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SIEMENS BST

Catalog Datasheet MFG & Type PDF Document Tags

SIEMENS BST

Abstract: SIEMENS BST h 05 90 SIEMENS 1M X 16-Bit Dynamic RAM (1 k & 4k-Refresh) HYB 3116160BSJ/BST(L)-50/-60/-70 HYB 3118160BSJ , SIEMENS HYB 3116(8)160BSJ/BST(L)-50/-60/-70 3.3V 1M X 16-DRAM I / O l 1 / 0 2 ··· 1 / 0 1 6 Block Diagram for HYB 3116160BSJ Semiconductor Group 621 SIEMENS HYB 3116(8)160BSJ/BST(L)-50/-60 , ) 623 SIEMENS HYB 3116(8)160BSJ/BST(L)-5Q/-6Q/-70 3.3V1MX 16-DRAM DC Characteristics (values , Self Refresh. Semiconductor Group 628 SIEMENS HYB 3116(8)160BSJ/BST(L)-50/-60/-70 3.3V 1M
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SIEMENS BST SIEMENS BST h 05 90 SIEMENS BST h 05 110 SIEMENS BST h 35 SIEMENS BST h 05 60 SIEMENS BST L 35 90 3116160BSJ/BST 3118160BSJ/BST 3118160BSJ/BST-50 3118160BSJ/BST-60 3118160BSJ/BST-70 3116160BSJ/BST-50

SIEMENS BST

Abstract: SIEMENS BST t SIEMENS 1M X 16-Bit EDO- Dynamic RAM (1 k & 4k-Refresh) HYB 3116165BSJ/BST(L)-50/-60/-70 HYB , HYB 3116(8)165BSJ/BST(L)-50/-60/-70 3.3V 1M X 16 EDO-DRAM SIEMENS The HYB 3116(8)165BSJ/BST is , ÃE3SL0S G D ñbW 2T5 HYB 3116(8)165BSJ/BST(L)-50/-60/-70 3.3V 1M X 16 EDO-DRAM SIEMENS Pin , HYB 3116(8)165BSJ/BST(L)-50/-60/-70 3.3V 1M X 16 EDO-DRAM SIEMENS Block Diagram for HYB 3116165BSJ Semiconductor Group 646 Ã"EBSbQS QOflbRm =153 SIEMENS HYB 3116(8)165BSJ/BST(L
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SIEMENS BST t BST70 3116165BSJ/BST 3118165BSJ/BST 3118165BSJ/BST-50 3118165BSJ/BST-60 3118165BSJ/BST-70 3116165BSJ/BST-50

SIEMENS BST

Abstract: SIEMENS BST f 35 80 SIEMENS 1M X 16-Bit Dynamic RAM (1 k & 4k-Refresh) HYB 3116160BSJ/BST(L)-50/-60/-70 HYB , /-60/-70 3.3V 1M X 16-DRAM SIEMENS The HYB 3116(8)160BSJ/BST is a 16 MBit dynamic RAM organized , )160BSJ/BST(L)-50/-60/-70 3.3V 1M X 16-DRAM SIEMENS Pin Configuration (top view) P-SOJ-42 (400 mil , 620 Ã235b05 GGfibTlS ñtil SIEMENS HYB 3116(8)160BSJ/BST(L)-50/-60/-70 3.3V1M X 16 ,   fl235fc,DS â¡Oflti'il? b34 HYB 3116(8)160BSJ/BST(L)-50/-60/-70 3.3V1M X 16-DRAM SIEMENS Absolute
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SIEMENS BST f 35 80 SIEMENS BST H 45 90 SIEMENS BST f 05 90 SIEMENS BST N 45 b 110 3116160BSJ/BST-60 3116160BSJ/BST-70 P-SOJ-42-1 P-TSOPII-50/44-1 160BSJ/BST

