SGP20N60HS SGW20N60HS Q67041-A4712-A003 Q67040-S4236-A002 0/15V D-81541 - Datasheet Archive

 

Preliminary Datasheet SGW20N60HS High Speed IGBT in NPT-technology C · 30% lower Eoff compared to previous generation 12

 

SGP20N60HS SGP20N60HS Preliminary Datasheet SGW20N60HS SGW20N60HS High Speed IGBT in NPT-technology C · 30% lower Eoff compared to previous generation 12 µJ/A · Short circuit withstand time ­ 10 µs · NPT-Technology for 600V applications offers: - parallel switching capability - very tight parameter distribution - high ruggedness, temperature stable behaviour Type VCE IC VCE(sat) Tj SGP20N60HS SGP20N60HS 600V 20 3.5V SGW20N60HS SGW20N60HS 600V 20 3.5V G E Package Ordering Code 150°C TO-220AB Q67041-A4712-A003 Q67041-A4712-A003 150°C TO-247AC Q67040-S4236-A002 Q67040-S4236-A002 Maximum Ratings Parameter Symbol Collector-emitter voltage VCE DC collector current Value IC 600 Unit V A TC = 25°C 40 TC = 100°C 19 Pulsed collector current, tp limited by Tjmax ICpul s 80 Turn off safe operating area - 80 VGE ±20 V tSC 10 µs Ptot 178 W Operating junction and storage temperature Tj , Tstg -55.+150 °C Soldering temperature, 1.6mm (0.063 in.) from case for 10s - VCE 600V, Tj 150°C Gate-emitter voltage 1) Short circuit withstand time VGE = 15V, VCC 600V, Tj 150°C Power dissipation TC = 25°C 1) 260 Allowed number of short circuits: 1s. Power Semiconductors 1 Sep-01 SGP20N60HS SGP20N60HS Preliminary Datasheet SGW20N60HS SGW20N60HS Thermal Resistance Parameter Symbol Conditions Max. Value Unit 0.7 K/W Characteristic IGBT thermal resistance, RthJC junction ­ case Thermal resistance, TO-247AC RthJA 40 junction ­ ambient Electrical Characteristic, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Value min. Typ. max. 600 - - Unit Static Characteristic Collector-emitter breakdown voltage V ( B R ) C E S V G E = 0V , I C = 5 00 µA Collector-emitter saturation voltage VCE(sat) V V G E = 15 V , I C = 20 A T j =2 5 °C 2.8 T j =1 5 0° C 3.5 Gate-emitter threshold voltage VGE(th) I C = 30 0 µA , V C E = V G E Zero gate voltage collector current ICES V C E = 60 0 V, V G E = 0 V 3 4 5 µA T j =2 5 °C - - 40 T j =1 5 0° C - - 2500 100 Gate-emitter leakage current IGES V C E = 0V , V G E =2 0 V - - Transconductance gfs V C E = 20 V , I C = 20 A - 14 S Input capacitance Ciss V C E = 25 V , - 1100 pF Output capacitance Coss V G E = 0V , - 160 Reverse transfer capacitance Crss f= 1 MH z - 63 Gate charge QGate V C C = 48 0 V, I C =2 0 A - 100 nC nA Dynamic Characteristic V G E = 15 V Internal emitter inductance LE T O - 24 7A C - 13 nH IC(SC) V G E = 15 V ,t S C 10 µs V C C 6 0 0 V, T j 15 0° C - 170 A measured 5mm (0.197 in.) from case Short circuit collector current 1) 1) Allowed number of short circuits: 1s. Power Semiconductors 2 Sep-01 SGP20N60HS SGP20N60HS Preliminary Datasheet SGW20N60HS SGW20N60HS Switching Characteristic, Inductive Load, at Tj=25 °C Parameter Symbol Conditions Value min. typ. max. Unit IGBT Characteristic Turn-on delay time td(on) T j =2 5 °C , - 16 Rise time tr V C C = 40 0 V, I C = 2 0 A, - 6 Turn-off delay time td(off) V G E = 0/ 15 V , - 57 tf R G = 2. 