 mml 600 International Power Sources ferrite 4312 ferrite beat philips rf choke ferrite BLT92/SL BLT92/SL abstract
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Extended Electronics Archive (Experimental)

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Over 1.1 million files (1986-2013): html articles, reference designs, gerber files, chemical content, spice models, programs, code, pricing, images, circuits, parametric data, RoHS data, cross references, pcns, military data, and more. Please note that due to their age, these files do not always format correctly in modern browsers. Disclaimer.
 
NXP Q3 PMP4201Y PMP4201Y PMP4201Y PMP4201Y NPN transistors NXP Q4 PDTC124TT PDTC124TT PDTC124TT PDTC124TT transistor-npn NXP Q5 PDTC114TT PDTC114TT PDTC114TT PDTC114TT transistor-npn NXP Q6 PMGD280UN PMGD280UN PMGD280UN PMGD280UN N-channel MOSFET NXP Q7 MMBT3904 MMBT3904 MMBT3904 MMBT3904 transistor-npn NXP Q8 MMBT3904 MMBT3904 MMBT3904 MMBT3904 transistor-npn NXP RESET PTS -ND C11 100uF Capacitor Kemet 495-2220-1-ND 495-2220-1-ND 495-2220-1-ND 495-2220-1-ND C19 100uF Capacitor Kemet 495-2220-1-ND 495-2220-1-ND 495-2220-1-ND 495-2220-1-ND C13 18pF Capacitor 52 470 Resistor Panasonic P470GTR-ND P470GTR-ND P470GTR-ND P470GTR-ND R25 1.5k Resistor Panasonic P1.5KGCT-ND R44 100k Resistor Rohm MCR03EZPJ104 MCR03EZPJ104 MCR03EZPJ104 MCR03EZPJ104 R40 100R, 0.1% metal film Resistor Panasonic P100DBCT-ND R26 10k Resistor Panasonic P10
www.datasheetarchive.com/download/36331940-595893ZC/ird.cd.contents.zip (IRD Platform 1v3 BOMrel1.pdf)
NXP 23/10/2012 35869.34 Kb ZIP ird.cd.contents.zip
NXP Q3 PMP4201Y PMP4201Y PMP4201Y PMP4201Y NPN transistors NXP Q4 PDTC124TT PDTC124TT PDTC124TT PDTC124TT transistor-npn NXP Q5 PDTC114TT PDTC114TT PDTC114TT PDTC114TT transistor-npn NXP Q6 PMGD280UN PMGD280UN PMGD280UN PMGD280UN N-channel MOSFET NXP Q7 MMBT3904 MMBT3904 MMBT3904 MMBT3904 transistor-npn NXP Q8 MMBT3904 MMBT3904 MMBT3904 MMBT3904 transistor-npn NXP RESET PTS -ND C11 100uF Capacitor Kemet 495-2220-1-ND 495-2220-1-ND 495-2220-1-ND 495-2220-1-ND C19 100uF Capacitor Kemet 495-2220-1-ND 495-2220-1-ND 495-2220-1-ND 495-2220-1-ND C13 18pF Capacitor 52 470 Resistor Panasonic P470GTR-ND P470GTR-ND P470GTR-ND P470GTR-ND R25 1.5k Resistor Panasonic P1.5KGCT-ND R44 100k Resistor Rohm MCR03EZPJ104 MCR03EZPJ104 MCR03EZPJ104 MCR03EZPJ104 R40 100R, 0.1% metal film Resistor Panasonic P100DBCT-ND R26 10k Resistor Panasonic P10
www.datasheetarchive.com/download/36331940-595893ZC/ird.cd.contents.zip (IRD 1v3 BOMrel1.pdf)
NXP 23/10/2012 35869.34 Kb ZIP ird.cd.contents.zip
Description NPN silicon planar epitaxial transistor intended for use in Class AB Efficiency (%) 67 cable equivalent (SL) (dB) 0.2 to 1.2 Total DC current consumption (mA) 240 VO 59 S2 10@fmax?20@fmin SLH 1.4 SLL 0.2 Slope cable equivalent (SL) (dB) 0.2 to 1.4 Total 18@fmax?20@fmin SLH 2.2 SLL 0.2 Slope cable equivalent (SL) (dB) 0.2 to 2.2 Total DC .0 SLL 0.2 Slope cable equivalent (SL) (dB) 0 to 1.5 Total DC current consumption (mA) 435
www.datasheetarchive.com/files/philips/catalog/parametrics/16-v2.html
Philips 07/06/2005 113.34 Kb HTML 16-v2.html
.5 BF547W BF547W BF547W BF547W @ f (MHz) 100 @ f1 100 Category Transistor wideband NPN up to 3 Transistor wideband NPN up to 6 GHz f T (GHz) 4 G UM (dB) 15 G UM @ f1 (dB) 15 G UM @ f2 (d BFG16A BFG16A BFG16A BFG16A @ f (MHz) 500 @ f1 500 Category Transistor wideband NPN up to 3 BFS17W BFS17W BFS17W BFS17W @ f (MHz) 500 @ f1 500 Category Transistor wideband NPN up to 3 MPSH10 MPSH10 MPSH10 MPSH10 Category Transistor wideband NPN up to 3.5 GHz f T (GHz) 0.65 I C
www.datasheetarchive.com/files/philips/catalog/parametrics/15.html
Philips 25/04/2003 325.82 Kb HTML 15.html
(A) 100.0 @ f2 800 f T (GHz) 5.5 Category Transistor wideband NPN up to 6 GHz cellular/cordless MIN. POWER GAIN(dB) 10.0 Frequency(MHz) 900 Category Transistor wideband NPN up to tot (MW) 1000 G UM @ f2(dB) 11 @ f2 800 @ I C (mA) 100 POLARITY NPN @ f1 500.0 f T / I (V) 18 G UM @ f1(dB) 15.0 VO ²(mV) 750 @ f(MHz) 500 Category Transistor wideband NPN up to 6 GHz BF547W BF547W BF547W BF547W POLARITY NPN Socket IF @ f1 100.0 f T (GHz) 1.2 f T / I C CURVE(SEE FIG.1) (2
