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Part Manufacturer Description Datasheet BUY
TM124BBK32-60L Texas Instruments 1MX32 FAST PAGE DRAM MODULE, 60ns, SMA72, SIMM-72 visit Texas Instruments
TM124BBK32I-50 Texas Instruments 1MX32 FAST PAGE DRAM MODULE, 50ns, SMA72, SIMM-72 visit Texas Instruments
TM124FBK32H-70 Texas Instruments 1MX32 EDO DRAM MODULE, 70ns, SMA72, SIMM-72 visit Texas Instruments
TM248CBK32F-70L Texas Instruments 2MX32 FAST PAGE DRAM MODULE, 70ns, SMA72, SIMM-72 visit Texas Instruments
TM248CBK32S-80L Texas Instruments 2MX32 FAST PAGE DRAM MODULE, 80ns, SMA72, SIMM-72 visit Texas Instruments
TM248GBK32H-50 Texas Instruments 2MX32 EDO DRAM MODULE, 50ns, SMA72, SIMM-72 visit Texas Instruments

SIMM 1Mx9

Catalog Datasheet MFG & Type PDF Document Tags

1Mx9 DRAM 30-pin SIMM

Abstract: msc diode DRAM - MODULE 1.02.01.02 Fast Page Mode 1 Mega Byte MSC 991100J3NS 1Mx9 DRAM SIMM , 1Mx9 DRAM SIMM, 1K Byte Refresh, 5.0V FUNCTIONAL BLOCK DIAGRAM RAS RAS DQ0 DQ0 CAS , 1 Mega Byte 1Mx9 DRAM SIMM, 1K Byte Refresh, 5.0V Absolute Maximum Ratings* Item Voltage on , Fast Page Mode MSC 991100J3NS 1 Mega Byte 1Mx9 DRAM SIMM, 1K Byte Refresh, 5.0V Capacitance , 1.02.01.02 Fast Page Mode MSC 991100J3NS 1 Mega Byte 1Mx9 DRAM SIMM, 1K Byte Refresh, 5.0V AC
MSC Vertriebs
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1Mx9 DRAM 30-pin SIMM msc diode 30-pin simm memory dynamic pin diagram of ic TAA 762 1Mx4 30 pin SIP dram memory 991100J3NS-6 991100J3NS-7 067MAX 70MAX 010MAX 25MAX

1Mx9 DRAM 30-pin SIMM

Abstract: j353 Mega Byte Fast Page Mode MSC 991100J3NS 1Mx9 DRAM SIMM, IK Byte Refresh, 5.0V GENERAL DESCRIPTION , 991100J3NS 1Mx9 DRAM SIMM, IK Byte Refresh, 5.0V FUNCTIONAL BLOCK DIAGRAM ras o- CAS O r1 ras dqo -o dqo , Mode MSC 991100J3NS 1Mx9 DRAM SIMM, IK Byte Refresh, 5.0V Capacitance (Ta=25°C, f=lMHz) Item Symbol , 1.02.01.02 S â'¢ COMPONENTS VERTRIEBS ! éÉML 1 Mega Byte Fast Page Mode MSC 991100J3NS 1Mx9 DRAM SIMM , 991100J3NS 1Mx9 DRAM SIMM, IK Byte Refresh, 5.0V Timing Diagram READ CYCLE WRITE CYCLE (EARLY WRITE
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j353 msc module dram module odq1 MSC R631T-1 MSC CAPACITOR DQ0-D07

1mx8

Abstract: DPS 119 , S IM M . 35 1Mx9/512 Kx18/256Kx3 6, 20 -45ns, Z I P , , ZIP/SIM M . 73 1Mx9/512Kx18/256Kx36, 2 0 - 4 5 n s ,Z IP .79 2Mx8/1Mx16/512Kx32, 1 7 - 25ns, ZIP/DPD16MS32PW5 DPD32MS32PW5 16Mx32, 60 - 100ns, SIMM. 117 32Mx32, 6 0 -100ns, SIMM. 119
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1mx8 DPS 119 256KX8 SIMM 512kx8 dram simm dram zip 256kx16 DPS256S32W DPS256S36LK DPS256S8AP DPS256S8EJ4/EL4/RJ4/RL4 DPS256S8P/DPS256S8PL/DPS256S8PLL DPS256X24P

