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SKM150GB12T4 SEMIKRON IGBT MOD.150A 1200V 23 from $124.00 (Aug 2016) Allied Electronics Buy
SKM150GB12T4 SEMIKRON IGBT MODULE, DUAL N CH, 1.2KV, 232A 14 from $125.76 (Sep 2016) element14 Asia-Pacific Buy
SKM150GB12T4 SEMIKRON IGBT MODULE, DUAL N CH, 1.2KV, 232A 14 from £55.04 (Sep 2016) Farnell element14 Buy
SKM150GB12T4 SEMIKRON IGBT Array & Module Transistor, Dual N Channel, 232 A, 1.8 V, 1.2 kV, Module ;RoHS Compliant: Yes from $122.78 (Sep 2016) Newark element14 Buy
SKM150GB12T4 SEMIKRON POWER IGBT TRANSISTOR (Sep 2016) Richardson RFPD Buy
SKM150GB12T4 SEMIKRON Module: IGBT; 179A; SEMITRANS2; 1.2kV; Ifsm:450A; screwed 3 from $75.62 (Sep 2016) TME Electronic Components Buy
SKM150GB12T4G Semikron IGBT module Connection: 3 x M5 Fastening: 2 x M6 Configuration: Half-Bridge Housing type: SEMITRANS 3 Collector-emitter saturation voltage: 1.85 V Collector-emitter voltage: 1200 V Energy dissipation during make-time: 18.7 mJ Energy dissipation during tur 8 from €91.00 (Aug 2016) Distrelec Buy
SKM150GB12T4G SEMIKRON IGBT MODULE, DUAL N CH, 1.2KV, 223A 1 from $191.48 (Sep 2016) element14 Asia-Pacific Buy
SKM150GB12T4G SEMIKRON IGBT MODULE, DUAL N CH, 1.2KV, 223A 3 from £56.56 (Sep 2016) Farnell element14 Buy
SKM150GB12T4G SEMIKRON IGBT Array & Module Transistor, Dual N Channel, 223 A, 1.85 V, 1.2 kV, Module ;RoHS Compliant: Yes from $135.14 (Sep 2016) Newark element14 Buy
SKM150GB12T4G SEMIKRON Module: IGBT; 172A; SEMITRANS3; 1.2kV; Ifsm:450A; screwed; V: D56 4 from $95.34 (Sep 2016) TME Electronic Components Buy
SKM150GB12T4G-WITHOUT-SILICONE-GEL SEMIKRON POWER IGBT TRANSISTOR (Sep 2016) Richardson RFPD Buy

SKM150GB12T4* Datasheet

Part Manufacturer Description PDF Type Ordering
SKM150GB12T4 Semikron IGBT4 Modules
ri

5 pages,
440.02 Kb

Original Buy
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SKM150GB12T4G Semikron IGBT4 Modules
ri

5 pages,
478.61 Kb

Original Buy
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SKM150GB12T4*

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: SKM150GB12T4G Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC , 15 V VCES 1200 V Tj = 150 °C Tj Inverse diode IF SKM150GB12T4G Tj = 175 °C IFnom , Rev. 0 ­ 19.02.2009 1 SKM150GB12T4G Characteristics Symbol Conditions SEMITRANS®3 , Module SKM150GB12T4G LCE RCC'+EE' Features · IGBT4 = 4. Generation (Trench)IGBT · VCEsat with , Rev. 0 ­ 19.02.2009 © by SEMIKRON SKM150GB12T4G Fig. 1: Typ. output characteristic ... SEMIKRON
Original
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5 pages,
185.74 Kb

Diode semikron 103 SKM150GB12T4G TEXT
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Abstract: SKM150GB12T4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC , A ICnom ICRM SEMITRANS® 2 Fast IGBT4 Modules SKM150GB12T4 VGES tpsc Tj ICRM = , SKM150GB12T4 Characteristics Symbol Conditions Inverse diode VF = VEC IF = 150 A VGE = 0 V chiplevel VF0 chiplevel rF SEMITRANS® 2 Fast IGBT4 Modules SKM150GB12T4 IRRM Qrr Err Rth(j-c) â , €“ 03.09.2013 © by SEMIKRON SKM150GB12T4 Fig. 1: Typ. output characteristic, inclusive RCC'+ EE ... SEMIKRON
Original
datasheet

5 pages,
462.67 Kb

SKM150GB12T4 TEXT
datasheet frame
Abstract: SKM150GB12T4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC , 15 V VCES 1200 V Tj = 150 °C Tj Inverse diode IF SKM150GB12T4 Tj = 175 °C IFnom , Rev. 0 ­ 19.02.2009 1 SKM150GB12T4 Characteristics Symbol Conditions SEMITRANS®2 , m TC = 125 °C 1 m 120 A 0.31 K/W Module SKM150GB12T4 LCE RCC'+EE , 2 Rev. 0 ­ 19.02.2009 © by SEMIKRON SKM150GB12T4 Fig. 1: Typ. output characteristic ... SEMIKRON
Original
datasheet

