SIGC10T60 Q67050A4283-A101 L7541A D-81541 - Datasheet Archive

 

3 IGBT Chip FEATURES: · 600V Trench & Field Stop technology · low VCE(sat) · low turn-off losses

 

SIGC10T60 SIGC10T60 3 IGBT Chip FEATURES: · 600V Trench & Field Stop technology · low VCE(sat) · low turn-off losses · short tail current · positive temperature coefficient · easy paralleling Chip Type SIGC10T60 SIGC10T60 VCE ICn 600V 20A This chip is used for: · power module · discrete components C Applications: · drives · white goods · resonant applications Die Size G Package 3.19 x 3.21 mm2 sawn on foil E Ordering Code Q67050A4283-A101 Q67050A4283-A101 MECHANICAL PARAMETER: Raster size 3.19 x 3.21 mm 2 10.2 / 7.1 mm 2 Thickness 70 µm Wafer size 150 mm Flat position 0 deg Emitter pad size 2.004 x 2.413 Gate pad size 0.361 x 0.513 Area total / active Max. possible chips per wafer 1363 pcs Passivation frontside Photoimide Emitter metallization 3200 nm AlSiCu Collector metallization Die bond Wire bond Reject ink dot size Recommended storage environment 1400 nm Ni Ag ­system suitable for epoxy and soft solder die bonding electrically conductive glue or solder Al,