SIEMENS BST h 05 90

Abstract: SIEMENS BST N 35 Group 7 SIEMENS HYB5116(8)160BSJ-50/-60 HYB3116(8)160BS J/BST(L)-50/-60 1M X 16 - DRAM AC , SIEMENS AC Characteristics HYB5116(8)160BSJ-50/-60 HYB3116(8)160BS J/BST(L)-50/-60 1M X 16 - DRAM (co , ) Semiconductor Group 13 SIEMENS HYB5116(8)160BSJ-50/-60 HYB3116(8)160BS J/BST(L)-50/-60 1M x 16 - DRAM Semiconductor Group 14 SIEMENS HYB5116(8)160BSJ-50/-60 HYB3116(8)160BS J/BST(L)-50/-60 1M x 16 - DRAM Semiconductor Group 15 SIEMENS HYB5116(8)160BSJ-50/-60 HYB3116(8)160BS J/BST(L)-50/-60 1M X 16 - DRAM
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SIEMENS BST N 35 SIEMENS BST g 02 60 SIEMENS BST P SIEMENS BST l 45 90 SIEMENS BST L 15 90 SIEMENS BSt L 45 100 HYB5116160BSJ-50/-60 HYB3116160BSJ/BST HYB3118160BSJ/BST HYB5116160 HYB3116160 HYB5118160

SIEMENS BST P 45 115

Abstract: SIEMENS BST 68 Semiconductor Group 9 SIEMENS AC Characteristics HYB5116(8)165BSJ-50/-60 HYB3116(8)165BS J/BST(L)-50 , 11 SIEMENS HYB5116(8)165BSJ-50/-60 HYB3116(8)165BS J/BST(L)-50/-60 1M x 16 - EDO DRAM " H , )165BSJ-50/-60 HYB3116(8)165BS J/BST(L)-50/-60 1M x 16 - EDO DRAM Semiconductor Group 14 SIEMENS , SIEMENS HYB5116(8)165BSJ-50/-60 HYB3116(8)165BS J/BST(L)-50/-60 1M X 16 - EDO DRAM RÀ5 ÜÜÄ5 LÜÄ5 , Semiconductor Group 16 SIEMENS HYB5116(8)165BSJ-50/-60 HYB3116(8)165BS J/BST(L)-50/-60 1M x 16 - EDO
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SIEMENS BST P 45 115 SIEMENS BST 68 SIEMENS BST f 04 SIEMENS BST H 05 - 110 6165B SIEMENS BST G 03 60 HYB5116165BSJ-50/-60 HYB3116165BSJ/ HYB3118165BS P-TSOPII-50/44 P-TSOPI1-50/44

SIEMENS BST 68

Abstract: 3118165 400 mil HYB 5118165BSJ/BST-50/-60 HYB 3118165BSJ/BST-50/-60 1M X 16 EDO-DRAM SIEMENS The , HYB 5118165BSJ/BST-50/-60 HYB 3118165BSJ/BST-50/-60 1M X 16 EDO-DRAM SIEMENS Pin Names and , 5118165BSJ HYB 5118165BSJ/BST-50/-60 HYB 3118165BSJ/BST-50/-60 1M X 16 EDO-DRAM SIEMENS Absolute , ^C C 6 2, 4 HYB 5118165BSJ/BST-50/-60 HYB 3118165BSJ/BST-50/-60 1M X 16 EDO-DRAM SIEMENS , 5118165BSJ/BST-50/-60 HYB 3118165BSJ/BST-50/-60 1M X 16 EDO-DRAM SIEMENS AC Characteristics (contâ'™d
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3118165 5118165BSJ/BST-50/-60 3118165BSJ/BST-50/-60 HYB5118165 HYB3118165 P-TSOP11-50/44-1 65BSJ/BST-50/-60

