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SIEMENS 230 92 O

Catalog Datasheet MFG & Type PDF Document Tags

BUZ MOSFET

Abstract: mosfet BUZ 326 30.0 42.0 1 25.0 ry . to! new design T O 92 iS J 50 60 ! 00 200 240 0.30 3.50 5.00 5.00 0.80 , 2.1. .4.0 2 1 4.0 2.1. .4.0 3.20 2.90 2.10 4.00 3.00 2.60 1.50 3.40 2,50 2.30 2.00 BUZ 92 BUZ 77B BUZ , -777 4510 Siemens C om ponents, Inc. O ptoelectronics Division 19000 Homestead Road C u pertino, CA , Mississauga, O ntario L5T 1P2 Siemens Ltd CMP Div, 4th Floor 130, P B Marg. W orli M u m b a i 18 a (+92) 51-2122 00 Fax (+92) 51-211610 a ( + 1) 408-2577910 Fax (+ 1) 408-7253439 Siemens Com ponents
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siemens 230 97 o

Abstract: SIEMENS 230 92 O ,8 DIN 46244 m ;t- â râ'" O SSB0269-5 04,7 SSB0268-W 229 Siemens Matsushita Components , ,2 SSB0529-U BN GN/YE BU ss80255-z 230 Siemens Matsushita Components General-Purpose Filters , styles A, B, K, L Circuit diagram 1 Load _I SSB0238-A Line L_ 226 Siemens Matsushita , codes 'r CR ¿-r Case Appr. Ordering code Approvals style weight A g /o*e\ 565-3  , 150 B84114-D-L30 x x x x x x 6 2 x 0,47 jiF (X2) 2x4,7 mH A 230 B84114-D-A60 x x x x x x + B 230
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B84114-D-A10 B84114-D-B10 B84114-D-K10 B84114-D-L10 B84114-D-A20 B84114-D-B20 siemens 230 97 o SIEMENS 230 92 O DIN 46 244 a6,3 siemens 230 92 siemens 230 84 O DIN 46 244 A6 B84114

leistungstransistoren

Abstract: bup314d SIEMENS N-Kanal Leistungstransistoren D i A PN Gehäuseübersicht Package Information N Channel Power Transistors \ ° s *D S ^ D S (o n ) S TO-220 AB Typ Type BUZ 100 BUZ 102 BUZ 12 , 18 23 28 A 60.0 58.0 42.0 42.0 30.0 40.0 26.0 29.0 23.0 14.0 17.5 13.0 m m m m TO-218 Typ , BUZ 346S2 58.0 30.0 23.0 14.0 12.0 BUZ 344 BUZ 345 46.0 41.0 32.0 BUZ 22 BUZ BUZ BUZ BUZ 21 , Semiconductor Group 14 SIEMENS N-Kanal Leistungstransistoren (Forts.) D T L Gehäuseübersicht Package
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leistungstransistoren bup314d buz 342 G BUP 307D siemens 230 95 O BUP400D BUZ12A BUZ11S2 BUZ10S2 BUZ100L BUZ102AL BUZ12AL
Abstract: SIEMENS Silizium-Fotodiode Silicon Photodiode BPX 92 5.4 1.5 1.2 0.8 0.6 0.5 0.3 , solder tab Semiconductor Group â  fl23St>05 0DS757G 355 2 13 SIEMENS BPX 92 , mm LXW ÃS3SbOS D057571 1ST SIEMENS BPX 92 Kennwerte ( r A = 25 °C, Normlicht A, T , Bestellnummer Ordering Code Gehäuse Package BPX 92 Q62702-P49 Leiterbandgehäuse, klares , 230 °C Löttemperatur (Lötstelle 2 mm vom Gehäuse entfernt bei Lötzeit t < 3s) Soldering -
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GE0060I5 S7S75 BPX92 0GS7573

buz350 mosfet

Abstract: 2N6960 SFN252 2N6960 BUZ350 BUZ350 SGSP577 SGSP477 IXTL250 (A) OM6018SA (A) 30 Inti Aectfr Siemens Akt , Index Inti Aectfr Inti Aectfr Siliconix Siemens Akt Gentron Gentron Gentron Gentron Omnirel Unitrode , 40 See Index Solitron Siemens Akt PhilipsElec Siemens Akt SGS-Ates SGS-Ates IXYS Corp Omnirel , IXTL25N20 (A) IAFP252 CHM13C-M155 CHM13C-M157 CHM13T-M155 CHM13T-M157 50 (A) (A) (A) (A) ¥N6~1~o~v , 200 200 220 220 220 230 240 240 240 240 240 240 240 240 240 240 240 240 80 EFM139A-M177 (A
Short Form Catalog
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BUZ37 MTH15N20 IAF610 DVD020S DVD120T DVD150T buz350 mosfet SOT23 34N efm1394m160 MTH30N20 IAFJ240 BUZ31 BUZ34 IXTL15N20