5 pages,
263.3 Kb

SKM150 SKM150GB12T4 TEXT
datasheet frame
Abstract: SKM150GB12T4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC , SKM150GB12T4 Tj = 175 °C IFnom IFRM Features • IGBT4 = 4. Generation (Trench)IGBT • VCEsat , 0.19 K/W GB © by SEMIKRON Rev. 3 – 17.08.2012 1 SKM150GB12T4 Characteristics , SEMITRANS® 2 IRRM Qrr Fast IGBT4 Modules Err Rth(j-c) SKM150GB12T4 • IGBT4 = 4 , 150° GB 2 Rev. 3 – 17.08.2012 © by SEMIKRON SKM150GB12T4 Fig. 1: Typ. output ... SEMIKRON
Original
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5 pages,
458.87 Kb

SKM150GB12T4 TEXT
datasheet frame
Abstract: SKM150GB12T4G Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC , A ICnom ICRM SEMITRANS® 3 Fast IGBT4 Modules SKM150GB12T4G VGES tpsc Tj ICRM = , SKM150GB12T4G Characteristics Symbol Conditions Inverse diode VF = VEC IF = 150 A VGE = 0 V chiplevel VF0 chiplevel rF SEMITRANS® 3 Fast IGBT4 Modules SKM150GB12T4G IRRM Qrr Err Rth(j-c , €“ 03.09.2013 © by SEMIKRON SKM150GB12T4G Fig. 1: Typ. output characteristic, inclusive RCC'+ EE ... SEMIKRON
Original
datasheet

5 pages,
377.79 Kb

SKM150GB12T4G TEXT
datasheet frame
Abstract: SKM150GB128D device. If, for example, an SPT-IGBT SKM200GB128D SKM200GB128D were to be replaced by a SKM150GB12T4G, the nominal ... SEMIKRON
Original
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12 pages,
422.44 Kb

AN7005 semikron semikron IGBT SKM300GB12T4 AN-7005 353gb126 SKM300GB12E4 AN-9001 404GB12E4s 2360A 303GD12E4-c 101GD12E4s IGBT cross reference semikron SEMiX453GB12E4 SEMiX 202GB12E4s SKM200GB128D igbt cross-reference 300gb12e4 SEMIX 71GD12E4S 453gb12e4s TEXT
datasheet frame
Abstract: SKM150GB12T4 Absolute Maximum Ratings Symbol IGBT VCES IC ICnom ICRM ICRM = 3xICnom VCC = 800 V , SKM150GB12T4 Features · IGBT4 = 4. Generation (Trench)IGBT · VCEsat with positive temperaturecoefficient · , 19.2 410 72 15.8 0.19 K/W GB © by SEMIKRON Rev. 3 ­ 17.08.2012 1 SKM150GB12T4 , IGBT4 Modules SKM150GB12T4 Features · IGBT4 = 4. Generation (Trench)IGBT · VCEsat with positive , 17.08.2012 © by SEMIKRON SKM150GB12T4 Fig. 1: Typ. output characteristic, inclusive RCC'+ EE' Fig ... SEMIKRON
Original
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5 pages,
460.91 Kb

SKM150GB12T4 TEXT
datasheet frame
Abstract: SKM150GB12T4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC , 15 V VCES 1200 V Tj = 150 °C Tj Inverse diode IF SKM150GB12T4 Tj = 175 °C IFnom , . 2 ­ 16.06.2009 1 SKM150GB12T4 Characteristics Symbol Conditions SEMITRANS®2 IRRM , TC = 125 °C 1 m 120 A 0.31 K/W Module SKM150GB12T4 LCE RCC'+EE , 16.06.2009 © by SEMIKRON SKM150GB12T4 Fig. 1: Typ. output characteristic, inclusive RCC'+ EE ... SEMIKRON
Original
datasheet

5 pages,
241.09 Kb

Semitrans* IGBT SKM150GB12T4 TEXT
datasheet frame
Abstract: SKM150GB12T4G Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC , VCC = 800 V VGE ≤ 15 V VCES ≤ 1200 V Tj = 150 °C Tj Inverse diode IF SKM150GB12T4G , 1 SKM150GB12T4G Characteristics Symbol Conditions Inverse diode VF = VEC IF = 150 A VGE , SKM150GB12T4G LCE RCC'+EE' Features • IGBT4 = 4. Generation (Trench)IGBT • VCEsat with positive , ° GB 2 Rev. 0 – 19.02.2009 © by SEMIKRON SKM150GB12T4G Fig. 1: Typ. output ... SEMIKRON
Original
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5 pages,
185.65 Kb

SKM150GB12T4G TEXT
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