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Part : SI4466DY Supplier : Fairchild Semiconductor Manufacturer : Rochester Electronics Stock : 34,013 Best Price : $0.40 Price Each : $0.49
Part : SI4466DY Supplier : Vishay Siliconix Manufacturer : America II Electronics Stock : 1,741 Best Price : - Price Each : -
Part : SI4466DY-T1-E3 Supplier : Vishay Siliconix Manufacturer : America II Electronics Stock : 2,435 Best Price : - Price Each : -
Part : SI4466DY Supplier : Vishay Siliconix Manufacturer : Bristol Electronics Stock : 754 Best Price : - Price Each : -
Part : SI4466DY Supplier : - Manufacturer : Bristol Electronics Stock : 45 Best Price : - Price Each : -
Part : SI4466DY-T1 Supplier : Vishay Siliconix Manufacturer : Bristol Electronics Stock : 4,516 Best Price : $0.3412 Price Each : $1.3125
Part : SI4466DY-T1-E3 Supplier : Vishay Intertechnology Manufacturer : Bristol Electronics Stock : 2,032 Best Price : - Price Each : -
Part : SI4466DYT1 Supplier : Vishay Siliconix Manufacturer : Bristol Electronics Stock : 2,767 Best Price : - Price Each : -
Part : SI4466DY-T1-E3 Supplier : Vishay Intertechnology Manufacturer : Farnell element14 Stock : - Best Price : £0.8310 Price Each : £0.8310
Part : SI4466DY Supplier : Vishay Siliconix Manufacturer : New Advantage Stock : 706 Best Price : - Price Each : -
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SI4466DY Datasheet

Part Manufacturer Description PDF Type
SI4466DY Fairchild Semiconductor Single N-Channel 2.5V Specified PowerTrench MOSFET Original
Si4466DY Toshiba Power MOSFETs Cross Reference Guide Original
Si4466DY Vishay N-Channel 2.5-V (D-S) MOSFET Original
SI4466DY_NL Fairchild Semiconductor Single N-Channel 2.5V Specified PowerTrench MOSFET Original
Si4466DY SPICE Device Model Vishay N-Channel 2.5-V (G-S) MOSFET Original
SI4466DY-T1 Vishay Intertechnology N-Channel 2.5-V (G-S) Rated MOSFET Original
SI4466DY-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 20V 9.5A 8-SOIC Original
SI4466DY-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 20V 9.5A 8-SOIC Original

SI4466DY

Catalog Datasheet MFG & Type PDF Document Tags

MOSFET 4466

Abstract: FDS6570A Si4466DY Single N-Channel 2.5V Specified PowerTrench MOSFET General Description Features , Reel Size Tape Width Quantity Si4466DY 13'' 12mm 2500 units Si4466DY Rev. A Si4466DY FDS6570A January 2001 Symbol TA = 25°C unless otherwise noted Parameter Test , Test: Pulse Width 300 µs, Duty Cycle 2.0% Si4466DY Rev. A FDS6570A Si4466DY Electrical Characteristics FDS6570A Si4466DY Typical Characteristics 50 2.5 RDS(ON) , NORMALIZED DRAIN-SOURCE
Fairchild Semiconductor
Original
MOSFET 4466 4466 SO-8 4466DY

70910

Abstract: Si4466DY SPICE Device Model Si4466DY Vishay Siliconix N-Channel 2.5-V (G-S) MOSFET CHARACTERISTICS · N-Channel Vertical DMOS · Macro Model (Subcircuit Model) · Level 3 MOS · Apply for both Linear and Switching Application · Accurate over the -55 to 125°C Temperature Range · Model the Gate Charge , -60074Rev. B, 23-Jan-06 www.vishay.com 1 SPICE Device Model Si4466DY Vishay Siliconix SPECIFICATIONS , Si4466DY Vishay Siliconix COMPARISON OF MODEL WITH MEASURED DATA (TJ=25°C UNLESS OTHERWISE NOTED
Vishay Siliconix
Original
70910 S-60074R