www.datasheetarchive.com/files/philips/catalog/parametrics/15-v1.html
Philips 21/01/2002 257.07 Kb HTML 15-v1.html
. Name Function 1 OUT1 Output of high side driver (emitter of power NPN transistor). 2 V CC Positive (collector of the NPN power transistor). 4 CLAMP_PROG First Step of the Gate Voltage Programming. The TO 100kHz DESCRIPTION The L6353 L6353 L6353 L6353 device is a smart driver, with all the drive and protection know Collector-Emitter Voltage of High Side NPN 25 V V OUT2 - V SS Drain-Source Voltage of Low Side DMOS 25 < 10mA; T j = 25 5 C 4.8 5.2 mA R in 7, 10 Comparator Input Resistance 100 W V dth
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/4281.htm
STMicroelectronics 20/10/2000 18.73 Kb HTM 4281.htm
. Name Function 1 OUT1 Output of high side driver (emitter of power NPN transistor). 2 V CC Bias Voltage (collector of the NPN power transistor). 4 CLAMP_PROG First Step of the Gate Voltage OPERATING FREQUENCY UP TO 100kHz DESCRIPTION The L6353 L6353 L6353 L6353 device is a smart driver, with all the drive OUT1 Collector-Emitter Voltage of High Side NPN 25 V V OUT2 - V SS Drain-Source Voltage of Resistance 100 W V dth Comparator Threshold 3.15 V R ins 13 Input Resistance 75 K W I
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/4281-v3.htm
STMicroelectronics 25/05/2000 17.68 Kb HTM 4281-v3.htm
-06-19 1N5225B 1N5225B 1N5225B 1N5225B to 1N5267B 1N5267B 1N5267B 1N5267B Voltage regulator diodes 1996-04-26 2N1613 2N1613 2N1613 2N1613 NPN medium power transistor 1997-04-11 2N1711 2N1711 2N1711 2N1711 NPN medium power transistor 1997-05-28 2N1893 2N1893 2N1893 2N1893 NPN medium power transistor 1997-04-17 2N2219 2N2219 2N2219 2N2219; 2N2219A 2N2219A 2N2219A 2N2219A NPN switching transistors 1997-09-03 2N2222 2N2222 2N2222 2N2222; 2N2222A 2N2222A 2N2222A 2N2222A NPN switching transistors 1997-05-29 2N2369 2N2369 2N2369 2N2369 NPN switching transistor 1997-06-20 2N2484 2N2484 2N2484 2N2484 NPN general purpose transistor 1997-05-01 2N -06-02 2N2907 2N2907 2N2907 2N2907; 2N2907A 2N2907A 2N2907A 2N2907A PNP switching transistors 1997-05-30 2N3019 2N3019 2N3019 2N3019 NPN medium power transistor 1997
www.datasheetarchive.com/files/philips/discontinued/prunedlist-v2.html
Philips 16/06/2005 481.52 Kb HTML prunedlist-v2.html
transistor (11-4-97 ) 2N1711 2N1711 2N1711 2N1711: NPN medium power transistor (28-5-97 ) 2N1893 2N1893 2N1893 2N1893: NPN medium power transistor (17-4-97 ) 2N2219 2N2219 2N2219 2N2219; 2N2219A 2N2219A 2N2219A 2N2219A: NPN switching transistors (3-9-97 ) 2N2222 2N2222 2N2222 2N2222; 2N2222A 2N2222A 2N2222A 2N2222A: NPN switching transistors (29-5-97 ) 2N2369 2N2369 2N2369 2N2369: NPN switching transistor (20-6-97 ) 2N2484 2N2484 2N2484 2N2484: NPN general purpose transistor (1-5-97 ) 2N -5-97 ) 2N3019 2N3019 2N3019 2N3019: NPN medium power transistor (19-6-97 ) 2N3553 2N3553 2N3553 2N3553: Silicon planar epitaxial
www.datasheetarchive.com/files/philips/discontinued/prunedlist-v1.html
Philips 14/02/2002 372.71 Kb HTML prunedlist-v1.html
diodes (4/26/96 ) 2N1613 2N1613 2N1613 2N1613: NPN medium power transistor (11/4/97 ) 2N1711 2N1711 2N1711 2N1711: NPN medium power transistor (5/28/97 ) 2N1893 2N1893 2N1893 2N1893: NPN medium power transistor (4/17/97 ) 2N2219 2N2219 2N2219 2N2219; 2N2219A 2N2219A 2N2219A 2N2219A: NPN switching transistors (3/9/97 ) 2N2222 2N2222 2N2222 2N2222; 2N2222A 2N2222A 2N2222A 2N2222A: NPN switching transistors (5/29/97 ) 2N2369 2N2369 2N2369 2N2369: NPN switching transistor (6/20/97 ) 2N2484 2N2484 2N2484 2N2484: NPN general purpose transistor (1/5/97 ) 2N2905 2N2905 2N2905 2N2905; 2N2905A 2N2905A 2N2905A 2N2905A: PNP switching transistors
www.datasheetarchive.com/files/philips/discontinued/prunedlist.html
Philips 24/04/2003 367.75 Kb HTML prunedlist.html