SIEMENS BST

Abstract: SIEMENS BSt L 45 100 Semiconductor Group 1 1 1998-10-01 SIEMENS HYB 5118165BSJ/BST-50/-60 HYB 3118165BSJ/BST-50/-60 1M X , ) Semiconductor Group 12 1998-10-01 SIEMENS HYB 5118165BSJ/BST-50/-60 HYB 3118165BSJ/BST-50/-60 1M X , Semiconductor Group 14 1998-10-01 SIEMENS HYB 5118165BSJ/BST-50/-60 HYB 3118165BSJ/BST-50/-60 1M X , SIEMENS 1M x 16-Bit Dynamic RAM 1k Refresh (Hyper Page Mode-EDO) Advanced Information · 1 048 576 , ns ns ns ns HYB 5118165BSJ/BST-50/-60 HYB 3118165BSJ/BST-50/-60 1024 cycles /16 ms · Read
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SIEMENS BST H siemens BST H 04 40 SIEMENS BST 10 20 code marking rah BST50 Q1107 SOJ-42 SPT03055

thyristor AEG t 10 n 600

Abstract: Siemens diode Ssi L28 from the former Siemens programme, however, in future with new type designation: Si emensDesignation eupecDesignation SiemensDesignation eupecDesignation Phase control thyristors BSt R68L BSt T65 BSt T66 BSt T68H BSt T68L BSt T68N BSt T68S BSt U68H BSt U68S BSt U78S BSt BSt BSt BSt BSt P49 P49L Q63 R63H , Fast thyristors Asymm. thyristors BSt R60 BSt R62 A 931 S A 901 S Fast rectifier diodes , list II The thyristor and diode programmes of the former AEG and Siemens power semiconduc tor works
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thyristor AEG t 10 n 600 Siemens diode Ssi L28 siemens BSt P45 SIEMENS BST n61 siemens ssi k38 diode ssi L28

SIEMENS BST

Abstract: SIEMENS BST t SIEMENS AKTIENGESELLSCHAF ÛÛD D â  ÃH3St,GS QQ15154 t. â  SIEG TVpe "oRM Vrrm ¿TAV huas , US K/W BStH61 13y 200 BSt H 61 20 y 300 160 250 1 850 17 200 200 150 y: 150 140 0,17 1 BStH61 26 y 400 S9: 500 BSt H 61 33 y 500 BSt K 45 60 900 BSt K 45 80 1 200 185 290 2 290 26300 500 100 180 125 0,13 2 BSt K 45 90 1 350 S10:1000 BSt K 45110 1 650 BStL45 60 900 BStL45 80 1 200 240 375 2 900 42 000 500 100 180 125 0,11 2 BSt L 45 90 1 350
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SIEMENS BST L SIEMENS BST H 61 K45110 BSTL61 SIEMENS bst 61 BSTK45110

SIEMENS BST

Abstract: SIEMENS BST P SIEMENS AKTIENGESELLSCHAF flöD D â  Ã¶SBSbOS QQlSlbl 3 â  SIEGT-2, ^ , Fast thyristors , ,03 1 BStP61 20 300 BStP61 26 400 BStP61 33 500 BSt P 64 60 900 1300 10750 580 000 500 200 k: 25 /: 30 125 0,04 2 BSt P 64 80 1200 BSt P 64 86 1 300 BSt Q 63120 1 800 1 300 9500 450000 500 S10:1000 200 n: 40 p: 50 q: 60 125 0,035 2 BSt Q 63133 2000 BSt Q 64 80 1200 1500 11700 685000 500 S10:1000 400 k: 25 125 0,040 BSt Q 64 86 1 300 BSt
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SIEMENS BST R 64 F 86 bst h 04 20 SIEMENS BST Q Siemens thyristors R63133 SIEMENS BST n 55 80

SIEMENS BST

Abstract: SIEMENS BST 68 SIEMENS AKTIENGESELLSCHAF ÛÃ"D D â  flSBSbOS QQlSlSt, T â  SIEfif^S "SIC â type ^DRM "RRH V , ^J max °c "lh JG K/W Fig. BSt P 65 60 900 800 1250 11050 610000 500 S10:1000 100 200 125 0,04 1 BStP65 80 1 200 BStP65 90 1 350 BSt P 65110 1 650 BSt Q 68 H 253 3800 400 630 5 500 151000 1000 50 470 120 0,043 1 BSt Q 68 H 280 4 200 BSt R 63 N166 2500 1 080 1 700 17000 1440000 1000 100 350 120 0,022 2 BSt R 63 N186 2 800 BSt R 63 N 200 3 000
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L146 SIEMENS BST R 66146 SIEMENS BST T 65110 BSTR68L186 BSTQ68H280 BSTR65110 R68L186 R68L213