2 - 23 Turn-on energy Eon - 0 Turn-off energy Eoff - 0.18 Total switching energy Energy losses include "tail" and diode reverse recovery. Ets Turn-on delay time td(on) T j =2 5 °C , - 18 Rise time tr V C C = 40 0 V, I C = 2 0 A, - 16 Turn-off delay time td(off) V G E = 0/ 15 V , - 207 Fall time tf R G = 16 - 13 Turn-on energy Eon - 0.41 Turn-off energy Eoff - 0.30 Total switching energy Energy losses include "tail" and diode reverse recovery. Ets Fall time Power Semiconductors 3 ns mJ ns mJ - Sep-01 SGP20N60HS SGP20N60HS Preliminary Datasheet SGW20N60HS SGW20N60HS Switching Characteristic, Inductive Load, at Tj=150 °C Parameter Symbol Conditions Value min. typ. max. Unit IGBT Characteristic Turn-on delay time td(on) T j =1 5 0° C - 15 Rise time tr V C C = 40 0 V, - 6.4 Turn-off delay time td(off) I C = 20 A , - 65 tf V G E = 0/ 15 V , - 35 Eon R G = 2 .2 - Turn-off energy Eoff - Total switching energy Ets Energy losses include "tail" and diode reverse recovery. Turn-on delay time td(on) T j =1 5 0° C - 17.2 Rise time tr V C C = 40 0 V, - 16 Turn-off delay time td(off) I C = 20 A , - 222 Fall time tf V G E = 0/ 15 V , - 13 Turn-on energy Eon R G = 1 6 - 0.6 Turn-off energy Eoff - 0.36 Total switching energy Ets Energy losses include "tail" and diode reverse recovery. ns Fall time Turn-on energy Power Semiconductors 4 mJ 0.24 ns mJ - Sep-01 Preliminary Datasheet SGP20N60HS SGP20N60HS SGW20N60HS SGW20N60HS 90A 100A tp=4µs 70A IC, COLLECTOR CURRENT IC, COLLECTOR CURRENT 80A T C=80°C 60A 50A T C=110°C 40A 30A Ic 20A 10A 50µs 200µs 1ms 1A Ic incorrect due to missing Eon values 10A 0A 15µs DC 0,1A 10Hz 100Hz 1kHz 10kHz 100kHz f, SWITCHING FREQUENCY Figure 1. Collector current as a function of switching frequency (Tj 150°C, D = 0.5, VCE = 400V, VGE = 0/+15V, RG = 11) 1V 10V 100V 1000V VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0, TC = 25°C, Tj 150°C;VGE=15V) 200W 40A 180W IC, COLLECTOR CURRENT Ptot, POWER DISSIPATION 160W 140W 120W 100W 80W 60W 40W 30A 20A 10A 20W 0W 25°C 50°C 75°C 100°C 125°C 0A 25°C 150°C TC, CASE TEMPERATURE Figure 3. Power dissipation as a function of case temperature (Tj 150°C) Power Semiconductors 50°C 75°C 100°C 125°C 150°C TC, CASE TEMPERATURE Figure 4. Collector current as a function of case temperature (VGE 15V, Tj 150°C) 5 Sep-01 SGP20N60HS SGP20N60HS Preliminary Datasheet SGW20N60HS