Si4466DY

Abstract: SPICE Device Model Si4466DY Vishay Siliconix N-Channel 2.5-V (G-S) MOSFET CHARACTERISTICS · N-Channel Vertical DMOS · Macro Model (Subcircuit Model) · Level 3 MOS · Apply for both Linear and Switching Application · Accurate over the -55 to 125°C Temperature Range · Model the Gate Charge , -Apr-01 www.vishay.com 1 SPICE Device Model Si4466DY Vishay Siliconix SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE , -Apr-01 SPICE Device Model Si4466DY Vishay Siliconix COMPARISON OF MODEL WITH MEASURED DATA (TJ=25°C UNLESS
Vishay Siliconix
Original

4466 8 pin mosfet pin voltage

Abstract: MOSFET 4466 Si4466DY FDS6570A January 2001 Si4466DY Single N-Channel 2.5V Specified PowerTrench MOSFET , and Ordering Information Device Marking 4466 Device Si4466DY Reel Size 13'' Tape Width 12mm Quantity 2500 units 200 1 Fairchild Semiconductor International Si4466DY Rev. A FDS6570A Si4466DY Electrical Characteristics Symbol BVDSS BVDSS T J IDSS IGSSF IGSSR TA = 25 , : Pulse Width 300 µs, Duty Cycle 2.0% Si4466DY Rev. A FDS6570A Si4466DY Typical
Fairchild Semiconductor
Original
4466 8 pin mosfet pin voltage

Si4466DY

Abstract: Si4466DY N-Channel 2.5-V (G-S) Rated MOSFET Product Summary VDS (V) rDS(on) (W) 0.009 @ VGS = 4.5 V "13.2 0.013 @ VGS = 2.5 V 20 ID (A) "11 D SO-8 S 1 8 D S 2 , document #70716. Siliconix S-54695-Rev. A, 15-Sep-97 3-1 New Product Si4466DY , , duty cycle v 2%. 3-2 New Product Siliconix S-54695-Rev. A, 15-Sep-97 Si4466DY Typical , New Product Si4466DY Typical Characteristics (25_C Unless Otherwise Noted) Source-Drain Diode
Temic Semiconductors
Original
S-54695--R

Si4466DY

Abstract: Si4466DY Vishay Siliconix N-Channel 2.5-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(ON) (W) 0.009 @ VGS = 4.5 V "13.2 0.013 @ VGS = 2.5 V 20 ID (A) "11 D SO-8 S 1 , -54695-Rev. A, 15-Sep-97 Siliconix was formerly a division of TEMIC Semiconductors 3-1 Si4466DY Vishay , Si4466DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS OTHERWISE NOTED) Output Characteristics , TEMIC Semiconductors 3-3 Si4466DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS
Vishay Siliconix
Original

Si4466DY

Abstract: Si4466DY Vishay Siliconix N-Channel 2.5-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.009 @ VGS = 4.5 V "13.2 0.013 @ VGS = 2.5 V 20 ID (A) "11 D SO-8 S 1 8 D , : 70716 S-00652-Rev. B, 27-Mar-00 www.vishay.com S FaxBack 408-970-5600 2-1 Si4466DY Vishay , Number: 70716 S-00652-Rev. B, 27-Mar-00 Si4466DY Vishay Siliconix TYPICAL CHARACTERISTICS (25 , ) www.vishay.com S FaxBack 408-970-5600 2-3 Si4466DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS
Vishay Siliconix
Original
S-00652--R

playstation 2 power supply

Abstract: playstation 1 power supply (MiniMOS) · SI4466DY · SI9925DY · SI4466DY · BSP030 · PHN103T · BSH108 · BSP100 · SI4420DY · , SI4466DY · SI9925DY · SI4466DY · BSP030 · PHN103T · BSH108 · BSP100 · SI4420DY · SI4410DY · , control Semiconductors · SI4466DY · SI9925DY · SI4466DY · BSP030 · PHN103T · BSH108 · BSP100
Philips Semiconductors
Original
playstation 2 power supply playstation 1 power supply SONY PLAYSTATION 3 sony playstation 3 power supply sony playstation 1 power supply sony playstation 2 power supply 733MH 250MH 128MB PC800 10/100M PHN210T
Abstract: Si4466DY Vishay Siliconix N-Channel 2.5-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.009 @ VGS = 4.5 V "13.2 0.013 @ VGS = 2.5 V 20 ID (A) "11 D SO-8 S 1 8 D , : 70716 S-00652-Rev. B, 27-Mar-00 www.vishay.com S FaxBack 408-970-5600 2-1 Si4466DY Vishay , Number: 70716 S-00652-Rev. B, 27-Mar-00 Si4466DY Vishay Siliconix TYPICAL CHARACTERISTICS (25 , ) www.vishay.com S FaxBack 408-970-5600 2-3 Si4466DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS Vishay Siliconix
Original