SIEMENS BST

Abstract: SIEMENS BST P SIEMENS AKTIENGESELLSCHAF Ã"ÛD D â  Â£5351,05 G015155 fi â  SIEG y-g,*^ Phase-control , /^iS fq typ. [IS max °c "ih JC K/W Fig. BStN45B 60 900 BSt N 45 B 80 1 200 450 710 6160 190 000 500 100 200 125 0,05 1 BSt N 45 B 90 1 350 S10:1000 BSt N 45 B110 1 650 BSt N 46 C133 2 000 340 535 4 470 100 000 500 S10:1000 50 300 125 0,06 BStN46C146 2 200 2 BSt N 46 C166 2 500 BSt N 6113 y 200 BSt N 6120 y 300 600 940 8 950 400 000 200
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BSTP45110 BSt N 45 B 90 bst 6126 y N46C166 BSTP6113Y SIEMENS BSTP46166 N46C146 P46166 P6113

SIEMENS BST

Abstract: SIEMENS BST P SIEMENS AKTIENGESELLSCHAF flöD d' ûa3SL.GS G0151L.0 1 â  SIEít Type "drm "rrh V Jtrms A , K/W Fig. BSt N 44 C 60 900 710 5 200 135000 500 200 k: 25 /: 30 125 0,055 BStN44C80 1 200 1 BStN44C86 1 300 BSt N 47 C 60 900 710 5200 135000 500 200 f: 15 125 0,055 1 BSt N 47 C 66 1000 g: 18 BSt N 49 B 53 800 700 3800 72200 500 800 d: 10 125 0,055* 1 BSt N 49 B 60 900 f: 15 BStN6113 200 BSt N 6120 300 950 8 950 400000 200 150 f: 15 140 0,05 2 BSt N
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SIEMENS BST f SIEMENS BST P 4960 SIEMENS "bst e" SIEMENS BST F 05 SIEMENS BST P 4960 d 710 hc N44C80 N44C86 N6113 P4460 P4480

SIEMENS BST h 05 90

Abstract: din 46245 SIEMENS AKTIENGESELLSCHAF SAD D â  a23SbGS GDISISB 4 â  SIEG T-2- ? Phase-control thyristors , 350 1 650 32 50 600 1 800 500 s10:1000 150 150 125 0,63 1,2 0BStH35 40 0BStH356O 0 BSt H 35 80 , 125 0,22 4 â¡ BSt N 35 60 BSt N 35 80 0BStN35 90 0BStN3511O 900 1 200 1 350 1 650 280 440 6160 190000 500 s10:1000 100 200 125 0,12 5 BStP35 60 BStP35 80 0BStP35 90 ED BSt P 35110 900 1 200 1 400 1 650 350 550 10 950 600000 500 s10:1000 100 200 125 0,09 5 BSt P 36133 BSt P 36146 BSt P 36166 2000 2
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din 46245 BSTL3590 SIEMENS BST n 35 80 DIN46245 BSTP36166 bst 36146 F3511O H356O H3511O L3511O N3511O

