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Part : SGSP367 Supplier : STMicroelectronics Manufacturer : ComSIT Stock : 800 Best Price : - Price Each : -
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SGSP363 Datasheet

Part Manufacturer Description PDF Type
SGSP363 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
SGSP363 STMicroelectronics Shortform Data Book 1988 Scan

SGSP363

Catalog Datasheet MFG & Type PDF Document Tags

SGSP363

Abstract: sgsp367 ^ li1 siô® isï® iiL i© n s® i«iB ei r s 7 SGS-THOMSON SGSP363 SGSP367 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE SGSP363 SGSP367 v oss 250 V 200 V ^D S (on) ·d 0.45 0 0.33 Q , Û SGSP363 250 250 ±20 10 6.3 40 100 0.8 SGSP367 200 200 12 7.5 48 V V V A A A W W /°C °C °C , p e ra tin g a re a In tro d u ced in 1 9 8 9 w e e k 1 June 1988 1/6 517 SGSP363 - , voltage lD = 250 jtA for SGSP363 for SGSP367 VDS= Max Rating VqS = Max Rating VGS= ± 2 0 V VGS= 0
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OCR Scan

p367

Abstract: sgsp467 s G S-THOMSON 07E D ` . I 73C 17387 SGSP363/P367 ; SGSP463/P467 ' SGSP563/P567 7^ 2 ^ 3 7 O D , enhancement mode Power-Mos field effect transistors. 200V 250V SGSP363 SGSP463 SGSP563 250V 250V 0 .3 3 , Drain-source breakdown voltage Id - 250 nA Vqs 0 for SGSP363/463/563 fo r SGSP367/467/567 Vds = Max, Rating , voltage V qs - V Gs I d - 250 (iA 2 4 V V ds (on) V GS = 10V l D = 5A for SGSP363/463/563 for SGSP367/467/567 V GS = 10V l D = 10A for SGSP363/463/563 .for SGSP367/467/567 T ç a s e = 1 0 0 °C ID = 5
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OCR Scan
p367 sgsp467 P467 sgsp567 ic isd 1932 P3B7 SGSP363/P367 SGSP467 SGSP567 SGSP383/P367 1739T SGSP483/P467

SGSP363

Abstract: SGSP367 S J MTM 7 SCS-THOMSON sUieraò)M (gi SGSP363 SGSP367 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE SGSP363 SGSP367 VDSS 250 V 200 V ^DS(on) 0.45 0 0.33 Q 10 A 12 A · , SGSP363 250 250 ±20 10 6.3 40 100 0.8 - 6 5 to 150 150 SGSP367 200 200 12 7.5 48 V V V A A A W W /°C °C , Introd uced in 1 9 8 9 w e e k 1 Ju n e 1 9 8 8 1/6 517 SGSP363 - SGSP367 THERMAL DATA Rthj , SGSP363 for SGSP367 VGS - 0 250 200 250 1000 ±100 V V ¡i A m lDs s Zero gate voltage drain
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OCR Scan
Abstract: SGSP363 * J M * M(^(Q)i[Li©irö«n(gS_ SGSP367 S " T H 0 M S 0 N N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE SGSP363 SGSP367 V qss 250 V 200 V , drives. INTERNAL SCHEMATIC DIAGRAM GO- SGSP363 SGSP367 C O I Q I > ABSOLUTE MAXIMUM , Introduced in 1989 week 1 June 1988 1/6 517 SGSP363 - SGSP367 3ÃE D 7121237 D0 3G0 G0 , SGSP363 for SGSP367 V qq - 0 Zero gate voltage drain current (VGS = 0) VDS= Max Rating VDS -
OCR Scan
DD30DQ3 OS-10V SGSP36 003000L

IRF732P

Abstract: IRF722P SGSP367 SGSP367 SGSP367 SGSP367 IRF841 IRF840 SGSP322 SGSP321 IRF532 IRF532 SGSP367 SGSP367 SGSP363 IRF741 , SGSP341 SGSP342 SGSP351 SGSP357 SGSP358 SGSP361 SGSP362 SGSP363 SGSP364 SGSP367 SGSP368 SGSP369 SGSP381 , SGSP358 SGSP358 SGSP361 SGSP362 SGSP363 SGSP364 SGSP367 IRF830 SGSP369 SGSP381 SGSP382 SGSP461 SGSP462
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OCR Scan
2SK295 IRF540FI BUZ71 SGSP3055 IRF732P IRF722P 1rfp450 MTP20N10 irf522p 2SK296 2SK308 2SK310 2SK311 2SK312

TP8N10

Abstract: th15n20 SGSP367 IRF841 IRF840 SGSP322 SGSP321 IRF532 IRF532 SG SP367 SGSP367 SGSP363 IRF741 IRF740 SGSP322 331 , SGSP363 SGSP364 SGSP367 SGSP368 SGSP369 SGSP381 SGSP382 SGSP461 SGSP462 SGSP471 SGSP472 SGSP473 SGSP474 , SGSP341 SGSP341 SGSP351 SGSP358 SGSP358 SGSP361 SGSP362 SGSP363 SGSP364 SGSP367 IRF830 SGSP369 SGSP381
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OCR Scan
TP3055A TP8N10 th15n20 TH7N50 TP4N10 TP10N05 IRFP350FI 2SK313 2SK319 2SK320 2SK324 2SK345 2SK346