SIMM 1Mx9

Abstract: October 26, 1999 Modular Technologies 4MByte (1M x 36) DRAM Module - 1Mx4 based 72-pin SIMM Part , Diagram CAS1# CAS0# RAS0# 1Mx9 Block DQ0~DQ8 1Mx9 Block DQ9~DQ17 1Mx9 Block DQ18~DQ26 1Mx9 , all DRAMs. OE# of all DRAMs is grounded. Each 1Mx9 Block comprises of two 1Mx4 DRAMs and one 1Mx1 DRAM , 8 SMART Physical Dimensions 72-pin SIMM Module ® SM5360140U1P3UU October 26, 1999 , 2 3 4 5 6 7 8 9 10 11 12 1 2 3 4 5 6 7 SMART Modular Technologies Product Category 5 : DRAM SIMM
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SIMM 1Mx9 SM532014001P3UU SM532014011P3UU AMP-7-382486-2 AMP-822019-4 AMP-822110-3 SM536013001PUUU

KMM594000C

Abstract: 1Mx9 DRAM 30-pin SIMM SIMM Based on 4M DRAM 1Mx8 1Mx9 4Mx8 4Mx9 1Mx32 1Mx33 1Mx36 1Mx36 1Mx36 1Mx40 2Mx32 2Mx36 2Mx36 2Mx36 , S, 30 Pin SIMM S, 30 Pin SIMM S, 72 Pin SIMM S, 72 Pin SIMM S, 72 Pin SIMM D, 72 Pin SIMM S, 72 Pin SIMM S, 72 Pin SIMM S, 72 Pin SIMM S, 72 Pin SIMM D, 72 Pin SIMM D, 72 Pin SIMM D, 72 Pin SIMM D, 72 Pin SIMM D, 72 Pin SIMM D, 72 Pin SIMM D, 72 Pin SIMM D, 72 Pin SIMM 650 650 805 805 855 1000 1000 , NOW NOW NOW NOW NOW NOW NOW NOW NOW NOW NOW NOW NOW NOW NOW NOW DRAM SIMM Based on 4M B/W DRAM
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KMM594000C 30 pin simm 4MX39 4m dram 72-pin simm 32 8mx32 simm 72 pin 1mx33 2MX40 4MX33 KMM581000CN KMM591000CN KMM584000C

SIMM 1Mx9 30pin

Abstract: simm EDO 72pin /didouble (mil) Refresh (cycle/ms) CIS DRAM SIMM Based on 4M DRAM 1Mx8 1Mx9 1Mx32 1Mx33 1Mx36 KMM581000CN , /70/80 50/60/70/80 S, 30pm SIMM S, SOpin SIMM S, 30pin SIMM S, 30pin SIMM S, 72pin SIMM D, 72pin SIMM S, 72pinSIMM S, 72pin SIMM S, 72pin SIMM S, 72pin SIMM S, 72pin SIMM D, 72pin SIMM D, 72pm SIMM D, 72pin SIMM D, 72pin SIMM D, 72pin SIMM D, S, S, D, 72pin 30pin 30pin 72pm SIMM SIMM SIMM SIMM 650 650 , 4Mx33 4Mx36 D, 72pin SIMM D, 72pm SIMM DRAM SIMM Based on 4M B/W DRAM 256KX32 256Kx36 512Kx32
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KMM51442100ATG SIMM 1Mx9 30pin simm EDO 72pin KMM532 KMM5B1020CN KMM591020CN KMM5321000CV/CVG KMM5331000C/CG KMM5361000C2/C2G KMM5361000CH