SGW20N60HS 60A VGE=20V 15V 13V 11V 9V 7V IC, COLLECTOR CURRENT IC, COLLECTOR CURRENT 50A 40A 30A 20A 10A 0A 0V 2V 4V 6V VCE, COLLECTOR-EMITTER VOLTAGE Figure 6. Typical output characteristic (Tj = 150°C) 60A IC, COLLECTOR CURRENT T J=-55°C 25°C 150°C 40A 20A 0A 0V 2V 4V 6V 8V 10V VCE(sat), COLLECTOR-EMITT SATURATION VOLTAGE VCE, COLLECTOR-EMITTER VOLTAGE Figure 5. Typical output characteristic (Tj = 25°C) 6,0V 5,5V IC=40A 5,0V 4,5V 4,0V IC=20A 3,5V 3,0V IC=10A 2,5V 2,0V 1,5V 0,0V -50°C 0°C 50°C 100°C 150°C TJ, JUNCTION TEMPERATURE Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (VGE = 15V) VGE, GATE-EMITTER VOLTAGE Figure 7. Typical transfer characteristic (VGE=10V) Power Semiconductors 8V 6 Sep-01 SGP20N60HS SGP20N60HS Preliminary Datasheet SGW20N60HS SGW20N60HS 1000 ns td(off) t, SWITCHING TIMES t, SWITCHING TIMES 100ns tf td(on) 10ns td(off) 100 ns tf 10 ns td(on) tr tr 1ns 0A 10A 20A 30A 1 ns 40A 0 IC, COLLECTOR CURRENT Figure 9. Typical switching times as a function of collector current (inductive load, TJ=150°C, VCE=400V, VGE=0/15V 0/15V, RG=16) VGE(th), GATE-EMITT TRSHOLD VOLTAGE t, SWITCHING TIMES 20 30 40 50 6,0V 1000ns td(off) 100ns tr td(on) 10ns 0°C 10 RG, GATE RESISTOR Figure 10. Typical switching times as a function of gate resistor (inductive load, TJ=150°C, VCE=400V, VGE=0/15V 0/15V, IC=20A) tf 50°C 100°C 5,0V 4,5V max. 4,0V 3,5V typ. 3,0V 2,5V min. 2,0V 150°C -50°C 0°C 50°C 100°C 150°C TJ, JUNCTION TEMPERATURE Figure 12. Collector current as a function of case temperature (VGE 15V, Tj 150°C) TJ, JUNCTION TEMPERATURE Figure 11. Typical switching times as a function of junction temperature (inductive load, VCE=400V, VGE=0/15V 0/15V, IC=20A, RG=16) Power Semiconductors 5,5V 7 Sep-01 SGP20N60HS SGP20N60HS Preliminary Datasheet SGW20N60HS SGW20N60HS 2,0 mJ *) Eon include losses due to diode recovery E, SWITCHING ENERGY LOSSES E, SWITCHING ENERGY LOSSES 2,0mJ Eon* 1,0mJ Eoff 1,5 mJ 1,0 mJ 10A 20A 30A 0 20 30 40 50 0 10 K/W *) Eon include losses due to diode recovery ZthJC, TRANSIENT THERMAL RESISTANCE E, SWITCHING ENERGY LOSSES 10 RG, GATE RESISTOR Figure 14. Typical switching energy losses as a function of gate resistor (inductive load, TJ=150°C, VCE=400V, VGE=0/15V 0/15V, IC=20A 1,5mJ 1,0mJ 0,5mJ 0,0mJ 0°C Eoff 0,0 mJ 40A IC, COLLECTOR CURRENT Figure 13. Typical switching energy losses as a function of collector current (inductive load, TJ=150°C, VCE=400V, VGE=0/15V 0/15V, RG=16) 2,0mJ Eon* 0,5 mJ 0,0mJ 0A *) Eon include losses due to diode recovery Eoff D=0.5 -1 0.2 10 K/W 0.1 0.05 -2 10 K/W 0.02 0.01 R,(1/W) 0.1882 0.3214 0.1512 0.0392 R1 -3 , (s) 0.1137 2.24*10-2 7.86*10-4 9.41*10-5 R2 10 K/W single pulse C 1 = 1 / R 1 C 2 = 2 /R 2 -4 50°C 100°C 150°C TJ, JUNCTION