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Part : SKM150GB12T4 Supplier : SEMIKRON Manufacturer : RS Components Stock : 97 Best Price : £61.73 Price Each : £70.75
Part : SKM150GB12T4 Supplier : SEMIKRON Manufacturer : Richardson RFPD Stock : - Best Price : - Price Each : -
Part : SKM150GB12T4G-WITHOUT-SILICONE-GEL Supplier : SEMIKRON Manufacturer : Richardson RFPD Stock : - Best Price : - Price Each : -
Part : SKM150GB12T4GW Supplier : SEMIKRON Manufacturer : Richardson RFPD Stock : - Best Price : - Price Each : -
Part : SKM150GB12T4 Supplier : SEMIKRON Manufacturer : TME Electronic Components Stock : 12 Best Price : $78.63 Price Each : $97.27
Part : SKM150GB12T4G Supplier : SEMIKRON Manufacturer : TME Electronic Components Stock : 2 Best Price : $99.14 Price Each : $122.32
Part : SKM150GB12T4 Supplier : SEMIKRON Manufacturer : element14 Asia-Pacific Stock : - Best Price : $133.92 Price Each : $133.92
Part : SKM150GB12T4G Supplier : SEMIKRON Manufacturer : element14 Asia-Pacific Stock : 6 Best Price : $157.61 Price Each : $165.9120
Part : SKM150GB12T4G Supplier : SEMIKRON Manufacturer : Farnell element14 Stock : 6 Best Price : £109.55 Price Each : £140.7900
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SKM150GB12T4 Datasheet

Part Manufacturer Description PDF Type
SKM150GB12T4 Semikron IGBT4 Modules Original
SKM150GB12T4G Semikron IGBT4 Modules Original

SKM150GB12T4

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: SKM150GB12T4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC , SKM150GB12T4 Tj = 175 °C IFnom IFRM Features â'¢ IGBT4 = 4. Generation (Trench)IGBT â'¢ VCEsat , 0.19 K/W GB © by SEMIKRON Rev. 3 â'" 17.08.2012 1 SKM150GB12T4 Characteristics , SEMITRANS® 2 IRRM Qrr Fast IGBT4 Modules Err Rth(j-c) SKM150GB12T4 â'¢ IGBT4 = 4 , 150° GB 2 Rev. 3 â'" 17.08.2012 © by SEMIKRON SKM150GB12T4 Fig. 1: Typ. output SEMIKRON
Original
E63532
Abstract: SKM150GB12T4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC , A ICnom ICRM SEMITRANS® 2 Fast IGBT4 Modules SKM150GB12T4 VGES tpsc Tj ICRM = , SKM150GB12T4 Characteristics Symbol Conditions Inverse diode VF = VEC IF = 150 A VGE = 0 V chiplevel VF0 chiplevel rF SEMITRANS® 2 Fast IGBT4 Modules SKM150GB12T4 IRRM Qrr Err Rth(j-c) â , '" 03.09.2013 © by SEMIKRON SKM150GB12T4 Fig. 1: Typ. output characteristic, inclusive RCC'+ EE SEMIKRON
Original

SKM150GB12T4

Abstract: Semitrans* IGBT SKM150GB12T4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC , 15 V VCES 1200 V Tj = 150 °C Tj Inverse diode IF SKM150GB12T4 Tj = 175 °C IFnom , . 2 ­ 16.06.2009 1 SKM150GB12T4 Characteristics Symbol Conditions SEMITRANS®2 IRRM , TC = 125 °C 1 m 120 A 0.31 K/W Module SKM150GB12T4 LCE RCC'+EE , 16.06.2009 © by SEMIKRON SKM150GB12T4 Fig. 1: Typ. output characteristic, inclusive RCC'+ EE
SEMIKRON
Original
Semitrans* IGBT
Abstract: SKM150GB12T4 Absolute Maximum Ratings Symbol IGBT VCES IC ICnom ICRM ICRM = 3xICnom VCC = 800 V , SKM150GB12T4 Features · IGBT4 = 4. Generation (Trench)IGBT · VCEsat with positive temperaturecoefficient · , 19.2 410 72 15.8 0.19 K/W GB © by SEMIKRON Rev. 3 ­ 17.08.2012 1 SKM150GB12T4 , IGBT4 Modules SKM150GB12T4 Features · IGBT4 = 4. Generation (Trench)IGBT · VCEsat with positive , 17.08.2012 © by SEMIKRON SKM150GB12T4 Fig. 1: Typ. output characteristic, inclusive RCC'+ EE' Fig SEMIKRON
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SKM150GB12T4

Abstract: 13mJ SKM150GB12T4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC , 15 V VCES 1200 V Tj = 150 °C Tj Inverse diode IF SKM150GB12T4 Tj = 175 °C IFnom , Rev. 0 ­ 19.02.2009 1 SKM150GB12T4 Characteristics Symbol Conditions SEMITRANS®2 , m TC = 125 °C 1 m 120 A 0.31 K/W Module SKM150GB12T4 LCE RCC'+EE , 2 Rev. 0 ­ 19.02.2009 © by SEMIKRON SKM150GB12T4 Fig. 1: Typ. output characteristic
SEMIKRON
Original
13mJ SKM150