SIEMENS BST

Abstract: SIEMENS BStH6126 1 SIEMENS AKTIENGESELLSCHAF ÃÃD D â  Ã¶a3St.GS DD1S1ST S â  SIEG T-AT- ^ Fast thyristors type "OHM "RRM V ^TRMS A irsM 25 °C, 10 ms A //2df 25°C, 10 ms A2s (dWdt)cr V/(is (d//dt)â'ž A/(is tq , BStH6120 300 BStH6126 400 BStH6133 500 BSt L 4460 900 400 2830 40000 500 100 , f: 15 125 0,13 1 BStL6113 200 500 4460 100000 200 S9: 500 150 f: 15 g: 18 140 0,095 2 BSt L 6120 300 BSt L 6126 400 BSt L 6133 500 K A HK G Dimensions In mm 14 2312
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SIEMENS BStH6126 BSTH6126 6113 bst*480 L4460 BSTL6126 H6113 H6120 H6126 H6133 L4480 L4486
Abstract: SIEMENS BLUE LINE* 5 mm ( T i % } LED LB 5410 Vorläufige Daten / Preliminary Data , &7Oö LB 5410 SIEMENS Grenzwerts Maximum Ratifies Bezeichnung p«r«m#ter Sy¡mbol Syrnbál , « 'a lp p température rso f# D j cr la Bst! o n Forward cutâ'™ ent [ 1h m # W *c , - Semico""ductor örouo K ,m 33 > [*» KjW i LB 5410 SIEMENS Kennwerte ( - 2s , » ^ íÃ4 (typ.) ( \ ì Mz h ti ico"" ductor î-sr^uo 31 50 pF SIEMENS -
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4C33S S410-GO 703-Q LB5410

SIEMENS BST 68

Abstract: SIEMENS BST 68 L bST â  SIEMENS BFP 193W Electrical Characteristics at TA = 25°C, unless otherwise specified , SIEMENS BFP 193W NPN Silicon RF Transistor â'¢ For low noise, high-gain amplifiers up to , 1998-11-01 SIEMENS BFP193W Electrical Characteristics at r A = 25°C, unless otherwise specified , ma â  SIEMENS BFP193W SPICE Parameters (Gummel-Poon Model, Berkeley-SPICE 2G.6 Syntax , behalf of SIEMENS Small Signal Semiconductors by. Institut fur Mobil-und Satellitenfunktechnik (IMST) Â
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SIEMENS BST 68 L 900MH Q62702-F1577 53BLQS

BT 804

Abstract: SIEMENS Contents Page In tro d u c tio n .9 Sum m ary o f T ypes (incl. ordering codes). 13 Trends in M em ory T e c h n o lo g y , ) 160BSJ/BST(L) -50/-60/-70 3116(8)165BSJ/BST(L) -50/-60/-70 4 4 4 4 4 2 2 2 2 M M M M M M M M M x 4-Bit x , SIEMENS Contents Page MDRAM HYB 39M9(8)3200 x 32-Bit Multibank Dynamic RAM 3.3 V
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BT 804 514100BJ/BJL 314100BJ/BJL 514400BJ/BJL 514405BJ/BJL 314400BJ/BJL 314405BJ/BJL
Abstract: ' â  A235b05 D1EDSD1 1998-11-01 bST â  SIEMENS BC 327 BC 328 Maximum , SIEMENS PNP Silicon AF Transistors â'¢ â'¢ â'¢ â'¢ BC 327 BC 328 High current gain ,   I 6H35bQ5 01E050H S ib SIEMENS BC 327 BC 328 Electrical Characteristics at 7a = ,   SIEMENS BC 327 BC 328 Electrical Characteristics at 7a = 25 â'˜C, unless otherwise specified ,   SIEMENS BC 327 BC 328 Total power dissipation 700 Pw=f(T*; BC 327/328 7c -
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Q62702-C311 Q62702-C311-V3 Q62702-C311-V4 Q62702-C311-V2 Q62702-C312 Q62702-C312-V3

SIEMENS BST

Abstract: power supply luna siemens SIEMENS INFORMATION NOTE 16M - Bit DYNAMIC MEMORIES (Fourth Generation) General Information , FRM SIEMENS ISIDORA M This information note is mlended lo provide lechnical information on the SIEMENS fourth genera tion léM-btt DYNAMIC ACCESS MEMORIES. GENERAL INFORMATION Tftfr SIEMENS fourth g , developed by IBM and SIEMENS, as well as advanced circuit techniques to provide wide operation margins , actual product speclrum: . TYPE SIEMENS NUtitMr SpWd Sorts Susf Pattile TV PS Srtd Wifllh Destdpiicrt
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power supply luna siemens power supply luna 2 siemens 7405 power regulator LM 7405 2U53 SIEMENS BST N 61 1NF016M9 16M-B
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