SIEMENS 230 92 O

Abstract: siemens gaas fet SIEMENS Datasheet GaAs FET CFY30 * Low noise ( Fm jn = 1.4 dB @ 4 G H z) * High gain , . Siemens Aktiengesellschaft pg. 1/6 11.01.1996 HLEH PD 21 SIEMENS GaAs FET CFY 30 , typ max Unit Drain-source saturation current V =3.5V, v = o v DS GS V = 3.5 V / D S S V G , V =4 V DS dBm 16 - I = 30 mA 0 f = 6GHz Siemens Aktiengesellschaft pg. 2/6 11.01.1996 HL EH PD 21 SIEMENS GaAs FET CFY30 Typical Common Source Noise Parameters I = 15 mA
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siemens gaas fet siemens 230 99 o siemens 230 98 O gaas fet marking a CFY 18 FET GAAS marking a Q62703-F97

SIEMENS NH FUSE

Abstract: 3ld22 Siemens LV 1 T · 2007 NSE00285a c 41 26,5 a Max. 335 Min. 230 ˜ 230 .  335 Type , _00318a 254 e 46,5 m 92 7 l l 24 22,5 o p1 32 NSE0_00319b 7 195 5 , . 17/16 Siemens LV 1 T · 2007 e L B2 60 C 92 D 10 d 5.0 e 4.5 F 55 , 45.0 B 15.0 20.0 21.5 17.5 C 10.0 15.0 20.0 23.0 NSE0_00933a Siemens LV 1 T · 2007 , © Siemens AG 2007 17 SENTRON Switching and Protection Devices â'" Switch Disconnectors
Siemens
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SIEMENS NH FUSE 3ld22 siemens VDE 0660 manual siemens M20 3LD20 3LD21 3LD22 3LD25 3LD27 3LD28

BDP 284

Abstract: Q62702-C2259 ex cr "O O U) c ·c o CM CO 3 § o o < CM O rCM CO o 5 © O O SIEMENS , O C O N N O j C O O p < o a mncocnr-^^cowco^-'r-^conn'^-T-nco^T-S SIEMENS *D 5 O O) CO O , i er CC o O CD CD SIEMENS List of Types in Alphanumerical Order Type BCR 108S BCR 108W , c C O m i fl iI O o t D i n s ^ t ü ' t f i n b U o i r ) ' í i f i ? '5 5 O) SIEMENS , CMCMCMCMCMCMCMCMCMCMCMCM CM CD O CM CM CM CM CM ( £ > CD
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Q62702-A773 Q62702-A1050 Q62702-A77 Q62702-D339 BDP 284 Q62702-C2259 BAV 217 BAT 545 bdp 497 Q62702F1240 Q62702-A829 Q62702-A859 Q62702-A950 Q62702-A952 Q62702-A608 Q62702-A718

68W SOT

Abstract: ultra low noise 12GHz , Islamabad 44000 23 West Jinnah Ave Islamabad T (+92) 51-21 22 00 Fax (+92) 51-21 16 10 PL Siemens SP , Small CHIPS for big visions Schottky Diodes h t t p : / / w w w. i n f i n e o n . c o m , 90 mA 430 mV 550 mV 0,22 pF mixer up to 12GHz, low noise 100 mA 230 mV 320 mV , Distribution Richard-Strauss-Straße 76 D-81679 München T (+49) 89 - 92 21 40 86 Fax (+49) 89 - 92 21 20 71 AUS Siemens Ltd. 885 Mountain Highway Bayswater, Victoria 3153 T (+61) 3-97 21 21 11 Fax (+61
Infineon Technologies
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68W SOT ultra low noise 12GHz 64W SOT23 AUs SOT363 BAS 40-04 Infineon BAS 68-04 B132-H7456-GI-X-7600