8n20

Abstract: SGSP363 measurement test circuits see SGSP363 Datasheet. SWITCHING TIMES RESISTIVE LOAD Test circu it Waveforms
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OCR Scan
SEFM8N18 8n20 SEFM8N20 SEFMN820 SEFP8N18 SEFP8N20 C-314

IRF740 smd

Abstract: tsd4m350v 220 SGSP363 10 100 3 1200 350 2.5 1.8 TO 220 IRF723 2.8 50 1 800 350 2.5 1.8 ISOWATT 220 IRF723FI 2
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OCR Scan
IRF523 IRF523FI IRF521 IRF521FI IRF533 IRF531 IRF740 smd tsd4m350v TSD4M250V IRF540 irf740 mosfet tsd4m250 IRF533FI

IRF740 smd

Abstract: IRF6205 500 28 12000 250 1.2 2.5 TO 220 SGSP316 5 75 1.5 500 250 0.45 5 TO 220 SGSP363 10 100 3 1200 350
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OCR Scan
IRFP150 IRFP150FI IRF623 IRF623FI IRF621 IRF621FI IRF6205 IRF722FI smd 102 SGS BUZ32 SGSP475 ISOWATT220 SGS100MA010D1 TSD4M150V SGS150MA010D1

TSD4M450V

Abstract: TSD4M250V 500 28 12000 250 1.2 2.5 TO 220 SGSP316 5 75 1.5 500 250 0.45 5 TO 220 SGSP363 10 100 3 1200 350
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OCR Scan
IRF622 IRF622FI SGSP575 TSD4M450V Isotop IRF620 IRF620FI SGSP317 BUZ32

IRFP 740

Abstract: IRF 810 SGSP363 10 100 3 1200 350 2.5 1.8 TO 220 IRF723 2.8 50 1 800 350 2.5 1.8 ISOWATT 220 IRF723FI 2 30 1 600
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OCR Scan
TSD4M351V IRFP 740 IRF 810 220 to 110 power IRF 426 transistor BU 109 IRF743FI IRF741FI BUZ76A IRF722 BUZ76

pnp transistor 1000v

Abstract: mos Turn-off Thyristor conduction n - J - I- a , !c(h) J / " O S " " I blh) t I Photo 2 - V(B Ft) DSS - 250V SGSP363
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OCR Scan
pnp transistor 1000v mos Turn-off Thyristor 1000V 2A BJT applications of mos controlled thyristor

sgs*P381

Abstract: MTP3055AFI SGSP317 SGSP319 SGSP321 SGSP322 SGSP330 SGSP341 SGSP351 SGSP358 SGSP361 SGSP362 SGSP363 SGSP364 SGSP367
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OCR Scan
SGSP579 SGSP591 STLT20 sgs*P381 MTP3055AFI ISOWATT218 IGBT IRFP453FI BUZ10 BUZ10A BUZ11 BUZ11A BUZ11FI BUZ11S2

ISS 355

Abstract: sgs*P381 BUZ21 IRF542 IRF540 IRF623 IRF621 IRF622 IRF620 SGSP317 BUZ32 SGSP367 SGSP316 SGSP363 IRF723 IRF721
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OCR Scan
SGSP239 ISS 355 IRFp150 To3 package SGSP222 SGSP201 SGSP230 MTP15N05L STLT19

ISOWATT-220

Abstract: BU210A IRF620 IRF620FI SGSP317 BUZ32 SGSP367 SGSP477 SGSP577 SGSP316 SGSP363 IRF723 IRF723FI IRF721 IRF721FI
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OCR Scan
BU210A ISOWATT-220 mtp15n05 ISOWATT218 MTP15N05LFI STLT19FI BUZ71A IRFZ22

ISOWATT220

Abstract: SGSP367 SGSP477 SGSP577 SGSP316 SGSP363 IRF723 IRF723FI IRF721 IRF721FI IRF733 IRF733FI IRF731 IRF731FI
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OCR Scan
IRF832FI BUZ41A IRF830FI IRF842 IRF842FI IRF840FI

sgs*P381

Abstract: BR 1300 BUZ21 IRF542 IRF540 IRF623 IRF621 IRF622 IRF620 SGSP317 BUZ32 SGSP367 SGSP316 SGSP363 IRF723 IRF721
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OCR Scan
BR 1300 bu245a IRFZ20 STLT29 IRFZ42 IRFZ40 STVHD90 MTP15N06L

MTP3055AFI

Abstract: IRF722FI SGSP358 SGSP361 SGSP362 SGSP363 SGSP364 SGSP367 SGSP369 0.50 0.50 0.10 0.10 0.12 0.12 0.028 0.035 1.20
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OCR Scan
SGS35MA050D1 STLT20FI STLT30 ISOWATT22 STHI07N50 STHI07N50FI STHI10N50

mos Turn-off Thyristor

Abstract: SiC BJT 220 SGSP363 10 100 3 1200 350 2.5 1.8 TO 220 IRF723 2.8 50 1 800 350 2.5 1.8 ISOWATT 220 IRF723FI 2
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OCR Scan
SiC BJT BJT Gate Drive circuit fast thyristor 1000V MOS Controlled Thyristor