LG 2MX32 EDO simm module

Abstract: GMM732411OCNS MEMORY LINE-UP 1. DRAM SIMM MODULE 50ns I I MB I 4MB lMx8 1Mx9 60ns \GMM781000CNS-6 H , : * ; Comming Soon, f ; Under Development 11 MEMORY LINE-UP DRAM SIMM MODULE (Continued) 16MB 3nrl , Supply Speed (ns) Feature FP (512/8ms) · IM Byte DRAM Module (30 pin SIMM) Composition Org. Part , FP (512/8ms) 1Mx9 5V±10% 60/70 FP{1K/16ms) NOW Parity · 4M Byte DRAM Module (30 pin SIMM) Composition Part Number Org. 4Mx8 GMM784000BS GMM784000CS GMM784000DS GMM794000BS
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LG 2MX32 EDO simm module GMM732411OCNS GMM732201 GMM791000CNS-6 GMM784000CS-6 GMM794000CS-6 1GMM781OOOCNS-7 1GMM791000CNS-7 1GMM784000CS-7

OMM781000CNS

Abstract: GMM732411OCNS MEMORY LINE-UP 1. DRAM SIMM MODULE 50ns ÎMB j !Mx8 1Mx9 4MB 4Mx8 4Mx9 60ns OMM781000CNS , LINE-UP DRAM SIMM MODULE (Continued) 50ns 16MB Í4Mx32 60ns 70ns GMM7324100CNS/SG-7 GMM7324200CNS/SG , IM Byte DRAM M odale (30 pin SIMM) Org. P art Number GM M 781000BS GM M 781000BNS 1Mx8 GM M 781100BNS G M M 7 81000CNS G M M 7 81000DNS GM M 781000ENS GM M 791000BS GM M 7910OOBNS 1Mx9 GM M 791100BNS , ) 5V±10% 60/70 F P (1 K/16ms) NOW Parity · 4M Byte DRAM Module (30 pin SIMM) W Org
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GMM7362000 GMM732411 OMM781000CNS-6 GMM781OOOCNS-7 GMM79I GMM784000CS-7 GMM794000CS-7 1MX32
Abstract: 1Mx9/512Kx18/256Kx36, 20 - 45ns, ZIP 30A104-10 A 9 Megabit CMOS SRAM DPS256S36LK PRELIMINARY DESCRIPTION: The DPS256S36LK is a 256K X 36 high-density, low-power static RAM module comprised of eight 128Kx8 and four 256Kx4 monolithic SRAMâ'™s, an advanced high-speed CMOS decoder, resistor network and decoupling capacitors surface mounted on a FR-4 ZIP substrate. FEATURES: â'¢ Configuration: 1M x 9 , -4 SIMM Module PIN-OUT DIAGRAM FUNCTIONAL BLOCK DIAGRAM 30A104-10 REV. A This document Dense-Pac Microsystems
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9/512K 18/256K I/O35
Abstract: SMART Features · · · · · · · · · · · ® SM5331000 February 12, 1997 Modular Technologies 4MByte (1M x 33) DRAM Module - 1Mx4 based 72-pin SIMM Standard : JEDEC Configuration : Parity Access , # 1Mx8 Block DQ0~DQ7 1Mx8 Block DQ8~DQ15 1Mx8 Block DQ16~DQ23 1Mx9 Block DQ24~DQ32 CAS2# CAS3 , grounded. Each 1Mx8 Block comprises of two 1Mx4 DRAMs and the 1Mx9 Block comprises of two 1Mx4 DRAMs and , Physical Dimensions 72-pin SIMM Module ® SM5331000 February 12, 1997 Modular Technologies Smart Modular Technologies
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Abstract: DIAGRAM TOP VIEW INDEX 1 / 0 3 10 VDD 12 A 7 14 ] ] ] ] ] ] Configuration: 1Mx9, 512Kx 18 , Retention All inputs and Outputs are TTL-Compatible 64 Pin FR-4 SIMM Module PIN NAMES A0 - A1 7 1/00-1/035 -
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DPS256S36L