04n60s5

Abstract: transistor smd CF RQ SIEMENS Cool MOSTM Power Transistor · New revolutionary high voltage technology · Ultra low gate , SPB04N60S5 C O L ^ M O S fc P o w e r S e m ic o n d u c to r s Type SPP04N60S5 SPB04N60S5 ^DS 600 , Group 1 01 /1999 SIEMENS Electrical Characteristics Parameter at T\ = 25 °C, unless otherwise , vertical without blown air. Semiconductor Group 2 01 / 1999 SIEMENS Electrical Characteristics , Semiconductor Group 3 01 /1999 SIEMENS Electrical Characteristics Parameter at 7 "; = 25 °C, unless
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04n60s5 transistor smd CF RQ AG qd transistor SMD AG qd SMD 04n60 marking S5 6N60S5/SPB 6N60S5 P-T0220-3-1 P-T0263-3-2 04N60S5 Q67040-S4200

62703-F

Abstract: siemens gaas fet V V mA mW °C °C Siemens 923 32E D Ô 23 b3 2 0 0 0 1 7 3 4 " ! 4 « S IP SIEMENS , -110 -116 -122 -129 -137 -145 -154 -163 -173 179 171 ' Siemens 927 BEE D Ô 23 b3 2 , 118 114 109 104 100 96 92 89 85 Siemens 931 32E D fl23b32Q GG173S7 3 H S I P SPCL-, SEMICONDS CFY 30 SIEMENS/ T-31-25 / d = 30 mA, Ubs = 3.5 V, ¿ó = 50 ÍJ S ti= f(f) 90° Sl2 = , BSE D GaAs FET fl2 3 b3 2ü SIEMENS/ 0G1734Ô 2 « S I P SPCLi SEMICONDS T " '3 1 CFY30 ·
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62703-F GaAs FET cfy 19 Q173S T--31--25
Abstract: min. typ. max. O Values - 4.1 - o Symbol - 9.2 - Qg - 17 , 14.00 4.75 0.65 1.32 2.54 tVD. 4.30 1.17 2.30 9 4.50 1.40 2.72 01 /1 9 9 9 SIEMENS , SIEMENS SPP04N60S5 SPB04N60S5 Preliminary data Cool MOSâ"¢ Power Transistor â'¢ New , SIEMENS SPP04N60S5 SPB04N60S5 Preliminary data Electrical Characteristics Parameter Symbol , . Semiconductor Group 2 01 /1 9 9 9 SIEMENS SPP04N60S5 SPB04N60S5 Preliminary data Electrical -
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Q67040-S4201

CFY30

Abstract: CFY 18 SIEMENS Datasheet GaAs FET CFY30 * Low noise ( Fw, = 1.4 dB @ 4 G H z ) * High gain , 1541 01.96 SIEMENS GaAs FET CFY 30 Electrical characteristics at Ta = 25°C, unless otherwise specified Characteristics Drain-source saturation current VOS =3.5V, v OS = o v Pinch-off , 1542 01.96 SIEMENS GaAs FET CFY30 Typical Common Source Noise Parameters I = 15 mA D , ] Semiconductor Group 1543 01.96 SIEMENS GaAs FET CFY30 Output characteristics l0 = f (VD S
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Abstract: SIEMENS CFY 30 GaAs FET â'¢ â'¢ â'¢ â'¢ â'¢ â'¢ â'¢ Low noise ( Fm = 1.4 dB @ 4 GHz , 80 mA Channel temperature TCh 150 °C Storage temperature range O ) h , < 70°C)2) Semiconductor Group 1881 1998-11-01 öE35bD5 G 1 E E E 7 1 DOS â  SIEMENS , T41 â  SIEMENS CFY 30 Typical Common Source Noise Parameters (lD = 15 mA, VD = 3.5 V, Z0 = , ›235b05 D1HEE73 =JÃö â  SIEMENS CFY 30 Output characteristics fo = f (VD ) S 0 1 2 3 4 -
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D15SS7

siemens electrolytic

Abstract: !« o !§ J ; KALOiÓÍ i 1) To obtain larger clearances 256 Siemens Matsushita , »' d ia m e te r S p a c in g o i mounting ho le s mrr¡ L e n g th of in s u la tin g s tn p mm O rd e rin g c o d e Prif'e in D M m m 1 -t For non-insulated mounting 25 30 35 35,7 40 51,6 51 , 230 230 260 325 325 420 420 495 590 it 3) y ¡ B44030-A25 B44030-A30 844030- A35 B44030-A36 , ,62 1,79 1,47 1,95 2,12 1,92 2,05 2,43 2,95 3.45 1) Ring clip height (dim ension f y ) 2 9 mm 2
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siemens electrolytic B44030-A40 B44030-A50 B44030-A51 B44030-A64 B44030-A65 B44030-A75

