NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Part | Manufacturer | Description | Type | Ordering |
| SIGC156T120R2C | Infineon Technologies | SIGC156T120R2C, 1200V, 100A |
4 pages, |
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| SIGC156T120R2C | Infineon Technologies | IGBT Chip in NPT-Technology |
4 pages, |
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| SIGC156T120R2CL | Infineon Technologies | SIGC156T120R2CL, 1200V, 100A |
4 pages, |
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| SIGC156T120R2CL | Infineon Technologies | IGBT Chip in NPT-Technology |
4 pages, |
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| SIGC156T120R2CQ | Infineon Technologies | IGBT Chip in Fieldstop-technology |
4 pages, |
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| SIGC156T120R2CS | Infineon Technologies | SIGC156T120R2CS, 1200V, 100A |
4 pages, |
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| SIGC156T120R2CS | Infineon Technologies | IGBT Chip in NPT-Technology |
4 pages, |
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| Catalog Datasheet Results | Type | Document Tags |
| Abstract: Preliminary SIGC156T120R2C IGBT Chip in NPT-technology FEATURES: · 1200V NPT technology 200um , paralleling · integrated gate resistor Chip Type VCE ICn SIGC156T120R2C 1200V 100A This chip , , L 7181-M 7181-M, Edition 1, 24.01.02 Preliminary SIGC156T120R2C MAXIMUM RATINGS: Parameter , SIGC156T120R2C CHIP DRAWING: Edited by INFINEON Technologies AI PS DD HV3, L 7181-M 7181-M, Edition 1, 24.01.02 Preliminary SIGC156T120R2C FURTHER ELECTRICAL CHARACTERISTICS: This chip data sheet refers to the ... | Original |
4 pages, |
SIGC156T120R2C 7181-M BSM100GD120DN2 a4661 SIGC156T120R2C abstract |
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| Abstract: SIGC156T120R2C IGBT Chip in NPT-technology FEATURES: · 1200V NPT technology 200um chip · low , gate resistor Chip Type VCE ICn SIGC156T120R2C 1200V 100A This chip is used for: · , 7181-M 7181-M, Edition 2, 03.09.2003 SIGC156T120R2C MAXIMUM RATINGS: Parameter Symbol Value Unit , Unit ns SIGC156T120R2C CHIP DRAWING: Edited by INFINEON Technologies AI PS DD HV3, L 7181-M 7181-M, Edition 2, 03.09.2003 SIGC156T120R2C FURTHER ELECTRICAL CHARACTERISTICS: This chip data sheet ... | Original |
4 pages, |
SIGC156T120R2C igbt "sawn on foil" BSM100GD120DN2 soft solder die bonding a4661 SIGC156T120R2C abstract |
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| Abstract: SIGC156T120R2C IGBT Chip in NPT-technology FEATURES: · 1200V NPT technology 200um chip · low , gate resistor Chip Type VCE ICn SIGC156T120R2C 1200V 100A This chip is used for: · , 7181-M 7181-M, Edition 2, 03.09.2003 SIGC156T120R2C MAXIMUM RATINGS: Parameter Symbol Value Unit , Unit ns SIGC156T120R2C CHIP DRAWING: Edited by INFINEON Technologies AI PS DD HV3, L 7181-M 7181-M, Edition 2, 03.09.2003 SIGC156T120R2C FURTHER ELECTRICAL CHARACTERISTICS: This chip data sheet ... | Original |
4 pages, |
SIGC156T120R2C BSM100GD120DN2 a4661 SIGC156T120R2C abstract |
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| Abstract: Preliminary SIGC156T120R2C IGBT Chip in NPT-technology FEATURES: · 1200V NPT technology 200um , paralleling · integrated gate resistor Chip Type VCE ICn SIGC156T120R2C 1200V 100A This chip , , 18.01.01 12:57 Preliminary SIGC156T120R2C MAXIMUM RATINGS: Parameter Symbol Value Unit , SIGC156T120R2C CHIP DRAWING: Edited by INFINEON technologies AI IP DD HV2, L 7181-M 7181-M, Edition 1, 18.01.01 12:57 Preliminary SIGC156T120R2C FURTHER ELECTRICAL CHARACTERISTICS: This chip data sheet ... | Original |
4 pages, |
SIGC156T120R2C BSM100GD120DN2 a4661 SIGC156T120R2C abstract |