1Mx9 DRAM 30-pin SIMM

Abstract: KMM591000CN DRAM MODULE KMM591OOOCN Fast Page Mode 1Mx9 DRAM SIMM , 1K Refresh , 5V 1 Mega Byte GENERAL DESCRIPTION The Samsung KMM591 OOOCN is a 1M bit x 9 Dynamic RAM high density memory module. The Samsung KMM591 OOOCN consists of two CMOS 1Mx4 bit DRAMs in 20-pin SOJ packages and 1Mx1 bit DRAM in 20-pin SOJ package mounted on a 30-pin glass-epoxy substrate. A 0.22uF decoupling capacitor is mounted on the printed circuit board for each DRAM. The KMM591000CN is a Single In-line Memory Module with edge connections and
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44C1000CJ KMM591000 dram simm memory module samsung 30-pin KM41C1000CJ

MCM91430

Abstract: Motorola CMOS Dynamic RAM 1M ) Production Packaging Standard FSRAM Modules 1M x 32 20/25 ns Now 72 Pin SIMM (SG) Uses eight 4M SRAMs MCM321024 512K x 32 20/25 ns Now 72 Pin SIMM (SG) Uses four 4M SRAMs MCM32515 128K x 32 20/25 ns Now 64 Pin SIMM (SG) Uses four 1M SRAMs MCM32128A Motorola , Now 3­chip (TSOP) 60/70 340/290 3Q96 3­chip (TSOP) 1Mx9 1MB MCM91430 30 , /Gold Pad DIMM (Board Rev.) ASHG = Low Profile Gold Pad SIMM AS = SIMM (Board Revision) D/DG = Dual
Motorola
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Motorola CMOS Dynamic RAM 1M Motorola CMOS Dynamic RAM 1M x 1 MCM511000A 1mx1 DRAM DIP TSOP 400 86 mcm511000 MCM517405C MCM518160A MCM518160B MCM518165B MCM518165BV MCM44400C
Abstract: SAJ1SUNG ELECTRONICS INC b7E ]> â  V^bNlMS DOISOTI bTb â  S flG K KMM591020BN DRAM MODULES 1Mx9 DRAM SIMM Memory Module, Low Power FEATURES GENERAL DESCRIPTION â'¢ Performance range: The Samsung KMM591020BN. is a 1M b itsx9 Dynamic RAM high density memory module. The Samsung KMM591020BN consist of two 4M bit DRAMs (KM44C1000BLJ-1Mx4) in 20-pin SOJ packages and 1M bit DRAM (KM41C1000CLJ1Mx1) in 20-pin SOJ package mounted on a 30-pin glassepoxy substrate A 0.22/xF decoupling capacitor is -
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KM44C1000BLJ-1M KM41C1000CLJ1M KMM591020BN-6 KMM591020BN-7 KMM591020BN-8

D10CK

Abstract: SM5362000 M - ¿* m ,í SM5362000H-7 8MByte (2M x 36) CMOS DRAM Module General Description The SM 5362000H-7 is a high performance, 8-megabyte dynamic RAM module organized as 2M words by 36 bits, in a 72-pin, leadless, single-in-line memory module (SIMM) package. The m odule utilizes sixteen CMOS 1M x 4 and eight 1M xl dynamic RAM s in surface mount package on an epoxy laminate substrate. Each device is , active low signal. Each 1Mx9 Block comprises of two 1Mx4 and one lMxl devices. DQ8, DQ17, DQ26 and DQ35
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D10CK SM5362000 DQ0-DQ35