B81121 X2 mkt

Abstract: B81121 X2 mkp 00 Fax (+92)51-21 16 10 PL Siemens SP.z.o.o. ul.Zupnicza 11 PL-03-821 Warszawa T (+48)22-8 70 , Technologies AG http://www.infineon.com Power Management & Supply N e v e r s t o p t h i n k i n , AN-TDA16888-0-010323 V1.1 0,73 196,0 98,9 4,4 0,51 134,0 98,3 5,1 0,21 51,0 90,4 16,0 4,4 2,5 230 230 230 230 230 270 270 270 270 270 380,00 380,00 380,00 380,00 380,00 380,00 380 , turns 0,22 mm Ø 34 turns 0,40 mm Ø Pin 5 Pin 1 Pin 7 Pin 2 Pin 13 Pin 16 Pin 14 7 turns
Infineon Technologies
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B81121 X2 mkt B81121 X2 mkp ELKO capacitors MKT .22K 250V X2 EPCOS 230 00 O ELKO CAPACITOR 63v 2,2 RUS-125 S-164

siemens igbt BSM 25GD 100D

Abstract: siemens igbt BSM 25gd -223 TO-92 SOT-223 SOT-89 TO-92 T O -18 TO -202 TO-92 SOT-23 TO-92 SOT-223 TO-92 446 446 394 394 489 338 , .8 . . - 2 . 0 -0 .8 . .-2 .0 0 BSP 92 0 BSS 92 0 BSS 192 Siemens Aktiengesellschaft 15 , in te rn a l flo a tin g d riv e c ir c u it o n re q u e s t. Siemens Aktiengesellschaft 18 , AL BUZ 72 L BUZ 345 BUZ 349 Siemens Aktiengesellschaft Typenübersicht/Selection Guide SIPMOS , 1078 El F BUZ F BUZ f BUZ F BUZ 210 211 384 385 F BUZ 215 £ BUZ 330 E OBUZ 331 Siemens
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siemens igbt BSM 25GD 100D siemens igbt BSM 25gd bsm25gd100d BSS 97 bts412a BSM15GD100D 100GAL

siemens EM 235

Abstract: module siemens EM 235 SIEMENS Table of C ontents 1 1.1 1.2 1.3 1.4 1.5 1.6 2 2.1 2.2 2.2.1 2.2.2 2.2.3 2.3 2.4 2.5 3 3.1 , . 36 Motorola M o d e , . 166 Application N o te s . Test L o o p s , Internal Channelwise Test L o o p .
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siemens EM 235 module siemens EM 235 siemens s-7 214 MUNICH32

la 4202

Abstract: SIEMENS 230 92 O GND Q2 Vs 7 12 Semiconductor Group 580 SIEMENS TLE 4202 B Supply Voltage Vs 6 O u tp u t Q1 O u tp u t Q2 Block Diagram Semiconductor Group 581 SIEMENS Absolute , SIEMENS 2-A DC Motor Driver Preliminary Data Features · Drives motors up to 2 A · Integrated , approx. 160"C the source transistors are turned off. Sem iconductor Group 579 9.92 SIEMENS TLE 4202 B 1 2 3 4 5 6 7 13 11 GND Ql Q2 K; 12 AEP O O S` 2 Pin Configuration
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la 4202 siemens sr 35 P-T0220-7-1 VPT05108 Q67000-A8225 11CTC

3th4293

Abstract: siemens 3th42 ) -AC-15 < 230 V e © Siemens AG 2013 Contactor Relays SIRIUS 3RH2 contactor relays, 4- and 8 , © Siemens AG 2013 Switching Devices â'" Contactors and Contactor Assemblies â'" Contactor , www.siemens.com/sirius/conversion-tool Siemens IC 10 · 10 · 2014 Siemens IC 2014 5 5/2 © Siemens , žž "Overview". 5/2 Siemens IC 10 · 2014 © Siemens AG 2013 Switching Devices â'" Contactors and , shown on orange backgrounds. Siemens IC 10 · 2014 5/3 © Siemens AG 2013 Contactor Relays
Siemens
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3RH21 3th4293 siemens 3th42 Ntc 500-11 3TH2 40E 3TH42 3TH43 3RH24 3RS18 3TG10 3RH11 PTMT0730
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