135-A70

Abstract: Si4466DY Top View S Ordering Information: Si4466DY-T1-E3 (Lead (Pb)-free) Si4466DY-T1-GE3 (Lead (Pb , Si4466DY Vishay Siliconix N-Channel 2.5-V (G-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V , . Document Number: 71820 S09-0767-Rev. F, 04-May-09 www.vishay.com 1 Si4466DY Vishay Siliconix , S09-0767-Rev. F, 04-May-09 Si4466DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless , , 04-May-09 www.vishay.com 3 Si4466DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless
Vishay Siliconix
Original
135-A70 2002/95/EC 4466DY-T1-E3 4466DY-T1-GE3 S09-0767-R
Abstract: View Ordering Information: Si4466DY Si4466DY-T1 (with Tape and Reel) 8 7 6 5 D D D D S N-Channel MOSFET , Si4466DY Vishay Siliconix N-Channel 2.5-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on , _C/W 1 Si4466DY Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED , -31062-Rev. D, 26-May-03 2 Si4466DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED , Si4466DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.4 200 Vishay Siliconix
Original
4466DY-T1 S-31062--R

135-A70

Abstract: Si4466DY Si4466DY New Product Vishay Siliconix N-Channel 2.5-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.009 @ VGS = 4.5 V 13.5 0.013 @ VGS = 2.5 V 20 ID (A) 11 D SO-8 S , : 71820 S-20218-Rev. C, 01-Apr-02 www.vishay.com 1 Si4466DY New Product Vishay Siliconix , ) Document Number: 71820 S-20218-Rev. C, 01-Apr-02 Si4466DY New Product Vishay Siliconix TYPICAL , Gate-to-Source Voltage (V) www.vishay.com 3 Si4466DY New Product Vishay Siliconix TYPICAL
Vishay Siliconix
Original
S-20218--R

Siliconix

Abstract: The subcircuit model was extracted and optimized SPICE Device Model Si4466DY N-Channel 2.5-V (G-S) Rated MOSFET Characteristics · N-channel Vertical DMOS · Macro-Model (Subcircuit) · Level 3 MOS · Applicable for Both Linear and Switchmode · Applicable Over a -55 to 125°C Temperature Range · Models Gate Charge, Transient, and Diode Reverse , request FaxBack document #. Siliconix 4/17/01 Document: 70910 1 SPICE Device Model Si4466DY , presented in the model circuit Siliconix 4/17/01 Document: 70910 2 SPICE Device Model Si4466DY
Vishay Intertechnology
Original
Siliconix The subcircuit model was extracted and optimized
Abstract: Si4466DY Vishay Siliconix N-Channel 2.5-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) 0.009 @ VGS = 4.5 V 0.013 @ VGS = 2.5 V ID (A) "13.2 "11 D SO-8 S S S G 1 2 3 4 Top , 50 Unit _C/W 2-1 Si4466DY Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE , FaxBack 408-970-5600 2-2 Document Number: 70716 S-00652-Rev. B, 27-Mar-00 Si4466DY Vishay , -Mar-00 www.vishay.com S FaxBack 408-970-5600 2-3 Si4466DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS Vishay Siliconix
Original

CK408

Abstract: CK-408 M IC S em icond uctors www .siliconix.com 3-27 Si4466DY_ Vishay , _ 4466DY Vishay Siliconix N-Channel 2.5-V (D-S) MOSFET V d*{ V ) 0.009 @ V g s = 4 .5 V 20 0.013 @ V G S r 2 . 5 V h» (A) ± 13.2 ±11 A SO S i o - it *t , iiiconix w a s form erly a division of T E M IC Sem iconductors www .siiiconix.com 3-25 SÌ4466DY , .sillconlx.com 3-26 SÌ4466DY Vishay Siliconix TYPICAL CHARACTERISTICS (25°C UNLESS OTHERWISE NOTED) O
-
OCR Scan
CK408 CK-408 S-54695--