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| Abstract: SIGC156T120R2CL IGBT Chip in NPT-technology FEATURES: · 1200V NPT technology · 180um chip · , : · drives ICn SIGC156T120R2CL 1200V 100A G Die Size Package 12.59 X 12.59 mm2 , , Edition 2, 03.09.2003 SIGC156T120R2CL MAXIMUM RATINGS: Parameter Symbol Value Unit 1200 , Unit ns SIGC156T120R2CL CHIP DRAWING: Edited by INFINEON Technologies AI PS DD HV3, L 7181-P 7181-P, Edition 2, 03.09.2003 SIGC156T120R2CL FURTHER ELECTRICAL CHARACTERISTICS: This chip data sheet ... | Original |
4 pages, |
infineon igbt die 1200V BSM100GD120DLC SIGC156T120R2CL SIGC156T120R2CL abstract |
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| Abstract: SIGC156T120R2CS IGBT Chip in NPT-technology FEATURES: · 1200V NPT technology 175um chip · low , gate resistor Chip Type VCE ICn SIGC156T120R2CS 1200V 100A This chip is used for: · , AI PS DD HV3, L 7181-T 7181-T, Edition 2, 03.09.2003 SIGC156T120R2CS MAXIMUM RATINGS: Parameter , INFINEON Technologies AI PS DD HV3, L 7181-T 7181-T, Edition 2, 03.09.2003 max. Unit us SIGC156T120R2CS , SIGC156T120R2CS FURTHER ELECTRICAL CHARACTERISTICS: This chip data sheet refers to the device data sheet ... | Original |
4 pages, |
SMPS IC 2003 SIGC156T120R2CS infineon igbt die 1200V fs100r12ks4 SIGC156T120R2CS abstract |
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| Abstract: SIGC156T120R2CQ IGBT Chip in Fieldstop-technology FEATURES: · 1200V Fieldstop technology 120um , gate resistor Chip Type VCE ICn SIGC156T120R2CQ 1200V 100A This chip is used for: · , , L7181Q L7181Q, 02.06.2005, Edition 1.0 SIGC156T120R2CQ MAXIMUM RATINGS: Parameter Symbol Value , , L7181Q L7181Q, 02.06.2005, Edition 1.0 367 84 max. Unit ns SIGC156T120R2CQ CHIP DRAWING: Edited by INFINEON Technologies AI PS DD HV3, L7181Q L7181Q, 02.06.2005, Edition 1.0 SIGC156T120R2CQ ... | Original |
4 pages, |
SP0000-83655 SIGC156T120R2CQ l7181q infineon igbt die 1200V ic 7850 infineon 7850 SIGC156T120R2CQ abstract |
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| Abstract: Preliminary SIGC156T120R2CL IGBT Chip in NPT-technology FEATURES: · 1200V NPT technology · , Applications: · drives ICn SIGC156T120R2CL 1200V 100A G Die Size E Package 12.59 X 12.59 , , 24.01.02 Preliminary SIGC156T120R2CL MAXIMUM RATINGS: Parameter Symbol Value Unit , Unit ns Preliminary SIGC156T120R2CL CHIP DRAWING: Edited by INFINEON Technologies AI PS DD HV3, L 7181-P 7181-P, Edition 1, 24.01.02 Preliminary SIGC156T120R2CL FURTHER ELECTRICAL ... | Original |
4 pages, |
SIGC156T120R2CL BSM100GD120DLC SIGC156T120R2CL abstract |
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| Abstract: Preliminary SIGC156T120R2CS IGBT Chip in NPT-technology FEATURES: · 1200V NPT technology , paralleling · integrated gate resistor Chip Type VCE ICn SIGC156T120R2CS 1200V 100A This chip , Technologies AI PS DD HV3, L 7181-T 7181-T, Edition 1, 24.01.02 Preliminary SIGC156T120R2CS MAXIMUM RATINGS , Unit ns Preliminary SIGC156T120R2CS CHIP DRAWING: Edited by INFINEON Technologies AI PS DD HV3, L 7181-T 7181-T, Edition 1, 24.01.02 Preliminary SIGC156T120R2CS FURTHER ELECTRICAL ... | Original |
4 pages, |
SIGC156T120R2CS infineon igbt die 1200V SIGC156T120R2CS abstract |
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| Abstract: Preliminary SIGC156T120R2CS IGBT Chip in NPT-technology FEATURES: · 1200V NPT technology , paralleling · integrated gate resistor Chip Type VCE ICn SIGC156T120R2CS 1200V 100A This chip , , Edition 1, 04.04.01 10:51 Preliminary SIGC156T120R2CS MAXIMUM RATINGS: Parameter Symbol , SIGC156T120R2CS CHIP DRAWING: Edited by INFINEON technologies AI IP DD HV2, L 7181-T 7181-T, Edition 1, 04.04.01 10:51 Preliminary SIGC156T120R2CS FURTHER ELECTRICAL CHARACTERISTICS: This chip data sheet ... | Original |
4 pages, |
SIGC156T120R2CS infineon igbt die 1200V SIGC156T120R2CS abstract |
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