SKM150GB12T4G

Abstract: Diode semikron 103 SKM150GB12T4G Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC , 15 V VCES 1200 V Tj = 150 °C Tj Inverse diode IF SKM150GB12T4G Tj = 175 °C IFnom , Rev. 0 ­ 19.02.2009 1 SKM150GB12T4G Characteristics Symbol Conditions SEMITRANS®3 , Module SKM150GB12T4G LCE RCC'+EE' Features · IGBT4 = 4. Generation (Trench)IGBT · VCEsat with , Rev. 0 ­ 19.02.2009 © by SEMIKRON SKM150GB12T4G Fig. 1: Typ. output characteristic
SEMIKRON
Original
Diode semikron 103
Abstract: SKM150GB12T4G Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC , A ICnom ICRM SEMITRANS® 3 Fast IGBT4 Modules SKM150GB12T4G VGES tpsc Tj ICRM = , SKM150GB12T4G Characteristics Symbol Conditions Inverse diode VF = VEC IF = 150 A VGE = 0 V chiplevel VF0 chiplevel rF SEMITRANS® 3 Fast IGBT4 Modules SKM150GB12T4G IRRM Qrr Err Rth(j-c , '" 03.09.2013 © by SEMIKRON SKM150GB12T4G Fig. 1: Typ. output characteristic, inclusive RCC'+ EE SEMIKRON
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453gb12e4s

Abstract: SEMIX 71GD12E4S device. If, for example, an SPT-IGBT SKM200GB128D were to be replaced by a SKM150GB12T4G, the nominal
SEMIKRON
Original
AN-9001 453gb12e4s SEMIX 71GD12E4S 300gb12e4 igbt cross-reference SEMiX 202GB12E4s SEMiX453GB12E4
Abstract: SKM150GB12T4G Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC , VCC = 800 V VGE ≤ 15 V VCES ≤ 1200 V Tj = 150 °C Tj Inverse diode IF SKM150GB12T4G , 1 SKM150GB12T4G Characteristics Symbol Conditions Inverse diode VF = VEC IF = 150 A VGE , SKM150GB12T4G LCE RCC'+EE' Features â'¢ IGBT4 = 4. Generation (Trench)IGBT â'¢ VCEsat with positive , ° GB 2 Rev. 0 â'" 19.02.2009 © by SEMIKRON SKM150GB12T4G Fig. 1: Typ. output SEMIKRON
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Abstract: SKM150GB12T4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC , SKM150GB12T4 Tj = 175 °C IFnom IFRM Features â'¢ IGBT4 = 4. Generation (Trench)IGBT â'¢ VCEsat , 0.19 K/W GB © by SEMIKRON Rev. 3 â'" 17.08.2012 1 SKM150GB12T4 Characteristics , SEMITRANS® 2 IRRM Qrr Fast IGBT4 Modules Err Rth(j-c) SKM150GB12T4 â'¢ IGBT4 = 4 , 150° GB 2 Rev. 3 â'" 17.08.2012 © by SEMIKRON SKM150GB12T4 Fig. 1: Typ. output SEMIKRON
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150GB12T4

150GB12T4

Abstract: SKM150GB12T4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC , 15 V VCES 1200 V Tj = 150 °C Tj Inverse diode IF SKM150GB12T4 Tj = 175 °C IFnom , . 2 ­ 16.06.2009 1 SKM150GB12T4 Characteristics Symbol Conditions SEMITRANS®2 IRRM , TC = 125 °C 1 m 120 A 0.31 K/W Module SKM150GB12T4 LCE RCC'+EE , 16.06.2009 © by SEMIKRON SKM150GB12T4 Fig. 1: Typ. output characteristic, inclusive RCC'+ EE
SEMIKRON
Original

150GAR12T4

Abstract: 150GB12T4 SKM150GB12T4 Absolute Maximum Ratings Symbol IGBT VCES IC ICnom ICRM ICRM = 3xICnom VCC = 800 V , SKM150GB12T4 Features · IGBT4 = 4. Generation (Trench)IGBT · VCEsat with positive temperaturecoefficient · , 19.2 410 72 15.8 0.19 K/W GB © by SEMIKRON Rev. 3 ­ 17.08.2012 1 SKM150GB12T4 , IGBT4 Modules SKM150GB12T4 Features · IGBT4 = 4. Generation (Trench)IGBT · VCEsat with positive , 17.08.2012 © by SEMIKRON SKM150GB12T4 Fig. 1: Typ. output characteristic, inclusive RCC'+ EE' Fig
SEMIKRON
Original
150GAR12T4 150GAL12T4
Abstract: SKM150GB12T4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC , A ICnom ICRM SEMITRANS® 2 Fast IGBT4 Modules SKM150GB12T4 VGES tpsc Tj ICRM = , SKM150GB12T4 Characteristics Symbol Conditions Inverse diode VF = VEC IF = 150 A VGE = 0 V chiplevel VF0 chiplevel rF SEMITRANS® 2 Fast IGBT4 Modules SKM150GB12T4 IRRM Qrr Err Rth(j-c) â , '" 03.09.2013 © by SEMIKRON SKM150GB12T4 Fig. 1: Typ. output characteristic, inclusive RCC'+ EE SEMIKRON
Original
Abstract: SKM150GB12T4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC , 15 V VCES 1200 V Tj = 150 °C Tj Inverse diode IF SKM150GB12T4 Tj = 175 °C IFnom , Rev. 0 ­ 19.02.2009 1 SKM150GB12T4 Characteristics Symbol Conditions SEMITRANS®2 , m TC = 125 °C 1 m 120 A 0.31 K/W Module SKM150GB12T4 LCE RCC'+EE , 2 Rev. 0 ­ 19.02.2009 © by SEMIKRON SKM150GB12T4 Fig. 1: Typ. output characteristic SEMIKRON
Original