KMCJ532512

Abstract: KM28C64B /ms C/S I D RAM S IM M B ased on 4 M D RAM 1Mx8 1Mx9 4Mx8 4Mx9 1Mx32 1Mx33 1Mx36 1Mx36 1Mx36 , /60/70/80 50/60/70/80 50/60/70/80 I I S, 30 Pin SIMM S, 30 Pin SIMM S, 72 Pin SIMM S, 72 Pin SIMM S, 72 Pin SIMM D, 72 Pin SIMM S, 72 Pin SIMM S, 72 Pin SIMM S, 72 Pin SIMM S, 72 Pin SIMM D, 72 Pin SIMM D, 72 Pin SIMM D, 72 Pin SIMM D, 72 Pin SIMM D, 72 Pin SIMM D, 72 Pin SIMM D, 72 Pin SIMM D, 72 Pin SIMM 650 ~ ~ j 1024/16 650 805 805 855 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1290
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KM41C4000C-6 KMCJ532512 KM28C64B KM23C1000-20 30-pin simm memory "8m x 8" 30-pin simm memory "16m x 8" KM48V2104AL KM41C1000C-6 KM41C1000CL-6 KM41C1000CSL-6 KM44C256C-6 KM44C256CL-6 KM44C256CSL-6

KMM591000BN-6

Abstract: KMM591000BN6 KMM591000BN 1MX9 DRAM SIMM Memory Module FEATURES · Performance range: tu e KMM591000BN-6 KMM591000BN-7 KMM591000BN-8 60ns 70ns 80ns tcAc 15ns 20 ns 20 ns DRAM MODULES GENERAL DESCRIPTION I rc 110ns 130ns 150ns The Samsung KMM591000BN is a 1M b it x 9 Dynamic RAM high density memory module. The Samsung KMM591000BN co n sist o f tw o 4M b it DRAMs (KM44C1000BJ 1 M x4 ) in 20-pin SOJ package and 1M bit DRAM (KM41C1000CJ 1M x 1) in 20-pin SOJ pack age mounted on a 30-pin glass-epoxy substrate
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KMM591000BN6 KMM591000BN8 kmm591000bn7 KMM591000B M591000BN
Abstract: Modular Technologies SMART SM5361000 July 1995 Rev 3 SM5361000 4MByte (1M x 36) CMOS DRAM Module - Low Profile General Description The SM5361000 is a high performance, 4-megabyte dynamic RAM module organized as 1M words by 36 bits, in a 72-pin, leadless single-in-line memory module (SIMM , DQ18~26 DQ27~35 1M x 9 Block 1M x 9 Block 1M x 9 Block DQ0~DQ35 Note: 1. 2. 3. 4. 5. Each 1Mx9 , tACP. 12. tRASC defines RAS# pulse width in fast page mode cycles. Physical Dimensions 72-pin SIMM Smart Modular Technologies
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MCM91000

Abstract: motorola mcm91000s MOTOROLA TECHNICAL DATA SEMICONDUCTOR 1Mx9 Bit Dynamic Random Access Memory Module The MCM 91000 and MCM9L1000 are 9M dynam ic random access memory (DRAM) modules organized as 1,048,576 x 9 bits. The modules are 30-lead single-in-line memory m odules (SIMM) or 30-pin single-in-line packages (SIP) consisting of nine M CM511000A D RAM s housed in a 20/26 J-lead small outline package (SOJ) and mounted on a , SIP, S « 4-Layer SIMM, AS = 2-Layer SIMM, SG = Gold Pad SIMM) Full Part Numbers- MCM91000AS70
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MCM91000 motorola mcm91000s MCM91000-70 MCM91000-80 MCM91000-10 9L1000 MCM91000AS00

MCM91430

Abstract: 1Mx9 DRAM 30-pin SIMM MOTOROLA TECHNICAL DATA SEMICONDUCTOR Advance Information 1Mx9 Bit Dynamic Random A ccess Memory Module The MCM91430 and MCM9L1430 are 9M dynamic random access memory (DRAM) modules organized as 1,048,576 x 9 bits. The modules are 30-lead single-in-line memory modules (SIMM) consisting of two MCM54400AN and one MCM511000A DRAMs housed in a 20/26 J-lead small outline package (SOJ) and mounted on a , Number 91430,9L1430 X XX T L Speed (70 * ns, 80 « 80 ns, 10 « 100 ns) Package (S * SIMM
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MCM91430S 91430 MCM91430-70 MCM91430-80 MCM91430-10 MCM91430S80 MCM91430S10
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