Si4466DY

Abstract: SPICE Device Model Si4466DY Vishay Siliconix N-Channel 2.5-V (G-S) MOSFET CHARACTERISTICS · N-Channel Vertical DMOS · Macro Model (Subcircuit Model) · Level 3 MOS · Apply for both Linear and Switching Application · Accurate over the -55 to 125°C Temperature Range · Model the Gate Charge , -60074Rev. B, 23-Jan-06 www.vishay.com 1 SPICE Device Model Si4466DY Vishay Siliconix SPECIFICATIONS , Si4466DY Vishay Siliconix COMPARISON OF MODEL WITH MEASURED DATA (TJ=25°C UNLESS OTHERWISE NOTED
Vishay Siliconix
Original

332AL

Abstract: Tem ic S e m i c o n d u c t o r s SÌ4466DY N-Channel 2.5-V (G-S) Rated MOSFET Product Summary V D S (V ) 20 0.013 @ V GS = 2.5 V ± 11 r DS(on) ( S ) 0.009 @ Vo s = 4.5 V I d (A ) ± 1 3 .2 , Unit °c/w Siliconix S-54695- Rev. A, 15-Sep-97 3 -2 9 New Product SÌ4466DY , Product Siliconix S-54695-Rev. A, 15-Sep-97 Temic S e m i c o n d u c t o r s SÌ4466DY , -8 SÌ4466DY Typical Characteristics (25 °C Unless Otherwise Noted) Tem ic S e m i c o n d u c t o r s
-
OCR Scan
332AL
Abstract: View Ordering Information: Si4466DY Si4466DY-T1 (with Tape and Reel) 8 7 6 5 D D D D S N-Channel MOSFET , Si4466DY Vishay Siliconix N-Channel 2.5-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on , _C/W 1 Si4466DY Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED , -31062-Rev. D, 26-May-03 2 Si4466DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED , Si4466DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.4 200 Vishay Siliconix
Original

A302V

Abstract: : Si4466DY-T1 Si4466DY-T1-E3 (Lead (Pb)-free) N-Channel MOSFET 8 7 6 5 D D D D G ABSOLUTE MAXIMUM RATINGS TA , Si4466DY Vishay Siliconix N-Channel 2.5-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on , Unit Si4466DY Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter , -Jun-06 Si4466DY Vishay Siliconix TYPICAL CHARACTERISTICS 0.020 25 °C unless noted 4000 r DS(on) - , . Gate-to-Source Voltage Document Number: 71820 S-61005-Rev. E, 12-Jun-06 www.vishay.com 3 Si4466DY
Vishay Siliconix
Original
A302V S-61005-R

Si4466DY

Abstract: Si4466DY N-Channel 2.5-V (G-S) Rated MOSFET Product Summary VDS (V) rDS(on) (W) 0.009 @ VGS = 4.5 V "13.2 0.013 @ VGS = 2.5 V 20 ID (A) "11 D SO-8 S 1 8 D S 2 , document #70716. Siliconix S-54695-Rev. A, 15-Sep-97 3-1 New Product Si4466DY , , duty cycle v 2%. 3-2 New Product Siliconix S-54695-Rev. A, 15-Sep-97 Si4466DY Typical , ) 3-3 New Product Si4466DY Typical Characteristics (25_C Unless Otherwise Noted) Source-Drain
Temic Semiconductors
Original

Si4466DY-T1-E3

Abstract: 135-A70 Si4466DY Vishay Siliconix N-Channel 2.5-V (G-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () 0.009 at VGS = 4.5 V 13.5 0.013 at VGS = 2.5 V 20 ID (A) 11 · Halogen-free , . Document Number: 71820 S09-0767-Rev. F, 04-May-09 www.vishay.com 1 Si4466DY Vishay Siliconix , S09-0767-Rev. F, 04-May-09 Si4466DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless , , 04-May-09 www.vishay.com 3 Si4466DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless
Vishay Siliconix
Original
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