TEMPERATURE Figure 15. Typical switching energy losses as a function of junction temperature (inductive load, VCE=400V, VGE=0/15V 0/15V, IC=20A, RG=11) Power Semiconductors 10 K/W 1µs 10µs 100µs 1ms 10ms100ms 1s tP, PULSE WIDTH Figure 16. IGBT transient thermal resistance (D = tp / T) 8 Sep-01 Preliminary Datasheet SGP20N60HS SGP20N60HS SGW20N60HS SGW20N60HS 1nF 1000pF Ciss 15V 120V 10V 480V c, CAPACITANCE VGE, GATE-EMITTER VOLTAGE 20V Coss 100pF Crss 5V 0V 0nC 50nC 10pF 0V 10V 20V 30V VCE, COLLECTOR-EMITTER VOLTAGE Figure 18. Typical capacitance as a function of collector-emitter voltage (VGE=0V, f = 1 MHz) 100nC QGE, GATE CHARGE Figure 17. Typical gate charge (IC=20 A) tSC, SHORT CIRCUIT WITHSTAND TIME IC(sc), short circuit COLLECTOR CURRENT 300A 250A 200A 150A 100A 50A 0A 10V 12V 14V 16V 18V VGE, GATE-EMITETR VOLTAGE Figure 20. Typical short circuit collector current as a function of gateemitter voltage (VCE 600V, Tj 150°C) VGE, GATE-EMITETR VOLTAGE Figure 19. Short circuit withstand time as a function of gate-emitter voltage (VCE=600V, start at TJ=25°C) Power Semiconductors 9 20V Sep-01 SGP20N60HS SGP20N60HS Preliminary Datasheet SGW20N60HS SGW20N60HS TO-220AB dimensions [mm] symbol [inch] min max min max A 9.70 10.30 0.3819 0.4055 B 14.88 15.95 0.5858 0.6280 C 0.65 0.86 0.0256 0.0339 D 3.55 3.89 0.1398 0.1531 E 2.60 3.00 0.1024 0.1181 F 6.00 6.80 0.2362 0.2677 G 13.00 14.00 0.5118 0.5512 H 4.35 4.75 0.1713 0.1870 K 0.38 0.65 0.0150 0.0256 L 0.95 1.32 0.0374 0.0520 M 2.54 typ. 0.1 typ. N 4.30 4.50 0.1693 0.1772 P 1.17 1.40 0.0461 0.0551 T 2.30 2.72 0.0906 0.1071 dimensions TO-247AC [mm] symbol [inch] min max min max A 4.78 5.28 0.1882 0.2079 B 2.29 2.51 0.0902 0.0988 C 1.78 2.29 0.0701 0.0902 D 1.09 1.32 0.0429 0.0520 E 1.73 2.06 0.0681 0.0811 F 2.67 3.18 0.1051 0.1252 G 0.76 max 0.0299 max H 20.80 21.16 0.8189 0.8331 K 15.65 16.15 0.6161 0.6358 L 5.21 5.72 0.2051 0.2252 M 19.81 20.68 0.7799 0.8142 N 3.560 4.930 0.1402 0.1941 P Q Power Semiconductors 10 3.61 6.12 0.1421 6.22 0.2409 0.2449 Sep-01 SGP20N60HS SGP20N60HS Preliminary Datasheet SGW20N60HS SGW20N60HS i,v tr r =tS +tF diF /dt Qr r =QS +QF tr r IF tS QS Ir r m tF QF 10% Ir r m dir r /dt 90% Ir r m t VR Figure C. Definition of diodes switching characteristics 1 2 r1 r2 n rn Tj (t) p(t) r1 r2 rn Figure A. Definition of switching times TC Figure D. Thermal equivalent circuit Figure B. Definition of switching losses Power Semiconductors 11 Sep-01 Preliminary Datasheet SGP20N60HS SGP20N60HS SGW20N60HS SGW20N60HS Published by Infineon Technologies AG, Bereich Kommunikation St.-Martin-Strasse 53, D-81541 D-81541 München © Infineon Technologies AG 2001 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Power Semiconductors 12 Sep-01